Wide range tuning of electrical conductivity of RF sputtered CdO thin films through oxygen partial pressure variation

The effect of oxygen partial pressure variation on the electrical conductivity and the optical transparency of CdO thin films, deposited through RF magnetron sputtering were studied in detail. Thin films of CdO have been deposited through radio frequency magnetron sputtering of a prefabricated CdO target at a fixed pressure 0.1 mbar and at a substrate temperature 523 K. It was found that the electrical conductivity of the CdO films could be varied over three decades for a variation of oxygen partial pressure of 0–100%, without introducing any extrinsic dopants. X-ray diffraction (XRD) studies showed that the films were polycrystalline in nature with a preferential orientation along (1 1 1) plane. Compositional information was obtained by X-ray photoelectron spectroscopic studies. This wide range of variation of electrical properties was explained through the oxygen vacancies formation.     

Structural,optical, and H2 gas sensing analyses of Cr doped CuO thin films grown by ultrasonic spray pyrolysis

Here, a specific metal oxide (CuO) and its impurity (Cr) added composites were grown onto glass substrates as nanostructured thin films by executing ultrasonic spray pyrolysis method. The effects of the varied Cr dopant concentration on the morphological, structural, optical and H₂ gas sensor properties of the synthesized CuO thin films were determined by conducting scanning electron microscopy, X-ray Diffraction, X-ray photoelectron spectroscopy, photoluminescence spectroscopy, ultraviolet–visible spectroscopy, and gas detection analyses. The X-Ray Diffraction analysis revealed the presence of CuO crystals with predominant (111) plane and it changed to (002) orientation for the doped samples, where crystallite sizes varied between 32 and 46 nm. The structural studies disclosed that the crystalline structure modified due to the added impurities. The scanning electron microscopy observations unveiled polyhedron-like shape formations of the synthesized nanostructures which also showed clear indications of changed morphology due to the impacts of different Cr doping percentages. Besides, the presence of copper, oxygen, and chromium was confirmed by EDX elemental analysis as well as X-ray photoelectron spectroscopy. The optical examination concluded that absorbance values followed a random trend with respect to the increased impurity contents while bandgap decreased with the increase of doping concentration. And, it was also noted that the luminescent emission peaks decreased in the photoluminescence spectroscopy as a result of introduced impurity levels. Finally, H₂ responsivity was detected for the grown films and found out that the impurity doping notably increased the sensitivity of the gas sensor based on the prepared CuO nanostructures.     

The effects of various annealing regimes on the microstructure and physical properties of ITO (In2O3:Sn) thin films deposited by electron beam evaporation for solar energy applications

The goal of this study has been to investigate the influence of various post-deposition heat treatments on the microstructure, electrical and optical properties of In₂O₃:Sn (ITO) thin films deposited by electron beam evaporation. We have shown that electron beam evaporated ITO thin films deposited onto substrates kept upto 150 °C, have poor electrical properties and low optical transmission in the visible range, due to their amorphous structure. As the microstructure changes from amorphous to polycrystalline it was observed that the film resistivity decreases and it is simultaneously related to an improvement in the optical transmission. From comparisons of several annealing processes it has been observed that oxygen plays an important role in doping as well as the presence of Sn in the target material. Furthermore we have shown that high quality ITO thin films can be reproducibly prepared with optical transmission being enhanced by an annealing in air and the electrical characteristics being improved by a further annealing in a reducing atmosphere. Superior electrical and optical properties could be correlated with annealed films that exhibited a cubic bixbyte structure and large crystallite dimensions larger than 50 nm.     

