Solution‐Processed Organic Light‐Emitting Transistors Incorporating Conjugated Polyelectrolytes

Improved performance of p‐type organic light‐emitting transistors (OLETs) is demonstrated by introducing a conjugated polyelectrolyte (CPE) layer and symmetric high work function (WF) source and drain metal electrodes. The OLET comprises a tri‐layer film consisting of a hole transporting layer, an emissive layer, and a CPE layer as an electron injection layer. The thickness of the CPE layer is critical for achieving good performance and provides an important structural handle for consideration in future optimization studies. We also demonstrate for the first time, good performance solution‐processed blue‐emitting OLETs. These results further demonstrate the simplification of device fabrication and improved performance afforded by integrating CPE interlayers into organic optoelectronic devices.     

Light emitting field-effect transistors with vertical heterojunctions based on pentacene and tris-(8-hydroxyquinolinato) aluminum

We report a top-contact light emitting field-effect transistor based on an asymmetric vertical heterojunction using pentacene as a field-effect layer and tris-(8-hydroxyquinolinato) aluminum (Alq₃) as an electron transport and luminescent material, which is fabricated on an indium tin oxide (ITO)-coated glass substrate with poly (methyl methacrylate) (PMMA) as a gate dielectric. The Alq₃ layer underneath the drain electrode roughly occupies one half of the pentacene surface forming an asymmetric heterojunction with pentacene. A hole transport layer N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) is introduced to occupy the other half of the pentacene surface underneath the source electrode to allow vertical hole transport in the device. We have realized the electrical switching functionality of a field-effect transistor (FET) and the control of electroluminescence (EL) simultaneously under ambient atmosphere. The device exhibits typical p-channel characteristics and green emission from Alq₃ is observed adjacent to the drain electrode. A working principle of the device is discussed in detail. Furthermore, this device configuration enables high-spatial-resolution fluorescence imaging of device operation, which is a simple and powerful tool for studying organic luminescent materials.     

Solution‐Processed Zinc Oxide as High‐Performance Air‐Stable Electron Injector in Organic Ambipolar Light‐Emitting Field‐Effect Transistors

Electron injection from the source–drain electrodes limits the performance of many n‐type organic field‐effect transistors (OFETs), particularly those based on organic semiconductors with electron affinities less than 3.5 eV. Here, it is shown that modification of gold source–drain electrodes with an overlying solution‐deposited, patterned layer of an n‐type metal oxide such as zinc oxide (ZnO) provides an efficient electron‐injecting contact, which avoids the use of unstable low‐work‐function metals and is compatible with high‐resolution patterning techniques such as photolithography. Ambipolar light‐emitting field‐effect transistors (LEFETs) based on green‐light‐emitting poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole) (F8BT) and blue‐light‐emitting poly(9,9‐dioctylfluorene) (F8) with electron‐injecting gold/ZnO and hole‐injecting gold electrodes show significantly lower electron threshold voltages and several orders of magnitude higher ambipolar currents, and hence light emission intensities, than devices with bare gold electrodes. Moreover, different solution‐deposited metal oxide injection layers are compared. By spin‐coating ZnO from a low‐temperature precursor, processing temperatures could be reduced to 150 °C. Ultraviolet photoemission spectroscopy (UPS) shows that the improvement in transistor performance is due to reduction of the electron injection barrier at the interface between the organic semiconductor and ZnO/Au compared to bare gold electrodes.     

Interface Functionalities in Multilayer Stack Organic Light Emitting Transistors (OLETs)

Herein is described a multidisciplinary approach to understand the performance limitations of small molecule organic light emitting transistors (OLETs) based on a layered architecture, an innovative architecture potentially competitive with the state of the art and more flexible for spectral emission control. The processes of charge injection and field‐effect transport at metal/organic and organic/organic interfaces are analysed using microscopic and spectroscopic techniques in coordination. Atomic force microscopy and ultrasonic force microscopy are employed to characterize the interface morphology and the initial growth stages of organic films where charge transport actually occurs. X‐ray diffraction and near edge X‐ray dichroic absorption with linearly polarised light allow to determine the unit cell packing and the molecular orientation at the active organic interfaces, as well as the amount of non‐ordered domains. Moreover, chemical reactivity at the interfaces is measured by X‐ray photoelectron spectroscopy. It is found that a strong reaction occurs at the metal‐organic interfaces, with molecular fragmentation. Additionally, the transport properties strongly depend on the nature of the materials forming the organic stack. Specifically, amorphous conjugated films as bottom layers can promote an increased molecular disorder in the upper active layer, with a concomitant deterioration of the conduction properties.     

