Blue organic light-emitting diode with improved color purity using 5-naphthyl-spiro[fluorene-7,9′-benzofluorene]

Novel spiro-type blue host material, 5-naphthyl-spiro[fluorene-7,9′-benzofluorene] (BH-1SN) and dopant material, 5-diphenyl amine-spiro[fluorene-7,9′-benzofluorene] (BH-1DPA) were successfully synthesized, and a blue OLED was made from them. The structure of the blue device is ITO/DNTPD/α-NPD/BH-1SN:5% dopant/Alq₃ or ET4/Al–LiF. Here, α-NPD is used as the hole transport layer, DNTPD as the hole injection layer, BH-1DPA or BD-1 as the blue dopant materials, Alq₃ or ET4 as the transporting layer and Al as the cathode. The blue devices doped with 5% BH-1DPA and BD-1 show blue EL emissions at 444 and 448 nm at 7 V, respectively, and a high efficiency of 3.4 cd/A at 5 V for the device was obtained from BH-1SN:5% BD-1/ET4. The CIE coordinates of the blue emission are 0.15, 0.08 at an applied voltage of 7 V for the device obtained from BH-1SN/5% BH-1DPA/Alq₃.     

顶部发射绿色磷光OLED的制备与瞬态性能研究

用磷光材料Ir(ppy)3制备了高效率顶部发射绿色有机发光二极管(OLED),器件的结构为:ITO/Ag/NPB/Ir(ppy)3(5wt%):TPBI/TPBI/LiF/Al。研究发现与传统的无微腔结构器件相比顶部发射器件的性能有大幅度提高,其最大效率为18cd/A。通过使用F-P腔,器件的电致发光(EL)寿命由7.6μs降低为7.1μs,有效地缓解了效率随电流密度增大而下降的问题。顶部发射器件EL共振的主峰位于505nm处,发射光谱半峰宽(FWHM)窄化为23nm,色纯度为(x=0.122,y=0.671),发射光随探测角度变化较小。最后,分析了其瞬态光电性能变化原因。     

Efficient fluorescent white organic light-emitting devices based on a ultrathin 5,6,11,12-tetraphenylnaphthacene layer

White organic light-emitting devices (OLEDs) were fabricated using a ultrathin layer 5,6,11,12-tetraphenylnaphthacene as the yellow light-emitting layer and p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-ph) doped in 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) matrix as the blue light-emitting layer. The thickness of rubrene ultrathin layer will seriously affect the device performance, and the device with 1 nm rubrene achieves the best performance, with the maximum luminance of 33,152 cd/m² at 11 V and the maximum current efficiency of 8.69 cd/A at 7 V.     

Multifunctional Fluorene‐Based Oligomers with Novel Spiro‐Annulated Triarylamine: Efficient,Stable Deep‐Blue Electroluminescence,Good Hole Injection,and Transporting Materials with Very High Tg

A series of fluorene‐based oligomers with novel spiro‐annulated triarylamine structures, namely DFSTPA, TFSTPA, and TFSDTC, are synthesized by a Suzuki cross‐coupling reaction. The spiro‐configuration molecular structures lead to very high glass transition temperatures (197–253 °C) and weak intermolecular interactions, and consequently the structures retain good morphological stability and high fluorescence quantum efficiencies(0.69–0.98). This molecular design simultaneously solves the spectral stability problems and hole‐injection and transport issues for fluorene‐based blue‐light‐emitting materials. Simple double‐layer electroluminescence (EL) devices with a configuration of ITO/TFSTPA (device A) or TFSDTC (device B)/ TPBI/LiF/Al, where TFSTPA and TFSDTC serve as hole‐transporting blue‐light‐emitting materials, show a deep‐blue emission with a peak around 432 nm, and CIE coordinates of (0.17, 0.12) for TFSTPA and (0.16, 0.07) for TFSDTC, respectively, which are very close to the National Television System Committee (NTSC) standard for blue (0.15, 0.07). The maximum current efficiency/external quantum efficiencies are 1.63 cd A^?1/1.6% for device A and 1.91 cd A^?1/2.7% for device B, respectively. In addition, a device with the structure ITO/DFSTPA/Alq₃/LiF/Al, where DFSTPA acts as both the hole‐injection and ‐transporting material, is shown to achieve a good performance, with a maximum luminance of 14 047 cd m^?2, and a maximum current efficiency of 5.56 cd A^?1. These values are significantly higher than those of devices based on commonly usedN,N′‐di(1‐naphthyl)‐N,N′‐diphenyl‐[1,1′‐biphenyl]‐4,4′‐diamine (NPB) as the hole‐transporting layer (11 738 cd m^?2 and 3.97 cd A^?1) under identical device conditions.     

