Planar optical waveguides formed in β-BBO by MeV O+ implantation

The planar waveguides have been fabricated in z-cut β-BaB₂O₄ crystal by 2.8 MeV O⁺ ion implantation with the doses of 8×10¹⁴ and 2×10¹⁵ ions/cm² at room temperature. The waveguides were characterized by the prism-coupling method. The dark modes are measured before and after the annealing at 300°C for 20 and 40 min in air. The refractive index profile is reconstructed using the reflectivity calculation method. It is found that relatively large positive changes of extraordinary refractive indices happen in the guiding regions, and a slight change increases with the doses, which are different from most of the observed ion-implanted waveguides.     

Effect of Ni7+ Ion Irradiation on Structure and Ammonia Sensing Properties of Thermally Oxidized Zinc and Indium Films

ZnO and In2O3 films were prepared by thermal oxidation of vacuum deposited zinc and indium films, respectively onto the glass substrate at 30 C. The fabricated films have been irradiated with 100-MeV Ni7+ ions at different fluences ranging from 5×1011 to 5×1013 ions/cm2. The structural and gas sensing properties of pristine and irradiated films have been discussed. X-ray diffraction (XRD) pattern of pristine and irradiated films reveal that the films are polycrystalline in nature and crystallinity increases after irradiation. In this study, highly porous In2O3 nanorods evolved when being irradiated at a fluence of 5×1013 ions/cm2 while ZnO film shows decrease in number of nanowires. The ammonia sensing performance of the Ni7+ irradiated In2O3 films shows an improvement as compared to its pristine counterpart.     

NIR luminescent Er/Yb co-doped SiO2–ZrO2 nanostructured planar and channel waveguides: Optical and structural properties

Optical and structural properties of planar and channel waveguides based on sol–gel Er³⁺ and Yb³⁺ co-doped SiO₂–ZrO₂ are reported. Microstructured channels with high homogeneous surface profile were written onto the surface of multilayered densified films deposited on SiO₂/Si substrates by a femtosecond laser etching technique. The densification of the planar waveguides was evaluated from changes in the refractive index and thickness, with full densification being achieved at 900 °C after annealing from 23 up to 500 min, depending on the ZrO₂ content. Crystal nucleation and growth took place together with densification, thereby producing transparent glass ceramic planar waveguides containing rare earth-doped ZrO₂ nanocrystals dispersed in a silica-based glassy host. Low roughness and crack-free surface as well as high confinement coefficient were achieved for all the compositions. Enhanced NIR luminescence of the Er³⁺ ions was observed for the Yb³⁺-codoped planar waveguides, denoting an efficient energy transfer from the Yb³⁺ to the Er³⁺ ion.     

Optical waveguides formed in Nd:YVO4 crystals by C2+ implantation

This work reports the formation of planar and channel waveguides in Nd:YVO₄ by carbon implantation, using doses as low as 5?×?10¹⁴?ions/cm². The analysis includes refractive index profiles, propagation losses and spectroscopic properties. The results indicate that there is an index convergence, the ordinary index increases while the extraordinary index decreases. The spectroscopic studies show that emission bands coming from the ⁴F_3/2 level are not altered by the ion beam process, shedding light on the potential of carbon implanted waveguides for laser integrated devices.     

Fabrication of ridge waveguides: a new solgel route

Passive ridge waveguides can be deposited on silicon by a solvent-assisted lithographic process incorporating simple mask technology and photosensitive solgel-derived glasses. Thick films (~4 mum) are dip coated in one step, and channel waveguides and power splitters are imprinted in them by UV light through appropriate masks. Unexposed regions of the glass are removed by soaking of the films in n-propanol. The remaining ridges are then treated at 200 degrees C and planarized with a solgel cladding layer. Circular mode profiles are observed from ridge guides covered with the cladding. The waveguides are characterized with scanning electron microscopy, atomic force microscopy, surface profilometry, ellipsometry, and fiber end coupling. Overall, the procedure is simple and reproducible and leads to waveguides with low loss, of the order of 0.13 dB/cm.     

