Cover Picture: High Definition Digital Fabrication of Active Organic Devices by Molecular Jet Printing (Adv. Funct. Mater. 15/2007)

A new method for direct patterning of organic optoelectronic/electronic devices using a reconfigurable and scalable printing method is reported by Vladimir Bulovic and co‐workers on p. 2722. The printing technique is applied to the fabrication of high‐resolution printed organic light emitting devices (OLEDs) and organic field effect transistors (OFETs). Remarkably, the final print‐deposited films are evaporated onto the substrate (rather than solvent printed), giving high‐quality, solvent‐free, molecularly flat structures that match the performance of comparable high‐performance unpatterned films. We introduce a high resolution molecular jet (MoJet) printing technique for vacuum deposition of evaporated thin films and apply it to fabrication of 30 μm pixelated (800 ppi) molecular organic light emitting devices (OLEDs) based on aluminum tris(8‐hydroxyquinoline) (Alq₃) and fabrication of narrow channel (15 μm) organic field effect transistors (OFETs) with pentacene channel and silver contacts. Patterned printing of both organic and metal films is demonstrated, with the operating properties of MoJet‐printed OLEDs and OFETs shown to be comparable to the performance of devices fabricated by conventional evaporative deposition through a metal stencil. We show that the MoJet printing technique is reconfigurable for digital fabrication of arbitrary patterns with multiple material sets and high print accuracy (of better than 5 μm), and scalable to fabrication on large area substrates. Analogous to the concept of “drop‐on‐demand” in Inkjet printing technology, MoJet printing is a “flux‐on‐demand” process and we show it capable of fabricating multi‐layer stacked film structures, as needed for engineered organic devices.     

High Frequency Solution-Processed Organic Field-Effect Transistors with High-Resolution Printed Short Channels

Organic electronics is an emerging technology that enables the fabrication of devices with low-cost and simple solution-based processes at room temperature. In particular, it is an ideal candidate for the Internet of Things since devices can be easily integrated in everyday objects, potentially creating a distributed network of wireless communicating electronics. Recent efforts allowed to boost operational frequency of organic field-effect transistors (OFETs), required to achieve efficient wireless communication. However, in the majority of cases, in order to increase the dynamic performances of OFETs, masks based lithographic techniques are used to reduce device critical dimensions, such as channel and overlap lengths. This study reports the successful integration of direct written metal contacts defining a 1.4 µm short channel, printed with ultra-precise deposition technique (UPD), in fully solution fabricated n-type OFETs. An average transition frequency as high as 25.5 MHz is achieved at 25 V. This result demonstrates the potential of additive, high-resolution direct-writing techniques for the fabrication of organic electronics operating in the high-frequency regime.     

Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Inkjet‐Printed Chemical Doping for High Performance Complementary Circuits

The selective tuning of the operational mode from ambipolar to unipolar transport in organic field‐effect transistors (OFETs) by printing molecular dopants is reported. The field‐effect mobility (μ_FET) and onset voltage (V_on) of both for electrons and holes in initially ambipolar methanofullerene [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) OFETs are precisely modulated by incorporating a small amount of cesium fluoride (CsF) n‐type dopant or tetrafluoro‐tetracyanoquinodimethane (F4‐TCNQ) p‐type dopant for n‐channel or p‐channel OFETs either by blending or inkjet printing of the dopant on the pre‐deposited semiconductor. Excess carriers introduced by the chemical doping compensate traps by shifting the Fermi level (E_F) toward respective transport energy levels and therefore increase the number of mobile charges electrostatically accumulated in channel at the same gate bias voltage. In particular, n‐doped OFETs with CsF show gate‐voltage independent Ohmic injection. Interestingly, n‐ or p‐doped OFETs show a lower sensitivity to gate‐bias stress and an improved ambient stability with respect to pristine devices. Finally, complementary inverters composed of n‐ and p‐type PCBM OFETs are demonstrated by selective doping of the pre‐deposited semiconductor via inkjet printing of the dopants.     