Electrical,optical, and structural characterization of arsenic–tin oxidized transparent conducting films

A comprehensive structural, optical, electrical, and optoelectronic study of arsenic-doped SnO₂ was conducted. Several arsenic-doped SnO₂ thin films with different arsenic content have been prepared on glass and silicon substrates by a vacuum thermal evaporation technique. The structural, electrical and optical study show that some of As⁵⁺ ions occupied locations in interstitial positions of SnO₂ lattice. The prepared oxidized pure tin film is found to be consisting of orthorhombic and tetragonal SnO₂ structure. The optical properties show that arsenic-doped SnO₂ films are good transparent oxides. The bandgap of arsenic-doped SnO₂ varies with arsenic content following the Moss–Burstein rule. The electrical behaviors show that the prepared arsenic-doped SnO₂ films are degenerate semiconductors and might transform into insulators with increasing arsenic doping level. The electrical properties (resistivity, mobility, and carrier concentration) vary depending on the arsenic doping level. The SnO₂ film doped with wt. 0.6% arsenic shows utmost dc electrical conductivity parameters: resistivity of 4.6 × 10^?2 Ω cm, mobility of 6.0 cm²/V s, and carrier concentration of 2.25 × 10¹⁹ cm^?3. From transparent-conducting-oxide (TCO) point of view, low arsenic concentration (less that 1%) is effective for SnO₂ donor doping but not emulate doping with other dopant like Sb.     

Electrodeposition of p–i–n type CuInSe2 multilayers for photovoltaic applications

Copper indium diselenide polycrystalline thin films of p-, i- and n-type electrical conductivity were grown using a one-step electrodeposition process in a single bath. The bulk structure and the stoichiometry of the layers were determined using X-ray diffraction and X-ray fluorescence. The material composition was correlated with the electrical conductivity type variation, detected by the photoelectrochemical cell. Atomic force microscopy analysis showed copper-rich films deposited at low cathodic potentials (0.6 V vs Ag/AgCl) are of spherical and granular morphology and the grain sizes were 0.3–0.5 μm, while stoichiometric CIS films deposited at 1.0 V vs Ag/AgCl have grain sizes of 0.1–0.4 μm. The initial studies of optoelectronic properties (V_oc, J_sc and FF) of the four-layer solar cell devices (glass/FTO/n-CdS/n-CIS/i-CIS/p-CIS/Au) are presented.     

Thickness dependence of ZnO:In thin films doped with different indium compounds and deposited by chemical spray

Indium-doped zinc oxide thin films were deposited on glass substrates by the chemical spray technique. Hydrated zinc 2,4-pentanedionate was used as zinc source. Four different indium compounds were separately used as dopants (indium nitrate, indium sulfate, indium acetate, and indium chloride). The effect of the thickness on the electrical, structural, morphological and optical characteristics of ZnO:In thin films was studied. Electrical resistivity values corresponding to good conductive electrodes were obtained irrespective of the indium compound used, although a decrease in electrical resistivity is found in all the cases as the film thickness increases, reaching a saturation value of 2×10⁻³ Ω cm. All films were polycrystalline with a wurtzite phase, and exhibited a (1 0 1) preferential orientation almost irrespective of neither the doping source nor thickness. The surface morphology was analyzed by scanning electron microscopy and a strong dependence on the indium compound and thickness was found, since grain geometry variations from rounded to rod-like forms were observed. As the film thickness increases, the film transmittance and the band-gap values decrease. Band-gap energy values were in the range of 3.21 to 3.44 eV.     

CuInSe2 thin film preparation through a new selenisation process using chemical bath deposited selenium

Copper indium selenide thin films were prepared through a novel and an eco-friendly selenisation process. In this method, selenium film required for selenisation was prepared using chemical bath deposition technique, at room temperature. Thus, totally avoided usage of highly toxic H₂Se or selenium vapour. Here, the process involved annealing the Stacked layer, Se/In/Cu in which Cu and In were deposited using vacuum evaporation technique. Investigations on the solid-state reaction between the layers were done by analysing structural and optical properties of films formed at different annealing temperatures. Optimum annealing condition for the formation of copper indium selenide thin film was found to be 673 K for 1 h in high vacuum. Compositional dependence of the growth process was also studied using various Cu/In ratios. Optical band gap was decreased with increase in Cu/In ratio. Carrier concentration and hence conductivity were found to be increased with increase in Cu/In ratio. The films obtained were p-type and highly Cu-rich films were degenerate.     

