铟锡氧化物陶瓷靶的制备

研究了铟锡氧化物(ITO)粉末退火后的组织和结构,比较了不同状态的粉末和制备工艺对ITO靶材的影响.结果表明,纳米ITO粉末在800℃以下具有体心立方In2O3结构,1100℃退火后由In2O3和SnO2两相组成;ITO粉末经过喷雾造粒后,形成了实心球形颗粒并具有合理的颗粒级配,通过气氛烧结可以制备出高密度优良的ITO...     

铝栅极降低氧化铟锡薄膜表面电阻

大面积钙钛矿电池组件效率一直比小面积电池最高效率低10%左右,其中透明导电氧化物(TCO)电极的横向电阻是构成串联电阻增加的主要因素。本文采用湿法刻蚀的方法在超白玻璃上制备了深达1-2 μm的凹槽,横向宽度最小为10 μm,随后蒸镀金属铝,射频溅射沉积氧化铟锡(ITO)薄膜,通过调控刻蚀各参数,得到良好的铝栅极形状。对比分析有无铝栅极的ITO薄膜,结果表明,有铝栅极的ITO薄膜相较无铝栅极的ITO薄膜,平均透过率下降约3.5%,横向电阻从17.4Ω降至2.4Ω,得到明显改善。并可通过调控刻蚀厚度,可使横向电阻进一步降低,从而显著提升ITO薄膜在太阳能电池领域里作为透明导电电极时横向电子收集能力,对以玻璃为基底的薄膜太阳能电池大面积产业化应用提供了可能。     

Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

Indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates at low temperature by DC magnetron sputtering from an In-Sn (90-10 wt pct) alloy target were studied. The correla-tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes (FOLEDs). The fabricated FOLEDs with a structure of PET/ITO/NPB (50 nm)/Alq (20 nm)/Mg:Ag (100 nm) showed a maximum luminance of 2125 cd/m2 at 13 V.     

氧化铟锡／二氧化硅纳米复合纤维膜制备及电化学性能研究

用溶胶-凝胶法制得了In2O3和SnO2溶胶喷洒在电纺的PVP＋正硅酸乙酯纤维薄膜上,在5℃／min升温至550℃,保温3h,随炉冷却至室温,得到分布均匀氧化铟锡／二氧化硅纳米复合纤维膜。大量的试验证明得出：1mL的乙醇中加入0．35mL的正硅酸乙酯的纺丝液的可纺性能最好;用1ml乙醇溶解40mg、50mg、60mg的In2O3,氧化铟锡溶胶喷洒的次数在2—3次时纤维膜的导电性能最好。     

A Robust and Conductive Black Tin Oxide Nanostructure Makes Efficient Lithium‐Ion Batteries Possible

SnO₂‐based lithium‐ion batteries have low cost and high energy density, but their capacity fades rapidly during lithiation/delithiation due to phase aggregation and cracking. These problems can be mitigated by using highly conducting black SnO_2?x , which homogenizes the redox reactions and stabilizes fine, fracture‐resistant Sn precipitates in the Li₂O matrix. Such fine Sn precipitates and their ample contact with Li₂O proliferate the reversible Sn → Li _x Sn → Sn → SnO₂/SnO_2?x cycle during charging/discharging. SnO_2?x electrode has a reversible capacity of 1340 mAh g^?1 and retains 590 mAh g^?1 after 100 cycles. The addition of highly conductive, well‐dispersed reduced graphene oxide further stabilizes and improves its performance, allowing 950 mAh g^?1 remaining after 100 cycles at 0.2 A g^?1 with 700 mAh g^?1 at 2.0 A g^?1. Conductivity‐directed microstructure development may offer a new approach to form advanced electrodes.     

铟锡氧（ITO）纳米晶的可控合成

本文研究了ITO纳米晶合成中不同羧酸对产物的形貌的影响。采用简便的“一锅法”,在反应体系中采用直链的正辛酸盐或具有支链结构的2一乙基己酸盐,可以分别得到单分散性较好的球状纳米晶（7．6nm±1．9nm）和纳米花（18．3±2．1nm）。我们认为这是由于反应前驱体具有不同的反应活性,并通过红外实验对这一想法进行了验证。我们同时发现不同形貌的ITO纳米晶在近红外区域的局域表面等离子体共振（Localized Surface Plasmon Resonance,LSPR）吸收峰峰形和峰位存在较大的差异。     

Indium Tin Oxide Thin-Film Sensor for Detection of Volatile Organic Compounds (VOCs)

Indium tin oxide (ITO) (In₂O₃ + 17% SnO₂) thin films were grown on glass substrate by direct evaporation method. Two thick gold pads were deposited to take out contacts. The response of these films at different operating temperatures, when exposed to various volatile organic compounds (VOCs) such as methanol, ethanol, butanol, and acetone in the concentration range 200-2500 ppm was evaluated. Additionally, the effect of film thickness on the response charateristics of methanol and acetone was studied. The linearity and sensitivity of the sensors were measured. The ITO thin-film sensors showed a sensitivity of 0.256 ohms/ppm to acetone vapors, which was almost linear in the range 200-2500 ppm. In order to improve sensitivity and selectivity, a thin layer of various metal and metal oxides such as Cu and PbO was deposited on the sensor surface to work as catalytic layer and the effect on the performance of the sensor was studied. The response and recovery times of the sensor were determined for acetone vapors and were found to be 155 sec and 110 sec, respectively.     

退火处理对铟锡氧化物粉末的影响

对两种不同比表面积(BET)的铟锡氧化物(ITO)纳米粉末进行退火处理,研究和比较了温度对两种粉末微观组织和结构的影响,并对这两种粉末烧结的靶材进行了比较。结果表明,在800～1500℃进行不同温度的退火处理后,在1200℃以上,两种比表面积的ITO粉末粒径增长显著,颗粒之间出现了相互合并和结合长大现象,而高BET粉末的粒径增加幅度比低BET粉末的更大;在1525℃烧结后,用高BET粉末烧成的靶材的晶粒和气孔尺寸更大,气孔数量也更多。