Ni-Al薄膜的制备和电性能研究

用双靶直流磁控共溅射制备了NixAl(1-x)(0.75相似文献   

厚膜导带上的粗丝键合

文章给出了混合集成电路厚膜导带膜厚、键合丝直径、以及加热老化的一系列数据，讨论了选用金合金浆料或银合金浆料所形成的金属化导带在可靠性提高方面的不同情况，论述了热老化对键合强度的影响以及键合丝的电气集成性能，并对大电流流经一组键合丝所形成的加热效应进行了测量。探讨了键合点接触电阻和键合强度衰减问题的动力学成因及产生机理。     

1.06 μm 连续激光辐照过程中45 号钢反射率变化机理

为研究合金在连续激光辐照过程中反射率变化机理,建立了积分球反射率测量装置,测量了1.06 m 连续激光辐照过程中45 号钢反射率变化。实验结果表明,激光辐照过程中反射率先快速下降,然后产生周期波动。随着激光功率增大,反射率开始下降点和最小值点对应温度逐渐升高,极大值个数增多。建立了多层氧化膜影响模型,结合氧化膜生长规律,分析了不同结构、不同厚度变化规律氧化膜层的反射率特征,实验结果验证了理论模型的合理性。结果表明,反射率变化主要原因是氧化膜生长引起的多光束干涉与吸收效应。由FeO-Fe3O4-Fe2O3 组成的三层氧化膜中,中间吸收型Fe3O4膜是反射率变化的主要影响因素,最外层Fe2O3 膜引起的干涉效应影响反射率的稳定值,最内层FeO膜的贡献可以忽略。     

Pb_(1-x)Sn_xTe红外探测器

近十多年来,半导体探测器和热电探测器取得了很大的进步。本文介绍这些成果的一个方面是在使用铅锡碲三元合金的红外探测器中以前介绍不多的金属一半导体(MS)结器件。     

金属氧化膜电阻温度系数的测定

采用由传感器AD590组成的水浴恒温箱测得不同温度下金属氧化膜电阻的阻值，通过大量的实验数据分析各种金属氧化膜电阻阻值与温度的关系，分析表明，阻值与温度之间呈线性关系，通过直线拟舍，得到电阻阻值与温度的关系式，通过关系式求得金属氧化膜电阻器的温度系数，建立阻值与温度的数学模型，这样就能得到不同温度下各种金属氧化膜电阻的理论预测值。     

可伐合金的可控氧化对封接质量的影响

研究了可伐合金表面氧化膜的类型和厚度对玻璃与可伐合金封接质量的影响.结果表明,氧化膜的类型和厚度直接影响金属与玻璃的封接质量.相对于工厂氧化条件,在可控条件下氧化的可伐合金与玻璃封接后的气密性一致性和可靠性较高.随着氧化膜厚度的增加,玻璃沿引线的爬坡高度逐渐增加,当控制氧化膜厚度不超过1.5μm时,爬坡高度都小于200...     

Sn-8Zn无铅钎料性能的研究

研究了不同微量合金元素(Bi、Ag)对Sn-8Zn无铅钎料高温抗氧化性能及接头剪切强度的影响,采用氧化质量增加△m值的方法,在高温下观察钎料表面氧化膜形状和颜色的变化并对氧化膜进行X射线衍射分析,探讨了钎料的高温抗氧化性能的机理,通过对钎料的金相显微组织观察和对热处理后钎焊接头的剪切强度试验,分析了提高接头剪切强度的原因.试验结果表明:在Sn-8Zn钎料中加入适量的合金元素(Bi、Ag)均可以改善和提高钎料的高温抗氧化性能和接头的剪切强度.     

