Solvothermal approach for low temperature deposition of aluminium oxide thin films

At elevated pressure, stoichiometric and high quality Al₂O₃ thin films are fabricated at 65-105 °C. By using pre-organised single source precursor aluminium(III) diisopropylcarbamate, Al₂O₃ were deposited on the surface of a Si substrate in a single step in the liquid phase. Comprehensive removal of large carbamate ligands by proposed β-elimination during decomposition of precursor led to an effective delivery of enshrouded Al-O fragments. Scanning electron microscopy revealed dense and grainy surface morphology. The thicknesses of the films were measured to be 150-300 nm and independent to reaction temperatures or reaction times. Through the use of near edge X-ray absorption fine structure spectroscopy, Al absorption peaks suggest a short range crystalline formation in a film deposited at 105 °C.     

Characteristics of germanium thin film thermometers for use at low temperatures

Germanium, thin films to be used as resistance thermometers have been tested at liquid helium temperature. Germanium is deposited in vacuum on insulated substrates and then silver is deposited onto the germanium films as ohmic contacts. Thermometers with desired resistances and suitable sensitivities can be easily fabricated by choosing proper deposition conditions. These thermometers have a quick response time and can be used to measure rapidly changing surface temperatures.The film resistance can be expressed as a function of temperature by a simple correlation, log R = C₀ + C₁ log T, between 4.2 K and 20 K. The sensitivity is approximately 20 Ω/K^?1 at 4.2 K. After 50 thermal cycles, the resistance at liquid helium temperature increased slightly, but is reproducible to within 0.8%. An estimated heat capacity of the germanium film is 2 × 10^?8 J K^?1, and a thermal relaxation time is of the order of 10^?12 s at 4.2 K.A stainless steel ribbon with the thermometers deposited on its surfaces is heated by a direct current in a liquid helium pool, and the surface temperature is measured. Large temperature oscillations due to occasional liquid solid contacts are observed.     

Effects of low temperature on the characteristics of tantalum thin films

In this paper the effects of substrate temperature (room temperature – 350 °C) on the phase composition and crystallization orientation of the tantalum thin film deposited by direct current magnetron sputtering in an extremely low power deposition regime are presented. In this experiment, heating the substrates to 350 °C resulted in the growth of the hard and brittle tetragonal crystalline structure (β-Ta). Deposited tantalum has a conical structure with large voided boundaries. Sheet resistance of samples is much larger than for the convenient conductors which decreased with increasing the substrate temperature.     

Electrical conductivity of copper nanoparticle thin films annealed at low temperature

Copper nanoparticles with a mean diameter of 20 nm were used to prepare electrical conductive films at low temperature. After dispersal in an organic solvent, the copper nanoparticle pastes were coated onto a glass substrate, which was then annealed under various conditions to investigate the effects of various atmospheric conditions, such as air, nitrogen gas or hydrogen gas, as well as different annealing temperatures. Two-step annealing, which first involves oxidation in air followed by reduction, is effective in the preparation of high electrical conductive copper nanoparticle films. The copper nanoparticle films that were calcined in air for 1 h and then hydrogen gas for 1 h at a low temperature of 200 °C showed a low resistivity of 2 × 10^-5 Ω cm.     

Effects of low temperature on the characteristics of tantalum thin films

In this paper the effects of substrate temperature (room temperature - 350 °C) on the phase composition and crystallization orientation of the tantalum thin film deposited by direct current magnetron sputtering in an extremely low power deposition regime are presented. In this experiment, heating the substrates to 350 °C resulted in the growth of the hard and brittle tetragonal crystalline structure (β-Ta). Deposited tantalum has a conical structure with large voided boundaries. Sheet resistance of samples is much larger than for the convenient conductors which decreased with increasing the substrate temperature.     

A-15-type Nb-Si thin films prepared by co-evaporation and their atomic ordering processes

Niobium-silicon thin films are prepared by a co-evaporation technique. The crystal structure, lattice parameters, and long-range order parameter of the atoms are measured. Thin films with Si concentration near 15 at % have a single phase of A-15-type crystal structure. The maximum Si concentration of the A-15-type phase films obtained is 18 at %. The critical temperature of the Nb-Si thin films is experimentally proved to depend both on the Si concen - tration of the A-15-type phase and on the long-range order parameter. From phenomenological studies on the long-range ordering process of thin films, the order parameter is found to depend on the substrate temperature, the deposition rate, and the background gas pressure.     