利用石墨烯掺杂在NPB中的OLED性能研究

采用NPB掺杂石墨烯作为空穴传输层,制备有机电致发光器件(OLED),器件结构为ITO/NPB:Graphene(20wt.%)(50nm)/Alq3(80nm)/LiF(0.5nm)/Al(120nm)。将其与标准器件ITO/NPB(50nm)/Alq3(80nm)/LiF(0.5nm)/Al(120nm)作性能比较,研究石墨烯对OLED性能的影响。结果表明,在NPB中掺杂石墨烯薄层的器件,在同等条件下性能最佳,当电流密度为90mA/cm2时器件电流效率达到最大值3.40cd/A,与标准器件最高效率相比增大1.49倍;亮度在15V时达到最大值10 070cd/m2,比标准器件最大亮度增大5.16倍。     

高效率磷光与荧光相结合的白色有机发光器件

制作了一种白色有机电致发光器件(WOLED)。将红光[Ir(piq)2(acac)]及绿光[Ir(ppy)3]磷光掺杂染料分别掺入到母体CBP中,在2种磷光发光层间插入蓝光材料DPVBi,引入电子传输能力强的BPhen作为电子注入层和空穴阻挡层,通过改变蓝光发光层的厚度,得到了高效率的WOLED,最大电流效率可达17.6cd/A,最大功率效率达13.7lm/W,最大亮度达27525cd/m2,当电压从4V变化到12V时,色坐标从(0.54,0.35)变化到(0.30,0.31),基本处于白光区。器件的特点在于DPVBi的存在阻挡了2种磷光材料间的能量转移,色度可以通过简单地调整DPVBi的厚度,避免使用稀有的蓝光磷光材料和与其相匹配的母体材料,同时又可以保持较高的发光效率。     

基于四取代铜酞菁的有机近红外电致磷光器件

制备了结构为ITO/NPB/TPBI:(4-tert)CuPc/BCP/Alq3/Al的近红外(NIR)有机电致发光器件(OLED),器件在室温下的发射峰位于1110nm附近,来源于(4-tert)CuPc分子的磷光发射,器件的最佳掺杂浓度为14wt%。制备了结构为ITO/NPB/TPBI:(4-tert)CuPc/DCJTB/BCP/Alq3/Al的器件,结果表明,DCJTB层的加入没有改变器件的NIR电致发光(EL)峰位置,而器件的NIR发光强度与没有DCJTB层的器件相比,提高了50%左右,这是由于DCJTB向(4-tert)CuPc进行了有效的能量传输。     

(t-bt)2Ir(acac)超薄层厚度对有机电致发光器件性能的影响

以新型铱配合物黄光磷光染料bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2']iridium(acetylacetonate)[(tbt)2Ir(acac)]为超薄层,制备了结构为indium tin oxide(ITO)/N,N'-bis(naphthalen-1-yl)-N...     

High performance top-emitting organic light-emitting diodes with copper iodide-doped hole injection layer

Efficient top-emitting organic light-emitting diodes were fabricated using copper iodide (CuI) doped 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′-diamine (NPB) as a hole injection layer and Ir(ppy)₃ doped CBP as the emitting layer. CuI doped NPB layer functions as an efficient p-doped hole injection layer and significantly improves hole injection from a silver bottom electrode. The top-emitting device shows high current efficiency of 69 cd/A with Lambertian emission pattern. The enhanced hole injection is originated from the formation of the charge transfer complex between CuI and NPB.     

High stability and low driving voltage green organic light emitting diode with molybdenum oxide as buffer layer

Green organic light emitting diodes (OLEDs) with copper phthalocyanine (CuPc), 4,4′,4″-tris[3-methylphenyl(phenyl)amino]triphenymine (m-MTDATA) and molybdenum oxide (MoO_x) as buffer layers have been investigated. The MoO_x based device shows superior performance with low driving voltage, high power efficiency and much longer lifetime than those with other buffer layers. At the luminance of 100 cd/m², the driving voltage is 3.8 V, which is 0.5 V and 2.2 V lower than that of the devices using CuPc (Cell-CuPc) and m-MTDATA (Cell-m-MTDATA) as buffer layer, respectively. Its power efficiency is 13.6 Lm/W, which is 38% and 30% higher than that of Cell-CuPc and Cell-m-MTDATA, respectively. The projected half-life under the initial luminance of 100 cd/m² is 42,400 h, which is more than 3.8 times longer than that of Cell-m-MTDATA and 24 times that of Cell-CuPc. The superior performance of Cell-MoO_x is attributed to its high hole injection ability and the stable interface between MoO_x and organic material. The work function of MoO_x measured by contact potential difference method and the J–V curves of “hole-only” devices indicate that a small barrier between MoO_x/N,N′-di(naphthalene-1-y1)-N,N′-dipheyl-benzidine (NPB) leads to a strong hole injection, resulting in the low driving voltage and the high stability.     