Evaluation of hydrogen evolution reaction on chemical bath deposited Cu2O thin films: Effect of copper source and triethanolamine content

The chemical bath deposition method was used to deposit thin films of cuprous oxide. The effect of copper source and triethanolamine content on the optical, morphological, structural, electrochemical and photoelectrochemical properties of the thin films for the development of photocathodes for hydrogen production was investigated. Triethanolamine promotes the complexing of Cu⁺ ions independent of the copper source used, its increase promotes thicker films due to better growth control and reduction of rapid Cu₂O precipitation in the bulk solution. The increase in thickness promoted a change in preferential orientation from (111) plane to (200) plane, which also influenced and reduced the conductivity because there is a decrease in disorder (Urbach energy E_U). The thickness also varied due to copper source used, reaching the thickest films with copper nitrate while the thinnest films with copper acetate, this tendency is in agreement with their solubility in water. The lower solubility reduces the complexing of Cu ⁺ ions which promotes the Cu₂O precipitation in the bulk solution, limiting the growth of the film. Also, electrical properties varied (measured as disorder E_U) with copper source. The most conductive being the thin films deposited with copper acetate and nitrate while the most resistive being the films deposited with copper sulphate. Very little variation in optical properties was observed, estimating the band gap in the range of 2.62–2.66 eV, while high absorption coefficient (>10⁵ cm^?1) was calculated below the absorption edge (460–470 nm). All thin films showed p-type semiconducting behavior with a flat band potential in the range of ?0.10 to 0.18 V (Ag/AgCl sat electrode), which confirms their ability to work as photocathodes for hydrogen production. The best photoelectrochemical performance was observed with the thinnest films, which also are the most conductive and present the highest values of absorption coefficient.     

Irradiation-induced modifications and PEC response - A case study of SrTiO3 thin films irradiated by 120 MeV Ag ions

This paper deals with a study on the effect of 120 MeV Ag⁹⁺ ion irradiation on photoelectrochemical properties of SrTiO₃ thin films deposited on Indium doped Tin Oxide (ITO) coated glass by sol-gel spin-coating technique. The structural evolution in the pristine and irradiated films was determined by X-ray diffraction and X-ray photoelectron spectroscopy. Surface morphology was studied by Atomic Force Microscopy (AFM) and optical measurements were done by UV-visible absorption spectroscopy. Irradiation of SrTiO₃ thin films was found to be effective in improving its photoelectrochemical properties. A noticeable decrease in the average grain diameter from 36 to 26 nm, reduction in bandgap from 3.55 to 3.43 eV and increase in roughness after irradiation contributed in enhancing photoelectrochemical activity of SrTiO₃ thin films. Thin films irradiated at fluence 3 × 10¹² ions cm⁻², when used in PEC cell exhibited enhanced photocurrent of 0.16 mA cm⁻² at zero bias conditions, which was four times higher than that of the unirradiated sample.     

Preparation of conducting and transparent indium-doped ZnO thin films by chemical spray

Transparent conducting indium-doped zinc oxide thin films were prepared on soda-lime glass substrates by the spray pyrolysis technique. The dependence of the electrical, structural, morphological and optical properties on the preparation conditions has been studied. Two main variables, substrate temperature and molar concentration, were varied in the ranges of 425–525 °C and 0.05–0.5 M, respectively, in order to obtain films with low electrical resistivity and high optical transparency in the visible region. A minimum resistivity value around of 3×10⁻³ Ω cm was obtained for films deposited from highly concentrated starting solutions, 0.4 and 0.5 M. The values of the free-carrier concentration and the electronic mobility were estimated by Hall effect measurements. X-ray diffraction spectra evidenced a preferential orientation along the (1 0 1) direction. The surface morphology was clearly affected with the molar concentration variation, leading to a smoother appearance as the zinc concentration in the starting solution is increased. Typical optical transmittance values in the order of 85% were obtained in all the films.     

