Radiation damage of Ge-on-Si devices

The radiation damage induced by 2-MeV electrons and 70-MeV protons in p⁺n diodes and p-channel MOS transistors, fabricated in epitaxial Ge-on-Si substrates is reported for the first time. For irradiation above 5×10¹⁵ e/cm², it is noted that both the reverse and forward current increase, and that the forward current is lower after irradiation for a forward voltage larger than about 0.5 V. The reason for this might be an increased resistivity of the Ge-on-Si substrate. For p-MOSFETs, for a 1×10¹⁶ e/cm² dose, a slight negative shift of the threshold voltage and a decrease of the drain current for input and output characteristics have been observed. In addition, g_m decreases after irradiation. The degradation of the transistor performance is thought to be due to irradiation-induced positive charges in the high-κ gate dielectric. The induced lattice defects are also mainly responsible for the leakage current increase of the irradiated diodes.     

Walk-out phenomena in 6H-SiC mesa diodes with SiO2/Si3N4 passivation and charge trapping in dry and wet oxides on N-type 6H-SiC

The drift or “walk-out” of the breakdown voltage in 6H-SiC mesa diodes passivated by a double layer of 1000 Å SiO₂ and 3000 Å Si₃N₄ was studied and related to the charge trapping in the oxide. The first-order trapping kinetics using four distinct electron traps with trapping cross-sections in the range 10⁻¹⁶ to 10⁻¹⁹ cm² were found to best describe the breakdown voltage drift curves. The wet oxide trapping cross-sections are 2 to 10 times larger compared to the dry oxide ones, resulting in about one order of magnitude faster charging of the traps. No significant differences in the amount of drift and saturation level of breakdown voltage were found between the different passivations. The influence of UV illumination, supplied by a HeCd laser with wavelength 325 nm, on the walk-out characteristics and on the reverse current was also investigated. The build-up of the surface states was observed in wet oxide under UV illumination and DC stress. The results are consistent with the coexistence of large concentrations of positive charge and acceptor type deep interface electron traps. The walk-out is a result of the acceptor states being filled by hot electrons supplied by the mechanism of avalanche injection. The suitability of the walk-out measurements as a tool for characterisation of the charge trapping properties of the passivation is demonstrated.     

Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation

The d.c. characteristics of InGaAs/InP single heterojunction bipolar transistors (SHBTs) were studied for the first time under high energy (1 MeV) electron radiation of cumulative dose up to 5.4×10¹⁵ electrons/cm². No degradation was observed for electron doses below 10¹⁵/cm². For electron doses greater than 10¹⁵/cm² the following degradation effects were observed: (1) decrease in collector current; (2) decrease in current gain up to 50%; (3) an increase in collector saturation voltage by 0.2–0.8 V depending on base current; and (4) increase in output conductance. The degradation of collector current and current gain are thought to be due to increased recombination caused by radiation-induced defects in the base–emitter junction. The increase in collector saturation voltage is attributed to an increase in emitter contact resistance after irradiation. The increase in the avalanche multiplication in the reverse biased base–collector junction caused by radiation induced defects is believed to be responsible for increased output conductance after irradiation.     

激光结构光测量连续调节智能光源控制器设计

激光结构光视觉测量过程中被测物体的表面材质差异、表面几何曲率大小均会影响到实际采集的激光光斑图像质量,从而影响到测量数据处理的精确度和准确性。为了适应工业测量中多变的被测对象特性和使用环境,对结构光源的激光二极管进行电流控制。在分析mW级别小功率激光二极管工作特性的基础上,提出了一种使用上位机和ARM微控制器的微小功率半导体激光器智能控制器的低成本设计方案。研究了数字PWM信号驱动激光二极管的技术,使用ARM微控制器生成PWM信号输出,然后PWM数字信号通过光电隔离的阻容滤波电路、运放电压跟随、调理电路以及压控恒流源电路(V-I)驱动半导体激光二极管的电流大小。激光控制器的PWM信号的占空比、基准频率通过上位机串行Modbus协议通讯进行快速设定。系统经过激光结构光投影成像实验进行验证,适时调整激光结构光输出强度大小,可优化激光视觉测量系统的测量输出和适应性。通过实验验证的结果表明,系统可以稳定运行。     