Emission Properties of Yb3+/Er3+ Doped TeO2-WO3-ZnO Glasses for Broadband Optical Amplifiers

The YbS /Er3 doped TeO2-WO3-ZnO glasses were prepared. The absorption spectra, emission spectra and fluorescence lifetime of Era at 1.5μm, excited by 970 nm were measured. The influence of Er2Oa, Yb2Oa and Ohcontents on emission properties of Era at 1.5 μm was investigated. The optimum doping concentrations for Era and Yba is around 3.34× 1020 ions/cma and 6.63×1020 ions/cma, respectively. The peak emission cross section is 0.83～0.87 pm2. With the increasing concentration of Yba , the FWHM of Era emission at 1.5 μm in the glass increases from 77 nm to 83 nm. The results show that Yba /Era doped meO2-Woa-ZnO glasses are promising candidate for Era -doped broadband optical amplifier.     

Characteristics of polymeric optical passive single-mode waveguiding devices fabricated by an argon-ion laser

The fabrication of polymeric single-mode Gaussian profile optical waveguides is described. We used poly(methyl methacrylate) and a mixture of two intermiscible monomers for the cladding and the core, respectively, of the waveguides. The cores of the waveguides were fabricated by with an argon-ion laser beam. The waveguides had single-mode Gaussian refractive-index profiles. By using such waveguides, we fabricated directional couplers for power coupling to the adjacent waveguides and also parallel waveguide arrays for preventing power coupling to adjacent waveguides for use in interconnect chips. We analyzed the characteristics of these couplers by using the coupled-mode theory and compared the results with those obtained with the beam propagation method. Experimental results showed good correlation with the theoretical values. We designed optical bus arrays for interconnect chips, considering the variation of normalized frequency V, the power penalty, and the dimensions of the waveguides and the separation between them. The number of waveguides in the bus array increased with increasing V. For a known value of V, a waveguide's density increases with a decrease of its dimensions. The theoretical maximum number of waveguides is ~1490/cm and ~846/cm for 2 mum x 2 mum and 4 mum x 4 mum single-mode waveguides, respectively, to satisfy a 1-dB power penalty criterion at bit-error rate of 10(-9). We fabricated interconnect bus arrays with fifteen 4 mum x 4 mum waveguides for a 3-cm coupling length, and the experimental results were verified to be in good agreement with the theoretical values.     

Swift and heavy ion implanted chalcogenide laser glass waveguides and their different refractive index distributions

Planar waveguides have been fabricated in Nd- or Ho-doped gallium lanthanum sulfide laser glasses by 60?MeV Ar or 20?MeV N ion implantation. The refractive index profiles were reconstructed based on the results of prism coupling. The Ar implanted waveguides exhibit an approximate steplike distribution, while the N implanted ones show a "well + barrier" type. This difference can be attributed to the much lower dose of Ar ions. After annealing, the N implanted waveguides can support two modes at 1539?nm and have low propagation loss, which makes them candidates for novel waveguide lasers.     

Selective gas-phase cleavage at the peptide bond C-terminal to aspartic acid in fixed-charge derivatives of Asp-containing peptides

