A Low Power Analog CMOS Vision Chip for Edge Detection Using Electronic Switches

An analog CMOS vision chip for edge detection with power consumption below 20 mW was designed by adopting electronic switches. An electronic switch separates the edge detection circuit into two parts: one is a logarithmic compression photocircuit, and the other is a signal processing circuit for edge detection. The electronic switch controls the connection between the two circuits. When the electronic switch is off, it can intercept the current flow through the signal processing circuit and restrict the magnitude of the current flow below several hundred nA. The estimated power consumption of the chip, with 128 × 128 pixels, was below 20 mW. The vision chip was designed using 0.25 µm 1‐poly 5‐metal standard full custom CMOS process technology.     

A 160×120 Light‐Adaptive CMOS Vision Chip for Edge Detection Based on a Retinal Structure Using a Saturating Resistive Network

We designed and fabricated a vision chip for edge detection with a 160×120 pixel array by using 0.35 µm standard complementary metal‐oxide‐semiconductor (CMOS) technology. The designed vision chip is based on a retinal structure with a resistive network to improve the speed of operation. To improve the quality of final edge images, we applied a saturating resistive circuit to the resistive network. The light‐adaptation mechanism of the edge detection circuit was quantitatively analyzed using a simple model of the saturating resistive element. To verify improvement, we compared the simulation results of the proposed circuit to the results of previous circuits.     

High‐Performance Ferroelectric Polymer Side‐Gated CdS Nanowire Ultraviolet Photodetectors

An efficient ferroelectric‐enhanced side‐gated single CdS nanowire (NW) ultraviolet (UV) photodetector at room temperature is demonstrated. With the ultrahigh electrostatic field from polarization of ferroelectric polymer, the depletion of the intrinsic carriers in the CdS NW channel is achieved, which significantly reduces the dark current and increases the sensitivity of the UV photodetector even after the gate voltage is removed. Meanwhile, the low frequency noise current power of the device reaches as low as 4.6 × 10^?28 A² at a source‐drain voltage V_ds = 1 V. The single CdS NW UV photodetector exhibits high photoconductive gain of 8.6 × 10⁵, responsivity of 2.6 × 10⁵ A W^?1, and specific detectivity (D*) of 2.3 × 10¹⁶ Jones at a low power density of 0.01 mW cm^?2 for λ = 375 nm. In addition, the spatially resolved scanning photocurrent mapping across the device shows strong photocurrent signals near the metal contacts. This is promising for the design of a controllable, high‐performance, and low power consumption ultraviolet photodetector.     

3D Microfluidic Surface‐Enhanced Raman Spectroscopy (SERS) Chips Fabricated by All‐Femtosecond‐Laser‐Processing for Real‐Time Sensing of Toxic Substances

A novel all‐femtosecond‐laser‐processing technique is proposed for the fabrication of 2D periodic metal nanostructures inside 3D glass microfluidic channels, which have applications to real‐time surface‐enhanced Raman spectroscopy (SERS). In the present study, 3D glass microfluidic channels are fabricated by femtosecond‐laser‐assisted wet etching. This is followed by the space‐selective formation of Cu‐Ag layered thin films inside the microfluidic structure via femtosecond laser direct writing ablation and electroless metal plating. The Cu‐Ag films are subsequently nanostructured by irradiation with linearly polarized beams to form periodic surface structures. This work demonstrates that a double exposure to laser beams having orthogonal polarization directions can generate arrays of layered Cu‐Ag nanodots with dimensions as small as 25% of the laser wavelength. The resulting SERS microchip is able to detect Rhodamine 6G, exhibiting an enhancement factor of 7.3 × 10⁸ in conjunction with a relative standard deviation of 8.88%. This 3D microfluidic chip is also found to be capable of the real‐time SERS detection of Cd²⁺ ions at concentrations as low as 10 ppb in the presence of crystal violet. This technique shows significant promise for the fabrication of high performance microfluidic SERS platforms for the real‐time sensing of toxic substances with ultrahigh sensitivity.     

