共查询到20条相似文献,搜索用时 193 毫秒
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V. V. Antipov V. P. Dorofeev A. A. Malkov A. A. Malygin S. V. Mikhailovsky E. A. Sosnov 《Glass Physics and Chemistry》2008,34(5):534-542
The influence of the temperature on the preparation of tin oxide nanolayers on the surface of the C 52-1 borosilicate glass by the molecular layering method is investigated. Changes in the surface conductivity and the surface morphology of the glass modified by tin oxide nanolayers are analyzed as a function of the thickness of the coating and the synthesis temperature. 相似文献
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《Diamond and Related Materials》2001,10(3-7):281-288
Recent achievements in homoepitaxial CVD diamond films for electronic devices have been discussed. We have successfully synthesized high-quality homoepitaxial diamond films with atomically flat surface by the microwave plasma chemical vapor deposition (CVD) using a low CH4 concentration of CH4/H2 gas system less than 0.15% CH4/H2 ratio and Ib (001) substrates with low-misorientation angle less than 1.5°. These films are atomically flat over an area as large as 4×4 mm2 and have shown a strong excitonic emission of 5.27 eV line, even at room temperature, with no essential emission lines in the visible light region in the cathodoluminescence (CL) spectra. Furthermore, high-quality Schottky junctions between Al and P type high-conductivity layers near the surface of these films have been obtained. Based on this growth method, we have also successfully synthesized B-doped diamond films using trimethylboron [B(CH3)3,TMB] gas as a B-doping source, whose Hall mobility is 1840 cm2/Vs at 290 K. Schottky junction fabricated by the B-doped diamond also shows excellent performances, indicating that the homoepitaxial diamond films presented here have a high potentiality for electronic devices. 相似文献
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《Journal of Adhesion Science and Technology》2013,27(10):1299-1320
Unsized glass fibers and planar glass substrates were subjected to low temperature plasma or wet-chemical process to modify the fiber or substrate surface and thus influence the interphase properties of the glass/polyester system. Plasma-polymerized thin films (interlayers) of organosilicon monomers (hexamethyldisiloxane and vinyltriethoxysilane) were deposited in an RF helical coupling plasma system on the glass surface. Commercial silane coupling agent (vinyltriethoxysilane) was coated onto an unmodified glass surface from an aqueous solution. Bonding at the glass/interlayer interface was analyzed by employing a micro-scratch tester together with an optical polarizing microscope for the planar samples. The results revealed that the adhesion bonding could be controlled by plasma process parameters. Scanning electron and atomic force microscopies enabled characterization of the film surface morphology. Chemical composition and chemical structure of prepared interlayers were characterized using X-ray photoelectron and infrared spectroscopies. Microcomposites (macrocomposites) were tested to evaluate the interfacial shear strength (short-beam strength) of the glass fiber/polyester interphase using the microbond test (short-beam shear). Our study indicated that the most efficient interphase could be prepared by plasma polymerization or wet-chemical process using the vinyltriethoxysilane monomer. The short-beam strength was 110% higher than that for untreated fibers in both cases. 相似文献
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《Journal of the European Ceramic Society》2006,26(4-5):605-611
Thin film growth of complex oxides including BaTiO3, SrTiO3, BaZrO3, SrZrO3, KTaO3, and KNbO3 were studied by the hydrothermal and the hydrothermal–electrochemical methods. Hydrothermal–electrochemical growth of ATiO3 (A = Ba, Sr) thin films was investigated at temperatures from 100 to 200 °C using a three-electrode cell. Current efficiency for the film growth was in the range from ca. 0.6 to 3.0%. Tracer experiments revealed that the ATiO3 film grows at the film/substrate interface. Thin films of AZrO3 (A = Ba, Sr) were also prepared on Zr metal substrates by the hydrothermal–electrochemical method. By applying a potential above ca. +2 V versus Ag/AgCl to the Zr substrates, AZrO3 thin films were formed uniformly. Thin films of KTaO3 and KNbO3 were prepared on Ta metal substrates by the hydrothermal method. Perovskite-type KTaO3 thin films were formed in 2.0 M KOH at 300 °C. Pyrochlore-type K2Ta2O6 thin films were formed at lower temperatures and lower KOH concentrations. 相似文献