The electro-optical properties of amorphous indium tin oxide films prepared at room temperature by pulsed laser deposition

The electrical and optical properties of pulsed laser deposited amorphous indium tin oxide films at room temperature are discussed. The films were grown from indium oxide (In₂O₃) targets of different tin (Sn) doping content (0, 5 and 10 wt%) at different oxygen pressures (P_O2) ranging from 1×10⁻³ to 5×10⁻² Torr. The electrical and optical properties of the films were examined by Hall measurements and optical spectrophotometry. It was found that high conductivity amorphous films could be prepared at room temperature irrespective of the Sn doping content. The properties of these films deposited from 0, 5, 10 wt% Sn-doped In₂O₃ targets show a similar response to changes in P_O2. The maximal conductivity of (4.0, 2.1 and 1.8)×10³ S/cm and optical transmittance (visible) higher than 90% were obtained at P_O2 region of (1–1.5)×10⁻² Torr. An undoped In₂O₃ film produced the highest conductivity of 4×10³ S/cm in these studies.     

Deposition of hydrogenated amorphous silicon (a-Si:H) films by hot-wire chemical vapor deposition (HW-CVD) method: Role of substrate temperature

Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH₄) using hot-wire chemical vapor deposition (HW-CVD) method. We have investigated the effect of substrate temperature on the structural, optical and electrical properties of these films. Deposition rates up to 15 Å s⁻¹ and photosensitivity 10⁶ were achieved for device quality material. Raman spectroscopic analysis showed the increase of Rayleigh scattering in the films with increase in substrate temperature. The full width at half maximum of TO peak (Γ_TO) and deviation in bond angle (Δθ) are found smaller than those obtained for P-CVD deposited a-Si:H films. The hydrogen content in the films was found <1 at% over the range of substrate temperature studied. However, the Tauc's optical band gap remains as high as 1.70 eV or much higher. The presence of microvoids in the films may be responsible for high value of band gap at low hydrogen content. A correlation between electrical and structural properties has been found. Finally, the photoconductivity degradation of optimized a-Si:H film under intense sunlight was also studied.     

Solvent-dependent growth of sprayed FTO thin films with mat-like morphology

Highly textured fluorine-doped tin oxide thin films have been deposited using cost-effective spray pyrolysis technique. Precursor solution for spraying is prepared with solvents viz. methanol, ethanol, propane-2-ol and distilled water. The optical, structural, morphological and electrical properties of thin films have been studied. X-ray diffraction studies revealed polycrystalline tin-oxide (SnO₂) phase with tetragonal crystal structure and predominantly (2 0 0) oriented films, irrespective of solvents. The novel mat-like morphology is observed by scanning electron microscope (SEM). Hall-effect measurements revealed that the films are heavily doped degenerate semiconductor with n-type conductivity. The variations in electrical resistivity, carrier concentration and mobility with respect to spray solvents have been discussed. The typical P_FTO sample has maximum value of figure of merit (φ=6.18×10⁻² Ω⁻¹) with lowest ever-reported sheet resistance of 3.71 Ω.     

Highly conducting transparent nanocrystalline Cd1−xSnxS thin film synthesized by RF magnetron sputtering and studies on its optical, electrical and field emission properties

Transparent conducting Cd_1−xSn_xS thin films have been synthesized by radio frequency magnetron sputtering technique on glass and Si substrates for various tin concentrations in the films. X-ray diffraction studies showed broadening of peaks due to smaller crystal size of the Cd_1−xSn_xS films, and SEM micrographs showed fine particles with average size of 100 nm. Sn concentration in the films was varied from 0% to 12.6% as determined from energy-dispersive X-ray analysis. The room-temperature electrical conductivity was found to vary from 8.086 to 939.7 S cm⁻¹ and corresponding activation energy varied from 0.226 to 0.076 eV. The optimum Sn concentration for obtaining maximum conductivity was found to be 9.3%. The corresponding electrical conductivity was found to be 939.7 S cm⁻¹, and the mobility 49.7 cm² V⁻¹ s⁻¹. Hall measurement showed very high carrier concentrations in the films lying in the range of 8.0218×10¹⁸–1.7225×10²⁰ cm⁻³. The conducting Cd_1−xSn_xS thin films also showed good field emission properties with a turn on field 4.74–7.86 V μm⁻¹ with variation of electrode distance 60–100 μm. UV–Vis–NIR spectrophotometric studies of the films showed not needed the optical band gap energy increased from 2.62 to 2.80 eV with increase of Sn concentration in the range 0–12.6%. The optical band gap was Burstein–Moss shifted, and the corresponding carrier concentration obtained from the shift also well matched with that obtained from Hall measurement.     