Unlocking the full potential of light emitting field-effect transistors by engineering charge injection layers

Light emitting field-effect transistors (LEFETs) are a class of next generation devices which combine the switching properties of field-effect transistors (FETs) with light emitting capabilities of organic light-emitting diodes (OLEDs) in a single device architecture. Current LEFET architectures suffer from inefficient charge injection of electrons and holes from the source and drain electrodes, leading to unbalanced charge transport and hence poor device performance. Here we report a simple fabrication method for LEFETs that delivers asymmetric source and drain electrodes comprised of low and high work function materials. The interdigitated low and high work function source–drain electrodes consist of combinations of organic materials, salts, metal oxides and metals. Using this method we were able to obtain a maximum EQE of up to 1.2% in a single layer device with Super Yellow as the active material.     

Cover Picture: An Organic Light‐Emitting Diode with Field‐Effect Electron Transport (Adv. Funct. Mater. 1/2008)

The cover shows an organic light‐emitting diode with remote metallic cathode, reported by Sarah Schols and co‐workers on p. 136. The metallic cathode is displaced from the light‐emission zone by one to several micrometers. The injected electrons accumulate at an organic heterojunction and are transported to the light‐emission zone by field‐effect. The achieved charge‐carrier mobility and in combination with reduced optical absorption losses because of the remoteness of the cathode may lead to applications as waveguide OLEDs and possibly a laser structure. (The result was obtained in the EU‐funded project “OLAS” IST‐ FP6‐015034.) We describe an organic light‐emitting diode (OLED) using field‐effect to transport electrons. The device is a hybrid between a diode and a field‐effect transistor. Compared to conventional OLEDs, the metallic cathode is displaced by one to several micrometers from the light‐emitting zone. This micrometer‐sized distance can be bridged by electrons with enhanced field‐effect mobility. The device is fabricated using poly(triarylamine) (PTAA) as the hole‐transport material, tris(8‐hydroxyquinoline) aluminum (Alq₃) doped with 4‐(dicyanomethylene)‐2‐methyl‐6‐(julolindin‐4‐yl‐vinyl)‐4H‐pyran (DCM₂) as the active light‐emitting layer, and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C₁₃H₂₇), as the electron‐transport material. The obtained external quantum efficiencies are as high as for conventional OLEDs comprising the same materials. The quantum efficiencies of the new devices are remarkably independent of the current, up to current densities of more than 10 A cm^–2. In addition, the absence of a metallic cathode covering the light‐emission zone permits top‐emission and could reduce optical absorption losses in waveguide structures. These properties may be useful in the future for the fabrication of solid‐state high‐brightness organic light sources.     

Enhanced Charge Injection Through Nanostructured Electrodes for Organic Field Effect Transistors

Nanosphere lithography is used to process nanopore‐structured electrodes, which are applied into the fabrication of bottom‐gate, bottom‐contact configuration organic field effect transistors (OFETs) to serve as source/drain elecrodes. The introduction of this nanopore‐structure electrode facilitates the forming of nanopore‐structure pentacene layers with small grain boundaries at the electrode interface, and then reduces the contact resistance, contact‐induces the growth of pentacene and accordingly improves the mobility of charge carriers in the OFETs about 20 times as compared with results in literature through enhancing the charge carrier injection. It is believed that this structure of electrode is a valuable approach for improving organic filed effect transistors.     

Tuning Optoelectronic Properties of Ambipolar Organic Light‐ Emitting Transistors Using a Bulk‐Heterojunction Approach

Bulk‐heterojunction engineering is demonstrated as an approach to producing ambipolar organic light‐emitting field‐effect transistors with tunable electrical and optoelectronic characteristics. The electron and hole mobilities, as well as the electroluminescence intensity, can be tuned over a large range by changing the composition of a bimolecular mixture consisting of α‐quinquethiophene and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic‐diimide. Time‐resolved photoluminescence spectroscopy reveals that the phase segregation of the two molecules in the bulk heterojunction and their electronic interaction determine the optoelectronic properties of the devices. The results presented show that the bulk‐heterojunction approach, which is widely used in organic photovoltaic cells, can be successfully employed to select and tailor the functionality of field‐effect devices, including ambipolar charge transport and light emission.     

