Controllable Molecular Doping and Charge Transport in Solution‐Processed Polymer Semiconducting Layers

Here, controlled p‐type doping of poly(2‐methoxy‐5‐(2′‐ethylhexyloxy)‐p‐phenylene vinylene) (MEH‐PPV) deposited from solution using tetrafluoro‐tetracyanoquinodimethane (F4‐TCNQ) as a dopant is presented. By using a co‐solvent, aggregation in solution can be prevented and doped films can be deposited. Upon doping the current–voltage characteristics of MEH‐PPV‐based hole‐only devices are increased by several orders of magnitude and a clear Ohmic behavior is observed at low bias. Taking the density dependence of the hole mobility into account the free hole concentration due to doping can be derived. It is found that a molar doping ratio of 1 F4‐TCNQ dopant per 600 repeat units of MEH‐PPV leads to a free carrier density of 4 × 10²² m^?3. Neglecting the density‐dependent mobility would lead to an overestimation of the free hole density by an order of magnitude. The free hole densities are further confirmed by impedance measurements on Schottky diodes based on F4‐TCNQ doped MEH‐PPV and a silver electrode.     

Bilayer Organic–Inorganic Gate Dielectrics for High‐Performance,Low‐Voltage,Single‐Walled Carbon Nanotube Thin‐Film Transistors,Complementary Logic Gates,and p–n Diodes on Plastic Substrates

High‐capacitance bilayer dielectrics based on atomic‐layer‐deposited HfO₂ and spin‐cast epoxy are used with networks of single‐walled carbon nanotubes (SWNTs) to enable low‐voltage, hysteresis‐free, and high‐performance thin‐film transistors (TFTs) on silicon and flexible plastic substrates. These HfO₂–epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm^–2), and low leakage current (ca. 10^–8 A cm^–2); their low‐temperature (ca. 150 °C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge‐transfer doping of SWNTs is also demonstrated through the fabrication of n‐channel SWNT TFTs, low‐voltage p–n diodes, and complementary logic gates.     

Polymer Light‐Emitting Electrochemical Cells: The Formation and Effects of Doping‐Induced Micro Shorts

A planar surface cell structure has been utilized to investigate a polymer light‐emitting electrochemical cell (LEC), consisting of an active‐material mixture of poly[2‐methoxy‐5‐(2′‐ethylhexyloxy)‐1,4‐phenylenevinylene] (MEH‐PPV) and an ionic liquid, tetra‐n‐butylammonium trifluoromethanesulfonate, contacted by Au electrodes. It is shown that diffuse and needle‐shaped doping fronts originate from the electrodes (p‐type from the positive electrode and n‐type from the negative electrode) during the charging process at a temperature (T) of 393 K. After a turn‐on time, a significant portion of the doping fronts makes contact close to the negative electrode to form a light‐emitting p–i–n junction, but at some points p‐type doping protrudes all the way to the negative electrode to form what are effectively micro shorts. It is shown that the consequences of such doping‐induced micro shorts during a subsequent stabilized “frozen junction” operation at T = 200 K are drastic: the current‐rectification ratio (RR) is low and the quantum efficiency (QE) is far from optimum. Both RR and QE increase significantly during long‐term operation under frozen‐junction conditions, demonstrating that the lifetime of the doping‐induced micro shorts is limited even under such stabilized conditions. Still, it is clear that it is critical for the optimization and further development of LECs to find new types of active material and electrode combinations that allow for formation of a continuous p–i–n junction in the center of the interelectrode gap.     

Effect of Doping Concentration on Microstructure of Conjugated Polymers and Characteristics in N‐Type Polymer Field‐Effect Transistors

Despite extensive progress in organic field‐effect transistors, there are still far fewer reliable, high‐mobility n‐type polymers than p‐type polymers. It is demonstrated that by using dopants at a critical doping molar ratio (MR), performance of n‐type polymer poly[[N,N9‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,59‐(2,29‐bithiophene)] (P(NDI2DO‐T2)) field‐effect transistors (FETs) can be significantly improved and simultaneously optimized in mobility, on–off ratio, crystallinity, injection, and reliability. In particular, when using the organic dopant bis(cyclopentadienyl)–cobalt(II) (cobaltocene, CoCp₂) at a low concentration (0.05 wt%), the FET mobility is increased from 0.34 to 0.72 cm² V^–1 s^–1, and the threshold voltage was decreased from 32.7 to 8.8 V. The relationship between the MR of dopants and electrical characteristics as well as the evolution in polymer crystallinity revealed by synchrotron X‐ray diffractions are systematically investigated. Deviating from previous discoveries, it is found that mobility increases first and then decreases drastically beyond a critical value of MR. Meanwhile, the intensity and width of the main peak of in‐plane X‐ray diffraction start to decrease at the same critical MR. Thus, the mobility decrease is correlated with the disturbed in‐plane crystallinity of the conjugated polymer, for both organic and inorganic dopants. The method provides a simple and efficient approach to employing dopants to optimize the electrical performance and microstructure of P(NDI2DO‐T2).     

