等离子钇钨钼共渗表面冶金高速钢的研究

利用双层辉光等离子渗金属技术,以稀土钇、钨、钼作为源极,在Q235钢表面进行钇钨钼共渗,形成均匀致密合金扩散层,然后进行固体渗碳、淬火及低温回火处理,形成钇钨钼表面高速钢.用显微硬度仪检测表面高速钢的硬度,通过SEM、XRD观察分析钇钨钼高速钢形貌和相结构,并采用GZTC-01型磨损试验机对钇钨钼高速钢进行耐磨性实验.研究结果表明:进行等离子钇钨钼共渗,可获得数十微米的共渗合金层,共渗合金层为均匀固溶体层,组织形貌为柱状态晶体,基体与渗层之间有明显的反应扩散分界线,渗层与基体是冶金结合,无剥落现象,具有较好的成分和结构梯度;共渗合金层渗碳淬火及回火后,无共晶碳化物产生,组织为隐晶马氏体上分布均匀的细小、弥散碳化物,碳化物尺寸小于1 μm,稀土钇在晶界富集并形成颗粒状碳化物;渗碳淬火及回火后钇钨钼表面高速钢表面硬度为1 000 HV0.1左右,比单纯钨钼表面高速钢表面硬度高出200 HV0.1;钇钨钼表面高速钢试样的耐磨性是表面钨钼高速钢试样的2～4倍,是T10钢750 ℃淬火回火处理工艺试样的10倍左右.     

降低DLC薄膜应力的方法研究

为了沉积出高硬度、低应力、高膜-基结合强度的类金刚石硬质薄膜,利用脉冲电弧离子镀技术在高速钢基底上制备类金刚石薄膜,采用退火、增加Ti过渡层、Ti离子轰击等方法减小DLC薄膜应力.结果表明:单层DLC薄膜的应力可达7.742 GPa;以Ti为过渡层的DLC薄膜的应力减小为2.027 GPa;对Ti/DLC薄膜进行退火热处理,薄膜应力减小到0.359GPa.利用Ti作过渡层,并且对薄膜进行退火处理,可以使DLC薄膜产生的高应力在Ti层中得到明显减小,提高膜-基结合力,增加硬度.     

不锈钢(3Cr13)镀类金刚石薄膜的研究

利用脉冲真空电弧离子镀技术在3Cr13不锈钢基底上制备类金刚石(DLC)薄膜,采用X射线光电子能谱技术分析DLC薄膜中sp3键及sp2键含量和组分.采用显微硬度计测试了薄膜的显微硬度,利用扫描电镜测试了膜的表面形貌.划痕仪测试了薄膜与不锈钢基底的结合强度.结果表明:所镀制的类金刚石薄膜品质优良,类金刚石中sp3键含量较高,sp3/sp2=1.63,具有良好的表面形貌,在不锈钢上沉积DLC膜后明显提高了不锈钢的硬度,Ti过渡层的引入明显的改善了膜与不锈钢之间的结合强度.     

采用Cu/Ti过渡层沉积金刚石薄膜刀具的界面结构

研究了硬质合金基底上Cu/Ti作过渡层化学气相沉积(CVD)金刚石薄膜的界面特性.利用激光Raman谱分析了过渡层不同生长阶段金刚石薄膜的质量的影响.采用SEM、EDS对金刚石薄膜硬质合金刀具横截面的结构进行了研究.结果表明:基体中的Co被Cu/Ti作过渡层有效的抑制住;Cu向基体内的扩散改善了基体的性能,提高了界面层金刚石薄膜的质量;Ti的引入促进了金刚石的形核,减少了界面处晶粒间的空隙,提高了金刚石薄膜与基体表面的实际接触面积.     

微波等离子体条件下硬质合金刀片中钴的扩散规律对金刚石涂层的影响

利用化学脱钴处理后的硬质合金刀片在微波等离子体条件下沉积金刚石薄膜,用电子能谱仪(EDS)检测发现经化学酸蚀处理后的硬质合金刀片表面的钴含量基本在0.3%左右,对于金刚石膜的形核及生长几乎没有大的影响,膜层致密、晶型良好;但是在长时间的高温沉积过程中,钴逐渐向表面扩散,如900℃条件下10h后刀片表面钴含量可达2.02%,可能对金刚石薄膜与基体之间的附着产生很大的影响,导致金刚石薄膜刀具使用使命的降低。     

采用Cu／Ti过渡层沉积金刚石薄膜刀具的界面结构

研究了硬质合金基底上Cu／Ti作过渡层化学气相沉积(CVD)金刚石薄膜的界面特性。利用激光Ra—man谱分析了过渡层不同生长阶段金刚石薄膜的质量的影响。采用SEM、EDS对金刚石薄膜硬质合金刀具横截面的结构进行了研究。结果表明：基体中的Co被Cu／Ti作过渡层有效的抑制住；Cu向基体内的扩散改善了基体的性能，提高了界面层金刚石薄膜的质量；Ti的引入促进了金刚石的形核，减少了界面处晶粒间的空隙，提高了金刚石薄膜与基体表面的实际接触面积。     