Superconducting tungsten films for use as phase transition thermometers for calorimetric detectors

To improve the sensitivity of calorimetric particle detectors we want to produce low-T_c superconducting thin films to be used as phase transition thermometers. We have succeeded in depositing epitaxial -tungsten films on sapphire which have critical temperatures T_c near 15 mK. To our knowledge this is the first time that the T_c of bulk tungsten has been observed in thin films. Such a film has been produced on a 4 g sapphire crystal and operated as a calorimeter, giving an energy resolution of 75 eV (FWHM) for 1.5 keV X-rays.     

Fabrication and characterization of nano TiO2 thin films at low temperature

Anatase TiO₂ thin films were successfully prepared on glass slide substrates via a sol–gel method from refluxed sol (RS) containing anatase TiO₂ crystals at low temperature of 100 °C. The influences of various refluxing time on crystallinity, morphology and size of the RS sol and dried TiO₂ films particles were discussed. These samples were characterized by infrared absorption spectroscopy (FT-IR), X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission-scanning electron microscopy (FE-SEM) and UV–vis absorption spectroscopy (UV–vis). The photocatalytic activities of the TiO₂ thin films were assessed by the degradation of methyl orange in aqueous solution. The results indicated that titania films thus obtained were transparent and their maximal light transmittance exceeded 80% under visible light region. The TiO₂ thin films prepared from RS-6 sol showed the highest photocatalytic activity, when the calcination temperature is higher than 300 °C. The degradation of methyl orange of RS-6 thin films reached 99% after irradiated for 120 min, the results suggested that the TiO₂ thin films prepared from RS sol exhibited high photoactivities.     

微波等离子体低温制备氮杂二氧化钒薄膜

选用V2O5为前驱物,通过在玻璃片上镀膜,采用微波等离子体增强法,在低温条件下,成功制备了氮杂二氧化钒薄膜.通过X射线衍射(XRD),FT-IR对样品进行表征,结果表明:合成的样品为多晶氮杂二氧化钒.相变温度测试结果表明:退火工艺可以降低相变温度,同时提高薄膜的结晶度;改变氮气流量,相变温度先降低后升高,当氮气流量为20ml/min时,相变温度可以降低至40℃.     

Carbon resistor bolometers and thermometers and their characteristics in field modulation studies

Bolometers and thermometers made of commercially available carbon resistors display large magnetic field dependent signals when used with field modulation. These signals are not induced pick-up or magneto-resistive effects, but are shown to be fully explained by small amounts of magnetic impurities. Such effects can be reduced by proper design of field modulation experiments involving bolometers.     

低温热氧化处理温度与时间对氧化钒薄膜性能的影响

采用直流对靶磁控溅射氧化钒薄膜再附加热氧化处理的方式进行金属-半导体相变特性氧化钒薄膜的制备,研究了低热处理温度下热处理温度与时间对氧化钒薄膜组分、晶体结构和相变性能的影响.新制备的氧化钒薄膜为V2O3和VO的混合相.经300℃/1h热处理后,薄膜内出现单斜结构VO2,薄膜具有相变特性;保持热处理时间不变,升高热处理温度至360℃,薄膜表面变得致密,致密的薄膜表面阻碍了氧气与薄膜内部V2O3和VO的反应,VO2成分含量与300℃/1h处理时的含量接近;增加热处理温度并延长热处理时间,如热处理条件为320℃/3h时,薄膜内VO2成分大量增多,电阻值变化幅度超过两个数量级;在300～360℃的热处理温度区间内,薄膜内V2O3和VO不断向VO2转变,相变性能变好,但对VO2的单斜金红石结构没有影响.     

新型三明治结构铝诱导非晶硅薄膜低温晶化增强

本文对比探索了新型Al/α -Si/Al三明治结构与传统的Al/α -Si双层结构对铝诱导非晶硅薄膜低温晶化结果的影响,结果表明在相同的制备及退火条件下,前者更利于形成高度晶化的多晶硅薄 .膜.本研究工作利用拉曼光谱、掠入射X射线衍射、光学显微镜、方块电阻等表征方法探讨了薄膜厚度比和退火温度对金属诱导非晶硅薄膜晶化的程度、晶体结构以及电学性能的影响,最终制备出了电阻率仅为2.5 Ω·cm的多晶硅薄膜.     

