Thermodynamics of CuAlO2 and CuAl2O4 and Phase Equilibria in the System Cu2O-CuO-Al2O3

The standard Gibbs free energies of formation of CuAlO₂ and CuAl₂O₄ were determined in the range 700° to 1100°C, using emf measurements on the galvanic cells (1) Pt,CuO +] Cu₂O/CaO-ZrO₂/O₂,Pt; (2) Pt,Cu +] CuAlO₂+] Al₂O₃/CaO-ZrO₂/ Cu +] Cu₂O,Pt; and (3) Pt,CuAl₂O₄+] CuAlO₂+]Al₂O₃/CaO-ZrO₂/O₂,Pt. The results are compared with published information on the stability of these compounds. The entropy of transformation of CuO from tenorite to the rock-salt structure is evaluated from the present results and from earlier studies on the entropy of formation of spinels from oxides of the rock-salt and corundum structures. The temperatures corresponding to 3-phase equilibria in the system Cu₂O-CuO-Al₂O₃ at specified O₂ pressures calculated from the present results are discussed in reference to available phase diagrams.     

Solid-State Diffusive Amorphization in TiO2/ZrO2 Bilayers

Thin films of crystalline TiO₂ were deposited on self-assembled organic monolayers from aqueous TiCl₄ solutions at 80°C; partially crystalline ZrO₂ films were deposited on top of the TiO₂ layers from Zr(SO₄)₂ solutions at 70°C. In the absence of a ZrO₂ film, the TiO₂ films had the anatase structure and underwent grain coarsening on annealing at temperatures up to 800°C; in the absence of a TiO₂ film, the ZrO₂ films crystallized to the tetragonal polymorph at 500°C. However, the TiO₂ and ZrO₂ bilayers underwent solid-state diffusive amorphization at 500°C, and ZrTiO₄ crystallization could be observed only at temperatures of 550°C or higher. This result implies that metastable amorphous ZrTiO₄ is energetically favorable compared to two-phase mixtures of crystalline TiO₂ and ZrO₂, but that crystallization of ZrTiO₄ involves a high activation barrier.     

Orientation Relationships of Reactively Grown Ba6Ti17O40 and Ba2TiSi2O8 on BaTiO3 (001) Determined by X-ray Diffractometry

Fresnoite grows at 700° and 800°C, and Ba₆Ti₇O₄₀ grows at 1200°C with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured fresnoite is formed at higher temperatures. The SiO₂ films react with the BaTiO₃ crystals, forming the phases Ba₂TiSi₂O₈ (fresnoite) and Ba₆Ti₁₇O₄₀. At 700° and 800°C, both phases grow with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured polycrystalline phases are formed at higher temperatures.     

Role of Oxygen in Microstructure Development at Solid-State Diffusion-Bonded Cu/α-Al2O3 Interfaces

Microstructure development at solid-state diffusion-bonded Cu/α-Al₂O₃ interfaces has been studied using optical and electron microscopy. High-purity Cu foil was bonded between basal-oriented α-Al₂O₃ single-crystal plates at 1040°C for 24 h in a vacuum of ∼1.3 × 10⁻⁴ Pa (1 × 10⁻⁶ torr). Optical microscopy of as-bonded specimens revealed a large Cu grain size, fine pores, and long needles of Cu₂O at the interface. Bulk specimens were annealed at 1000°C for various times under controlled oxygen partial pressures in CO/CO₂ mixtures. Consistent with a thermochemical analysis, CuAlO₂ could be formed at the interfaces. The CuAlO₂ was acicular and discontinuous, but occurred in a uniform distribution over the bulk specimen interfaces.     

Prediction of a Critical Temperature for Aluminate Formation in Alumina/Copper–Oxygen Eutectic Bonding

A pseudobinary thermodynamic analysis of the alumina/copper–oxygen eutectic bonding process yields a value of approximately 1076°C for the invariant temperature of the {Cu( ss ), Cu( L1 ), CuAlO₂, Al₂O₃} equilibrium. This temperature, which is 11°C above the eutectic, corresponds to a critical temperature for stability of the copper aluminate CuAlO₂ in eutectic bonding. Implications for controlling interface microstructure are highlighted.     