Cover Picture: Bilayer Organic–Inorganic Gate Dielectrics for High‐Performance,Low‐Voltage,Single‐Walled Carbon Nanotube Thin‐Film Transistors,Complementary Logic Gates,and p–n Diodes on Plastic Substrates (Adv. Funct. Mater. 18/2006)

Low‐voltage, hysteresis‐free, flexible thin‐film‐type electronic systems based on networks of single‐walled carbon nanotubes and bilayer organic–inorganic nanodielectrics are detailed in work by Rogers and co‐workers reported on p. 2355. The cover image shows a schematic array of such thin‐film transistors (TFTs) on a plastic substrate. The structure of the bilayer nanodielectric, which consists of a film of HfO₂ formed by atomic layer deposition and an ultrathin layer of epoxy formed by spin‐casting, is also illustrated schematically. High‐capacitance bilayer dielectrics based on atomic‐layer‐deposited HfO₂ and spin‐cast epoxy are used with networks of single‐walled carbon nanotubes (SWNTs) to enable low‐voltage, hysteresis‐free, and high‐performance thin‐film transistors (TFTs) on silicon and flexible plastic substrates. These HfO₂–epoxy dielectrics exhibit excellent properties including mechanical flexibility, large capacitance (up to ca. 330 nF cm^–2), and low leakage current (ca. 10^–8 A cm^–2); their low‐temperature (ca. 150 °C) deposition makes them compatible with a range of plastic substrates. Analysis and measurements of these dielectrics as gate insulators in SWNT TFTs illustrate several attractive characteristics for this application. Their compatibility with polymers used for charge‐transfer doping of SWNTs is also demonstrated through the fabrication of n‐channel SWNT TFTs, low‐voltage p–n diodes, and complementary logic gates.     

n‐Type Doping of Organic Thin Films Using Cationic Dyes

We present an approach to stable n‐type doping of organic matrices using organic dopants. In order to circumvent stability limitations inherent to strong organic donors, we produce the donor from a stable precursor compound in situ. As an example, the cationic dye pyronin B chloride is studied as a dopant in a 1,4,5,8‐naphthalene tetracarboxylic dianhydride (NTCDA) matrix. Conductivities of up to 1.9 × 10^–4 S cm^–1 are obtained for doped NTCDA, two orders of magnitude higher than the conductivity of NTCDA doped with bis(ethylenedithio)‐tetrathiafulvalene as investigated previously, and four orders of magnitude higher than nominally undoped NTCDA films. Field‐effect measurements are used to prove n‐type conduction and to study the doping effect further. The findings are interpreted using a model of transport in disordered solids using a recently published model. Combined FTIR, UV‐vis, and mass spectroscopy investigations suggest the formation of leuco pyronin B during sublimation of pyronin B chloride.     

Monodisperse Starburst Oligofluorene‐Functionalized 4,4′,4″‐Tris(carbazol‐9‐yl)‐triphenylamines: Their Synthesis and Deep‐Blue Fluorescent Properties for Organic Light‐Emitting Diode Applications

Four monodisperse starburst oligomers bearing a 4,4′,4″‐tris(carbazol‐9‐yl)‐triphenylamine (TCTA) core and six oligofluorene arms are synthesized and characterized. The lengths of oligofluorene arms vary from one to four fluorene units, giving the starburst oligomers molecular weights ranging from 3072 to 10 068 Da (1 Da = 1.66 × 10^–27 kg). All of the starburst oligomers have good film‐forming capabilities, and display bright, deep‐blue fluorescence (λ_max = 395–416 nm) both in solution and in the solid state, with the quantum efficiencies of the films (Φ_PL) varying between 27 and 88 %. Electrochemical studies demonstrate that these materials have large energy gaps, and are stable for both p‐doping and n‐doping processes. Electroluminescent devices are successfully fabricated using these materials as hole‐transporting emitters, and emit deep‐blue light. Devices with luminance values up to 1025 cd m^–2 at 11 V and luminous efficiencies of 0.47 cd A^–1 at 100 cd m^–2 have been produced, which translates to an external quantum efficiency of 1.4 %. In addition, these large‐energy‐gap starburst oligomers are good host materials for red electrophosphorescence. The luminance of the red electrophosphorescent devices is as high as 4452 cd m^–2, with a luminous efficiency of 4.31 cd A^–1 at 15 mA cm^–2: This value is much higher than those obtained from the commonly used hole‐transporting materials, such as poly(vinyl carbazole) (PVK) (1.10 cd A^–1 at 16 mA cm^–2).     