High‐Performance,Phosphorescent, Top‐Emitting Organic Light‐Emitting Diodes with p–i–n Homojunctions

High‐performance, green, orange, and red top‐emitting organic light‐emitting diodes (TOLEDs) with p–i–n homojunction are demonstrated. An excellent ambipolar host, 2,5‐bis(2‐(9H‐carbazol‐9‐yl)phenyl)‐1,3,4‐oxadiazole (o‐CzOXD), which has good thermal and morphological stabilities, a high triplet energy level, and equally high electron and hole mobilities, is chosen as the organic host material for the homojunction devices. By electrical doping, the carrier injection and transporting characteristics are greatly improved. The optical structure is optimized in view of light emission of different colors to enhance the color purity and improve the view characte­ristics. As a result, high efficiency p–i–n homojunction TOLEDs with saturated intrinsic emission of the emitting materials and angular independence of the emission are realized. The performances of these p–i–n homojunction TOLEDs are even higher than the multi‐layer heterojunction bottom‐emitting devices using the same emitting layers.     

Organic Light Emitting Field Effect Transistors: Advances and Perspectives

Light emitting field effect transistors based on molecular and polymeric organic semiconductors are multifunctional devices that integrate light emission with the current modulating function of a transistor. The planar geometry of organic light emitting field effect transistors (OLEFETs) offers direct access to the light emission region, providing a unique experimental configuration to investigate fundamental optical and electronic properties in organic semiconductors. OLEFETs show great potential for technological applications such as active matrix full color electroluminescent displays. In this Feature Article we review advances in OLEFETs since their first demonstration in 2003 and we highlight exciting challenges associated with their future development.     

Cover Picture: High Definition Digital Fabrication of Active Organic Devices by Molecular Jet Printing (Adv. Funct. Mater. 15/2007)

A new method for direct patterning of organic optoelectronic/electronic devices using a reconfigurable and scalable printing method is reported by Vladimir Bulovic and co‐workers on p. 2722. The printing technique is applied to the fabrication of high‐resolution printed organic light emitting devices (OLEDs) and organic field effect transistors (OFETs). Remarkably, the final print‐deposited films are evaporated onto the substrate (rather than solvent printed), giving high‐quality, solvent‐free, molecularly flat structures that match the performance of comparable high‐performance unpatterned films. We introduce a high resolution molecular jet (MoJet) printing technique for vacuum deposition of evaporated thin films and apply it to fabrication of 30 μm pixelated (800 ppi) molecular organic light emitting devices (OLEDs) based on aluminum tris(8‐hydroxyquinoline) (Alq₃) and fabrication of narrow channel (15 μm) organic field effect transistors (OFETs) with pentacene channel and silver contacts. Patterned printing of both organic and metal films is demonstrated, with the operating properties of MoJet‐printed OLEDs and OFETs shown to be comparable to the performance of devices fabricated by conventional evaporative deposition through a metal stencil. We show that the MoJet printing technique is reconfigurable for digital fabrication of arbitrary patterns with multiple material sets and high print accuracy (of better than 5 μm), and scalable to fabrication on large area substrates. Analogous to the concept of “drop‐on‐demand” in Inkjet printing technology, MoJet printing is a “flux‐on‐demand” process and we show it capable of fabricating multi‐layer stacked film structures, as needed for engineered organic devices.     

Light Out‐Coupling Efficiencies of Organic Light‐Emitting Diode Structures and the Effect of Photoluminescence Quantum Yield

Results obtained from modeling the light out‐coupling efficiency of an organic light‐emitting diode (OLED) structure containing the recently developed first‐generation fac‐tris(2‐phenylpyridine) iridium‐cored dendrimer (Ir‐G1) as the emissive organic layer are reported. Comparison of the results obtained for this material with those of corresponding structures based upon small‐molecule and polymer emissive materials is made. The calculations of out‐coupling efficiency performed here take account of many factors, including the photoluminescence quantum yield (PLQY) of the emissive materials. Further, how each material system might perform with regard to out‐coupling efficiency when a range of possible PLQYs are considered is shown. The calculations show that the very high efficiency of dendrimer‐based OLEDs can be attributed primarily to their high PLQY.     