Sol–Gel Synthesis of λ–Na2O·xAl2O3 Films

Na₂O· x Al₂O₃ ( x = 9, 11)films have been obtained by sol–gel method. Crystallization processes during heat treatments have been investigated by X–ray diffraction analysis. A metastable phase with the mullite structure, λ–Na₂O· x Al₂O₃, has been observed starting from 800°C. Films remained stable after a heat treatment at 1000°C for 250 h. Impedance spectroscopy measurements showed that the films of λ-Na₂O· x Al₂O₃ possess a large three–dimensional ionic conductivity at 400°C.     

Synthesis of Ba2NaNb5O15 Powders and Thin Films Using Metal Alkoxides

Transparent and highly oriented Ba₂NaNb₅O₁₅ (BNN) thin films have been prepared by using metal alkoxides. A homogeneous precursor solution was prepared by the controlled reaction of NaOC₂H₅, Nb(OC₂H₅)₅, and barium metal. The BNN precursor included a molecular-level mixture of NaNb(OC₂H₅)₆ and Ba[Nb(OC₂H₅)₆]₂ in ethanol. The alkoxy-derived powder crystallized to a low-temperature phase, and then transformed to orthorhombic BNN (tungsten bronze) at 600°C. BNN precursor films on substrates crystallized to orthorhombic BNN at 800°C via the low-temperature phase. Highly (002) oriented BNN films of tungsten bronze structure were successfully prepared on MgO (100) substrates at 700°C by using BNN underlayer.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Preparation of Ba2YCu3O7-δ Thin Films with Preferred Orientation through an Organometallic Route

Superconducting Ba₂YCu₃O_7-δ thin films were prepared through an organometallic route. Single-phase Ba₂YCu₃O_7-δ thin films with preferred orientation were successfully prepared on SrTiO₃ (100) single-crystal substrates at 800°C by a dip coating method using partially hydrolyzed Ba-Y-Cu organometallic solutions. Preferentially oriented Ba₂YCu₃-O_7-δ thin films were also prepared on MgO (100) substrates. By controlling the partial hydrolysis conditions, a coating solution for precursor thin films was kept accurately at the stoichiometric composition. The use of ozone gas during the pyrolysis of the precursor thin films was found to suppress the formation of BaCO₃. Ba₂YCu₃O_7-δ thin films with c -axis orientation perpendicular to a SrTiO₃ (100) substrate, which were heat-treated at 900°C for 15 min, exhibited a superconductivity transition with an onset of 90 K and an end of 75 K.     

Preparation of Titanium Nitride Films from Amide Precursors Synthesized by Electrolysis

A TiN precursor solution was synthesized by galvanostatic electrolysis of Ti metal and isopropylamine at a current density of 50 mA·cm⁻² at room temperature. TiN films were prepared by dip-coating of the precursor solution on a Si wafer, followed by two-stage heat treatment at 400°C and a fixed temperature of 800–1200°C in flowing N₂, N₂/NH₃, or NH₃ gas. The TiN films were characterized by XRD, chemical analysis, XPS, and electrical resistivity measurements. The TiN films were composed of uniform grains 20 to 200 nm in size with thicknesses ranging from 300 to 400 nm at temperatures of 800–1200°C. The effect of the heat treatment atmosphere (N₂ and NH₃) on the impurity content, crystallinity, particle size, and electrical resistivity is discussed.     

Preparation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films Via a Polyvinylpyrrolidone-Assisted Aqueous Sol–Gel Process and Dielectric Properties

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) thin films were prepared by spin coating using aqueous solutions of metal salts containing polyvinylpyrrolidone, where niobium oxide layers and lead—magnesium–titanium oxide layers were laminated on Pt(111)/TiO _x /SiO₂/Si(100) substrates and fired at 750° or 800°C. 250 ± 20 nm thick 0.7PMN–0.3PT thin films of a single-phase perovskite could be prepared, and the film fired at 750°C had dielectric constants and dielectric loss of 1900 ± 350 and 0.13 ± 0.03, respectively, exhibiting polarization-electric field hysteresis with a remanent polarization of 5.1 μC/cm² and a coercive field of 21 kV/cm.     