Efficient Conjugated‐Polymer Optoelectronic Devices Fabricated by Thin‐Film Transfer‐Printing Technique

The fabrication of functional multilayered conjugated‐polymer structures with well‐defined organic‐organic interfaces for optoelectronic‐device applications is constrained by the common solubility of many polymers in most organic solvents. Here, we report a simple, low‐cost, large‐area transfer‐printing technique for the deposition and patterning of conjugated‐polymer thin films. This method utilises a planar poly(dimethylsiloxane) (PDMS) stamp, along with a water‐soluble sacrificial layer, to pick up an organic thin film (～20 nm to 1 µm) from a substrate and subsequently deliver this film to a target substrate. We demonstrate the versatility of this transfer‐printing technique and its applicability to optoelectronic devices by fabricating bilayer structures of poly(9,9‐di‐n‐octylfluorene‐alt‐(1,4‐phenylene‐((4‐sec‐butylphenyl)imino)‐1,4‐phenylene))/poly(9,9‐di‐n‐octylfluorene‐alt‐benzothiadiazole) (TFB/F8BT) and poly(3‐hexylthiophene)/methanofullerene([6,6]‐phenyl C₆₁ butyric acid methyl ester) (P3HT/PCBM), and incorporating them into light‐emitting diodes (LEDs) and photovoltaic (PV) cells, respectively. For both types of device, bilayer devices fabricated with this transfer‐printing technique show equal, if not superior, performance to either blend devices or bilayer devices fabricated by other techniques. This indicates well‐controlled organic‐organic interfaces achieved by the transfer‐printing technique. Furthermore, this transfer‐printing technique allows us to study the nature of the excited states and the transport of charge carriers across well‐defined organic interfaces, which are of great importance to organic electronics.     

Low‐Voltage,High‐Performance Organic Field‐Effect Transistors with an Ultra‐Thin TiO2 Layer as Gate Insulator

We report on our latest improvements in organic field‐effect transistors (OFETs) using ultra‐thin anodized gate insulators. Anodization of titanium (Ti) is an extremely cheap and simple technique to obtain high‐quality, very thin (～ 7.5 nm), pinhole‐free, and robust gate insulators for OFETs. The anodized insulators have been tested in transistors using pentacene and poly(triarylamine) (PTAA) as active layers. The fabricated devices display low‐threshold, normally “off” OFETs with negligible hysteresis, good carrier mobility, high gate capacitance, and exceptionally low inverse subthreshold slope. Device performance is improved via chemical modification of TiO₂ with an octadecyltrichlorosilane (OTS) self‐assembled monolayer (SAM). As the result of this combination of favorable properties, we have demonstrated OFETs that can be operated with voltages well below 1 V.     

Tuning Contact Resistance in Top‐Contact p‐Type and n‐Type Organic Field Effect Transistors by Self‐Generated Interlayers

Contact resistance significantly limits the performance of organic field‐effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work‐function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom‐contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top‐contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p‐ and n‐type devices that is also suitable for top‐contact OFETs. In this approach, judiciously selected interlayer molecules are co‐deposited as additives in the semiconducting polymer active layer. During top contact deposition, the additive molecules migrate from within the bulk film to the organic/metal interface due to additive‐metal interactions. Migration continues until a thin continuous interlayer is completed. Formation of the interlayer is confirmed by X‐ray photoelectron spectroscopy (XPS) and cross‐section scanning transmission electron microscopy (STEM), and its effect on contact resistance by device measurements and transfer line method (TLM) analysis. It is shown that self‐generated interlayers that reduce contact resistance in p‐type devices, increase that of n‐type devices, and vice versa, confirming the role of additives as interlayer materials that modulate the effective work‐function of the organic/metal interface.     

Growth and Properties of Hybrid Organic‐Inorganic Metalcone Films Using Molecular Layer Deposition Techniques

Molecular layer deposition (MLD) is a useful technique for fabricating hybrid organic‐inorganic thin films. MLD allows for the growth of ultrathin and conformal films using sequential, self‐limiting reactions. This article focuses on the MLD of hybrid organic‐inorganic films grown using metal precursors and various organic alcohols that yield metal alkoxide films. This family of metal alkoxides can be described as “metalcones”. Many metalcones are possible, such as the “alucones” and “zincones” based on the reaction of trimethylaluminum and diethylzinc, respectively, with various organic diols such as ethylene glycol. Alloys of the various metalcones with their parent metal oxide atomic layer deposition (ALD) films can also be fabricated that have an organic‐inorganic composition that can be adjusted by controlling the relative number of ALD and MLD cycles. These metalcone alloys have tunable chemical, optical, mechanical, and electrical properties that may be useful for designing various functional films. The metalcone hybrid organic‐inorganic materials offer a new tool set for engineering thin film properties.     