Effect of single-cation doping and codoping with Mn and Fe on the photocatalytic performance of TiO2 thin films

TiO₂ thin films with varying Mn and Fe dopant levels (0.01–5.00 mol% metal basis; single cation doping and codoping) were deposited on soda-lime-silica glass substrates by spin coating, followed by annealing in air at 450 °C for 2 h. The mineralogical, morphological, optical, and photocatalytic properties of the thin films were determined. The fabricated films were ∼250 nm thick and they were comprised of grains of ∼20–30 nm size. Anatase (or amorphous titania) was the only phase in essentially all the films, with the dopants' being soluble in anatase. All of the films were transparent (∼80%) in the visible region and the optical indirect band gaps were ∼3.4 eV. Photocatalytic testing (≤24 h) showed that the extent of photodegradation decreased with increasing dopant levels. The 0.01 mol% Fe-doped sample showed the best photoactivity since, at this doping level, the negative effects of electron/hole recombination and lattice distortion probably were minimal.     

Phase transformation of solution‐based p‐type Cu2ZnSnS4 thin film: applicable for solar cell

In this present work, quaternary Cu₂ZnSnS₄ thin films were deposited on commercial glass substrates at room temperature by a novel solution growth dip coating technique. The influence of annealing temperature of the films at 300 °C in a hot air furnace without the presence of any inert gas, on structural, optical, and electrical properties was investigated and discussed. The structural analyses were analyzed by X‐ray diffraction and Raman spectroscopy, whereas optical and electrical properties were analyzed by means of ultra violet infrared (UV‐ViS/IR). The results analyzed showed that there exists a phase formation from orthorhombic to kesterite crystal structure with an increase in optical bandgap and an optical conductivity, with an increase in annealing temperature. The electrical conductivity was observed of the order of 10^?6 ohm cm^?1. Copyright © 2015 John Wiley & Sons, Ltd.     

Some physical properties of Cd1−xSnxS films used as window layer in heterojunction solar cells

CdS has been proved to be an ideal material for use as the window layer for heterojunction solar cells especially with n-CdS/p-CdTe. CdS, Cd_0.9Sn_0.1S and Cd_0.8Sn_0.2S films were deposited onto glass substrates at 300 °C substrate temperature by using ultrasonic spray pyrolysis technique (USP). The effect of Sn concentration on some structural, optical and electrical properties of the films was presented. The crystal structure and orientation of the films were investigated by X-ray diffraction (XRD) patterns. XRD patterns showed that films have polycrystalline nature with a hexagonal structure. The grain size of the films decreased with increasing x values. The optical band gap values were obtained from optical absorption spectra of the films. The optical band gap values of the films were found to be between 2.44 and 2.45 eV. The variations of conductivity of Cd_1−xSn_xS (0 ≤ x ≤ 0.2) films have been investigated depending on applied voltage in dark and under illumination. The resistivity significantly decreased with increasing tin concentration and under illumination.     