This study focuses on the molecular level interpretation of the selective gas-phase cleavage at aspartic acid residues (Asp) in protonated peptides. A phi3P+CH2C(=O)group (phi = 2,4,6-trimethoxyphenyl) is attached to the N-terminal nitrogen of the selected peptides LDIFSDF and LDIFSDFR, via solid-phase synthesis, to "mimic" the tightly held charge of a protonated arginine (Arg) residue. Collision-induced dissociation in a quadrupole ion trap instrument and surface-induced dissociation in a dual quadrupole instrument were performed for electrospray-generated ions of the fixed-charge peptide derivatives. Selective cleavages at Asp-Xxx are observed for those ions with charge provided only by the fixed charge or for those with a fixed charge and one Arg plus one added proton. This supports a previously proposed mechanism which suggests that the cleavages at Asp-Xxx, initiated by the acidic hydrogen of the Asp residue, become significant when ionizing protons are strongly bound by Arg in the protonated peptides. It is clear that the fixed charge is indeed serving as a "mimic" of protonated Arg and that a protonated Arg side chain is not required to interact with the Asp to induce cleavage at Asp-Xxx. When the number of protons exceeds the number of Arg in a peptide containing Arg and Asp, nonselective cleavages occur. The fragmentation efficiency of the peptides is consistent with the idea that these nonselective cleavages are promoted by a mobile proton. The peptide with a fixed charge and one added proton, [phi3P+CH2C(=O)-LDIFSDF + H]2+, fragments much more efficiently than the corresponding peptide with a fixed charge, an Arg and one added proton, [phi3P+CH2C(=O)-LDIFSDFR + H]2+; both of these fragment more efficiently than the peptide with a fixed charge and no added proton, phi3P+CH2C(=O)-LDIFSDF. MS/MS/MS (i.e., MS3) experimental results for bn ions formed at Asp-Xxx from phi3P+CH2C(=O)-LDIFSDF and its H/D exchange derivative, phi3P+CH2C(=O)-LDIFSDF-d11, are consistent with the bn ions formed at Asp-Xxx having a succinic anhydride cyclic structure. MS/MS experiments were also carried out for phi3P+CH2C(=O)-AAAA, a peptide derivative containing active hydrogens only at amide nitrogens plus the C-terminus, and its active H/D exchange product, phi3P+CH2C(=O)-AAAA-d5. The results show that a hydrogen originally located at an amide nitrogen is transferred away in the formation of a cyclic charge remote b ion.     

Broadband NIR emission in sol-gel Er(3+)-activated SiO2-Ta2O5 glass ceramic planar and channel waveguides for optical application

An Er(3+)-doped SiO2:Ta2O5 optical channel waveguide and nanocomposite were prepared by the sol-gel route at a Si:Ta 50:50 molar ratio. Channels with an excellent surface profile were easily and quickly fabricated by focusing a femtosecond laser onto the surface of multilayered films deposited on SiO2/Si substrates. In parallel, the same sol used to prepare the film was annealed at 900, 1000, and 1100 degrees C for 2 h, to get the nanocomposite materials. A broadband NIR emission around 1538 nm, assigned to the 4I13/2 --> 4I15/2 transition of the Er3+ ions was observed in the nanocomposites of amorphous SiO2 containing dispersed Ta2O5 nanocrystals. The 4I13/2 lifetime and emission bandwidth depend on the annealing temperature. In conclusion, Er(3+)-doped SiO2:Ta2O5 channel waveguides and nanocomposites are promising materials for photonic applications.     

Mid-infrared diffused planar waveguides made of silver halide chloro-bromide

We have developed waveguides for the mid-IR spectrum using silver halide crystals. Diffused planar waveguides constructed from silver chlorobromide (AgClBr) with different diffusion thicknesses were designed and characterized. The waveguides were based on our changing the refractive index of the guiding layer by a diffusion of Br- ions into crystalline AgCl substrates. The waveguides were analyzed and investigated with a 10.6-microm CO2 laser, and the optically measured thicknesses of the waveguides were found to vary between 65 and 600 microm. The propagation losses were in the range of 4-16 dB/cm, and the maximal entrance angle was 62 degrees. The output beam distribution was measured and was in good correlation with a numerical analysis simulation based on a ray-tracing model, by use of the eikonal equation.     

Annealing behavior of barriers in ion-implanted LiNbO3 and LiTaO3 planar waveguides

We formed planar waveguides in LiNbO(3) and LiTaO(3) crystals by megaelectron volt He-ion implantation. The dark modes of both waveguides are measured and their refractive-index profiles are described according to the parameterized index profile reconstruction method. The extraordinary indices of both ion-implanted waveguides exhibit quite different profiles. We compare the thermal stability of barriers in ion-implanted LiNbO(3) and LiTaO(3) waveguides by annealing at different temperatures. The results show that the barrier in a LiTaO(3) planar waveguide has higher thermal stability than that in a LiNbO(3) waveguide. The experiments also show that annealing at a temperature higher than 400 degrees C results in recrystallization of the barrier.     