Porous Organic Field‐Effect Transistors for Enhanced Chemical Sensing Performances

The thin‐film structures of chemical sensors based on conventional organic field‐effect transistors (OFETs) can limit the sensitivity of the devices toward chemical vapors, because charge carriers in OFETs are usually concentrated within a few molecular layers at the bottom of the organic semiconductor (OSC) film near the dielectric/semiconductor interface. Chemical vapor molecules have to diffuse through the OSC films before they can interact with charge carriers in the OFET conduction channel. It has been demonstrated that OFET ammonia sensors with porous OSC films can be fabricated by a simple vacuum freeze‐drying template method. The resulted devices can have ammonia sensitivity not only much higher than the pristine OFETs with thin‐film structure but also better than any previously reported OFET sensors, to the best of our knowledge. The porous OFETs show a relative sensitivity as high as 340% ppm^?1 upon exposure to 10 parts per billion (ppb) NH₃. In addition, the devices also exhibit decent selectivity and stability. This general and simple strategy can be applied to a wide range of OFET chemical sensors to improve the device sensitivity.     

“Layer‐Filter Threshold” Technique for Near‐Infrared Laser Ablation in Organic Semiconductor Device Processing

Although conventional laser ablation (CLA) method has widely been used in patterning of organic semiconductor thin films, its quality control still remains unsatisfied due to the ambiguous photochemical and photothermal processes. Based on industrial available near‐infrared laser source, herein, a novel “layer‐filter threshold” (LFT) technique is proposed, which involves the decomposition of targeted “layer‐filter” and subsequent explosive evaporation process to purge away the upper layers instead of layer‐by‐layer ablation. For photovoltaic device with structure of metal/blend/PEDOT:PSS/ITO/glass, the PEDOT:PSS layer as the “layer‐filter” is first demonstrated to be effective, and then the merged P1–P2 line and metal electrode layer are readily patterned through the “self‐aligned” effect and regulation of ablation direction, respectively. The correlation between laser fluence and explosive ablation efficacy is also investigated. Finally, photovoltaic modules based on classical P3HT:PC₆₁BM and low‐bandgap PBDT‐TFQ:PC₇₁BM systems are separately fabricated following the LFT technique. It is found that over 90% of geometric fill factor is achieved while device performances maintain in a limited change with increased number of series cells. In comparison to conventional laser ablation methods, the LFT technique does not require sophisticated instruments but reaches comparable processing accuracy, which shows promising potential in the fabrication and commercialization of organic semiconductor thin‐film devices.     

Inkjet‐Printed Organic Electrodes for Bottom‐Contact Organic Field‐Effect Transistors

A graphite thin film was investigated as the drain and source electrodes for bottom‐contact organic field‐effect transistors (BC OFETs). Highly conducting electrodes (10² S cm^?1) at room temperature were obtained from pyrolyzed poly(l,3,4‐oxadiazole) (PPOD) thin films that were prepatterned with a low‐cost inkjet printing method. Compared to the devices with traditional Au electrodes, the BC OFETs showed rather high performances when using these source/drain electrodes without any further modification. Being based on a graphite‐like material these electrodes possess excellent compatibility and proper energy matching with both p‐ and n‐type organic semiconductors, which results in an improved electrode/organic‐layer contact and homogeneous morphology of the organic semiconductors in the conducting channel, and finally a significant reduction of the contact resistance and enhancement of the charge‐carrier mobility of the devices is displayed. This work demonstrates that with the advantages of low‐cost, high‐performance, and printability, PPOD could serve as an excellent electrode material for BC OFETs.     