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2001年3月,公司平拉生产线玻璃板面时常出现气泡、波筋、结石等缺陷.根据以往的经验和对具体情况的分析,认为这类缺陷产生的主要原因是配合料熔化不良所致,据此进行了深入的探索和全面的改进措施,取得了较为满意的效果.现将其改造过程作一介绍,供同行们参考. 相似文献
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The influence of dissolved oxygen on titanium oxide film growth at various sweep rates was explored for both pure titanium and a titanium alloy. The results showed that the dissolved oxygen becomes only significant when the sweep rate is sufficiently low, but which can be neglected in the case of enough high sweep rates. It reasonably assumes that there is no adequate time for oxygen to move to the anodic surface when the sweep rate is sufficiently high so that the role of oxygen becomes insignificant. However, the situation was found to be different when the anodic oxide film was growing at a sufficiently low sweep rate dynamically. This is because the reduction of dissolved oxygen in the solution occurs and produces an additional current, which opposes the oxide growth current produced by adsorption and subsequent charge reaction. 相似文献
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电子玻璃布(简称玻璃布)是覆铜板的主要原材料之一,随着电子技术的发展,对玻璃布的外观要求越来越高,玻璃布的细微疵点都可能会造成线路板的缺陷,所以提高玻璃布的质量是刻不容缓。 相似文献
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Miguel H. Boratto Mirko Congiu Stevan B.O. dos Santos Luis V.A. Scalvi 《Ceramics International》2018,44(9):10790-10796
A study of zirconium oxide (ZrO2) thin films obtained by the non-alkoxide sol-gel method at different annealing temperatures, up to 450?°C, is presented. Morphological, compositional, and optical characterizations of zirconia thin films show high transparency and high bandgap, besides homogeneous and non-porous surface. Metal-insulating-metal (MIM) devices were assembled from this zirconia material for electrical characterizations and have shown high electric resistivity and high specific capacitance. A study of the thin film composition shows residues of S and Cl elements from the precursor solution that contributes for reduction of the dielectric constant of the zirconia thin films, even though they still present higher values when compared to SiO2, which is a positive alternative to replace this oxide in electronic devices. A parallel study of MIM assembled on polymeric substrate and annealed at 100?°C also leads to positive results concerning high electrical insulating and capacitance. This study aims the understanding of the relations between annealing temperature and impurities found in sol-gel based thin films, as well as their relations to dielectric characteristics of zirconia thin films that impact the final properties of electronic devices, such as in field effect transistors. 相似文献
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《国际智能与纳米材料杂志》2013,4(3):201-223
Successful isolation of single-layer graphene, the two-dimensional allotrope of carbon from graphite, has fuelled a lot of interest in exploring the feasibility of using it for fabrication of various electronic devices, particularly because of its exceptional electronic properties. Graphene is poised to save Moore's law by acting as a successor of silicon-based electronics. This article reviews the success story of this allotrope with a focus on the structure, properties and preparation of graphene as well as its various device applications. 相似文献
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V. I. Kondrashov T. V. Kaplina T. Ya Reiter V. I. Shelikhova 《Glass and Ceramics》1999,56(7-8):204-206
A method for active protection of the float glass surface from leaching based on spraying an aqueous phosphate solution on the surface of the moving glass band in the temperature interval of 120 – 560°C is considered. The coating provides for additional chemical modification of the glass surface and extends its storage period. Translated from Steklo i Keramika, No. 7, pp. 8–10, July, 1999. 相似文献
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The products of frontal combustion of Fe2O3/TiO2/Al thermite composite powder mixtures with various component ratios are studied. Differences in the composition of the combustion
products are discussed. A probable mechanism of their formation is proposed. Practical uses of the results are considered.
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Translated from Fizika Goreniya i Vzryva, Vol. 43, No. 6, pp. 61–68, November–December, 2007. 相似文献