Analysis on the lateral resolution of optical scanning holography system based on random phase encoding using restricted pupils

In this paper, we analyze the point spread function of optical scanning holography (OSH) system based on random phase encoding (RPE-OSH) with restricted pupils and compare the lateral resolution of RPE-OSH system with the one of conventional OSH system by the definition of Rayleigh criterion. The results show that the main lobe width of RPE-OSH system is much narrower than that of the conventional OSH system under the same conditions; thus, the reconstructed image in RPE-OSH system has a higher lateral resolution and reserves more detailed information. This conclusion is verified by numerical simulations of the Cymbella cymbiformis image reconstruction.     

六角相GaN外延膜的高分辨X射线衍射分析研究

通过实例介绍运用高分辨X射线衍射分析技术对GaN异质外延薄膜材料的微结构进行研究，希望能获得不同缓冲层生长与优化工艺以及结构模型对其结构特性参数影响方面的信息，为GaN材料和器件制备者提供有用的参考。     

数字同轴和数字离轴全息系统分析

利用最高空间频率分析法,通过逐点分析记录在 CCD 上的空间频率信息,研究了物体可允许记录的最大横向尺寸、最小记录距离、全息图的信息量、空间分辨力、再现像的横向分辨力、轴向分辨力及散斑大小,并得到了数学表达式。理论分析和实验结果表明,数字同轴全息系统放宽了对 CCD 分辨力的要求,有较高的分辨力,较低的散斑噪声、灵活、简单的系统结构及较高的 CCD 空间带宽利用率,在增强系统性能方面要优于数字离轴全息系统。这一研究为数字全息系统的设计和操作提供了一定的理论和实验指导。     

In-situ X-ray studies of organometallic vapor phase epitaxy growth

In this paper we present an overview of the use of X-ray measurements to determine the atomic mechanisms of organometallic vapor phase epitaxy (OMVPE). Detailed information about OMVPE processes has been difficult to obtain because of the high pressure, chemically reactive environment present during growth. X-ray scattering measurements using very intense synchrotron X-ray sources have been uniquely productive in determining the structure of surfaces during OMVPE growth. For example, surface smoothness, step ordering, growth modes, growth rates and surface reconstructions have been determined. In addition, X-ray spectroscopy measurements have revealed much about the complicated gas phase behavior in the OMVPE reactor. From these scattering and spectroscopy measurements, a more complete model of OMVPE growth is being developed.     

High resolution X-ray diffraction studies of real structure of nearly perfect single crystals

Real structure together with composition and elemental purity of single crystals controls their properties. This paper reviews recent work carried out at the National Physical Laboratory on application of high resolution X-ray diffractometry, topography and diffuse X-ray scattering for direct observation and characterization of real structure of single crystals of silicon, gallium arsenide, diamond and LiNbO₃. A series of six multicrystal X-ray diffractometers have been designed, developed and fabricated indigenously. The most versatile of these systems is a five crystal X-ray diffractometer with state-of-the-art level resolution. These techniques and equipments have been applied in studying several interesting problems. Even in dislocation-free crystals of silicon, remarkable differences in the defect structure have been observed if the growth method was changed from float zone to Czochralski. Study of effect of externally applied electric fields and ion implantation on real structure of crystals has yielded interesting results. Images of ‘filaments’ which show nonhomogeneous distribution of electric current through semiconductors and insulators have been recorded for the first time in high resolution traverse topographs. Diffracted X-ray intensities could be modified by externally applied electric fields. It has been shown that implantation of BF ₂ ⁺ ions in silicon for producing shallow junctions does not produce homogeneous distribution of boron. The impurity is partially in clustered form. Biaxial stress introduced by thin depositions in substrate crystals are of considerable applied concern. The value and nature of stress have been determined in a number of systems. Typical results obtained on GaAs: multilayer metallizations are described. Also, degradation of perfection of substrates has been monitored. This work has shown that the stress is not homogeneously distributed and is quite anisotropic. A new high resolution X-ray diffraction technique has been developed for direct observation and study of forward diffracted X-ray beam and anomalous transmission of X-rays through ‘thin’ diamond crystals of varying degrees of perfection.     