Control of the Morphology and Structural Development of Solution‐Processed Functionalized Acenes for High‐Performance Organic Transistors

Solution‐processable functionalized acenes have received special attention as promising organic semiconductors in recent years because of their superior intermolecular interactions and solution‐processability, and provide useful benchmarks for organic field‐effect transistors (OFETs). Charge‐carrier transport in organic semiconductor thin films is governed by their morphologies and molecular orientation, so self‐assembly of these functionalized acenes during solution processing is an important challenge. This article discusses the charge‐carrier transport characteristics of solution‐processed functionalized acene transistors and, in particular, focuses on the fine control of the films' morphologies and structural evolution during film‐deposition processes such as inkjet printing and post‐deposition annealing. We discuss strategies for controlling morphologies and crystalline microstructure of soluble acenes with a view to fabricating high‐performance OFETs.     

Inkjet‐Printed Single‐Droplet Organic Transistors Based on Semiconductor Nanowires Embedded in Insulating Polymers

Fabrication of organic field‐effect transistors (OFETs) using a high‐throughput printing process has garnered tremendous interest for realizing low‐cost and large‐area flexible electronic devices. Printing of organic semiconductors for active layer of transistor is one of the most critical steps for achieving this goal. The charge carrier transport behavior in this layer, dictated by the crystalline microstructure and molecular orientations of the organic semiconductor, determines the transistor performance. Here, it is demonstrated that an inkjet‐printed single‐droplet of a semiconducting/insulating polymer blend holds substantial promise as a means for implementing direct‐write fabrication of organic transistors. Control of the solubility of the semiconducting component in a blend solution can yield an inkjet‐printed single‐droplet blend film characterized by a semiconductor nanowire network embedded in an insulating polymer matrix. The inkjet‐printed blend films having this unique structure provide effective pathways for charge carrier transport through semiconductor nanowires, as well as significantly improve the on‐off current ratio and the environmental stability of the printed transistors.     

Rheological and Drying Considerations for Uniformly Gravure‐Printed Layers: Towards Large‐Area Flexible Organic Light‐Emitting Diodes

Printing organic semiconductor inks by means of roll‐to‐roll compatible techniques will allow a continuous, high‐volume fabrication of large‐area flexible optoelectronic devices. The gravure printing technique is set to become a widespread process for the high throughput fabrication of functional layers. The gravure printing process of a poly‐phenylvinylene derivative light‐emitting polymer dissolved in a two solvent mixture on poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is studied. The surface tensions, contact angles, viscosities, and drying times of the formulations are investigated as a function of the solvent volume fraction and polymer concentration. The properties of the ink grant a homogeneous printed layer, suitable for device fabrication, when the calculated film leveling time is shorter than a critical time, at which the film has been frozen due to loss of solvent via evaporation. The knowledge obtained from the printing process is applied to fabricate organic light‐emitting diodes (OLEDs) on flexible substrates, yielding a luminance of ≈5000 cd m^?2.     

Solution‐Processed Full‐Color Polymer Organic Light‐Emitting Diode Displays Fabricated by Direct Photolithography

The first full‐color polymer organic light‐emitting diode (OLED) display is reported, fabricated by a direct photolithography process, that is, a process that allows direct structuring of the electroluminescent layer of the OLED by exposure to UV light. The required photosensitivity is introduced by attaching oxetane side groups to the backbone of red‐, green‐, and blue‐light‐emitting polymers. This allows for the use of photolithography to selectively crosslink thin films of these polymers. Hence the solution‐based process requires neither an additional etching step, as is the case for conventional photoresist lithography, nor does it rely on the use of prestructured substrates, which are required if ink‐jet printing is used to pixilate the emissive layer. The process allows for low‐cost display fabrication without sacrificing resolution: Structures with features in the range of 2 μm are obtained by patterning the emitting polymers via UV illumination through an ultrafine shadow mask. Compared to state‐of‐the‐art fluorescent OLEDs, the display prototype (pixel size 200 μm × 600 μm) presented here shows very good efficiency as well as good color saturation for all three colors. The application in solid‐state lighting is also possible: Pure white light [Commision Internationale de l'Éclairage (CIE) values of 0.33, 0.33 and color rendering index (CRI) of 76] is obtained at an efficiency of 5 cd A^–1 by mixing the three colors in the appropriate ratio. For further enhancement of the device efficiency, an additional hole‐transport layer (HTL), which is also photo‐crosslinkable and therefore suitable to fabricate multilayer devices from solution, is embedded between the anode and the electroluminescent layer.     

