扫描隧道显微镜中的能谱分析

本文探讨了扫描隧道显微镜中的样品成分分析问题，提出了分析元素的方案，认为二极式结构的俄歇电子出现势谱具有很好的前景，本文对二极式结构的俄歇电子出现势谱的实验作了介绍，并提出了提高其性能的一些方法使它具有应用的可能。     

扫描隧道显微镜的新型实时图像处理系统

本文介绍了一种用于扫描隧道显微镜的实时图像处理系统。通过改变形态学运算，定义条件腐蚀、条件膨胀、开运算、闭运算、可滤除幅度大于特定值的噪声信息。选择适当的模板结构和门限阈值，这种改进的形态滤波器既保留了传统形态滤波器的优点，又克服了它的特点。     

Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy

Scanning tunneling microscope (STM) has presented a revolutionary methodology to nanoscience and nanotechnology. It enables imaging of the topography of surfaces, mapping the distribution of electronic density of states, and manipulating individual atoms and molecules, all at atomic resolutions. In particular, atom manipulation capability has evolved from fabricating individual nanostructures toward the scalable production of the atomic‐sized devices bottom‐up. The combination of precision synthesis and in situ characterization has enabled direct visualization of many quantum phenomena and fast proof‐of‐principle testing of quantum device functions with immediate feedback to guide improved synthesis. Several representative examples are reviewed to demonstrate the recent development of atomic‐scale manipulation, focusing on progress that addresses quantum properties by design in several technologically relevant materials systems. Integration of several atomically precisely controlled probes in a multiprobe STM system vastly extends the capability of in situ characterization to a new dimension where the charge and spin transport behaviors can be examined from mesoscopic to atomic length scale. The automation of atomic‐scale manipulation and the integration with well‐established lithographic processes further push this bottom‐up approach to a new level that combines reproducible fabrication, extraordinary programmability, and the ability to produce large‐scale arrays of quantum structures.     

光记录有机薄膜的扫描隧道显微镜研究

运用扫描隧道显微镜（ＳＴＭ）观察了光记录有机薄膜的微观结构。从微观结构的形貌可以看出光记录后酞菁薄膜上产生了鼓泡。不同能量的激光脉冲产生具有不同细微结构的鼓泡，光盘的性能与鼓泡的尺寸密切相关。研究结果说明ＳＴＭ是研究光盘微观结构的有力工具。     

Spatially Resolved STM Spectroscopy of Charge Injection at the Ladder‐Type Poly(para‐phenylene)/Au(111) Interface

The effect of the morphology on charge‐carrier injection into methyl‐substituted ladder‐type poly(para‐phenylene) (Me‐LPPP) thin films deposited on a Au(111) substrate has been studied by scanning‐tunneling‐microscope‐based spectroscopy. We find that the charge‐carrier injection barrier as well as the single‐particle bandgap, E_gsp, of the polymer show significant variations at different locations of the sample surface. Normally, we find that the values of E_gsp are larger than the optical absorption edge, the energy difference being attributed to the exciton binding energy. In some regions of the sample, however, E_gsp appears to be close to or below the optical absorption edge, pointing to the effect of aggregates within the polymer film which act as hole‐trapping centers with a depth of a few 100 meV. Density functional calculations are used to elucidate the dependence of the electronic states on the polymer packing density. Our results show that in this polymer morphological inhomogeneities strongly influence the charge carrier injection and transport properties. This points to a common behavior of materials exhibiting a tendency to form aggregates. In addition, the exciton binding energy of Me‐LPPP is determined to be approx. 0.85 eV. Moreover, the comparison between the charge‐injection energy gap and the photocurrent action spectrum indicates that the photoionization threshold is not directly related to the exciton binding energy.     

Imaging the Electric‐Field Distribution in Organic Devices by Confocal Electroreflectance Microscopy

Space resolved Stark spectroscopy is introduced as a non invasive optical technique for imaging electric field distribution in organic semiconductors. Stark spectroscopy relies on the electric field induced change in the absorption/reflection. It is shown that local monitoring of Stark shift with confocal spatial resolution provides quantitative information on the strength of the local field as well as charge distribution within the transport channel.     

Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions

Controlling electron tunneling is of fundamental importance in the design and operation of semiconductor nanostructures such as field effect transistors (FETs) and quantum computing device architectures. The exponential sensitivity of tunneling with distance requires precise fabrication techniques to engineer the desired device dimensions to achieve the appropriate tunneling resistances/tunnel rates. This is particularly important for high fidelity spin readout and qubit exchange in quantum computing architectures. Here, it is shown by combining precision fabrication techniques with accurate atomistic modeling, predictive device design criteria are achieved at atomic length scales. Such a tool is useful when devices become more complex or have arbitrary shapes/geometries. In particular, in this study, atomic precision patterning of monolayer degenerately phosphorus-doped silicon tunnel junctions patterned by scanning tunnelling microscopy lithography and tight-binding non-equilibrium Green's function (TB-NEGF) modeling is combined to describe the dependence of tunnel junction resistance R_T on junction length. An agreement with experiment to within a factor of 2 over 4 orders of magnitude in R_T is found, and this model allows to accurately determine the barrier height V₀ = 57.5 ± 1 meV and lateral seam s_xy = 0.39 ± 0.01 nm in these nanoscale junctions. This study confirms the use of the TB-NEGF formalism to accurately model highly doped atomically precise tunnel junctions in silicon. Further applications of this model will enable improved device performance at the nanoscale.     

