Three-band white light from InGaN-based blue LED chip precoated with Green/red phosphors

A three-band white light-emitting diode (LED) was fabricated using an InGaN-based blue LED chip that emits 460-nm blue light, and a green phosphor SrGa/sub 2/S/sub 4/ : Eu/sup 2+/ and a red phosphor Ca/sub 1-x/Sr/sub x/S : Eu/sup 2+/ that emit 535-nm green and 615-nm red emissions, respectively, when excited by 460-nm blue light. When the white LED operated in a direct current (DC) 20 mA at room temperature, the Commission Internationale de l'Eclairage chromaticity coordinate (x, y), the color temperature Tc, and the color rendering index Ra are calculated to be (0.3236, 0.3242), 5937 K, and 92.2, respectively. The luminous efficacy of this white LED is about 15 lm/W at a DC 20 mA. With increasing DC from 5.0 to 60 mA, both the coordinates x and y of the white LED trend to increase, and consequently the Tc and the Ra increases and decreases, respectively.     

近紫外芯片激发三基色荧光粉制作的白光LED

使用近紫外半导体芯片激发红绿蓝三基色荧光粉,制作了白光发光二极管（LED）,并研究了其光电特性。结果表明,采用发射峰值波长分别在613、495和451nm的红绿蓝荧光粉,在波长400nm左右半导体芯片激发下的白光LED,其显色指数Ra最大为82;使用YAG荧光粉代替绿色荧光粉后,Ra提高到93。测试结果还表明,当工作电...     

White-light emission from InGaN-GaN multiquantum-welllight-emitting diodes with Si and Zn codoped active well layer

Si and Zn codoped In_xGa_1-xN-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair related emission at 500 nm~560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN bandedge related blue emission. It was also found that the electroluminescence (EL) spectra of such Si and Zn codoped InGaN-GaN MQW LEDs are very similar to those measured from phosphor-converted white LEDs. That is, we can achieve white light emission without the use of phosphor by properly adjusting the indium composition and the concentrations of the codoped Si and Zn atoms in the active well layers and the amount of injection current     

Realization of blue,green and red emission from top-emitting white organic light-emitting diodes with exterior tunable optical films

We developed an approach to realize blue, green and red emission from top-emitting white organic light-emitting diodes (OLEDs) through depositing exterior tunable optical films on top of the OLEDs. Three primary colors for full color display including blue, green and red emission are achieved by controlling the wavelength-dependent transmittance of the multilayer optical films overlaid on the emissive layer. The advantage of such a device configuration is that the emissive color of the OLEDs can be tuned via the exterior optical films which do not affect the electrical characteristics of the device. This may provide a way to realize full color display by using white top-emitting OLEDs.     

Doping-free hybrid white organic light-emitting diodes with fluorescent blue,phosphorescent green and red emission layers

Industrialized white organic light-emitting diodes (OLEDs) currently require host-guest doping, a complicated process necessitating precise control of the guest concentration to get high efficiency and stability. Two doping-free, hybrid white OLEDs with fluorescent blue, and phosphorescent green and red emissive layers (EMLs) are reported in this work. An ultra-thin red phosphorescent EML was situated in a blue-emitting electron transport layer (ETL), while the ultra-thin green phosphorescent EML was placed either in the ETL (Device 1), or the hole transport layer (HTL) (Device 2). Device 2 exhibits higher efficiency and more stable spectrum due to the enhanced utilization of excitons by ultra-thin green EML at the exciton generation zone within the HTL. Values of current efficiency (CE), power efficiency (PE), and CRI obtained for the optimized hybrid white OLEDs fabricated through a doping-free process were of 23.2 cd/A, 20.5 lm/W and 82 at 1000 cd/m², respectively.     