3D atomic imaging of SiGe system by X-ray fluorescence holography

X-ray fluorescence holography (XFH) provides three-dimensional atomic images around specific elements without any assumption of the structural model. Six X-ray holograms of Si_0.8Ge_0.2/Si at different energies were measured at the synchrotron radiation facility of SPring-8. Si and/or Ge atoms within 0.7 nm of a radius were clearly visible in the atomic images reconstructed from the holograms. From these images, slight displacements of the images at each shell in between Si_0.8Ge_0.2/Si and the Ge bulk were distinctly revealed. This demonstrated that the XFH method has a great potential to quantitatively analyze a three-dimensional local lattice structure in epitaxial crystals.     

原子力显微镜与X射线光电子能谱对ITO表面改性的研究

采用氧气等离子体(OP)处理对氧化铟锡(ITO)薄膜进行表面改性,通过原子力显微镜(AFM)、X射线光电子能谱(XPS)和四探针等测试手段对薄膜样品进行表征,研究了OP处理对ITO表面性质的影响.实验结果表明OP处理有效去除了ITO表面的污染物,优化了ITO表面的化学组分,降低了ITO表面的粗糙度和方块电阻,改善了ITO的表面形态.与此同时,通过XPS监测研究了OP处理后ITO表面化学组分随老化时间的变化,结果显示经过优化的化学组分随老化时间增加而逐渐退化.另外,以OP处理后经过不同老化时间的ITO样品作为空穴注入电极,制备了有机电致发光器件(OELD),通过测试器件的电压-电流-亮度特性,进一步研究了ITO表面性质对于OELD光电性能的影响.     

On the feasibility of high spatial resolution superconducting X-ray detectors

We discuss a class of superconducting particle/radiation detectors in which the readout is by magnetic means. Even a small energy deposition can change the state of a superconductor, leading to a drastic change of its electromagnetic properties. To increase the detector sensitivity, a highly granulated superconducting medium is used. Millions of physically separated sensors are read out in parallel by only a few channels of very sensitive D.C.-SQUID based electronics. We present the mathematical formulation of the problem and discuss how the excellent signal-to-noise ratio obtained using SQUIDs permits us to determine particle/photon localization.     

Analysis of powder X-ray diffraction resolution using collimating and focusing polycapillary optics

Focusing X-ray optics can be used to increase the intensity onto small samples, greatly reducing data collection time. Typically, the beam convergence is restricted to avoid loss of resolution, since the focused beams broaden the resulting powder diffraction rings. However, with smooth Gaussian peaks, the resolution defined by the uncertainty in peak location can be much less than the peak width. Polycapillary X-ray optics were used to collimate and focus X-rays onto standard inorganic powder diffraction samples. Comparisons were made of system resolution and diffracted beam intensity with and without focusing and collimating optics using a standard small spot rotating anode system in point source geometry. The area detector and optics also allowed for the use of a low power 60 W source, without increasing either the collection time or the peak center error compared to the rotating anode no optic case. Resolution and intensity were in good agreement with those obtained from a simple geometrical model developed for the optics, which allows for system design and optimization for the desired sample characteristics. Foils and powders were used to model thin film samples while allowing both reflection and transmission measurements to more effectively verify theoretical modeling of beam parameters.     

Broadband holography applied to eddy current imaging by using signals with multiplied phases

In this paper an eddy current imaging method for nondestructive testing purposes is presented which utilizes the concept of broadband holography. An eddy current coil which is used simultaneously as an antenna for eddy current generation and as a probe for detection of response of interaction between eddy currents and flaws, respectively, is moved along a synthetic aperture during the imaging procedure generating synthetic eddy current pulses by scanning a certain frequency range. In terms of wave propagation phenomena the penetration depth (range) of eddy currents in conducting media is small compared to the equivalent wavelength of this type of fields. Therefore, adequate resolution can only be obtained in the reconstructed cross-sectional images by phase multiplication of received multifrequency signals, which is equivalent to a fictitious reduction of wavelengths. Experimental results verify the imaging capability of this method with improved resolution compared to conventional eddy current testing methods.     