Large‐Size Bulk and Thin‐Film Stilbazolium‐Salt Single Crystals for Nonlinear Optics and THz Generation

We present new stilbazolium salt DSTMS (4‐N,N‐dimethylamino‐4′‐N′‐methyl‐stilbazolium 2,4,6‐trimethylbenzenesulfonate) with both high second‐order nonlinear optical properties and very favorable crystal growth characteristics. We are able to obtain very large area bulk single crystals of more than 3 × 3 × 0.2 cm³ with a high optical quality without using seed crystals by using low‐temperature solution growth. We also demonstrate the growth of single crystalline thin films of DSTMS with an area of up to 6 × 5 mm² and a thickness between 5–30 μm. Nonlinear optical measurements reveal that DSTMS possesses large nonlinear optical susceptibilities with χ₁₁₁⁽²⁾ = (430 ± 40) pm V^–1 at 1.9 μm. Highly efficient generation of broadband THz waves with THz electric field strengths of more than 4 kV cm^–1 using 160 fs laser pump pulses at a wavelength λ = 1.45 μm and DSTMS crystals has been demonstrated.     

Nitrogen‐Doped Mesoporous Carbon Promoted Chemical Adsorption of Sulfur and Fabrication of High‐Areal‐Capacity Sulfur Cathode with Exceptional Cycling Stability for Lithium‐Sulfur Batteries

As one important component of sulfur cathodes, the carbon host plays a key role in the electrochemical performance of lithium‐sulfur (Li‐S) batteries. In this paper, a mesoporous nitrogen‐doped carbon (MPNC)‐sulfur nanocomposite is reported as a novel cathode for advanced Li‐S batteries. The nitrogen doping in the MPNC material can effectively promote chemical adsorption between sulfur atoms and oxygen functional groups on the carbon, as verified by X‐ray absorption near edge structure spectroscopy, and the mechanism by which nitrogen enables the behavior is further revealed by density functional theory calculations. Based on the advantages of the porous structure and nitrogen doping, the MPNC‐sulfur cathodes show excellent cycling stability (95% retention within 100 cycles) at a high current density of 0.7 mAh cm^‐2 with a high sulfur loading (4.2 mg S cm^‐2) and a sulfur content (70 wt%). A high areal capacity (≈3.3 mAh cm^‐2) is demonstrated by using the novel cathode, which is crucial for the practical application of Li‐S batteries. It is believed that the important role of nitrogen doping promoted chemical adsorption can be extended for development of other high performance carbon‐sulfur composite cathodes for Li‐S batteries.     

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

Heteroepitaxial ZnO films are successfully grown on nondoped GaN‐buffered Al₂O₃ (0001) substrates in water at 90 °C using a two‐step process. In the first step, a discontinuous ZnO thin film (ca. 200 nm in thickness) consisting of hexagonal ZnO crystallites is grown in a solution containing Zn(NO₃)·6 H₂O and NH₄NO₃ at ca. pH 7.5 for 24 h. In the second step, a dense and continuous ZnO film (ca. 2.5 μm) is grown on the first ZnO thin film in a solution containing Zn(NO₃)·6 H₂O and sodium citrate at ca. pH 10.9 for 8 h. Scanning electron microscopy, X‐ray diffraction, UV‐vis absorption spectroscopy, photoluminescence spectroscopy, and Hall‐effect measurement are used to investigate the structural, optical, and electrical properties of the ZnO films. X‐ray diffraction analysis shows that ZnO is a monocrystalline wurtzite structure with an epitaxial orientation relationship of (0001)[11 0]_ZnO∥(0001)[11 0]_GaN. Optical transmission spectroscopy of the two‐step grown ZnO film shows a bandgap energy of 3.26 eV at room temperature. A room‐temperature photoluminescence spectrum of the ZnO film reveals only a main peak at ca. 380 nm without any significant defect‐related deep‐level emissions. The electrical property of ZnO film showed n‐type behavior with a carrier concentration of 3.5 × 10¹⁸ cm^–3 and a mobility of 10.3 cm² V^–1 s^–1.     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.     