Direct Ink‐Jet Printing of Ag–Cu Nanoparticle and Ag‐Precursor Based Electrodes for OFET Applications

The field of organic electronics has seen tremendous progress over the last years and all‐solution‐based processes are believed to be one of the key routes to ultra low‐cost roll‐to‐roll device and circuit fabrication. In this regard a variety of functional materials has been successfully designed for inkjet printing. While orthogonal‐solvent approaches have frequently been used to tackle the solubility issue in multilayer solution processing, the focus of this work lies on printed metal electrodes for organic field‐effect transistors (OFET) and their curing concepts. Two metallic inkjet‐printable materials are studied: i) a silver‐copper nanoparticle based dispersion and ii) a soluble organic silver‐precursor. Photoelectron spectroscopy reveals largely metallic properties of the cured materials, which are compared with respect to OFET performance and process‐related issues. Contact resistance of the prepared metal electrodes is significantly larger than that of evaporated top‐contact gold electrodes. As direct patterning via inkjet printing limits the reliably achievable channel length to values well above 10 μm, the influence of contact resistance is rather small, however, and overall device performance is comparable.     

Realizing the Potential of ZnO with Alternative Non‐Metallic Co‐Dopants as Electrode Materials for Small Molecule Optoelectronic Devices

High performance indium tin oxide (ITO)‐free small molecule organic solar cells and organic light‐emitting diodes (OLEDs) are demonstrated using optimized ZnO electrodes with alternative non‐metallic co‐dopants. The co‐doping of hydrogen and fluorine reduces the metal content of ZnO thin films, resulting in a low absorption coefficient, a high transmittance, and a low refractive index as well as the high conductivity, which are needed for the application in organic solar cells and OLEDs. While the established metal‐doped ZnO films have good electrical and optical properties, their application in organic devices is not as efficient as other alternative electrode approaches. The optimized ZnO electrodes presented here are employed in organic solar cells as well as OLEDs and allow not only the replacement of ITO, but also significantly improve the efficiency compared to lab‐standard ITO. The enhanced performance is attributed to outstanding optical properties and spontaneously nanostructured surfaces of the ZnO films with non‐metallic co‐dopants and their straightforward integration with molecular doping technology, which avoids several common drawbacks of ZnO electrodes. The observations show that optimized ZnO films with non‐metallic co‐dopants are a promising and competitive electrode for low‐cost and high performance organic solar cells and OLEDs.     

Heterojunction Ambipolar Organic Transistors Fabricated by a Two‐Step Vacuum‐Deposition Process

Ambipolar organic field‐effect transistors (OFETs) are produced, based on organic heterojunctions fabricated by a two‐step vacuum‐deposition process. Copper phthalocyanine (CuPc) deposited at a high temperature (250 °C) acts as the first (p‐type component) layer, and hexadecafluorophthalocyaninatocopper (F₁₆CuPc) deposited at room temperature (25 °C) acts as the second (n‐type component) layer. A heterojunction with an interpenetrating network is obtained as the active layer for the OFETs. These heterojunction devices display significant ambipolar charge transport with symmetric electron and hole mobilities of the order of 10^–4 cm² V^–1 s^–1 in air. Conductive channels are at the interface between the F₁₆CuPc and CuPc domains in the interpenetrating networks. Electrons are transported in the F₁₆CuPc regions, and holes in the CuPc regions. The molecular arrangement in the heterojunction is well ordered, resulting in a balance of the two carrier densities responsible for the ambipolar electrical characteristics. The thin‐film morphology of the organic heterojunction with its interpenetrating network structure can be controlled well by the vacuum‐deposition process. The structure of interpenetrating networks is similar to that of the bulk heterojunction used in organic photovoltaic cells, therefore, it may be helpful in understanding the process of charge collection in organic photovoltaic cells.     