低能电子投射全息的计算机模拟和数值重现研究

点源发出的低能量电子波经过样品的散射后,带有物体原子结构信息的散射波(物波)和未被散射的电子波(参考波)在收集平面上相互干涉形成的电子全息图即为低能电子投射全息图.本文在合理的物理模型下,以石墨的晶体结构为试样,通过计算机模拟的方法,首次对低能电子投射全息进行了研究,讨论了一些关键参数对晶体结构电子全息的重现像和分辨率的影响,并且实现了晶体结构三维数值重现,讨论了三维重现的效果.     

俄歇电子全息的计算机模拟研究和数值重现

原子的芯能级电子吸收能量后被激发 ,经过退激发过程发射出的俄歇电子波在传播过程中被周围的原子散射 ,带有周围原子结构信息的散射波 (物波 )与未被散射的电子波 (参考波 )相干涉形成的衍射图即俄歇电子全息图 ,通过全息图的重现 ,可获得原子级分辨率的三维结构信息。本文在合理的物理模型下 ,以Cu单晶以及高温超导YBCO中的Y原子近邻的一些原子簇为计算实例 ,首次就受激原子周围单层近邻原子散射和多层原子散射产生的俄歇电子全息进行了计算机模拟和数值重现 ,获得了三维晶格结构参量 ,并讨论了不同原子序数的原子在全息图形成及重现中的作用。本工作有助于材料微结构的研究     

小波变换在数字全息中的应用

数字全息是通过数字重构来同时获取被测物强度与相位,但记录时的激光散斑效应和重构时的零级衍射斑成为了这种方法的瓶颈。将小波变换引入数字全息,可直接消除零级衍射像,无需相移,也不需要采集多幅图像;小波非线性滤波器还可消除散斑噪声。模拟和实验结果表明,小波分析的引入,可以消除零级衍射影响,改善图像质量,提高测试分辨率。     

曝光量对DCG中Cr2P_(3/2)XPS谱的影响的研究

通过对不同曝光量的重铬酸盐明胶(DCG)中的Cr2P3／2XPS（X射线光电子能谱）的规定发现，Cr2P3／2XPS谱随曝光量呈规律性的变化：在0～195mJ／cm2曝光量范围内，它的1／5高宽度（FWFM，即：thefullwidthatfifthmaximum）和576．4eV附近的峰的相对强度先随曝光量增加而增大，到达极大值后又随曝光量的增加而减小；相反，它的579．4eV和577．4eV附近的两个峰的相时强度却是先随曝光量的增加而减小，达到极小值后又随曝光量的增加而增大。对这些不同曝光量的DCG膜定性地水洗处理后，曝光量为130mJ/cm2的全息图最均匀、明亮；曝光量为195mJ／cm2的全息图衍射效率很低，且有残余黄褐色。根据这些实验结果和固态膜反应的特点，就曝先对DCG微观结构引起的变化作了分析，确定出了贡献各峰的化合物状态并科学准确地找到了Cr2P3／2XPS谱随曝光量成规律性变化的本质原因是作为潜影中心的二氧化铬（576．4eV附近的铬）严格地受曝光量的制约。这个结论的得出，为制作理想的全息图选择合适的曝光量提供了理论依据。即：576．4eV附近的峰有最大相对强度的曝光量为最佳曝光量。     

A CCD area detector for X-ray diffraction under high pressure for rotating anode source

Details of a two-dimensional X-ray area detector developed using a charge coupled device, a image intensifier and a fibre optic taper are given. The detector system is especially optimized for angle dispersive X-ray diffraction set up using rotating anode generator as X-ray source. The performance of this detector was tested by successfully carrying out powder X-ray diffraction measurements on various materials such as intermetallics AuIn₂, AuGa₂, high Z material Pd and low Z scatterer adamantane (C₁₀H₁₆) at ambient conditions. Its utility for quick detection of phase transitions at high pressures with diamond anvil cell is demonstrated by reproducing the known pressure induced structural transitions in RbI, KI and a new structural phase transition in AuGa₂ above 10 GPa. Various softwares have also been developed to analyze data from this detector. Paper presented at the 5th IUMRS ICA98, October 1998, Bangalore     