标准测试条件下人造太阳光源的谱失配及影响

标准测试条件下,人造太阳光源的光谱形式、辐 照强度、光谱失配因子等是影响太 阳电池器件测试结果准确性的重要因素。本文以标准太阳光谱AM1.5 为参考,从光谱失配角 度,计算和分析了4种常用人造太阳光源(Arc lamp灯、Q-Flash灯、Q-Flash W灯和ELH 灯)与标准太阳光谱AM1.5之间的光谱失配因子的变化和这四种人造 太阳光源辐照下晶硅电 池的输出参数的变化。计算结果表明:Arc lamp型人造太阳光源的光谱失配因子为 0.979, 晶硅电池输出参数最接近标准太阳光谱AM1.5辐照下的输出参数 ;因光谱失配影响,4种不同人造太阳光源辐照下晶硅电池的输出参数较标准太阳光谱AM1.5辐照下的输出 参数会发生明显变化。     

The stability of the CuInSe2 solar mini-module I–V characteristics under continuous and light/dark irradiation cycle tests

The stability of a CIS solar mini-module during a light/dark cycle and continuous light irradiation was investigated. Under both test conditions, the maximum power was improved during the early stages, then subsequently deteriorated. The major factors causing this phenomenon were changes in the fill-factor and open circuit voltage. The details of some parameters relevant to these factors are considered herein. In addition, the dependencies of light intensity and temperature in terms of the I–V characteristics were measured.     

Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage

The paper presents results of study of threshold voltage (V_T) degradation in CMOS transistors damaged by high-field charging. Fowler-Nordheim stress induced V_T degradation in devices with latent charging damage due to plasma processing was found to be strongly dependent on device type and diagnostic stress conditions. “Direct” and “reverse” antenna effect for NMOS, and anomalous behavior of PMOS devices are explained with polarity dependent trapping and the model includes generation of hole traps, an effect not considered previously.     

Silicon light emitting device in CMOS technology

A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.     

Charge storage by irradiation with UV light in non-biased MNOS structures

Charge storage in non-biased MNOS (Metal-Nitride-Oxide-Semiconductor) structures effected by irradiation with UV light has been investigated. The electrons generated by internal photoemission at the Si surface are trapped at the SiO₂Si₃N₄-interface and inside the Si₃N₄. The resulting charge storage in the insulator can be determined by capacitance technique. The observed positive voltage shift in C-V-characteristics depends on photon energy as well as on radiant exposure. The charge storage occurs in three stpes which can be related to various types of traps. The charged structure can partially be discharged by irradiation with light of less energy than needed for the storage process.     

薄膜AlGaInP发光二极管中不同反光镜的研究

本文计算了GaP/Au 反光镜, GaP/SiO2/Au 三层ODR and GaP/ITO/Au 三层ODR的反射率随角度的变化值。制作了GaAs衬底的AlGaInP LED,Au反光镜、SiO2 ODR和ITO ODR的薄膜AlGaInP LED。在20mA下,四种样品光输出功率分别为1.04mW, 1.14mW, 2.53mW and 2.15mW。制作工艺退火后,Au扩散使Au/GaP反光镜的反射率降至9％。1/4波长的ITO和SiO2透射率不同造成了两种薄膜LED光输出功率不同。ITO ODR中加入Zn可以大大降低LED的电压,但并不影响LED的光输出。     

Behavior of Cu(In,Ga)Se2 solar cells under light/damp heat over time

We performed accelerated tests on various sealed CIGS solar cells in a complex light/damp heat environment, and investigated the behavior of P_max and other properties over time. The half-life time of P_max in well-sealed cells was found to be 40–80 times greater than that in non-sealed cells, and the degradation of P_max was dependent on changes in V_oc and FF. The cause of these changes was examined based on the behavior of photo IV characteristics under conditions of feeble light, dark IV, and CV.     