Light‐Emitting Field‐Effect Transistors Consisting of Bilayer‐Crystal Organic Semiconductors

A novel device structure for organic light‐emitting field‐effect transistors has been developed. The devices comprise bilayer‐crystal organic semiconductors of a p‐type and an n‐type. The pn‐junction can readily be formed by successively laminating two crystals on top of a gate insulator. This structure enables the efficient injection and transport of electrons and holes, leading to their effective recombination. As a result, bright emissions are attained. The devices are operated by AC gate voltages. Gate‐voltage phase‐resolved drain‐current and emission‐intensity measurements enable us to study the relationship between the emissions and carrier transport. The maximum external quantum efficiency reaches 0.045%.     

Carrier radiation distribution in organic light-emitting diodes

This paper is based on the analysis of white organic electroluminescent device electroluminescent spectrum to explain the regular pattern of carrier radiation distribution.It has proved electron that is injected from cathode is satisfied with the regularity of radiation distribution on the organic emitting layer.This radiation distribution is related to several factors,such as electron injection capabilities,applied electrical field intensity,carrier mobility,etc.The older instruction design is ITO/2-TNATA/NPB/ADN:DCJTB:TBPe/Alq3/cathode.Get to change electron injector capabilities through using different cathode and also find electroluminescent spectrum to produce significant changes.Simultaneously,electron radiation quantity has some limitation,and electroluminescent spectrum reflects that spectral intensity does not change anymore when the ratio of cathode dopant to a saturated state on the organic emitting layer.It also shows the same spectrum variational phenomenon while changing the applied electrical field intensity.To put forward of the carrier radiation distribution is good for organic light emitting diode (OLED) luminescence properties analysis and research.     

Organic Solid Solutions: Formation and Applications in Organic Light‐Emitting Diodes

To enhance the performance of organic devices, doping and graded mixed‐layer structures, formed by co‐evaporation methods, have been extensively adopted in the formation of organic thin films. Among the criteria for selecting materials systems, much attention has been paid to the materials' energy‐band structure and carrier‐transport behavior. As a result, some other important characteristics may have been overlooked, such as material compatibility or solubility. In this paper, we propose a new doping method utilizing fused organic solid solutions (FOSSs) which are prepared via high‐pressure and high‐temperature processing. By preparing fused solid solutions of organic compounds, the stable materials systems can be selected for device fabrication. Furthermore, by using these FOSSs, doping concentration and uniformity can be precisely controlled using only one thermal source. As an example of application in organic thin films, high‐performance organic light‐emitting diodes with both single‐color and white‐light emission have been prepared using this new method. Compared to the traditional co‐evaporation method, a FOSS provides us with a more convenient way to optimize the doping system and fabricate relatively complicated organic devices.     

High Definition Digital Fabrication of Active Organic Devices by Molecular Jet Printing

We introduce a high resolution molecular jet (MoJet) printing technique for vacuum deposition of evaporated thin films and apply it to fabrication of 30 μm pixelated (800 ppi) molecular organic light emitting devices (OLEDs) based on aluminum tris(8‐hydroxyquinoline) (Alq₃) and fabrication of narrow channel (15 μm) organic field effect transistors (OFETs) with pentacene channel and silver contacts. Patterned printing of both organic and metal films is demonstrated, with the operating properties of MoJet‐printed OLEDs and OFETs shown to be comparable to the performance of devices fabricated by conventional evaporative deposition through a metal stencil. We show that the MoJet printing technique is reconfigurable for digital fabrication of arbitrary patterns with multiple material sets and high print accuracy (of better than 5 μm), and scalable to fabrication on large area substrates. Analogous to the concept of “drop‐on‐demand” in Inkjet printing technology, MoJet printing is a “flux‐on‐demand” process and we show it capable of fabricating multi‐layer stacked film structures, as needed for engineered organic devices.     

Highly Efficient Non‐Doped Blue Organic Light‐Emitting Diodes Based on Fluorene Derivatives with High Thermal Stability

A new series of blue‐light‐emitting fluorene derivatives have been synthesized and characterized. The fluorene derivatives have high fluorescence yields, good thermal stability, and high glass‐transition temperatures in the range 145–193 °C. Organic light‐emitting diodes (OLEDs) fabricated using the fluorene derivatives as the host emitter show high efficiency (up to 5.3 cd A^–1 and 3.0 lm W^–1) and bright blue‐light emission (Commission Internationale de L'Eclairage (CIE) coordinates of x = 0.16, y = 0.22). The performance of the non‐doped fluorene‐based devices is among the best fluorescent blue‐light‐emitting OLEDs. The good performance of the present blue OLEDs is considered to derive from: 1) appropriate energy levels of the fluorene derivatives for good carrier injection; 2) good carrier‐transporting properties; and 3) high fluorescence efficiency of the fluorene derivatives. These merits are discussed in terms of the molecular structures.     