High efficiency fluorescent white organic light-emitting diodes with red,green and blue separately monochromatic emission layers

Highly efficient fluorescent white organic light-emitting diodes (WOLEDs) have been fabricated by using three red, green and blue, separately monochromatic emission layers. The red and blue emissive layers are based on 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) doped N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB) and p-bis(p-N,N-diphenyl-amino-styryl) benzene (DSA-ph) doped 2-methyl-9,10-di(2-naphthyl) anthracene (MADN), respectively; and the green emissive layer is based on tris(8-hydroxyquionline)aluminum(Alq₃) doped with 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,1[H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-1]-one (C545T), which is sandwiched between the red and the blue emissive layers. It can be seen that the devices show stable white emission with Commission International de L’Eclairage coordinates of (0.41, 0.41) and color rendering index (CRI) of 84 in a wide range of bias voltages. The maximum power efficiency, current efficiency and quantum efficiency reach 15.9 lm/W, 20.8 cd/A and 8.4%, respectively. The power efficiency at brightness of 500 cd/m² still arrives at 7.9 lm/W, and the half-lifetime under the initial luminance of 500 cd/m² is over 3500 h.     

White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode

We grew and processed a blue/green two-wavelength light-emitting diode (LED) based on the mixture of two kinds of quantum wells (QW) in epitaxial growth. The X-ray diffraction and photoluminescence measurements indicated that the crystalline structure and the basic optical property of individual kinds of QW are not significantly changed in the mixed growth. The relative electroluminescence (EL) intensity of the two colors depends on the injection current level, which controls the hole concentration distribution among the QWs. At low injection levels, the top green-emitting QW dominates in EL. As the injection current increases, the blue-emitting QWs beneath become dominating. We also coated CdSe-ZnS nanocrystals on the top of the two-wavelength LED for converting blue photons into red light. With the coating of such nanocrystals, the device emits blue, green, and red lights for white light generation.     

An I/SUP 2/L watch chip with direct LED drive

A three function watch circuit using I/SUP 2/L technology has been fabricated on a chip measuring 86 mils/spl times/96 mils. The circuit draws 7-10 /spl mu/A in the run mode and has on-chip segment and digit drivers which are capable of sourcing 15 mA and sinking up to 70 mA, respectively. The low frequency (<1 kHz) transistors in this circuit operate with 5-10 nA base current. A unique four-base divide-by-two circuit, using current starving to implement delays, is the building block for the circuit and its small size (13 mil/SUP 2/) contributes to the small chip size. Segment and digit drivers which draw only 50 nA each in the run mode (no display) also contribute to the low chip current.     

Optical performance of efficient blue/near UV nitropyridine-conjugated anthracene (NAMA) based light emitting diode

9-[(5-nitropyridin-2-aminoethyl) iminiomethyl]-anthracene (NAMA) was synthesized for the first time from the reaction between 9-antracene carboxaldehyde and 2-(2-aminoethylamino)-5-nitropyridine under mild reaction conditions. The structure of the nitropyridine-conjugated anthracene (NAMA) was characterized using ¹H-NMR, ¹³C-NMR and elemental analysis techniques. Furthermore, electroluminescent behavior of the NAMA was investigated by using a material based on polycyclic aromatic hydrocarbons (PAHs) in organic light-emitting diodes (OLEDs). It was observed that the NAMA exhibits blue/near UV emission at 410 nm with a high density signal. The optimized device structure, ITO/CuPc/α−NPD/NAMA/Alq₃/LiF/Al is characterized by blue/near UV electroluminescence (EL) and a high current density with 7735 cd m⁻² maximum brightness at approximately 10.4 V. The emitting color of the device showed the blue/near UV emission (x, y) = (0.14, 0.10) at 277.1 mA cm⁻² in CIE (Commission Internationale de l’Eclairage) chromaticity coordinates with a long operational lifetime (180 h).     

高亮度GaAlAs／GaAs双异质结红色发光二极管

报道了高亮度ＧａＡｌＡｓ／ＧａＡｓ双异质结红色发光二极管的制作和实验结果。该器件在２０ｍＡ工作电流下，最大发光强度约５００ｍｃｄ。     

Broadband emission from InGaAs-GaAs-AlGaAs LED with integratedabsorber by selective-area MOCVD

Three-step selective-area metal organic chemical vapour deposition is used to fabricate a strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED with an integrated absorber. A tapered oxide width mask pattern is used for the active region regrowth to produce an edge emitting device with a continuous variation in the quantum well thickness and composition along its length. A maximum spectral width of 165 nm is obtained     