Reversing Immunosuppression in Hypoxic and Immune-Cold Tumors with Ultrathin Oxygen Self-Supplementing Polymer Nanosheets under Near Infrared Light Irradiation

Solid tumors are characterized by a hypoxic and immunologically “cold” microenvironment that dramatically limits the therapeutic outcomes of immunotherapy. Thus, strategies and materials that are capable of reversing immunosuppression in immune-cold tumors are highly desired. Herein, it is reported that oxygen (O₂) self-supplementing conjugated microporous polymer nanosheets can be utilized to elicit a robust antitumor T cell immune response in the hypoxic and immunosuppressive tumor microenvironment. The ultrathin nanosheets can generate O₂ through the water splitting reaction and produce massive reactive oxygen species (ROS) under near infrared light irradiation. Meanwhile, the unique photothermal property of the conjugated polymer nanosheets generates hyperthermia under irradiation. Consequently, they are able to maximize the immunogenic cell death (ICD) performance by inducing adequate damage-related molecular patterns in hypoxic tumors. Other than fostering T cell infiltration by the elicited ICD, the loaded indoleamine 2,3-dioxygenase in nanosheets can reverse the immunosuppression and empower ICD effect for efficient T cells priming. In vivo experiments conclusively prove that the designed polymer nanosheets exhibit great potential for tumor eradication, metastasis prevention, as well as long-term survival. Such a photocatalytic platform opens up new paths for reversing immunosuppression in immune-cold tumors and broadens the application of polymer-based nanosheets for cancer therapy.     

Interface instabilities in polymer light emitting diodes due to annealing

In polymer light emitting diodes (PLEDS) with an (ITO/PPV/Ca) structure we observed a significant reduction of both the current and the light output at constant voltage after heat treatment for only 30 min at 65 °C. Electroluminescence spectroscopy experiments showed that the shape as well as the amplitude of the spectra were changed.The reduction of current and light output was investigated by measuring I–V and E–V (current–voltage and brightness–voltage) characteristics of PLEDs, I–V characteristics of single carrier devices, and by performing low energy ion scattering and X-ray photoelectron spectroscopy experiments on the Ca/PPV interface.It was concluded that the current and light output reduction could be ascribed to the degradation of the Ca/PPV and the ITO/PPV interfaces. The degradation of the ITO/PPV interface resulted in a reduction of the zero field hole mobility and a small increase of the field dependence of the mobility. The degradation of the Ca/PPV interface, probably by diffusion of calcium into the PPV, resulted in carrier traps and quenching sites, which influenced the field dependent electron mobility.     

The effects of gamma irradiation on low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures

The effects of gamma irradiation on as-deposited, oxygen-annealed, and dual-dielectric gate (undoped polysilicon/oxide) low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide (SiO₂) metal-oxide-silicon (MOS) structures were investigated. As-deposited LPCVD SiO₂ MOS structures exhibit the largest shift in flatband voltage with gamma irradiation. This is most likely due to the large number of bulk oxide traps resulting from the nonstochiometric nature of as-deposited LPCVD SiO₂. Dual-dielectric (undoped polysilicon/annealed LPCVD SiO₂) MOS structures exhibit the smallest shift in flatband voltage and increase in interface state density compared to as-deposited and oxygen-annealed LPCVD SiO₂ MOS structures. The interface state density of dual-dielectric MOS structures increases from 5 × 10¹⁰ eV cm⁻² to 2–3 × 10¹¹ eV cm⁻² after irradiation to a gamma total dose level of 1 Mrads(Si). This result suggests that the recombination of atomic hydrogen atoms with silicon dangling bonds, either along grain boundaries or in crystallites of the undoped polysilicon layer in dual-dielectric (undoped polysilicon/annealed LPCVD SiO₂) MOS structures, probably reduces the number of atomic hydrogen atoms reaching the Si/SiO₂ interface to generate interface states.     

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

A resistive switching random access memory (RRAM) with an HfO₂/Ti structure grown on a molybdenum (MO) substrate was fabricated, and a gold (Au) conductive atomic force microscopy (CAFM) tip was used as the top electrode such that the cell area of the resulting RRAM device is as small as 3 × 10⁻¹² cm². The pre- and post-irradiated resistive switching behaviors of the RRAM device with various HfO₂ layer thicknesses were investigated after being subjected to Co⁶⁰ γ-ray irradiation with different radiation doses. It is found that the forming voltage (V_forming), set voltage (V_set), resistance of high resistance state (RHRS) and resistance of low resistance state (RLRS) of the RRAM device are all radiation dose-dependent. The V_forming, V_set, RHRS and RLRS all decrease as the radiation dose increases due to increasing radiation-induced oxygen vacancies or defects inside the HfO₂ layer. Our experimental results indicate that the HfO₂-based RRAM cell with an extremely small cell area is not actually radiation hard since the operating voltage will change with V_forming and V_set after irradiation.     