Self‐Assembly of Nanoparticle‐Spiked Pillar Arrays for Plasmonic Biosensing

Plasmonic biosensors have demonstrated superior performance in detecting various biomolecules with high sensitivity through simple assays. Scaled‐up, reproducible chip production with a high density of hotspots in a large area has been technically challenging, limiting the commercialization and clinical translation of these biosensors. A new fabrication method for 3D plasmonic nanostructures with a high density, large volume of hotspots and therefore inherently improved detection capabilities is developed. Specifically, Au nanoparticle‐spiked Au nanopillar arrays are prepared by utilizing enhanced surface diffusion of adsorbed Au atoms on a slippery Au nanopillar arrays through a simple vacuum process. This process enables the direct formation of a high density of spherical Au nanoparticles on the 1 nm‐thick dielectric coated Au nanopillar arrays without high‐temperature annealing, which results in multiple plasmonic coupling, and thereby large effective volume of hotspots in 3D spaces. The plasmonic nanostructures show signal enhancements over 8.3 × 10⁸‐fold for surface‐enhanced Raman spectroscopy and over 2.7 × 10²‐fold for plasmon‐enhanced fluorescence. The 3D plasmonic chip is used to detect avian influenza‐associated antibodies at 100 times higher sensitivity compared with unstructured Au substrates for plasmon‐enhanced fluorescence detection. Such a simple and scalable fabrication of highly sensitive 3D plasmonic nanostructures provides new opportunities to broaden plasmon‐enhanced sensing applications.     

High‐Performance On‐Chip Thermionic Electron Micro‐Emitter Arrays Based on Super‐Aligned Carbon Nanotube Films

An important advancement towards the realization of miniaturized and fully integrated vacuum electronic devices will be the development of on‐chip integrated electron sources with stable and reproducible performances. Here, the fabrication of high‐performance on‐chip thermionic electron micro‐emitter arrays is demonstrated by exploiting suspended super‐aligned carbon nanotube films as thermionic filaments. For single micro‐emitter, an electron emission current up to ≈20 µA and density as high as ≈1.33 A cm^?2 are obtained at a low‐driven voltage of 3.9 V. The turn‐on/off time of a single micro‐emitter is measured to be less than 1 µs. Particularly, stable (±1.2% emission current fluctuation for 30 min) and reproducible (±0.2% driven voltage variation over 27 cycles) electron emission have been experimentally observed under a low vacuum of ≈5 × 10^?4 Pa. Even under a rough vacuum of ≈10^?1 Pa, an impressive reproducibility (±2% driven voltage variation over 20 cycles) is obtained. Moreover, emission performances of micro‐emitter arrays are found to exhibit good uniformity. The outstanding stability, reproducibility, and uniformity of the thermionic electron micro‐emitter arrays imply their promising applications as on‐chip integrated electron sources.     

Extreme Two‐Phase Cooling from Laser‐Etched Diamond and Conformal,Template‐Fabricated Microporous Copper

This paper reports the first integration of laser‐etched polycrystalline diamond microchannels with template‐fabricated microporous copper for extreme convective boiling in a composite heat sink for power electronics and energy conversion. Diamond offers the highest thermal conductivity near room temperature, and enables aggressive heat spreading along triangular channel walls with 1:1 aspect ratio. Conformally coated porous copper with thickness 25 µm and 5 µm pore size optimizes fluid and heat transport for convective boiling within the diamond channels. Data reported here include 1280 W cm^?2 of heat removal from 0.7 cm² surface area with temperature rise beyond fluid saturation less than 21 K, corresponding to 6.3 × 10⁵ W m^?2 K^?1. This heat sink has the potential to dissipate much larger localized heat loads with small temperature nonuniformity (5 kW cm^?2 over 200 µm × 200 µm with <3 K temperature difference). A microfluidic manifold assures uniform distribution of liquid over the heat sink surface with negligible pumping power requirements (e.g., <1.4 × 10^?4 of the thermal power dissipated). This breakthrough integration of functional materials and the resulting experimental data set a very high bar for microfluidic heat removal.     

Polymer 1×2 Thermo‐Optic Digital Optical Switch Based on the Total‐Internal‐Reflection Effect

This letter presents a polymer 1×2 thermo‐optic total‐internal‐reflection digital optical switch (TIR‐DOS) with an index contrast of 1.5%‐Δ operating at low power consumption. The structure of our 1×2 TIR‐DOS was created by adding a reflection port to that of a conventional multimode filtering variable optical attenuator. To improve the total‐internal‐reflection efficiency, a heater offset was applied to the crossing region of multimode waveguides of the TIR‐DOS. The fabricated 1×2 TIR‐DOS shows a low electrical power consumption of 18 mW for an on‐off ratio of 35 dB.     

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials have been extensively studied for use in low‐cost and high‐performance thin‐film transistors (TFTs). Here, scandium oxide (ScO_x) is fabricated as a TFT dielectric with excellent electrical properties using a novel water‐inducement method. The thin films are annealed at various temperatures and characterized by using X‐ray diffraction, atomic‐force microscopy, X‐ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScO_x thin film exhibits a low‐leakage current density of 0.2 nA cm^?2 at 2 MV cm^?1, a large areal capacitance of 460 nF cm^?2 at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScO_x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n‐type InZnO (IZO) and p‐type CuO TFTs for testing. The water‐induced full oxide IZO/ScO_x TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm² V^?1 s^?1, a large current ratio (I_on/I_off) of 2.7 × 10⁷ and high stability. Moreover, as far as we know it is the first time that solution‐processed p‐type oxide TFTs based on a high‐k dielectric are achieved. The as‐fabricated p‐type CuO/ScO_x TFTs exhibit a large I_on/I_off of around 10⁵ and a hole mobility of 0.8 cm² V^?1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution‐processed p‐type TFTs, which represents a great step towards the achievement of low‐cost, all‐oxide, and low‐power consumption CMOS logics.     