Highly Efficient Non‐Doped Blue‐Light‐Emitting Diodes Based on an Anthrancene Derivative End‐Capped with Tetraphenylethylene Groups

A novel blue‐emitting material, 2‐tert‐butyl‐9,10‐bis[4‐(1,2,2‐triphenylvinyl)phenyl]anthracene ( TPVAn ), which contains an anthracene core and two tetraphenylethylene end‐capped groups, has been synthesized and characterized. Owing to the presence of its sterically congested terminal groups, TPVAn possesses a high glass transition temperature (155 °C) and is morphologically stable. Organic light‐emitting diodes (OLEDs) utilizing TPVAn as the emitter exhibit bright saturated‐blue emissions (Commission Internationale de L'Eclairage (CIE) chromaticity coordinates of x = 0.14 and y = 0.12) with efficiencies as high as 5.3 % (5.3 cd A^–1)—the best performance of non‐doped deep blue‐emitting OLEDs reported to date. In addition, TPVAn doped with an orange fluorophore served as an authentic host for the construction of a white‐light‐emitting device that displayed promising electroluminescent characteristics: the maximum external quantum efficiency reached 4.9 % (13.1 cd A^–1) with CIE coordinates located at (0.33, 0.39).     

Small Molecules in Light‐Emitting Electrochemical Cells: Promising Light‐Emitting Materials

Light‐emitting electrochemical cells (LECs) are solid‐state lighting devices that convert electric current to light within electroluminescent organic semiconductors, and these devices have recently attracted significant attention. Introduced in 1995, LECs are considered a great breakthrough in the field of light‐emitting devices for their applications in scalable and adaptable fabrication processes aimed at producing cost‐efficient devices. Since then, LECs have evolved through the discovery of new suitable emitters, understanding the working mechanism of devices, and the development of various fabrication methods. LECs are best known for their simple architecture and easy, low‐cost fabrication techniques. The key feature of their fabrication is the use of air stable electrodes and a single active layer consisting of mobile ions that enable efficient charge injection and transport processes within LEC devices. More importantly, LEC devices can be operated at low voltages with high efficiencies, contributing to their widespread interest. This review provides a general overview of the development of LECs and discusses how small molecules can be utilized in LEC applications by overcoming the use of traditional lighting materials like polymers and ionic transition metal complexes. The achievements of each study concerning small molecule LECs are discussed.     

Solution‐Processed Full‐Color Polymer Organic Light‐Emitting Diode Displays Fabricated by Direct Photolithography

The first full‐color polymer organic light‐emitting diode (OLED) display is reported, fabricated by a direct photolithography process, that is, a process that allows direct structuring of the electroluminescent layer of the OLED by exposure to UV light. The required photosensitivity is introduced by attaching oxetane side groups to the backbone of red‐, green‐, and blue‐light‐emitting polymers. This allows for the use of photolithography to selectively crosslink thin films of these polymers. Hence the solution‐based process requires neither an additional etching step, as is the case for conventional photoresist lithography, nor does it rely on the use of prestructured substrates, which are required if ink‐jet printing is used to pixilate the emissive layer. The process allows for low‐cost display fabrication without sacrificing resolution: Structures with features in the range of 2 μm are obtained by patterning the emitting polymers via UV illumination through an ultrafine shadow mask. Compared to state‐of‐the‐art fluorescent OLEDs, the display prototype (pixel size 200 μm × 600 μm) presented here shows very good efficiency as well as good color saturation for all three colors. The application in solid‐state lighting is also possible: Pure white light [Commision Internationale de l'Éclairage (CIE) values of 0.33, 0.33 and color rendering index (CRI) of 76] is obtained at an efficiency of 5 cd A^–1 by mixing the three colors in the appropriate ratio. For further enhancement of the device efficiency, an additional hole‐transport layer (HTL), which is also photo‐crosslinkable and therefore suitable to fabricate multilayer devices from solution, is embedded between the anode and the electroluminescent layer.