Charge‐Transporting Polymers based on Phenylbenzoimidazole Moieties

A series of novel styrene functionalized monomers with phenylbenzo[d]imidazole units and the corresponding homopolymers are prepared. These side‐chain polymers show high glass‐transition temperatures that even exceed the corresponding value for the common electron‐transporting material 1,3,5‐tris(1‐phenyl‐1H‐benzo[d]imidazol‐2‐yl)benzene (TPBI). Similar electronic behavior between the polymers and TPBI is shown. The polymers are used as matrices for phosphorescent dopants. The fabricated devices exhibit current efficiencies up to 38.5 cd A^?1 at 100 cd m^?2 and maximum luminances of 7400 cd m^?2 at 10 V with a minimum turn‐on voltage as low as 2.70 V in single‐layer devices with an ITO/PEDOT:PSS anode (ITO = indium tin oxide, PEDOT:PSS = poly(3,4‐ethylenedioxythiophene) doped with poly(styrenesulfonate)) and a CsF/Ca/Ag cathode.     

磷光与荧光相结合的有机白光器件

首先制备了结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/CBP:FIrPIC(10%,30 nm)/5,6,11,12-tetraphenylnaphthacene(rubrene)(x nm/Bphen(40 nm)/LiF(0.8 nm)/Al的器件.此器件效率降低,为提高效率,我们又制备了另一器件,其结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.2 nm)/CBP:FIrPIC(10%,30 nm)/Bphen(40 nm)/LiF(0.8 nm)/Al.此器件亮度效率及色坐标均有所改善.此器件的最大亮度为14 V时,10050 cd/m2,最大效率为8V时,4.59(cd/A),7 V时,1.89(lm/w).1000 cd/m2时的效率约为4.00 cd/A(10 V时,1.25 lm/w).当亮度由1354 cd/m2变到10050cd/m2时,色坐标由(0.33,0.37)变到(0.34,0.37).     

利用 LiF 空穴阻挡层提高有机发光二极管效率

通过引入LiF,明显提高了基于八羟基喹啉铝双层有机发光二极管的发光效率.2 nm 厚的 LiF 空穴阻挡层可将器件的发光效率从 2.6 cd/A 提高到 6.3 cd/A,研究结果表明,LiF 空穴阻挡层可以有效调节空穴的注入与传输,平衡器件中的空穴与电子,提高有机发光二极管的发光效率.     

Organic alternating current electroluminescence device based on 4,4′-bis(N-phenyl-1-naphthylamino) biphenyl/1,4,5,8,9,11-hexaazatriphenylene charge generation unit

An organic alternating current electroluminescence (OACEL) device based on 4,4′-bis(N-phenyl-1-naphthylamino) biphenyl (NPB)/1,4,5,8,9,11-hexaazatriphenylene (HAT-CN)/tris(8-hydroxy-quin-olinato) aluminum (Alq₃) doped with cesium carbonate (Cs₂CO₃) internal charge generation unit is demonstrated. Maximum luminance of 299 cd/m² is observed for Alq₃ doped with 10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H, 11H-(1) benzopyropyrano (6,7-8-I,j)quinolizin-11-one (C545T) fluorescent emission layer when driven with a peak–peak voltage of 80 V at 120 kHz. The key charge-generation role of NPB/HAT-CN interface is studied experimentally. Furthermore, influence of evaporation sequence of this internal charge generation unit on OACEL performance is investigated. This work demonstrated that the undoped charge generation unit – NPB/HATCN, can also be a good candidate for charge generation unit of OACEL device.     

以Liq:rubrene为单发光层的白色OLED的制备与研究

以ITO玻璃基片为衬底,8-羟基喹啉锂(Liq)掺杂红荧烯 (Rubrene)作为单一发光层,制备结构为ITO/PTV:TPD/Liq:Rubrene/Alq3/Al的白色有机电致发光器件(OLED),其量度达到3 120 cd/m2.对4种不同掺杂浓度器件进行比较,分析了掺杂剂对器件发光亮度的影响,并对上述器件的发光和电学性能进行了研究和探讨.     