High‐Performance SiC Nanobelt Photodetectors with Long‐Term Stability Against 300 °C up to 180 Days

In the present work, high‐performance photodetectors (PDs) based on a single B‐doped 3C‐SiC nanobelt, which are synthesized via catalyst‐free pyrolysis of polymeric precursors of polysilazane, are reported. The as‐built PDs have a high responsivity and external quantum efficiency of 6.37 × 10⁵ A · W^?1 and 2.0 × 10⁸% under 405 nm light with a power density of 0.14 mW · cm^?2 at 5 V, respectively. The detectivity of the PDs is measured to be of 6.86 × 10¹⁴ Jones. Moreover, the B‐doped 3C‐SiC nanobelt PDs exhibit a long‐term stability against 300 °C up to 180 days, suggesting their promising applications to be served under harsh conditions.     

DC‐sputtered ZnO:Al as transparent conductive oxide for silicon heterojunction solar cells with µc‐Si:H emitter

Silicon heterojunction (SHJ) solar cells are highly interesting, because of their high efficiency and low cost fabrication. So far, the most applied transparent conductive oxide (TCO) is indium tin oxide (ITO). The replacement of ITO with cheaper, more abundant and environmental friendly material with texturing capability is a promising way to reduce the production cost of the future SHJ solar cells. Here, we report on the fabrication of the SHJ solar cells with direct current‐sputtered aluminum‐doped zinc oxide (ZnO:Al) as an alternative TCO. Furthermore, we address several important differences between ITO and the ZnO:Al layers including a high Schottky barrier at the emitter/ZnO:Al interface and a high intrinsic resistivity of the ZnO:Al layers. To overcome the high Schottky barrier, we suggest employing micro‐crystalline silicon (µc‐Si:H) emitter, which also improves temperature threshold and passivation of the solar cell precursor. In addition, we report on the extensive studies of the effect of the ZnO:Al deposition parameters including layer thickness, oxygen flow, power density and temperature on the electrical properties of the fabricated SHJ solar cells. Finally, the results of our study indicate that the ZnO:Al deposition parameters significantly affect the electrical properties of the obtained solar cell. By understanding and fine‐tuning all these parameters, a high conversion efficiency of 19.2% on flat wafer (small area (5 × 5 mm²) and without any front metal grid) is achieved. Copyright © 2014 John Wiley & Sons, Ltd.     

High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they are conveniently producible through the colloidal approach while having the advantages of two‐dimensionality. In order to employ these materials, according transistor behavior should be adjustable and of high performance. It is shown that the transistor performance of colloidal lead sulfide nanosheets is tunable by altering the surface passivation, the contact metal, or by exposing them to air. It is found that adding halide ions to the synthesis leads to an improvement of the conductivity, the field‐effect mobility, and the on/off ratio of these transistors by passivating their surface defects. Superior n‐type behavior with a field‐effect mobility of 248 cm² V^?1 s^?1 and an on/off ratio of 4 × 10⁶ is achieved. The conductivity of these stripes can be changed from n‐type to p‐type by altering the contact metal and by adding oxygen to the working environment. As a possible solution for the post‐Moore era, realizing new high‐quality semiconductors such as colloidal materials is crucial. In this respect, the results can provide new insights which helps to accelerate their optimization for potential applications.     

Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator

Despite their huge application capabilities, millimeter‐ and terahertz‐wave photodetectors still face challenges in the detection scheme. Topological insulators (TIs) are predicted to be promising candidates for long‐wavelength photodetection, due to the presence of Dirac fermions in their topologically protected surface states. However, photodetection based on TIs is usually hindered by the large dark current, originating from the mixing of bulk states with topological surface states (TSSs) in most realistic samples of TIs. Here millimeter and terahertz detectors based on a subwavelength metal–TI–metal (MTM) heterostructure are demonstrated. The achieved photoresponse stems from the asymmetric scattering of TSS, driven by the localized surface plasmon‐induced terahertz field, which ultimately produces direct photocarriers beyond the interband limit. The device enables high responsivity in both the self‐powered and bias modes even at room temperature. The achieved responsivity is over 75 A/W, with response time shorter than 60 ms in the self‐powered mode. Remarkably, the responsivity increases by several orders of magnitude in the biased configuration, with the noise‐equivalent power (NEP) of 3.6 × 10^?13 W Hz^?1/2 and a detectivity of 2.17 × 10¹¹ cm Hz^?1/2 W^?1 at room temperature. The detection performances open a way toward realistic exploitation of TIs for large‐area, real‐time imaging within long‐wavelength optoelectronics.     