A Novel Method for Fabrication of Y2O3-Stabilized ZrO2 Electrolyte Films

Gas-tight Y₂O₃-stabilized ZrO₂ (YSZ) films were prepared on NiO–YSZ and NiO–SDC (Sm_0.2Ce_0.8O_1.9) anode substrates by a novel method. A cell, Ni–YSZ/YSZ(10 μm)/LSM–YSZ, was tested with humidified hydrogen as fuel and ambient air as oxidant. The maximum power densities of 1.64, 1.40, 1.06, and 0.60 W/cm² were obtained at 850°, 800°, 750°, and 700°C, respectively. With methane as fuel, a cell of Ni–SDC/YSZ (12 μm)/LSM–YSZ exhibited the maximum power densities of 1.14, 0.82, 0.49, and 0.28 W/cm² at 850°, 800°, 750°, and 700°C, respectively. The impedance results showed that the performance of the cell was controlled by the electrode polarization rather than the resistance of YSZ electrolyte film.     

Liquid Immiscibility in the System Na2O-ZnO-B2O3-SiO2

The limits of miscibility within a portion of the system Na₂O-ZnO-B₂O₃-SiO₂ were determined at 650°, 800°, and 950°C. The miscibility gap at 800° and 950°C is a low dome, adjoining the zinc borosilicate miscibility gap. Below 755°C the dome intersects the Na2O-B₂O₃-SiO₂ face of the phase diagram. The locus of this intersection is in agreement with literature data on the sodium borosilicate system. Estimated tie-line placement in the ZnO-B₂O₃-SiO₂ miscibility gap at 1300°C resembles those reported for the corresponding CaO and SrO systems. The microscopic morphology of glasses with the weight composition xNa₂O-18ZnO-18B₂O₃-64SiO₂ with 0≤×≤12 is described in detail.     

Synthesis of ZrO2 and Y2O3-Doped ZrO2 Thin Films Using Self-Assembled Monolayers

Undoped or Y₂O₃-doped ZrO₂ thin films were deposited on self-assembled monolayers (SAMs) with either sulfonate or methyl terminal functionalities on single-crystal silicon substrates. The undoped films were formed by enhanced hydrolysis of zirconium sulfate (Zr(SO₄)·4H₄O) solutions in the presence of HCl at 70°C. Typically, these films were a mixture of two phases: nanocrystalline tetragonal- ( t -) ZrO₂ and an amorphous basic zirconium sulfate. However, films with little or no amorphous material could be produced. The mechanism of film formation and the growth kinetics have been explained through a coagulation model involving homogeneous nucleation, particle adhesion, and aggregation onto the substrate. Annealing of these films at 500°C led to complete crystallization to t -ZrO₂. Amorphous Y₂O₃-containing ZrO₂ films were prepared from a precursor solution containing zirconium sulfate, yttrium sulfate (Y₂(SO₄)₃8·H₂O), and urea (NH₂CONH₂) at pH 2.2–3.0 at 80°C. These films also were fully crystalline after annealing at 500°C.     

Polymeric Cyanoborane, (CNBH2)n: Single Source for Chemical Vapor Deposition of Boron Nitride Films

Polymeric cyanoborane, (CNBH₂) _n , is a material readily prepared by passing hydrogen chloride through an ether suspension of sodium cyanotrihydroborate. This polymeric material was volatilized in a CVD reactor to produce, at 600°C, amorphous films containing boron, nitrogen, and carbon. Residual carbon present in the films was removed by ammonia treatment at 800°C, producing nearly stoichiometric boron nitride films that were adherent to a variety of substrates including silicon.     