CMOS photodiode with enhanced responsivity for the UV/blue spectralrange

A new photodiode for the UV/blue spectral range, which can be integrated monolithically with CMOS circuits, is presented. Such optoelectronic integrated circuits (OEICs) with a high sensitivity in the UV/blue spectral range are needed in near-future optical storage systems like digital versatile disk (DVD) or digital video recording (DVR). At 400 nm, our so-called finger photodiode achieves a responsivity of 0.23 A/W corresponding to a quantum efficiency η of 70% [with an antireflection coating (ARC)] and rise and fall times of 1.0 ns and 1.1 ns, respectively. The finger photodiode can be used in the red spectral range, too. At 638 nm, the responsivity is 0.49 A/W (η=95%) and rise and fall times of less than 2.3 ns are achieved. For the integration of the finger photodiode in an industrial 1 μm twin-well CMOS process, only one additional mask is needed in order to block out the threshold voltage implantation in the photo-active region     

Interlayer free hybrid white organic light-emitting diodes with red/blue phosphorescent emitters and a green thermally activated delayed fluorescent emitter

Two different hybrid white organic light-emitting diodes (WOLEDs) with red/blue phosphorescent emitters and a green thermally activated delayed fluorescent (TADF) emitter were designed to develop high efficiency hybrid WOLEDs. One hybrid WOLED (type I) had a device structure with a hybrid emitting layer of green TADF and red phosphorescent emitters stacked on a blue phosphorescent emitting layer and the other hybrid WOLED (type II) had a device architecture with the green TADF emitting layer stacked on a red and blue phosphorescent emitting layer. Efficient energy transfer from the green TADF emitter to the red phosphorescent emitter was observed and balanced white emission could be obtained by optimizing the device structure of the hybrid WOLEDs. A quantum efficiency of 16.2% with a color coordinate of (0.45,0.47) and a quantum efficiency of 18.0% with a color coordinate of (0.37,0.47) were achieved in the type I and type II hybrid WOLEDs, respectively.     

Carbazole and benzimidazole/oxadiazole hybrids as bipolar host materials for sky blue,green, and red PhOLEDs

Two novel bipolar host materials (CBzIm and COxaPh) comprising of a hole-transport (HT) carbazole core functionalized with electron-transport (ET) moieties (benzimidazole/oxadiazole) at C3 and C6 positions have been synthesized. Their thermal, photophysical, electrochemical properties, and carrier mobilities were characterized. Theoretical calculations revealed that the HOMO orbitals were generally delocalized over the hole- and electron-transport moieties for both CBzIm and COxaPh, whereas the LUMO orbitals distribution only involved one benzimidazole moiety in CBzIm instead of fully delocalization over the whole polar moieties for COxaPh, which is consistent with the observation of good hole mobilities for both hosts and better electron mobility for COxaPh over CBzIm. CBzIm with high E_T (2.76 eV) is suitable to serve as a blue phosphor host, where a sky blue phosphor (DFPPM)₂Irpic exhibiting superior properties than those of popular blue emitter FIrpic was used to give highly efficient phosphorescent OLEDs, achieving a maximum external quantum efficiency (η_ext) of 15.7%. The better π-delocalization of COxaPh led to a lower triplet energy (E_T = 2.65 eV), which can be used to accommodate green and red phosphors, providing excellent device performance with η_ext as high as 17.7% for green [(ppy)₂Ir(acac)] and 20.6% for red [Os(bpftz)₂(PPh₂Me)₂], respectively.     

Bandgap engineering in Alq3- and NPB-based organic light-emitting diodes for efficient green, blue and white emission

Bandgap engineering by insertion of a hole-blocking layer (HBL) between the hole-injection layer (HIL) and hole-transporting layer (HTL) for green and blue-emitting organic light-emitting device is shown to improve the current efficiency by 30% and 70%, respectively. The improvement was attributed to a better electron–hole balance in the device. Two different organic materials, 2,9-dimethyl-4,7-diphenylphenanthroline and tris-(8-hydroxyqunoline) aluminum were used as HBL. Variation of HBL and HTL thickness was shown to adjust the current efficiency and operating voltage, respectively. Insertion of a thin HBL between HIL and HTL for blue-emitting devices also resulted in appearance of multicolor emission which was used to produce a pure white light.     