Organic N‐Type Molecule: Managing the Electronic States of Bulk Perovskite for High‐Performance Photovoltaics

The power conversion efficiency (PCE) of planar p–i–n perovskite solar cells (pero‐SCs) is commonly lower than that of the n–i–p pero‐SCs, due to the severe nonradiative recombination stemming from the more p‐type perovskite with prevailing electron traps. Here, two n‐type organic molecules, DMBI‐2‐Th and DMBI‐2‐Th‐I, with hydrogen‐transfer properties for the doping of bulk perovskite aimed at regulating its electronic states are synthesized. The generated radicals in these n‐type dopants with high‐lying singly occupied molecular orbitals enable easy transfer of the thermally activated electrons to the MAPbI₃ perovskite for the realization of n‐doped perovskites. The n‐doping degree could be further enhanced by using the iodine ionized dopant DMBI‐2‐Th‐I. The doping effect could reduce the electron trap density, increase the electron concentration of the bulk perovskite, and simultaneously improve the surface electronic contact. When the DMBI‐2‐Th‐I‐doped perovskite is used in planar p–i–n pero‐SCs, the nonradiative recombination is significantly suppressed. As a result, the photovoltaic performance improved significantly, as evidenced by an excellent PCE of 20.90% and a robust ambient stability even under high relative humidity. To the best of the knowledge, this work represents the first example where organic n‐type dopants are used to tune the electronic states of a bulk perovskite film for efficient planar p–i–n pero‐SCs.     

Highly Emissive and Electrochemically Stable Thienylene Vinylene Oligomers and Copolymers: An Unusual Effect of Alkylsulfanyl Substituents

The synthesis, unexpected efficient photoluminescence, and reversible electrochemical p‐ and n‐doping of new conjugated thienylene vinylene materials functionalized with alkylsulfanyl substituents poly(trithienylene vinylene) (PTTV) and poly(dithienylvinyl‐co‐benzothiadiazole) (PDTVB) along with dithienylvinylene‐based oligomers is reported. The materials are studied by thermal and X‐ray diffraction analysis, optical spectroscopy, cyclic voltammetry, and spectroelectrochemistry. Organic field‐effect transistors (OFETs) are fabricated with PTTV and PDTVB. The polymers, prepared by Stille polycondensation, exhibit good thermal stability and a photoluminescent quantum yield in the range 34%–68%. Low bandgaps (1.5–1.8 eV), estimated by optical and electrochemical measurements along with high stability of both redox states, suggest that these structures are promising materials for photovoltaic applications. OFETs fabricated with PDTVB reveal a hole mobility of 7 × 10^?3 cm² V^?1 s^?1 with on/off ratio 10⁵, which are comparatively high values for completely amorphous polymer semiconductors.     

Impact of Morphology on Charge Carrier Transport and Thermoelectric Properties of N‐Type FBDOPV‐Based Polymers

The impact of the chemical structure and molecular order on the charge transport properties of two donor–acceptor copolymers in their neutral and doped states is investigated. Both polymers comprise 3,7‐bis((E)‐7‐fluoro‐1‐(2‐octyl‐dodecyl)‐2‐oxoindolin‐3‐ylidene)‐3,7‐dihydrobenzo[1,2‐b:4,5‐b′]difuran‐2,6‐dione (FBDOPV) as electron‐accepting unit, copolymerized with 9,9‐dioctyl‐fluorene (P(FBDOPV‐F)) or with 3‐dodecyl‐2,2′‐bithiophene (P(FBDOPV‐2T‐C₁₂)). These copolymers possess an amorphous and semi‐crystalline nature, respectively, and exhibit remarkable electron mobilities of 0.065 and 0.25 cm² V^–1 s^–1 in field effect transistors. However, after chemical n‐doping with 4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)phenyl)dimethylamine (N‐DMBI), electrical conductivities four orders of magnitude higher can be achieved for P(FBDOPV‐2T‐C₁₂) (σ = 0.042 S cm^?1). More charge‐transfer complexes are formed between P(FBDOPV‐F) and N‐DMBI, but the highly localized polaronic states poorly contribute to the charge transport. Doped P(FBDOPV‐2T‐C₁₂) exhibits a negative Seebeck coefficient of –265 µV K^?1 and a thermoelectric power factor (PF) of 0.30 µW m^?1 K^?2 at 303 K which increases to 0.72 µW m^?1 K^?2 at 388 K. The in‐plane thermal conductivity (κ_|| = 0.53 W m^?1 K^?1) on the same micrometer‐thick solution‐processed film is measured, resulting in a figure of merit (ZT) of 5.0 × 10^?4 at 388 K. The results provide important design guidelines to improve the doping efficiency and thermoelectric properties of n‐type organic semiconductors.     

