共查询到17条相似文献,搜索用时 187 毫秒
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用注氧隔离法在单晶硅衬底中形成SiO2隔离层,制备成SOI(SiliconOnInsulator)衬底,用快速化学汽相沉积(RTCVD)法在此衬底上制备硅薄膜,热扩散形成PN结,制备成薄膜太阳电池,电池表面钝化及减反膜采用的是等离子增强化学气相沉积(PECVD)方法制备的SiN,薄膜电池的电极全部由正面引出,制成的23μm厚薄膜电池的光电转换效率为8 12%(1×1cm2,AM1 5,23℃)。扩展电阻的测量表明电池有良好的PN结特性;量子效率测量表明SiN比常规的热氧化SiO2有更好的减反射和钝化作用;电池的暗特性表明电池具有较高的串联电阻,并分析了正面引电极对串联电阻的影响。 相似文献
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H. Morikawa Y. Nishimoto H. Naomoto Y. Kawama A. Takami S. Arimoto T. Ishihara K. Namba 《Solar Energy Materials & Solar Cells》1998,53(1-2)
High efficient large area thin film polycrystalline Si solar cell based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. Fabrication process of the via-hole etching for the separation of thin films (VEST) is newly developed. It is found that phosphorus treatment and back surface field (BSF) are quite effective for the VEST structure and the ZMR thin film polycrystalline silicon. The conversion efficiency as high as 16.0% for a practical size (10 cm×10 cm) is achieved. This is the highest for large area thin film polycrystalline Si solar cells ever reported. 相似文献
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H. Naomoto S. Hamamoto A. Takami S. Arimoto T. Ishihara 《Solar Energy Materials & Solar Cells》1997,48(1-4)
We have studied the characterization of thin-film silicon formed by high-speed zone-melting recrystallization (ZMR) process. The dependence of crystal quality and solidification-front morphologies on scanning speed of melting heater was investigated by in situ observation of the molten-zone. It is found that solidification-front morphologies become unstable with quickening scanning speed and defect density increased extremely for a relatively thick poly-Si layer. On the contrary, by thinning the poly-Si layer, the solidification-front morphologies were kept stable at even higher scanning speeds and defect density was also kept low. In such ZMR films with low defect density, however, there are two types of subboundaries with and without branches. Furthermore, solar cells with simple structures were fabricated to evaluate the crystal quality of ZMR films. Charateristics of solar cells were strongly affected by the crystal quality of ZMR-Si films. Thus, it was clarified that stable solidification-front morphologies obtained by thinning the poly-Si layer and subboundaries without branches are suitable to obtain a highquality active layer. Consequently, the crystal quality of ZMR-Si films formed by high-speed ZMR process for a relatively thin poly-Si layer of 0.5 μm thickness and high scanning speed of 3.0 mm/s is comparable to that formed at a low scanning speed of 0.1 mm/s. 相似文献
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T. Kunz V. GazuzM.T. Hessmann N. GawehnsI. Burkert C.J. Brabec 《Solar Energy Materials & Solar Cells》2011,95(8):2454-2458
Crystalline silicon thin-film solar cells were fabricated on graphite substrates. A laser ablation process was developed for edge isolation of the thin-film cells. The shunt resistance was comparable to otherwise identical cells isolated by plasma etching, while the reproducibility of the laser isolation process was higher. The solar cells were characterized by current-voltage and light beam induced current measurements (LBiC). No interference was detected along the ablated edges. Spatial variations of the minority carrier lifetime are attributed to the grain structure of the seeding layer obtained by the zone melting recrystallization (ZMR). 相似文献
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S. Arimoto H. Morikawa M. Deguchi Y. Kawama Y. Matsuno T. Ishihara H. Kumabe T. Murotani 《Solar Energy Materials & Solar Cells》1994,34(1-4)
High-efficient operation of a large-area thin film polycrystalline Si solar cell with a novel structure based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. The (100) crystal orientation area over 90% has successfully been obtained by controlling the ZMR conditions, which allowed to form a uniform random pyramidal structure at the cell surface. The effect of hydrogen passivation has also been investigated for further improvement of the cell characteristics. By employing a light trapping structure (textured surface) and hydrogen passivation, an efficiency of 14.22% was obtained for a practical 100 cm2 size. 相似文献
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Solar cells based on polycrystalline semiconductor thin films have great potential for decreasing the cost of photovoltaic energy. However, this kind of solar cells has characteristics very different from those fabricated on crystalline silicon for which the carrier-transport and behavior is clearly known. Instead, for hetero-junction solar cells made on less known polycrystalline materials the design is almost empirical. In this work, several physical aspects related to the behavior of polycrystalline thin film solar cells will be discussed, and some considerations for an adequate design of this kind of solar cells will be made. For example, the recombination at the grain boundaries and its influence on the short circuit current as a function of the crystallite sizes on the active material is considered. Based on this, the appropriate thickness of each layer and their resistivity will be discussed. As an example, these considerations will be applied to CdS/CdTe heterojunction solar cells, taking into account typical properties of CdTe thin films used for solar cells. 相似文献
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Oliver Nast Stephan Brehme Stephen Pritchard Armin G. Aberle Stuart R. Wenham 《Solar Energy Materials & Solar Cells》2001,65(1-4)
Aluminium-induced crystallisation of amorphous silicon is studied for the formation of continuous polycrystalline silicon thin-films on low-temperature glass substrates. It is shown to be a promising alternative to laser crystallisation and solid-phase crystallisation. Silicon grain sizes of larger than 10 μm are achieved at temperatures of around 475°C within annealing times as short as 1 h. The Al doping concentration of the poly-Si films depends on the annealing temperature, as revealed by Hall effect measurements. A poly-Si/Al/glass structure presented here can serve as a seeding layer for the epitaxial growth of polycrystalline silicon thin-film solar cells, or possibly as the base material with the back contact incorporated. 相似文献