High efficiency phosphorescent white organic light-emitting diodes with an ultra-thin red and green co-doped layer and dual blue emitting layers

Phosphorescent white organic light emitting diodes (WOLEDs) with a multi-layer emissive structure comprising two separate blue layers and an ultra-thin red and green co-doped layer sandwiched in between have been studied. With proper host and dopant compositions and optimized layer thicknesses, high-performance WOLEDs having a power efficiency over 40 lm/W at 1000 cd/m² with a low efficiency roll-off have been produced. Through a systematic investigation of the exciton confinement and various pathways for energy transfer among the hosts and dopants, we have found that both the ultra-thin co-doped layer and two blue emitting layers play a vital role in achieving high device efficiency and controllable white emission.     

Improved out-coupling efficiency from a green microcavity OLED with a narrow band emission source

A highly efficient green microcavity organic light emitting diode was developed using a tetradentate cyclometalated platinum complex, PtN1N, with an intrinsically narrow emission spectral band (FWHM = 18 nm). Devices employing the narrow band emitter in MOLEDs consisting of a single pair of a high index dielectric, Ta₂O₅, and low index dielectric, SiO₂, exhibited a high peak external quantum efficiency of 33.7% compared to a standard OLED in the same device architecture with a peak external quantum efficiency of 25.6%. We have also found in our study that narrow band emission sources in tuned microcavity OLEDs exhibit larger enhancements in light out-coupling efficiency accompanied by small changes in color with respect to viewing angle compared to broad band emitters which is advantageous in display applications.     

Room temperature stimulated emission from a CdTe/CdMgTesuperlattice laser structure in the red spectral range

We have investigated the optical response of a red emitting CdTe/CdMgTe laser structure after optical excitation. For the first time, stimulated emission has been observed in this material system at room temperature, demonstrating the potential for the development of CdTe/CdMgTe laser structures in the visible spectral range. An analysis of our experimental data yields a threshold carrier density of about 3.5·10¹² cm^-2 and a net gain coefficient of about 95 cm^-1 at T=300 K     

Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells

The luminescence spectra of blue and green light-emitting diodes based on In_xGa_1−x N/Al_yGa_1−y N/GaN heterostructures with a thin (2–3 nm) In_xGa_1−x N active layer have been investigated in the temperature and current intervals 100–300 K and J=0.01–20 mA, respectively. The spectra of the blue and green light-emitting diodes have maxima in the interavals ℏω_max=2.55–2.75 eV and ℏω_max=2.38–2.50 eV, respectively, depending on the In content in the active layer. The spectral intensity of the principal band decreases exponentially in the long-wavelength region with energy constant E ₀=45–70 meV; this is described by a model that takes into account the tails of the density of states in the two-dimensional active region and the degree of filling of the tails near the band edges. At low currents radiative tunneling recombination with a voltage-dependent maximum in the spectrum is observed in the spectra of the blue diodes. A model of the energy diagram of the heterostructures is discussed. Fiz. Tekh. Poluprovodn. 31, 1055–1061 (September 1997)     

Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses

Thermal properties of AlGaInP/GaInP MQW red LEDs are investigated by thermal measurements and analysis for different chip sizes and substrate thicknesses. To extract the thermal resistance (R_th), junction temperature (T_j) is experimentally determined by both forward voltage and electroluminescence (EL) emission peak shift methods. For theoretical thermal analysis, thermal parameters are calculated in simulation using measured heat source densities. The T_j value increases with increasing the injection current, and it decreases as the chip size becomes larger. The use of a thin substrate improves the heat removal capability. At 450 mA, the T_j values of 315 K and 342 K are measured for 500 × 500 μm² LEDs with 110 μm and 350 μm thick substrates, respectively. For 500 × 500 μm² LEDs with 110 μm thick substrate, the R_th values of 13.99 K/W and 14.89 K/W are obtained experimentally by the forward voltage and EL emission peak shift methods, respectively. The theoretically calculated value is 13.44 K/W, indicating a good agreement with the experimental results.