Design methodology of refractive index engineering by implantation of high-energy particles in electro-optic materials

Slab waveguides were constructed in K(1-x)Li(x)Ta(1-y)Nb(y)O(3) crystals by the implantation of (12)C(+4) ions at 30 MeV and (16)O(+5) ions at 30 and 40 MeV. The waveguides were characterized by a prism coupler setup. A refractive index drop of 10.9% was observed in a layer formed by the implantation of (16)O(+5) ions at 30 MeV. The carbon-implanted waveguides were found to be thermally stable after annealing at 450 degrees C. A semiempirical formula for predicting the change in the refractive index given the parameters of the implantation process was developed. It is argued that the combination of the basic implantation process with the semiempirical formula can be developed to become a generic method for constructing complex electro-optic circuits with a wave-guided architecture.     

Optical properties of Er-doped SiO2-GeO2-Al2O3 planar waveguide fabricated by sol–gel processes

In this paper, we report silica based planar waveguides doped with Er³⁺, and co-doped with GeO₂ and Al₂O₃. These sol–gel derived planar waveguides were fabricated on SOS (silica on silicon) using multiple spin-coating and rapid thermal processing (RTP). Investigation has been made on their characteristics in terms of their application in optical amplification and lasing, including photoluminescence (PL), fluorescence lifetime, refractive index, propagation loss, surface roughness, Fourier transform infrared (FTIR) spectrum and X-ray diffraction (XRD) analysis. The propagation loss of a 20-layer planar waveguide was measured to be about 1.6 dB/cm for TE₀ and 2.2 dB/cm for TM₀ mode. A strong emission transition (⁴I_13/2→⁴I_15/2) at 1.536 μm with a lifetime of 3.6 ms has been obtained for an optimized molar composition of 90SiO₂: 10GeO₂: 20AlO_1.5: 1ErO_1.5.     

Mode-independent attenuation in evanescent-field sensors

Generally, the total power attenuation in multimode evanescent-field sensor waveguides is nonproportional to the bulk absorbance because the modal attenuation constants differ. Hence a direct measurement is difficult and is additionally aggravated because the waveguide absorbance is highly sensitive to the specific launching conditions at the waveguide input. A general asymptotic formula for the modal power attenuation in strongly asymmetric inhomogeneous planar waveguides with arbitrarily distributed weak absorption in the low-index superstrate is derived. Explicit expressions for typical refractive-index profiles are given. Except when very close to the cutoff, the predicted asymptotic attenuation behavior agrees well with exact calculations. The ratio of TM versus TE absorption has been derived to be (2 - n(0)(2)/n(f)(2)) for arbitrary profiles. Waveguides with a linear refractive-index profile show mode-independent attenuation coefficients within each polarization. Further, the asymptotic sensitivity is independent of the wavelength, so that it should be possible to directly measure the spectral variation of the bulk absorption. The mode independence of the attenuation has been verified experimentally for a second-order polynomial profile, which is close to a linear refractive-index distribution. In contrast, the attenuation in the step-profile waveguide has been found to depend strongly on the mode number, as predicted by theory. A strong spread of the modal attenuation coefficients is also predicted for the parabolic-profile waveguide sensor.     