扫描隧道显微镜（STM）在纳米结构制造中的应用

本文简要地阐明了扫描隧道显微镜(STM)的工作原理,详细地介绍了STM 在纳米结构制造中的一些应用,包括 STM 诱导淀积和刻蚀,STM 直接刻写、电子束光刻和移动单个原子等。     

Phase Segregation in Thin Films of Conjugated Polyrotaxane– Poly(ethylene oxide) Blends: A Scanning Force Microscopy Study

Scanning force microscopy (SFM) is used to study the surface morphology of spin‐coated thin films of the ion‐transport polymer poly(ethylene oxide) (PEO) blended with either cyclodextrin (CD)‐threaded conjugated polyrotaxanes based on poly(4,4′‐diphenylene‐vinylene) (PDV), β‐CD–PDV, or their uninsulated PDV analogues. Both the polyrotaxanes and their blends with PEO are of interest as active materials in light‐emitting devices. The SFM analysis of the blended films supported on mica and on indium tin oxide (ITO) reveals in both cases a morphology that reflects the substrate topography on the (sub‐)micrometer scale and is characterized by an absence of the surface structure that is usually associated with phase segregation. This observation confirms a good miscibility of the two hydrophilic components, when deposited by using spin‐coating, as suggested by the luminescence data on devices and thin films. Clear evidence of phase segregation is instead found when blending PEO with a new organic‐soluble conjugated polymer such as a silylated poly(fluorene)‐alt‐poly(para‐phenylene) based polyrotaxane (THS–β‐CD–PF–PPP). The results obtained are relevant to the understanding of the factors influencing the interfacial and the intermolecular interactions with a view to optimizing the performance of light‐emitting diodes, and light‐emitting electrochemical cells based on supramolecularly engineered organic polymers.     

Nanoscale Mapping of the Conductivity and Interfacial Capacitance of an Electrolyte-Gated Organic Field-Effect Transistor under Operation

Probing nanoscale electrical properties of organic semiconducting materials at the interface with an electrolyte solution under externally applied voltages is key in the field of organic bioelectronics. It is demonstrated that the conductivity and interfacial capacitance of the active channel of an electrolyte-gated organic field-effect transistor (EGOFET) under operation can be probed at the nanoscale using scanning dielectric microscopy in force detection mode in liquid environment. Local electrostatic force versus gate voltage transfer characteristics are obtained on the device and correlated with the global current–voltage transfer characteristics of the EGOFET. Nanoscale maps of the conductivity of the semiconducting channel show the dependence of the channel conductivity on the gate voltage and its variation along the channel due to the space charge limited conduction. The maps reveal very small electrical heterogeneities, which correspond to local interfacial capacitance variations due to an ultrathin non-uniform insulating layer resulting from a phase separation in the organic semiconducting blend. Present results offer insights into the transduction mechanism at the organic semiconductor/electrolyte interfaces at scales down to ≈100 nm, which can bring substantial optimization of organic electronic devices for bioelectronic applications such as electrical recording on excitable cells or label-free biosensing.     

STM Lithography in an Organic Self‐Assembled Monolayer

We describe the suitability of ultra‐high vacuum scanning tunneling microscopy (UHV‐STM) based nanolithography by using highly ordered monomolecular organic films, called self‐assembled monolayers (SAMs), as ultrathin resists. Organothiol‐type SAMs such as hexadecanethiol (SH–(CH₂)₁₅–CH₃) and N‐biphenylthiol (SH–(C₆H₆)₂–NO₂) monolayers have been prepared by immersion on gold films and Au(111) single crystals. Organosilane‐type SAMs such as octadecyltrichlorosilane (SiCl₃–(CH₂)₁₇–CH₃) monolayers have been prepared on hydroxylated Si(100) surfaces as well as hydroxylated chromium film surfaces. Dense line patterns have been written by UHV‐STM in constant current mode for various tunneling parameters (gap voltage, tunneling current, scan speed, and orientation) and transferred into the underlying substrate by wet etch techniques. The etched structures have been analyzed by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). Best resolution has been achieved without etch transfer for a 20 nm × 20 nm square written in hexadecanethiol/Au(111) with an edge definition of about 5 nm. Etch transfer of the STM nanopatterns in Au films resulted in 55 nm dense line patterns (15 nm deep) mainly broadened by the isotropic etch characteristic, while 35 nm wide and 30 nm deep dense line patterns written in octadecyltrichlorosilane/Si(100) and anisotropically etched into Si(100) could be achieved.     