Structural and electrical properties of magnetron sputtered Ti(ON) thin films: The case of TiN doped in situ with oxygen

Incorporation of oxygen into TiN lattice results in formation of titanium oxynitrides, TiO_xN_y that have become particularly interesting for photocatalytic applications. Elaboration as well as characterization of TiN and in situ oxygen-doped thin films is the subject of this paper. Thin films, 250-320 nm in thickness, have been deposited by dc-pulsed magnetron reactive sputtering from Ti target under controllable gas flows of Ar, N₂ and O₂. Optical monitoring of Ti plasma emission line at λ = 500 nm has been implemented in order to stabilize the sputtering rate. Scanning electron microscopy (SEM), X-ray diffraction in grazing incidence (GIXRD), micro-Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), optical spectrophotometry and four-point probe electrical resistivity measurements have been performed in order to follow evolution of film physical parameters as a function of the oxygen flow rate ηO₂ at which the films were deposited. The relationship between ηO₂ expressed in standard cubic centimetres per minute, sccm and the nitrogen/oxygen content in thin films has been established by means of the analysis of the XPS spectra. GIXRD studies indicate that incorporation of oxygen results in a progressive loss of preferential orientation in 〈1 1 1〉 direction, a change in the grain size from 16 nm for TiN to about 3 nm for films deposited at ηO₂=1.32 sccm and a decrease in the lattice constant. A systematic shift of all X-ray diffraction (XRD) lines towards higher diffraction angles is consistent with substitution of oxygen for nitrogen. Micro-Raman investigations indicate amorphisation of thin films upon oxidation. Binding energies determined from fitting of the XPS results concerning the N1s and Ti2p lines give evidence of the presence of TiO_xN_y compound. Red-shift of the plasma reflectance edge upon TiN oxidation is correlated with a decreased carrier concentration. Metal-semiconductor transition can be expected on the basis of the electrical conductivity decrease and development of the fundamental absorption across the forbidden band of TiO₂ upon increase in the oxygen flow rate. Additional absorption feature in the visible range, being a consequence of coexistence of free-electron and interband absorption within almost the same spectral range (λ = 400-600 nm) seems to be very promising for photocatalytic applications of titanium oxynitride thin films.     

Effect of tellurium doping on the structural, optical, and electrical properties of CdO

Te-doped CdO thin-films (1%, 3%, and 5%) have been prepared by a vacuum evaporation method on glass and silicon-wafer substrates. The prepared films were characterised by X-ray fluorescence, X-ray diffraction, UV-VIS-NIR absorption spectroscopy, and dc-electrical measurements. Experimental data indicate that Te ions doping slightly stresses the host CdO crystalline structure and changes the optical and electrical properties. The bandgap of the host CdO was suddenly narrowed by about 23% due to a little (1%) doping with Te ions. This bandgap shrinkage was explained by effects of trap levels overlapping with conduction band. The electrical behaviours of the Te-doped CdO films show that they are degenerate semiconductors with a bandgap of 1.7-2.2 eV. The 1% Te-doped CdO film shows increase its mobility by about 5 times, conductivity by ∼140 times, and carrier concentration by ∼27 times, relative to undoped CdO film. From transparent-conducting-oxide point of view, Te is sufficiently effective for CdO doping. Finally, the absorption in the NIR spectral region was studied in the framework of the classical Drude theory.     

Influence of dysprosium doping on the electrical and optical properties of CdO thin films

Lightly Dy-doped CdO thin films (molar 0.5%, 1%, 2%, and 2.5%) have been prepared by a vacuum evaporation method on glass and Si wafer substrates. The prepared films were characterised by X-ray fluorescence, X-ray diffraction, UV-vis-NIR absorption spectroscopy, and dc-electrical measurements. Experimental data indicate that Dy³⁺ doping slightly stretchy-stresses the CdO crystalline structure and changes the optical and electrical properties. The bandgap of CdO was suddenly narrowed by about 20% due to a little doping with Dy³⁺ ions. Then, as the Dy doping level was increased, the energygap was also increased. This variation was explained by the effect of Burstein-Moss energy shift (or bandgap widening effect) together with a bandgap shrinkage effect. The electrical behaviour of the samples shows that they are degenerate semiconductors. However, the 2% Dy-doped CdO sample shows an increase in its mobility by about 3.5 times, conductivity by 35 times, and carrier concentration by 10 times relative to undoped CdO film. From transparent conducting oxide point of view, Dy is sufficiently effective for CdO doping.