Highly Efficient p‐i‐n and Tandem Organic Light‐Emitting Devices Using an Air‐Stable and Low‐Temperature‐Evaporable Metal Azide as an n‐Dopant

Cesium azide (CsN₃) is employed as a novel n‐dopant because of its air stability and low deposition temperature. CsN₃ is easily co‐deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n‐dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p‐i‐n device with the CsN₃‐doped n‐type layer and a MoO₃‐doped p‐type layer is greatly reduced, and this device exhibits a very high power efficiency (57 lm W^?1). Additionally, an n‐doping mechanism study reveals that CsN₃ was decomposed into Cs and N₂ during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance–voltage measurements. A very highly efficient tandem organic light‐emitting diodes (OLED; 84 cd A^?1) is also created using an n–p junction that is composed of the CsN₃‐doped n‐type organic layer/MoO₃ p‐type inorganic layer as the interconnecting unit. This work demonstrates that an air‐stable and low‐temperature‐evaporable inorganic n‐dopant can very effectively enhance the device performance in p‐i‐n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process.     

Liquid‐Crystalline Perylene Diester Polymers with Tunable Charge‐Carrier Mobility

New classes of liquid‐crystalline semiconductor polymers based on perylene diester benzimidazole and perylene diester imide mesogens are reported. Two highly soluble side‐chain polymers, poly(perylene diester benzimidazole acrylate) (PPDB) and poly(perylene diester imide acrylate) (PPDI) are synthesized by nitroxide‐mediated radical polymerization (NMRP). PPDB shows n‐type semiconductor performance with electron mobilities of 3.2 × 10^?4 cm² V^?1 s^?1 obtained in a diode configuration by fitting the space‐charge‐limited currents (SCLC) according to the Mott–Gurney equation. Interestingly, PPDI performs preferentially as a p‐type material with a hole mobility of 1.5 × 10^?4 cm² V^?1 s^?1, which is attributed to the less electron‐deficient perylene core of PPDI compared to PPDB. Optical properties are investigated by UV‐vis and fluorescence spectroscopy. The extended π‐conjugation system due to the benzimidazole unit of PPDB leads to a considerably broader absorption in the visible region compared to PPDI. HOMO and LUMO levels of the polymers are also determined by cyclic voltammetry; the resulting energy band‐gaps are 1.86 eV for PPDB and 2.16 eV for PPDI. Thermal behavior and liquid crystallinity are studied by differential scanning calorimetry, polarized optical microscopy, and X‐ray diffraction measurements. The results indicate liquid‐crystalline order of the polymers over a broad temperature range. These thermal, electrical, and optical properties make the perylene side‐chain polymers attractive materials for organic photovoltaics.     

Bifunctional MOF‐Derived Carbon Photonic Crystal Architectures for Advanced Zn–Air and Li–S Batteries: Highly Exposed Graphitic Nitrogen Matters

Nitrogen‐rich porous carbons (NPCs) are the leading cathode materials for next‐generation Zn–air and Li–S batteries. However, most existing NPC suffers from insufficient exposure and harnessing of nitrogen‐dopants (NDs), constraining the electrochemical performance. Herein, by combining silica templating with in situ texturing of metal–organic frameworks, a new bifunctional 3D nitrogen‐rich carbon photonic crystal architecture of simultaneously record‐high total pore volume (13.42 cm³ g^?1), ultralarge surface area (2546 m² g^?1), and permeable hierarchical macro‐meso‐microporosity is designed, enabling sufficient exposure and accessibility of NDs. Thus, when used as cathode catalysts, the Zn–air battery delivers a fantastic capacity of 770 mAh g_Zn^?1 at an unprecedentedly high rate of 120 mA cm^?2, with an ultrahigh power density of 197 mW cm^?2. When hosting 78 wt% sulfur, the Li–S battery affords a high‐rate capacity of 967 mAh g^?1 at 2 C, with superb stability over 1000 cycles at 0.5 C (0.054% decay rate per cycle), comparable to the best literature value. The results prove the dominant role of highly exposed graphitic‐N in boosting both cathode performances.     