Understanding the Beneficial Role of Grain Boundaries in Polycrystalline Solar Cells from Single‐Grain‐Boundary Scanning Probe Microscopy

The superior performance of certain polycrystalline (PX) solar cells compared to that of corresponding single‐crystal ones has been an enigma until recently. Conventional knowledge predicted that grain boundaries serve as traps and recombination centers for the photogenerated carriers, which should decrease cell performance. To understand if cell performance is limited by grain bulk, grain surface, and/or grain boundaries (GBs), we performed high‐resolution mapping of electronic properties of single GBs and grain surfaces in PX p‐CdTe/n‐CdS solar cells. Combining results from scanning electron and scanning probe microscopies, viz., capacitance, Kelvin probe, and conductive probe atomic force microscopies, and comparing images taken under varying conditions, allowed elimination of topography‐related artifacts and verification of the measured properties. Our experimental results led to several interesting conclusions: 1) current is depleted near GBs, while photocurrents are enhanced along the GB cores; 2) GB cores are inverted, which explains GB core conduction. Conclusions (1) and (2) imply that the regions around the GBs function as an extension of the carrier‐collection volume, i.e., they participate actively in the photovoltaic conversion process, while conclusion (2) implies minimal recombination at the GB cores; 3) the surface potential is diminished near the GBs; and 4) the photovoltaic and metallurgical junction in the n‐CdS/p‐CdTe devices coincide. These conclusions, taken together with gettering of defects and impurities from the bulk into the GBs, explain the good photovoltaic performance of these PX cells (at the expense of some voltage loss, as is indeed observed). We show that these CdTe GB features are induced by the CdCl₂ heat treatment used to optimize these cells in the production process.     

Understanding Degradation Mechanisms in SrIrO3 Oxygen Evolution Electrocatalysts: Chemical and Structural Microscopy at the Nanoscale

Designing acid-stable oxygen evolution reaction electrocatalysts is key to developing sustainable energy technologies such as polymer electrolyte membrane electrolyzers but has proven challenging due to the high applied anodic potentials and corrosive electrolyte. This work showcases advanced nanoscale microscopy techniques supported by complementary structural and chemical characterization to develop a fundamental understanding of stability in promising SrIrO₃ thin film electrocatalyst materials. Cross-sectional high-resolution transmission electron microscopy illustrates atomic-scale bulk and surface structure, while secondary ion mass spectrometry imaging using a helium ion microscope provides the nanoscale lateral elemental distribution at the surface. After accelerated degradation tests under anodic potential, the SrIrO₃ film thins and roughens, but the lateral distribution of Sr and Ir remains homogeneous. A layer-wise dissolution mechanism is hypothesized, wherein anodic potential causes the IrO_x-rich surface to dissolve and be regenerated by Sr leaching. The characterization approaches utilized herein and mechanistic insights into SrIrO₃ are translatable to a wide range of catalyst systems.     

扫描近场光学显微镜在生物学领域的应用

介绍了近期扫描近场光学显微镜（SNOM）在单分子探测、细胞精细结构和微生物学等研究领域中的应用进展,介绍了“量子荧光探针”、“生物纳米光学”的概念,指出了SNOM在细胞内部或膜表面进行单分子探测与单分子量化研究中的难题,并提出将其与超薄切片相结合以解决这些难题的思路。SNOM在各个领域的应用研究还远远不足,需要做更多的工作,其成像原理及图像数据的解析还需作深入研究。     

共焦扫描显微术中影响轴向分辨率的因素分析

着重分析了共焦扫描术中影响轴向分辨率的各种因素 ,并给出了初步的实验结果 ,同时讨论了优化轴向分辨率的可能途径     

Nanoscale Conducting Channels at the Surface of Organic Semiconductors Formed by Decoration of Molecular Steps with Self‐Assembled Molecules

Under certain conditions, self‐assembling molecules preferentially bind to molecular steps at the surface of crystalline organic semiconductors, inducing a strong local doping effect. This creates macroscopically long conducting paths of nanoscale width (a single crystalline analogue of organic nanowires) that can span distances of up to 1 cm between electrical contacts. The observed effect of molecular step decoration opens intriguing possibilities for visualization, passivation, and selective doping of surface and interfacial defects in organic electronic devices and provides a novel system for research on nanoscale charge transport in organic semiconductors. In addition, this effect sheds light on the microscopic origin of nucleation and growth of self‐assembled monolayers at organic surfaces. It can also have implications in electronic patterning, nanoscale chemical sensors, integrated interconnects and charge‐transfer interfaces in organic transistors and solar cells.     

Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields

Simulations of Scanning Electron Microscopy images of semiconductor devices in the presence of electric fields are usually too simplistic, since they just rely on approximated solutions of the Poisson equation. In this paper, the 3D Poisson equation is solved in a TCAD environment, which accounts for realistic boundary conditions, as well as for complex physical effects like the formation of space charge regions in semiconductors and the polarization of dielectrics. The calculated solution is then passed to a Monte Carlo code that implements a new electron tracking engine optimized for speed, stability, and accuracy. After introducing the new tracking engine, three simulation examples are presented dealing with the presence of an extraction field, self-charging of the irradiated sample, and potential contrast in a biased silicon junction.