CVD条件对金刚石薄膜/钼基体界面层的影响

用微波等离子体化学气相沉积法(MPCVD)在Mo基片上沉积金刚石薄膜时,界面层钼的碳化程度与初始沉积条件有关.利用XRD,SEM,EDS对界面层进行的研究表明:在化学气相沉积的开始阶段,较低的甲烷浓度有利于碳向基体内的扩散从而让表面的Mo充分碳化,形成富含Mo2C的界面层.甲烷浓度过高时有利于金刚石的形核而不利于碳向基体内的扩散.在金刚石薄膜的生长过程中,碳向基体内的扩散很少,界面层的组成结构保持不变.     

CVD条件对金刚石薄膜／钼基体界面层的影响

用微波等离子体化学气相沉积法（MPCVD）在Mo基片上沉积金刚石薄膜时,界面层钼的碳化程度与初始沉积条件有关,利用XRD,SEM,EDS,对界面层进行的研究表明：在化学气相沉积的开始阶段,较低的甲烷浓度有利于碳向基体内的扩散从而让表面的Mo充分碳化,形成富含Mo2C的界面层,甲烷浓度过高时有利于金刚石的形核而不利于碳向基体内的扩散,在金刚石薄膜的生长过程中,碳向基体内的扩散很少,界面层的组成结构保持不变。     

燃焰法CVD金刚石薄膜生长过程的实验研究

采用燃焰法在硅基片表面进行了金刚石薄膜沉积实验．介绍了用金刚石微粉研磨基片表面对金刚石成核及生长的影响．根据不同沉积时间基片表面的扫描电子显微照片，分析了金刚石薄膜的生长过程，得出了金刚石薄膜的生长过程是以岛状生长模式形成连续膜的结论．     

铝基底上SiOx陶瓷膜层的CVD制备及结构性能

本研究采用常压化学气相沉积(CVD)的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。介绍了陶瓷膜层的制备工艺及设备。通过SEM、TEM观察了该膜层的形貌，并用XPS测定了膜层的成分，用TEM分析了陶瓷膜层的结构特征。通过拉伸实验、划痕实验及弯曲实验考察了陶瓷膜层与铝基底的结合性能，结果表明，膜层与基底的结合非常好。     

大面积金刚石膜生长过程中的缺陷和内应力

采用甲烷和氢气作为气源,在直径为50 mm的抛光单晶硅片上,利用新型微波等离子体化学气相沉积(MPCVD)装置制备出金刚石膜.用扫描电子显微镜观测金刚石膜的表面形貌,利用激光Raman光谱表征金刚石膜的质量以及X射线衍射检测金刚石膜的成分和晶界缺陷.结果表明V(CH4)/V(H2)为1%,基片温度为845℃时,生长金刚石膜的质量较好,并且具有完整的晶体形貌,但是扫描电子显微镜图×5 000倍时,观察到金刚石膜中明显的晶体缺陷存在,同时X射线衍射图表明金刚石膜的内应力较大.     

辅助气体对分阶段制备金刚石膜的影响

采用形核 甲烷/氢气生长-辅助气体/甲烷/氢气生长的新工艺,在镜面抛光的单晶硅片上制备了金刚石膜,并用扫描电子显微镜和激光拉曼光谱等测试方法对薄膜的表面形貌和质量性能进行了表征;研究了添加辅助气体对已有金刚石晶型生长的影响.结果表明:以甲烷/氢气为气源时,金刚石膜生长率一般为1.8 μm/h,当分别加入氧气、二氧化碳、氮气时,其生长率都有所提高,其中加入二氧化碳时,其生长率是甲烷/氢气为气源的3倍多,但是加入氩气时,其生长率下降;通过新工艺,在加入氮气或氩气时,第一生长阶段为微米,而第二生长阶段为纳米尺寸,最后制备出具有微/纳米双层复合金刚石膜.     