集成电路镍铬薄膜的电阻特性与热处理效应

在利用磁控溅射方法制作用于ＩＣ的镍铬薄膜电阻过程中，发现在对薄膜热处理时薄膜的电阻特性发生了有规律的变化，这种变化不是单纯的线性增大或减小。针对这种现象，我们经过分析认为，由于金属膜薄的电阻率不同于块状金属的电阻率，已不是定值，它与金属膜厚有着一定的关系，而热处理所产生的凝聚效应、氧化效应、和稳态效应对不同厚度的薄膜电阻率的影响程度是不一样的，因此电阻经热处理后的变化值最终表现出不同的变化趋势。这一现象的发现对我们今后在ＩＣ镍铬合金薄膜电阻的设计优化方面具有较高的参考意义。     

紫外辐照对碲镉汞MIS结构复合特性的影响

用光电导衰退法和ＭＩＳ器件的电容－电压特性测量研究了紫外辐照对碲镉汞样品的影响。研究表明：紫外辐照使ＭＩＳ器件的氧化膜／碲镉汞界面固定电荷减少，表面由积累向平带变化；紫外辐照使碲镉汞样品的电阻明显增大，样品的表面复合速度上升，少子体寿命下降．说明紫外辐射不仅对碲镉汞样品的表面有影响，而且在磅镉汞体内也有影响，这些效应可以用碲镉汞表面能带结构的模型来解释。     

金属氧化膜对激光辐照效应的影响

激光与材料的能量耦合系数是研究激光与物质相互作用的基础。金属在空气中与激光相互作 用时,其能量耦合系数远大于理论值。文中以金属铁为例,研究金属氧化膜对激光与材料的能量耦合系 数的影响。利用温度场计算结果,结合铁在空气中的氧化规律,计算了激光辐照下氧化层厚度的增长及 氧化放热的影响;利用多层膜反射理论,结合氧化层厚度变化,分析了氧化膜导致的激光吸收增强效应,并将计算结果与实验结果进行比较,结果符合很好,证明了模型的合理性。计算结果表明,激光辐照期 间,氧化放热对温度场的贡献很小,就工程应用来说可以忽略,而氧化层带来的吸收增强效应影响较大,不能忽略,辐照一段时间后,激光耦合系数可以用氧化物的理论计算耦合率近似表征。     

A cell structure for a DC gas-discharge display panel

A dc gas-discharge display panel in which the metal cathodes are isolated from the gas by an MgO/metal cermet film is described. The use of such a film results in sufficient resistance to prevent electrical coupling between cells. At the same time, the low-work-function MgO provides a relatively high secondary-electron emission which results in a low operating voltage. Of interest is the fact that, despite the absence of isolating barriers between cells, no serious problems of crosstalk between cells occurs. Results on the aging characteristics of the cermet films are also described.     

Granular Films for Use as Thin-Film Resistors

Abstact  In this paper we discuss thin-film electrical resistors utilizing granular films of the type (Co,Ni)-(Al,Si)-O and their electrical resistive properties. Resistive properties of the granular film resistors drastically change with metal content and after annealing at 450°C. The values of temperature coefficient of resistance (TCR) in the optimum metal content of the granular films were as low as those of conventional metallic alloy film resistors. The values of sheet resistance were much higher than those of conventional metallic alloy resistors. Therefore, granular films are useful for application to thin-film resistors with the goal of miniaturizing them.     

Characteristics of In2O3:Sn films prepared by reactive r-f sputtering

Oxide films were prepared by sputtering onto various substrates from alloy targets ranging in composition from 90-In;10-Sn to 70-In;30-Sn by weight. Sputtering atmospheres varied from 100 percent argon to 100 percent oxygen. As-sputtered resistances ranged from ~ 300 Ω/□ to > 7 x 10⁶ for 2500 Å to 100 Å films respectively. The films were subse-quently annealed in reducing and oxidizing atmospheres for times up to 100 minutes and temperatures up to 500°C. Final resistances were typi-cally ~ 200 Ω/□ for a 400 Å-thick film annealed in forming gas; oxygen was somewhat less effective in lowering the resistance. The white-light transmission of the as-sputtered films varied from one percent to 90 percent as compared with the uncoated microscope slide. Annealing typically increased the transmission to 90–95 percent. Data are also presented on the effects of the film thickness and the substrate for both the as-sputtered and the annealed-film characteristics.     