Reliability characteristics of high-k dielectrics

In this paper, recent results of Weibull slopes, area scaling factors, and breakdown behaviors observed for both soft breakdown and hard breakdown are discussed. These results would help to shed light on the breakdown mechanism of HfO₂ gate dielectrics. The Weibull slope β of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be β=2, whereas that of the soft breakdown was about 1.4 (EOT=14 Å). We also integrated the time-to-breakdown characteristics of HfO₂ under unipolar AC voltage stress on MOS capacitors. The results show that longer lifetime of HfO₂ has been observed when compared to constant voltage stress. Higher frequency and lower duty cycle in the AC stress resulted in longer lifetime. As thickness decreases, the amount of lifetime enhancement decreases. The enhancement of unipolar t_BD is attributed to less charge trapping during the “on time”, t_on and charge detrapping during the off time, t_off. It is proposed that time (τ_in) for charge to be trapped in HfO₂ is longer than t_on of unipolar stress under high frequency. In addition to experimental results, possible solutions are discussed.     

光强和温度对多结太阳电池的影响研究

基于模拟太阳光源的方法,在室内研究了在不同光照强度、不同工作温度下GaAs多结太阳电池的输出特性.通过实验得出:随着光源辐照强度的增加,太阳电池的特性参数:短路电流Isc线性增加,开路电压Voc对数增加,最大输出功率P线性增加,光电转换效率η随聚光比增加到一定程度后减小.对比分析了光强和温度对电池输出特性的影响,数据结...     

铌酸锂双面金属包覆波导电压传感特性

设计了一种利用铌酸锂作为波导基片的双面金属包覆平板光波导,利用波导中超高阶导模高敏感特性制成了一种反射型光学电压传感器。入射激光束采用小角度入射,当光波导处于导模共振状态时,选择一个恰当的工作点,再通过两金属电极对该器件施加直流电压,通过检测反射光强,获得相应的电压值变化。实验测量中所用的电压范围是-800～800V, 得到的线性度值为0.995,波导反射光的反射率变化灵敏度为0.2V-1,实验表明这种电压传感器具有较好的线性和灵敏度,该新型电压传感器具有结构与制作简单、调节方便和成本低廉等优点。     

Electron bombardment effect on the reverse I–V characteristics and tensosensibility of p+-nGaAs diodes

The effect of ≈2 MeV electron bombardment on the reverse characteristics and tensoelectric properties in p⁺-nGaAs diodes is investigated. The reverse breakdown voltage showed a weak increase due to irradiation and an anomalous temperature dependence in the range 77–300 K. The I–V characteristics in electron-irradiated diodes revealed a high pressure sensitivity (tensosensibility) to the external hydrostatic pressure (up to 6 · 10⁸ Pa). The peculiarities in the reverse I–V characteristics of diodes investigated point to the presence of a radiation-induced deep trap (acceptor-type level at about E₀ ? 0.3 + 0.4 eV), which is attached to the Γ₁₅^V-maximum of the valence band.     

Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness

The light output and electrical characteristics of GaN-based vertical light emitting diodes were investigated as a function of n-GaN thickness. The forward voltage increases from 3.34 to 3.42 V at an injection current of 350 mA as the n-GaN thickness decreases from 5.0 to 2.0 μm. Even at a high injection current of 2.0 A, LEDs with 2.0 μm-thick n-GaN reveal stable forward characteristics which are comparable to those of LEDs with 5.0 μm-thick n-GaN. All the samples exhibit almost the same reverse current up to approximately −8 V. The output power increases with decreasing n-GaN layer thickness. For example, LEDs with 2.0 μm-thick n-GaN yield about 12% higher light output power as compared to LEDs with 5.0 μm-thick n-GaN. Their light output power continuously increases without saturation as the injection current increases up to 1 A. The n-GaN thickness dependence of the electrical characteristics is described and discussed.