Design of Ceramic Materials for Chemical Sensors: SmFeO3 Thick Films Sensitive to NO2

Ultrafine SmFeO₃ powders were prepared by the thermal decomposition at 700°C of the corresponding hexacyanocomplex, Sm[Fe(CN)₆]·4H₂O. These powders were used for the preparation of pastes which were deposited as thick films on alumina substrates with comb-type Au electrodes. The films were fired at different temperatures in the 800-1000°C range. The content of α-terpineol, a component of the organic vehicle, was varied in the range 0.0046-4 wt%. The microstructure, the chemical composition at the surface, the electrical conductivity, and the NO₂ sensing properties of the films were investigated. The content of α-terpineol strongly influenced the electrical conductivity and its activation energy. A significant reduction in the NO₂ response was observed for the films containing smaller amounts of α-terpineol, together with an increase in conductivity. On the other hand, the largest NO₂ response was observed for the films fired at 1000°C when 4 wt% of α-terpineol was used. Such increase in conductivity is attributed to a different oxygen surface layer on the SmFeO₃ surface, which is induced by the decomposition reaction of α-terpineol during sintering. The materials processing parameters are thus of primary concern for the NO₂ sensing properties of the SmFeO₃ thick films. The correlations found between activation energy, NO₂ sensitivity, and materials characteristics (influenced by the preparation parameters) are reported. These correlations can be used to design the gas-sensing properties of SmFeO₃ thick films for the optimization of their sensing characteristics.     

Structural Variation of the BaTi4O9 Thin Films Grown by RF Magnetron Sputtering

BaTi₄O₉ thin films were grown on a Pt/Ti/SiO₂/Si substrate using rf magnetron sputtering and the structure of the thin films were then investigated. For the films grown at low temperature (≤350°C), an amorphous phase was formed during the deposition, which then changed to the BaTi₅O₁₁ phase when the annealing was conducted below 950°C. However, when the annealing temperature was higher than 950°C, a BaTi₄O₉ phase was formed. On the contrary, for the films grown at high temperature (>450°C), small BaTi₄O₉ grains were formed during the deposition, which grew during the annealing. The homogeneous BaTi₄O₉ thin films were successfully grown on Pt/Ti/SiO₂/Si substrate when they were deposited at 550°C and subsequently rapid thermal annealed at 900°C for 3 min.     

Effect of Li2CO3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Mg2V2O7 Ceramics

Li₂CO₃ was added to Mg₂V₂O₇ ceramics in order to reduce the sintering temperature to below 900°C. At temperatures below 900°C, a liquid phase was formed during sintering, which assisted the densification of the specimens. The addition of Li₂CO₃ changed the crystal structure of Mg₂V₂O₇ ceramics from triclinic to monoclinic. The 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic was well sintered at 800°C with a high density and good microwave dielectric properties of ɛ _r=8.2, Q × f =70 621 GHz, and τ_f=−35.2 ppm/°C. Silver did not react with the 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic at 800°C. Therefore, this ceramic is a good candidate material in low-temperature co-fired ceramic multilayer devices.     

Influence of Oxygen Partial Pressure and Oxygen Content on the Wettability in the Copper–Oxygen–Alumina System

The influence of oxygen on the wetting behavior of copper on single-crystal Al₂O₃ has been studied. By controlling the oxygen partial pressure ( p _O2) and oxygen content in the copper simultaneously, contact angle can be varied between 125° and 22°. Evaluation of the Gibbs adsorption equation for the liquid/solid interface at 1300°C suggests that adsorption of a Cu-O complex at that interface plays a key role in promoting wetting. Formation of CuAlO₂ and dissolution of Al₂O₃ in the melt also influence the contact angle, especially in the range of p _O2 > 10⁻⁵ bar (1 Pa).     

Low-Temperature Synthesis Route to MgNb2O6

A solution-derived precursor may be calcined at temperatures >500°C to yield MgNb₂O₆. Calcining temperatures 800°C result in the familiar, cation-ordered columbite structure type. Calcining temperatures <800°C result in a previously unobserved, cation-disordered α-PbO₂ structure type. The low-temperature form of MgNb₂O₆ is a more reactive material than is obtained by conventional solid-state reaction as evidenced by its small particle size and its ability to react with PbO to form lead magnesium niobate at lower temperatures.