A Dual‐Mode 2.4‐GHz CMOS Transceiver for High‐Rate Bluetooth Systems

This paper reports on our development of a dual‐mode transceiver for a CMOS high‐rate Bluetooth system‐on‐chip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front‐end. It is designed for both the normal‐rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high‐rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual‐path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual‐mode system. The transceiver requires none of the external image‐rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order on‐chip filters. The chip is fabricated on a 6.5‐mm² die using a standard 0.25‐μm CMOS technology. Experimental results show an in‐band image‐rejection ratio of 40 dB, an IIP3 of ?5 dBm, and a sensitivity of ?77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive π/4‐diffrential quadrature phase‐shift keying (π/4‐DQPSK) mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5‐V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low‐cost, multi‐mode, high‐speed wireless personal area network.     

A 3.1 to 5 GHz CMOS Transceiver for DS‐UWB Systems

This paper presents a direct‐conversion CMOS transceiver for fully digital DS‐UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase‐locked loop (PLL), and a voltage controlled oscillator (VCO). A single‐ended‐to‐differential converter is implemented in the down‐conversion mixer and a differential‐to‐single‐ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 mm² die using standard 0.18 µm CMOS technology and a 64‐pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low‐power, and high‐speed wireless personal area network.     

Novel Low‐Power High‐dB Range CMOS Pseudo‐Exponential Cells

In this paper, novel CMOS pseudo‐exponential circuits operating in a class‐AB mode are presented. The pseudo‐exponential approximation employed is based on second order equations. Such terms are derived in a straightforward way from the inherent nonlinear currents of class‐AB transconductors. The cells are appropriate to be integrated in portable equipment due to their compactness and very low power consumption. Measurement results from a fabricated prototype in a 0.5 μm technology reveal a range of 45 dB with errors lower than ±0.5 dB, a power consumption of 100 μW, and an area of 0.01 mm².     

Scissor‐Like Chiral Metamolecules for Probing Intracellular Telomerase Activity

A DNA‐driven gold (Au) heterodimer for intracellular telomerase detection is fabricated. The highly biocompatible and intracellularly stable probe shows an active chiroptical property in the visible region, due to the scissor‐like configuration formed by prolate nanoparticles. Importantly, the telomerase activity is specifically quantified using circular dichroism intensity in situ after internalization of the heterodimer into cancer cells. Moreover, the results clearly illustrate that this method has a remarkable linear range from 0.8 × 10^?12 to 32 × 10^?12 IU, and the limit of detection for telomerase activity is 1.7 × 10^?15 IU in a single HeLa cell. This strategy paves the way for chirality‐based ultrasensitive detection of intracellular cancer markers.     

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Electronic skins (e‐skins) have been widely investigated as important platforms for healthcare monitoring, human/machine interfaces, and soft robots. However, mask‐free formation of patterned active materials on elastomer substrates without involving high‐cost and complicate processes is still a grand challenge in developing e‐skins. Here, SiC‐based strain sensor arrays are fabricated on elastomer for e‐skins by a laser direct writing (LDW) technique, which is mask‐free, highly efficient, and scalable. The direct synthesis of active material on elastomer is ascribed to the LDW‐induced conversion of siloxanes to SiC. The SiC‐based devices own a highest sensitivity of ≈2.47 × 10⁵ achieved at a laser power of 0.8 W and a scanning velocity of 1.25 mm s^?1. Moreover, the LDW‐developed device provides a minimum strain detection limit of 0.05%, a small temperature drift, and a high mechanical durability for over 10 000 cycles. When it is mounted onto human skins, the SiC‐based device is able to monitor external stimuli and human health conditions, with the capability of wireless data transmission. Its potential application in e‐skins is further proved by an LDW‐fabricated device having 3 × 3 SiC sensor array for tactile sensing.     

High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet

2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar‐blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS₃ nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific A_g modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few‐layered 2D NiPS₃ nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 10¹² Jones, outperforming some traditional wide‐bandgap UV detectors. The wavelength‐dependent photoresponsivity measurement allows the direct observation of an admirable cut‐off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.     

A Compact C‐Band 50 W AlGaN/GaN High‐Power MMIC Amplifier for Radar Applications

A C‐band 50 W high‐power microwave monolithic integrated circuit amplifier for use in a phased‐array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two‐stage amplifier can achieve a saturated output power of 50 W with higher than 35% power‐added efficiency and 22 dB small‐signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm² chip area, an output power density of 3.2 W/mm² is demonstrated.