Hierarchical Free‐Standing Carbon‐Nanotube Paper Electrodes with Ultrahigh Sulfur‐Loading for Lithium–Sulfur Batteries

The rational combination of conductive nanocarbon with sulfur leads to the formation of composite cathodes that can take full advantage of each building block; this is an effective way to construct cathode materials for lithium–sulfur (Li–S) batteries with high energy density. Generally, the areal sulfur‐loading amount is less than 2.0 mg cm^?2, resulting in a low areal capacity far below the acceptable value for practical applications. In this contribution, a hierarchical free‐standing carbon nanotube (CNT)‐S paper electrode with an ultrahigh sulfur‐loading of 6.3 mg cm^?2 is fabricated using a facile bottom–up strategy. In the CNT–S paper electrode, short multi‐walled CNTs are employed as the short‐range electrical conductive framework for sulfur accommodation, while the super‐long CNTs serve as both the long‐range conductive network and the intercrossed mechanical scaffold. An initial discharge capacity of 6.2 mA·h cm^?2 (995 mA·h g^?1), a 60% utilization of sulfur, and a slow cyclic fading rate of 0.20%/cycle within the initial 150 cycles at a low current density of 0.05 C are achieved. The areal capacity can be further increased to 15.1 mA·h cm^?2 by stacking three CNT–S paper electrodes—resulting in an areal sulfur‐loading of 17.3 mg cm^?2—for the cathode of a Li–S cell. The as‐obtained free‐standing paper electrode are of low cost and provide high energy density, making them promising for flexible electronic devices based on Li–S batteries.     

Surface‐Shielding Nanostructures Derived from Self‐Assembled Block Copolymers Enable Reliable Plasma Doping for Few‐Layer Transition Metal Dichalcogenides

Precise modulation of electrical and optical properties of 2D transition metal dichalcogenides (TMDs) is required for their application to high‐performance devices. Although conventional plasma‐based doping methods have provided excellent controllability and reproducibility for bulk or relatively thick TMDs, the application of plasma doping for ultrathin few‐layer TMDs has been hindered by serious degradation of their properties. Herein, a reliable and universal doping route is reported for few‐layer TMDs by employing surface‐shielding nanostructures during a plasma‐doping process. It is shown that the surface‐protection oxidized polydimethylsiloxane nanostructures obtained from the sub‐20 nm self‐assembly of Si‐containing block copolymers can preserve the integrity of 2D TMDs and maintain high mobility while affording extensive control over the doping level. For example, the self‐assembled nanostructures form periodically arranged plasma‐blocking and plasma‐accepting nanoscale regions for realizing modulated plasma doping on few‐layer MoS₂, controlling the n‐doping level of few‐layer MoS₂ from 1.9 × 10¹¹ cm^?2 to 8.1 × 10¹¹ cm^?2 via the local generation of extra sulfur vacancies without compromising the carrier mobility.     

Alkoxy‐Functionalized Thienyl‐Vinylene Polymers for Field‐Effect Transistors and All‐Polymer Solar Cells

π‐conjugated polymers based on the electron‐neutral alkoxy‐functionalized thienyl‐vinylene (TVTOEt) building‐block co‐polymerized, with either BDT (benzodithiophene) or T2 (dithiophene) donor blocks, or NDI (naphthalenediimide) as an acceptor block, are synthesized and characterized. The effect of BDT and NDI substituents (alkyl vs alkoxy or linear vs branched) on the polymer performance in organic thin film transistors (OTFTs) and all‐polymer organic photovoltaic (OPV) cells is reported. Co‐monomer selection and backbone functionalization substantially modifies the polymer MO energies, thin film morphology, and charge transport properties, as indicated by electrochemistry, optical spectroscopy, X‐ray diffraction, AFM, DFT calculations, and TFT response. When polymer P7 is used as an OPV acceptor with PTB7 as a donor, the corresponding blend yields TFTs with ambipolar mobilities of μ_e = 5.1 × 10^?3 cm² V^–1 s^–1 and μ_h = 3.9 × 10^?3 cm² V^–1 s^–1 in ambient, among the highest mobilities reported to date for all‐polymer bulk heterojunction TFTs, and all‐polymer solar cells with a power conversion efficiency (PCE) of 1.70%, the highest reported PCE to date for an NDI‐polymer acceptor system. The stable transport characteristics in ambient and promising solar cell performance make NDI‐type materials promising acceptors for all‐polymer solar cell applications.