Development of picosecond time resolution optical and X-ray streak cameras

We describe the development of an optical and an X-ray streak camera with picosecond time resolution. The entire peripheral electronics and testing systems have been developed indigenously. Both the streak cameras provide ∼ 15 mm/1 ns streak rate with a sweep voltage of ∼ 1 kV amplitude and rise time of 1 ns. The time and spatial resolution of the optical streak camera have been found to be ∼ 17 ps and 100 μm respectively. The sweep pulse generator developed for this purpose provides a step pulse of rise time ≦1 ns and amplitude ∼ 2 kV. The laser diode used for testing the optical streak camera provides multiple pulsation when the pump current is increased beyond a critical threshold.     

Detailed studies of molecular conductance using atomic resolution scanning tunneling microscopy

Atomically resolved scanning tunneling microscopy and spectroscopy (STM/STS) have been used to carefully examine the relationship between molecular conductivity and the adsorption state of various organic molecules on silicon surfaces. We show that the particular configuration of styrene and cyclopentene molecules on silicon affects the conductivity of the molecules. Detailed correlation of STM images with point specific current-voltage spectroscopy reveal that observed negative peaks are due to random configuration changes driven by inelastically scattered electrons and not due to tuned alignment of molecule and electrode levels. These random processes, which include molecular rearrangement, desorption, and/or decomposition occur with increasing frequency at larger voltage and current settings.     

XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films

Aluminum-doped zinc oxide transparent conducting films are prepared by spray pyrolysis at different dopant concentrations. These films are subsequently characterized by X-ray diffractometric and X-ray photoelectron spectroscopic (XPS) techniques. The results are compared with those obtained from pure zinc oxide films prepared under identical conditions. X-ray diffraction measurements show an increase in lattice parameters (c and a) for aluminum-doped films while their ratio remains the same. This study also indicates that within the XPS detection limit the films are chemically identical to pure zinc oxide. However, a difference in the core-electron line shape of the Zn 2p_3/2 photoelectron peaks is predicted. An asymmetry in Zn 2p_3/2 photoelectron peaks has been observed for aluminium-doped films. The asymmetry parameters evaluated from core-electron line-shape analysis yield a value of the order of 0.04±0.01. The value is found to lie between those obtained for pure zinc oxide and has been attributed to the presence of excess zinc in the films.     

X-ray mirrors on flexible polymer substrates fabricated by atomic layer deposition

Atomic layer deposition (ALD) techniques were used to fabricate W/Al₂O₃ superlattices with high X-ray reflectivity on flexible Kapton® polyimide and polyethylene naphthalate (PEN) polymer substrates. Reflectivities of 78% and 74% at λ = 1.54 Å were measured for 6-bilayer W/Al₂O₃ superlattices on Kapton® polyimide and PEN, respectively. These excellent X-ray reflectivities are attributed to precise bilayer thicknesses and ultrasmooth interfaces obtained by ALD and smoothing of the initial polymer surface by an Al₂O₃ ALD layer. The conformal ALD film growth also produces correlated roughness that enhances the reflectivity. These W/Al₂O₃ superlattices on flexible polymers should be useful for ultralight and adjustable radius of curvature X-ray mirrors.     

The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes

Circular mesa GaAs p⁺-i-n⁺ diodes for photon counting soft X-ray spectroscopy have been fabricated and characterised over a temperature range of +80 to -30 °C. The spectroscopic performance of the diodes, as measured by the FWHM of the Mn K_α X-ray line from an ⁵⁵Fe radioisotope, is reported. In addition, we compare the GaAs diodes with previously fabricated and characterised Al_0.8Ga_0.2As p⁺-i-n⁺ diodes of similar geometry.