热丝CVD法低温制备的多晶硅薄膜质量对衬底依赖性的研究

以SiH4和H2作为反应气体,采用HWCVD的方法分别在石英玻璃、AZO、Si（100）和Si（111）衬底上制备了多晶硅薄膜。利用X射线衍射（XRD）,拉曼（Raman）光谱和傅里叶红外（FT-IR）吸收光谱研究了不同衬底对多晶硅薄膜的择优取向、晶化率和应力的影响,用SEM观察了多晶硅薄膜的表面形貌。研究发现在4种衬底上生长的多晶硅薄膜均为（111）择优取向。单晶硅片对多晶硅薄膜有很强的诱导作用,并且Si（111）的诱导作用优于Si（100）的诱导作用。AZO对多晶硅薄膜生长也有一定的诱导作用。通过计算薄膜晶态比,得到除以石英为衬底的样品外,其它3种样品的晶态比均在90%以上,尤其以单晶硅片为衬底的样品更高。石英玻璃、AZO和Si（100）上生长的多晶硅薄膜中均存在压应力。     

Lithium cobalt oxide thin films deposited at low temperature by ionized magnetron sputtering

Thin films of lithium cobalt oxides have been deposited by ionized magnetron sputter deposition with and without substrate heating. The technique uses a built-in radio frequency coil to generate an inductively coupled plasma (ICP) confined close to the substrate. The ICP plasma results in ion bombardment on the film surface, which serves as an extra energy input during film growth. Therefore, the film properties can be modified at a relatively lower temperature. The plasma irradiation induces variations of crystallography and morphology, as characterized by X-ray diffraction and scanning electron microscopy. The deposited films were tested as cathodes for lithium batteries, and the discharge curves were measured to compare the electrochemical properties of the deposited films. Applying suitable plasma irradiation, well crystallized LiCoO₂ phase was obtained at 350 °C (substrate temperature), which was much lower than the temperature (700 °C-750 °C) for conventional post anneal process. The LiCoO₂ films, fabricated under in-situ plasma irradiation and a relatively lower substrate temperature (350 °C), showed a discharge potential plateau at 4.3 V-3.8 V with a capacity of ∼ 110 mAh/g as discharged to 1.5 V.     

离子束辅助磁控溅射低温沉积ITO透明导电薄膜的研究

本文对离子束辅助磁控溅射低温沉积的ITO薄膜进行了研究,重点考察了辅助离子束能量对ITO薄膜的光电性能和晶体结构的影响。结果表明:当A r/O2辅助离子束能量为900 eV左右时能够有效改善ITO薄膜的光电性能,在从非晶到多晶的转变过程中ITO薄膜具有较低的电阻率。在聚碳酸酯(PC)基片上制备了平均可见光透过率81.0%、电阻率为5.668×10-4ohm cm、结构致密且附着力良好的ITO薄膜,基片无变形。     

Highly adherent bioactive glass thin films synthetized by magnetron sputtering at low temperature

Thin (380–510 nm) films of a low silica content bioglass with MgO, B₂O₃, and CaF₂ as additives were deposited at low-temperature (150°C) by radio-frequency magnetron sputtering onto titanium substrates. The influence of sputtering conditions on morphology, structure, composition, bonding strength and in vitro bioactivity of sputtered bioglass films was investigated. Excellent pull-out adherence (~73 MPa) was obtained when using a 0.3 Pa argon sputtering pressure (BG-a). The adherence declined (~46 MPa) upon increasing the working pressure to 0.4 Pa (BG-b) or when using a reactive gas mixture (~50 MPa). The SBF tests clearly demonstrated strong biomineralization features for all bioglass sputtered films. The biomineralization rate increased from BG-a to BG-b, and yet more for BG-c. A well-crystallized calcium hydrogen phosphate-like phase was observed after 3 and 15 days of immersion in SBF in all bioglass layers, which transformed monotonously into hydroxyapatite under prolonged SBF immersion. Alkali and alkali-earth salts (NaCl, KCl and CaCO₃) were also found at the surface of samples soaked in SBF for 30 days. The study indicated that features such as composition, structure, adherence and bioactivity of bioglass films can be tailored simply by altering the magnetron sputtering working conditions, proving that this less explored technique is a promising alternative for preparing implant-type coatings.     

Titanium dioxide thin films for high temperature gas sensors

Titanium dioxide (TiO₂) thin film gas sensors were fabricated via the sol-gel method from a starting solution of titanium isopropoxide dissolved in methoxyethanol. Spin coating was used to deposit the sol on electroded aluminum oxide (Al₂O₃) substrates forming a film 1 μm thick. The influence of crystallization temperature and operating temperature on crystalline phase, grain size, electronic conduction activation energy, and gas sensing response toward carbon monoxide (CO) and methane (CH₄) was studied. Pure anatase phase was found with crystallization temperatures up to 800 °C, however, rutile began to form by 900 °C. Grain size increased with increasing calcination temperature. Activation energy was dependent on crystallite size and phase. Sensing response toward CO and CH₄ was dependent on both calcination and operating temperatures. Films crystallized at 650 °C and operated at 450 °C showed the best selectivity toward CO.