紫脲酸铵分光光度法测定复盐法水氯镁石脱水产品中氧化镁

对于水氯镁石的复盐(C6H5NH2·HCl·MgCl2·6H2O)法脱水产品中微量MgO含量的测定,采用了直接测定样品水溶残渣中镁含量而得MgO含量的方法代替传统的间接法,获得了更准确的结果。用紫脲酸铵分光光度法测定了水溶残渣用稀H2SO4溶解后溶液中微量镁,研究了金属镁离子与显色剂的络合比、溶液酸度、显色时间对显色的影响,以及盐酸苯胺阳离子、Fe3+、Zn2+、Ba2+、Ca2+、Ni2+、Co2+等离子对显色的干扰及其消除。并采用修正法消除了显色后残余显色剂对测定镁的影响。结果表明,在镁离子浓度0~2mmol/L范围内,修正吸光度与镁离子浓度呈线性关系,摩尔吸光系数为2.45×102 L/(mol·cm)。加标镁离子的测定结果证明该法具有较高的精密度和准确度（加标回收率近100%）,适合于水氯镁石脱水产品中总MgO含量的准确测定。     

Planar optical waveguides formed in β-BBO by MeV O+ implantation

The planar waveguides have been fabricated in z-cut β-BaB₂O₄ crystal by 2.8 MeV O⁺ ion implantation with the doses of 8 × 10¹⁴ and 2 × 10¹⁵ ions/cm² at room temperature. The waveguides were characterized by the prism-coupling method. The dark modes are measured before and after the annealing at 300°C for 20 and 40 min in air. The refractive index profile is reconstructed using the reflectivity calculation method. It is found that relatively large positive changes of extraordinary refractive indices happen in the guiding regions, and a slight change increases with the doses, which are different from most of the observed ion-implanted waveguides.     

Single-crystal Y2O3-ZrO2 rectangular waveguides for ultrahigh-temperature sensing applications

High-quality Y2O3-ZrO2 single-crystal rectangular waveguides have been developed for ultrahigh-temperature sensing applications. Five waveguides, 0.55-1.12 mm wide and 52-65 mm long, were fabricated from a bulky cubic 21.2-mol. % Y2O3 stabilized ZrO2 single crystal that had been precisely cut and finely polished. At 900-nm wavelength, the average optical loss of these waveguides is approximately 0.016 dB/cm, which is much lower than that of Y2O3-ZrO2 single-crystal optical fibers grown by the laser-heated pedestal growth method. The tested waveguides survived a temperature higher than 2,300 degrees C, and their mechanical strength and chemical resistance were also acceptable. Experimental results show that these waveguides are promising for ultrahigh-temperature sensing applications.     

Synthesis of symmetric and asymmetric planar optical waveguides

A novel and accurate refractive index profile synthesis method for planar optical waveguides is presented and demonstrated using the transmitted near-electric-field-data. This method is based on the inverse transmission-line (TL) technique. From Maxwell's equations, a TL equivalent circuit (electric T-circuit) for the refractive index profile of a planar optical waveguide is derived. The authors demonstrate how to use this model to carry out the inverse problem and synthesise the exact refractive index profile numerically from near-field-data. The TL method can reconstruct arbitrary refractive index profiles for planar optical waveguides that support singlemode or multi- modes. The cases of both symmetric and asymmetric arbitrary refractive index profile planar waveguides are discussed. The accuracy of the reconstructed waveguides is examined numerically.     

P2O3-B2O3-Al2O3-SrO-BaO玻璃中Yb3+非辐射能量转移下Er3+离子的增强发射

本文研究了共掺Er3 +/Yb3 +P2 O3 -B2 O3 -Al2 O3 -SrO -BaO玻璃的能量转移过程。实验中制备了高掺杂Yb3 +离子的双掺Er3 +/Yb3 +的磷酸盐玻璃样品。在Er3 +/Yb3 +掺杂比率 >1 :1 8(mol% )时 ,观测到了基于Yb3 +离子至Er3 +离子能量转移下Er3 +( 4 I13 / 2 →4I15 / 2 )的增强发射和Yb3 +( 2 F7/ 2 →2 F5 / 2 )发射的减弱 ,当Yb3 +离子掺杂浓度超过 2 .1× 1 0 2 1ions/cm3 时 (Er3 +/Yb3 +≤ 1 :1 8,mol% ) ,由于Yb3 +离子的自淬灭效应 ,Er3 +离子的发射强度降低。实验中得到了Yb3 +离子的最佳掺杂浓度为1 .74× 1 0 2 1ions/cm3