Two-step fabrication of thin film encapsulation using laser assisted chemical vapor deposition and laser assisted plasma enhanced chemical vapor deposition for long-lifetime organic light emitting diodes

A thin film encapsulation layer was fabricated through two-sequential chemical vapor deposition processes for organic light emitting diodes (OLEDs). The fabrication process consists of laser assisted chemical vapor deposition (LACVD) for the first silicon nitride layer and laser assisted plasma enhanced chemical vapor deposition (LAPECVD) for the second silicon nitride layer. While SiN_x thin films fabricated by LAPECVD exhibits remarkable encapsulation characteristics, OLEDs underneath the encapsulation layer risk being damaged during the plasma generation process. In order to prevent damage from the plasma, LACVD was completed prior to the LAPECVD as a buffer layer so that the laser during LACVD did not damage the devices because there was no direct irradiation to the surface. This two-step thin film encapsulation was performed sequentially in one chamber, which reduced the process steps and increased fabrication time. The encapsulation was demonstrated on green phosphorescent OLEDs with I–V-L measurements and a lifetime test. The two-step encapsulation process alleviated the damage on the devices by 19.5% in external quantum efficiency compared to the single layer fabricated by plasma enhanced chemical vapor deposition. The lifetime was increased 3.59 times compared to the device without encapsulation. The composition of the SiNx thin films was analyzed through Fourier-transform infrared spectroscopy (FTIR). While the atomic bond in the layer fabricated by LACVD was too weak to be used in encapsulation, the layer fabricated by the two-step encapsulation did not reveal a Si–O bonding peak but did show a Si–N peak with strong atomic bonding.     

Liquid Metal Based Island‐Bridge Architectures for All Printed Stretchable Electrochemical Devices

The adoption of epidermal electronics into everyday life requires new design and fabrication paradigms, transitioning away from traditional rigid, bulky electronics towards soft devices that adapt with high intimacy to the human body. Here, a new strategy is reported for fabricating achieving highly stretchable “island‐bridge” (IB) electrochemical devices based on thick‐film printing process involving merging the deterministic IB architecture with stress‐enduring composite silver (Ag) inks based on eutectic gallium‐indium particles (EGaInPs) as dynamic electrical anchors within the inside the percolated network. The fabrication of free‐standing soft Ag‐EGaInPs‐based serpentine “bridges” enables the printed microstructures to maintain mechanical and electrical properties under an extreme (≈800%) strain. Coupling these highly stretchable “bridges” with rigid multifunctional “island” electrodes allows the realization of electrochemical devices that can sustain high mechanical deformation while displaying an extremely attractive and stable electrochemical performance. The advantages and practical utility of the new printed Ag‐liquid metal‐based island‐bridge designs are discussed and illustrated using a wearable biofuel cell. Such new scalable and tunable fabrication strategy will allow to incorporate a wide range of materials into a single device towards a wide range of applications in wearable electronics.     

Self‐Assembled,Millimeter‐Sized TIPS‐Pentacene Spherulites Grown on Partially Crosslinked Polymer Gate Dielectric

Here, a highly crystalline and self‐assembled 6,13‐bis(triisopropylsilylethynyl) pentacene (TIPS‐Pentacene) thin films formed by simple spin‐coating for the fabrication of high‐performance solution‐processed organic field‐effect transistors (OFETs) are reported. Rather than using semiconducting organic small‐molecule–insulating polymer blends for an active layer of an organic transistor, TIPS‐Pentacene organic semiconductor is separately self‐assembled on partially crosslinked poly‐4‐vinylphenol:poly(melamine‐co‐formaldehyde) (PVP:PMF) gate dielectric, which results in a vertically segregated semiconductor‐dielectric film with millimeter‐sized spherulite‐crystalline morphology of TIPS‐Pentacene. The structural and electrical properties of TIPS‐Pentacene/PVP:PMF films have been studied using a combination of polarized optical microscopy, atomic force microscopy, 2D‐grazing incidence wide‐angle X‐ray scattering, and secondary ion mass spectrometry. It is finally demonstrated a high‐performance OFETs with a maximum hole mobility of 3.40 cm² V^?1 s^?1 which is, to the best of our knowledge, one of the highest mobility values for TIPS‐Pentacene OFETs fabricated using a conventional solution process. It is expected that this new deposition method would be applicable to other small molecular semiconductor–curable polymer gate dielectric systems for high‐performance organic electronic applications.