快速热退火对ITO薄膜及LED芯片性能的影响

采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备了GaN基LED外延层,采用磁控溅射法制备了氧化铟锡(ITO)薄膜,ITO薄膜用于制作与p-GaN的欧姆接触.研究了快速热退火温度为550℃,退火时间为200 s时,不同氧气体积流量对ITO薄膜性能及LED芯片光电性能的影响.结果表明:不通氧气时,ITO薄膜的方块电阻和透过率分别为33 Ω/口和93.1％,LED芯片出现电流拥挤效应,其电光转换效率只有33.3％;氧气体积流量为1 cm3/min时,ITO薄膜的方块电阻和透过率分别为70 Ω/口和95.9％,LED芯片的电流扩展不佳,其正向电压较高,电光转换效率为43.8％;氧气体积流量为0.4 cm3/min时,ITO薄膜的方块电阻和透过率分别为58 Ω/口和95.4％,LED芯片的电流扩展最佳,其亮度最高、正向电压最低,电光转换效率较高,为52.9％.     

Studying the uniformity of the surface resistance of Ti, Al, Ni, Cr, and Au metal films on silicon

Nanosized Ti, Al, Ni, Cr, and Au films were deposited onto KEF-20 (100)-oriented silicon plates with a diameter of 100 mm using the method of thermal evaporation in a vacuum. The value and uniformity of the distribution of the specific electrical resistance of the metal films were estimated by measuring their thickness and surface electrical resistance via the four-probe method. The specific electrical resistance of such films was shown to be considerably higher than for bulk materials. The observed increase in the surface resistance at the edges of the film was due to both the decrease in the thickness of the film and the increase in the specific electrical resistance of the material of the film. The proved regimes were used to obtain metal layers on gallium nitride substrates.     

Influence of oxygen flow rate on microstructural,electrical and optical properties of indium tin tantalum oxide films

Indium tin oxide (ITO) and indium tin tantalum oxide (ITTO) films were deposited on glass substrates by magnetron sputtering technology with one or two targets. Properties of ITO and ITTO films deposited at different oxygen flow rates were contrastively studied. Ta-doping strengthens along the orientation of (400) plane and leads to better crystalline structure as well as to a decrease in surface roughness. The increase in oxygen flow rate increases sheet resistance and reduces carrier concentration, and ITTO films show higher carrier concentration. Certain oxygen flow rates can improve the visible light transmittance of films, but excessive oxygen can worsen the optical properties. The carrier concentration has an important influence on near-IR reflection, near-UV absorption and optical band gap. The optical band gap decreases with the increasing of oxygen flow rate, and ITTO films show wider optical band gap than ITO films. ITTO films prepared by co-sputtering reveal better optical–electrical properties and chemical and thermal stability than ITO films.     

非晶硒合金膜的制备方法研究

基于传统工艺,新研制开发了一套非晶硒合金膜制备的设备和工艺流程。实验采用高真空电阻加热蒸镀方法,已制备出面积为180mm×180mm的非晶硒合金膜并进行了基本特性检测。测试结果表明:所制备的膜非晶化程度高,厚度最大为90μm,厚度分布比较均匀,相对误差在10%以内。所制备的膜满足光电转换膜的基本特性要求。     

快速热退火前后ZnO及ZnO/Al薄膜性质的研究

鉴于直流反应溅射制ZAO膜对反应条件敏感,研究发现,经快速热退火(RTA)处理能放宽对反应条件的要求。实验中ZnO及ZnO/Al薄膜用直流反应磁控溅射法制备。选用金属Zn及金属合金Zn/Al靶。经快速热退火(RTA)后,通过XRD,UV-VIS-NIR分光光度计、四探针测方电阻等,研究了经不同温度RTA后ZnO及ZnO/Al薄膜的结晶状况、方电阻、电阻率、可见光透过率等的变化。对传统热退火和RTA进行了比较:经RTA600℃后电阻率减小5~9个数量级,达1×10–3·cm。     

Characteristics of DC magnetron sputtered ternary cobalt-nickel silicide thin films for ultra shallow junction devices

Ternary cobalt-nickel silicide thin films were synthesized by DC magnetron sputtering from an equiatomic cobalt-nickel alloy target. Grazing incidence XRD, Rutherford back scattering, high-resolution cross-sectional TEM analysis and electrical study were carried out to investigate the formation of silicide, stoichiometry, film thickness, depth profile and sheet resistance of as-deposited and post-deposition annealed films. The ternary silicide layer thickness was calculated from RBS simulated data, which was found to vary 20-43 nm for as-deposited and different vacuum annealed films. A minimum value of sheet resistance 2.73 Ω/sq corresponding to a resistivity of ∼8.4 μΩ-cm was obtained for optimized deposition and annealing conditions.