Dual enhancing properties of LiF with varying positions inside organic light-emitting devices

A multilayer organic light-emitting device (OLED) has been fabricated with a thin (0.3 nm) lithium fluoride (LiF) layer inserted inside an electron transport layer (ETL), aluminum tris(8-hydroxyquinoline) (Alq₃). The LiF electron injection layer (EIL) has not been used at an Al/Alq₃ interface in the device on purpose to observe properties of LiF. The electron injection-limited OLED with the LiF layer inside 50 nm Alq₃ at a one forth, a half or a three forth position assures two different enhancing properties of LiF. When the LiF layer is positioned closer to the Al cathode, the injection-limited OLED shows enhanced injection by Al interdiffusion. The Al interdiffusion at least up to 12.5 nm inside Alq₃ rules out the possible insulating buffer model in a small molecule bottom-emission (BE) OLED with a thin, less than one nanometer, electron injection layer (EIL). If the position is further away from the Al cathode, the Al diffusion reaches the LiF layer no longer and the device shows the electroluminescence (EL) enhancement without an enhanced injection. The suggested mechanism of LiF EL efficiency enhancer is that the thin LiF layer induces carrier trap sites and the trapped charges alters the distribution of the field inside the OLED and, consequently, gives a better recombination of the device. By substituting the Alq₃ ETL region with copper phthalocyanine (CuPc), all of the electron injection from the cathode of Al/CuPc interface, the induced recombination at the Alq₃ emitting layer (EML) by the LiF EL efficiency enhancer, and the operating voltage reduction from high conductive CuPc can be achieved. The enhanced property reaches 100 mA/cm² of current density and 1000 cd/m² of luminance at 5 V with its turn-on slightly larger than 2 V. The enhanced device is as good as our previously reported non-injection limited LiF EIL device [Yeonjin Yi, Seong Jun Kang, Kwanghee Cho, Jong Mo Koo, Kyul Han, Kyongjin Park, Myungkeun Noh, Chung Nam Whang, Kwangho Jeong, Appl. Phys. Lett. 86 (2005) 213502].     

一种新型蓝色有机电致发光器件及其发光机理

利用5,6,11,12-tetraphenylnaphthacene(Rubrene)超薄层制备了一种蓝光有机电致发光器件(OLED),器件结构为ITO/N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,18-biphenyl)-4,4'-diamine(NPB)(50nm)/2,9-d...     

具有复合空穴传输层的高效低压有机电致发光器件

报道了用m-MTDATA掺杂NPB作复合空穴传输层(c-HTL)的高效率、低电压有机电致发光器件(OLED),器件的最高发光效率达到了5.3cd/A,比NPB作HTL的器件(3.4cd/A)提高了约50%.这是由于c-HTL具有较低的空穴迁移率,改善了发光层中两种载流子的平衡,从而提高了器件性能.进一步在ITO与c-H...     

Voltage independent white emission from all solution processed polymer light-emitting diode with dual emitting layers spaced by an alcohol soluble conjugated polymer as interlayer

Spatial control of recombination zone in multilayer white polymer light emitting diode (WPLED) is highly desirable for stable white-light emission. In this work, the utilization of 18-crown-6 (Cn6)-grafted polyfluorene (PFCn6) as an interlayer in between two emitting layers is demonstrated to control the recombination zones for the multilayer WPLED with β-phase and rubrene doped poly(9,9-di-n-octylfluorene) (PFO) as blue- and yellow-emitting layers, respectively. The device gives the maximum brightness of 15,695 cd/m² and maximum efficiency 5.43 cd/A, accompanying with voltage-independent electroluminescence spectrum having invariant Commission Internationale de L’Eclairage (CIE) coordinates of (0.32, 0.36). The performance with the luminance efficiency 5.43 cd/A and voltage independent white emission is the highest record among the reported multilayer WPLED.     

Interfacial charges and electric field distribution in organic hetero-layer light-emitting devices

The electric field distribution in organic hetero-layer light-emitting devices based on N,N^′-diphenyl-N,N^′-bis(1-naphtyl)-1,1^′-biphenyl-4,4^′-diamine (NPB) and 8-tris-hydroxyquinoline aluminium (Alq₃) has been investigated under different bias conditions using capacitance–voltage measurements. Although this method yields primarily information on the differential capacitance, the data give clear evidence for the presence of negative interfacial charges with a density of 6.8×10¹¹e cm⁻² at the NPB/Alq₃ interface at large reverse bias. This leads to a jump of the electric field at the interface and a non-uniform field distribution in the hetero-layer device.