采用石墨碳源沉积金刚石薄膜

采用固相石墨为碳源，使用微波等离子体化学气相沉积（MPCVD）法，在Si(111)上沉积高质量的金刚石薄膜。研究了在气相碳源浓度处于不饱和状态时，沉积气压和石墨温度对生长速率的影响。利用SEM，XRD，红外光谱分析薄膜表面形貌和质量。结果表明高质量的金刚石薄膜可在H2激发而生的封闭的等离子体气氛下合成，高的有沉积气压和石墨温度会导致高的气相碳源浓度，从而有利于提高薄膜的生长速率，而低的气相碳源浓度有利于沉积薄膜的质量的提高。     

Nanodiamond films deposited at moderate temperature on pure titanium substrate pretreated by ultrasonic scratching in diamond powder suspension

Nanocrystalline diamond （NCD） film deposition on pure titanium and Ti alloys is extraordinarily difficult because of the high diffusion coefficient of carbon in Ti, the large mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty to achieve very high nucleation density. In this investigation, NCD films were successfully deposited on pure Ti substrate by using a novel substrate pretreatment of ultrasonic scratching in a diamond powder-ethanol suspension and by a two-step process at moderate temperature. It was shown that by scratching with a 30-μm diamond suspension for 1 h, followed by a 10-h diamond deposition, a continuous NCD film was obtained with an average grain size of about 200 nm. Detailed experimental results on the preparation, characterization, and successful deposition of the NCD films on Ti were discussed.     

纳米针状金刚石膜的制备

利用高功率微波等离子体化学气相沉积方法在硅衬底上沉积了多晶金刚石薄膜,然后利用电子束蒸发方法在金刚石薄膜表面上沉积了5 nm厚的Pt薄膜.利用Pt的自组织化效应,再通过氢等离子体照射、氧等离子体刻蚀、王水处理等手段,使金刚石薄膜表面形成了纳米针.利用拉曼光谱和扫描电子显微镜(SEM)表征金刚石薄膜的结构,拉曼光谱显示在1 315 cm^-1处出现纳米金刚石特征峰,SEM显示纳米针均匀地直立在金刚石薄膜表面,每平方厘米大约含有10⁸个纳米针,纳米针的平均高度约为1 μm.     

Preparation and Characterization of High Quality Diamond Films by DC Arc Plasma Jet CVD Method

OneoftheimpoftantprogressesinCVDdiamondresearchesisthepreparationofopticalgradetransparentdiamondfilmsinrecentyears[l-2].ThephysicalandchemicalpropertiesofthesefilmsarenearlythesameasthatofthenaturaltypeIladiamond,soopticalgradediamondfilmshavepotent...     

Experimental investigation and numerical simulation on interfacial carbon diffusion of diamond tool and ferrous metals

We numerically simulated and experimentally studied the interfacial carbon diffusion between diamond tool and workpiece materials. A diffusion model with respect to carbon atoms of diamond tool penetrating into chips and machined surface was established. The numerical simulation results of the diffusion process reveal that the distribution laws of carbon atoms concentration have a close relationship with the diffusion distance, the diffusion time, and the original carbon concentration of the work material. In addition, diamond face cutting tests of die steels with different carbon content are conducted at different depth of cuts and feed rates to verify the previous simulation results. The micro-morphology of the chips is detected by scanning electron microscopy. Energy dispersive X-ray analysis was proposed to investigate the change in carbon content of the chips surface. The experimental results of this work are of benefit to a better understanding on the diffusion wear mechanism in single crystal diamond cutting of ferrous metals. Moreover, the experimental results show that the diffusion wear of diamond could be reduced markedly by applying ultrasonic vibration to the cutting tool compared with conventional turning.     

Synthesis of boron-doped diamond/porous Ti composite materials — Effect of carbon concentration

Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique.The morphology variation of highly boron-doped diamond films grown on porous titanium substrates was investigated,and the effects of carbon concentration on nucleation density and diamond growth were also studied.The continuous change of surface morphology and structure of diamond film were characterized by scanning electron microscopy.The structures of diamond film and interlayer were analyzed by X-ray diffraction.The quality of boron-doped diamond film was confirmed by visible Raman spectroscopy.The experimental results reveal that surface morphology and quality of boron-doped diamond films are various due to the change of carbon concentration.The thickness of intermediate layer decreases with the carbon concentration increasing.     

Preparation and characterization of ultrananocrystalline diamond films in H_2/Ar/CH_4 gas mixtures system with novel filament structure

Diamond films were prepared by hot filament chemical vapor deposition(HFCVD) in a gas mixtures system of methane, argon and hydrogen. The composition and morphology in different deposition pressures and filament structures were investigated, as well as the friction and wear-resistant properties. The sp3-bonded content was measured and nano-mechanics properties were also tested. Results of atomic force microscopy and X-ray photoelectron spectroscopy show that the diamond films whose surface roughness is less than 10 nm and sp3-bonded content is greater than 70% can be prepared by bistratal filament structure with optimized proportion of Ar. It is also shown that the friction coefficient of diamond films is 0.13 and its wear-resistant property is excellent. Nano-mechanics of films shows that its elastic modulus is up to 650 MPa and hardness can reach higher than 60 GPa. The diamond films with excellent performance have a broad application prospect in microelectromechanical systems(MEMS).