Optical Gain of V—groove Zn1—xCdxSe／ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.     

Magneto-polaron induced intersubband optical transition in a wide band gap Ⅱ–Ⅵ semiconductor quantum dot

Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cd0:8Zn0:2Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydrogenic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscillator strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.     

Logarithmic Gain-carrier Density Characteristic of QW Lasers

The relationship between gain and carrier density is analysed.In the quantum well(QW) lasers,initially,the gain increases rapidly with the carrier density and then starts to saturate.It can be seen that QW lasers have a higher differential gain because of the step-like state density,and that the gain saturates at higher carrier densities because of the constant state density of the lowest subband.It is shown that simple ogarithmic gain-carrier density is more accurate than the traditional linearized form for a QW laser.     

Giant in-plane optical anisotropy of α-plane ZnO on r-plane sapphire

We have measured the in-plane optical anisotropy （IPOA） of （1120） ZnO （a-plane） on （10]-2） sapphire （r-plane） by reflectance difference spectroscopy （RDS） at room temperature. Giant IPOA has been observed be- tween the light polarized direction parallel and perpendicular to the c axis of ZnO, since the symmetry of a-plane is C2v. A sharp resonance has been observed near the fundamental band gap, which is induced by the polarization- depend band gap shift. The sharp line shape is attributed to the exciton transition. The spectra fitting and differential spectra indicate the polarization-depend band energies. The giant IPOA is possible enhanced by anisotropy strain along and perpendicular to the c axis in the a-plane.     

Slow light propagation without absorption based on intersubband transitions in a semiconductor quantum well

When semiconductor quantum wells(SQWs) interact with lasers,the group velocity of the low-intensity light pulse is studied theoretically.It is shown that by adjusting the parameters,slow light propagation of the probe field can be exhibited in such a system.Meanwhile,the probe absorption-gain spectra can be changed from absorption to zero,i.e.,electromagnetically induced transparency(EIT).It is easy to observe the light propagation experimentally,and it leads to potential applications in many fields of solid-state quantum information,for example,optical switching,detection and quantum computing.     

Noise Temperature Characteristics and Gain-control of Avalanche Photodiodes for Laser Radar

Avalanche photodiodes（APDs） are promising light sensors with high quantum efficiency and low noise. It has been extensively used in radiation detection, laser radar and other weak signal detection fields. Unlike other photodiodes, APD is a very sensitive light detector with very high internal gain. The basic theory shows that the gain of APD is related to the temperature. The internal gain fluctuates with the variation of temperature. Investigated was the influence of the variation of the gain induced by the fluctuation of temperature on the output from APD for a very weak laser pulse input in laser radar. An active reverse-biased voltage compensation method is used to stabilize the gain of APD. An APD model is setup to simulate the detection of light pulse signal. The avalanche process, various noises and temperature＇s effect are all included in the model. Our results show that for the detection of weak light signal such as in laser radar, even a very small fluctuation of temperature could cause a great effect on APD＇s gain. The results show that the signal-tonoise ratio of the APD＇s output could be improved effectively with the active gain-control system.     

First principle studies of structural, elastic, electronic and optical properties of Zn-chalcogenides under pressureMuhammad Bilala, M. Shafiqa, Iftikhar Ahmada, Imad Khana,*

Structural, elastic, electronic and optical properties ofzinc-chalcogenides （viz. ZnX, X = S, Se and Te） are studied in zinc-blende structure under hydrostatic pressure using the full-potential linearized augmented plane wave method. Generalized gradient approximation is used for exchange correlation potentials. Pressure-dependent lattice constants and bulk moduli are obtained using the optimization method. Young＇s modulus, Poisson＇s ratio, internal strain parameter and anisotropy are also calculated. The higher values of Young＇s modulus in comparison to the bulk modulus show that these materials are hard to break. Poisson＇s ratio is computed for the first time for these materials to the best of our knowledge and its values show higher ionic contribution in these materials. Modified Becke and Johnson （mBJ） method is used to study band gaps, density of states, dielectric function and refractive index. Electronic study shows direct band gaps convert to indirect band gaps with increasing pressure in the case of ZnS and ZnTe. We compared our results with other theoretical and experimental results. Our results are far better than other theoretical results because mBJ is the best technique to treat Ⅱ-Ⅵ semiconductors.     

Structural and opto-electrical properties of pyrolized ZnO-CdO crystalline thin films

A series of ZnO-CdO thin films of different molar ratios of Zn and Cd have been deposited on glass substrate at substrate temperature ~ 360 ℃ by the spray pyrolysis technique at an ambient atmosphere. X-ray diffraction (XRD) studies confirmed the polycrystalline nature of the film and modulated crystal structures of wurtzite (ZnO) and cubic (CdO) are formed. The evaluated lattice parameters, and crystallite size are consistent with literature. Dislocation density and strain increased in the film as the grain sizes of ZnO and CdO are decreased. The band gap energy varies from 3.20 to 2.21 eV depending on the Zn/Cd ratios in the film. An incident photon intensity dependent I-V study confirmed that the films are highly photosensitive. Current increased with the increase of the intensity of the light beam. The optical conductivity and the optical constants, such as extinction coefficient, refractive index and complex dielectric constants are evaluated from transmittance and reflectance spectra of the films and these parameters are found to be sensitive to photon energy and displayed intermediate optical properties between ZnO and CdO, making it preferable for applications as the buffer and window layers in solar cells.     

Performance of Er3+-doped chalcogenide glass MOF amplifier applied for 1.53 μm band

A model of Er3＋-doped chalcogenide glass （GasGe20Sb10S65） microstructured optical fiber （MOF） amplifier under the excitation of 980 nm is presented to demonstrate the feasibility of it applied for 1.53 μm band optical communications. By solving the Er3＋ population rate equations and light power propagation equations, the amplifying performance of 1.53 μm band signals for Er3＋-doped chalcogenide glass MOF amplifier is investigated theoretically. The results show that the Er6＋-doped chalcogenide glass MOF exhibits a high signal gain and broad gain spectrum, and its maximum gain for small-signal input （-40 dBm） exceeds 22 dB on the 300 cm MOF under the excitation of 200 mW pump power Moreover, the relations of 1.53 μm signal gain with fiber length, input signal power and pump power are analyzed. The results indicate that the Er3＋-doped Ga5Ge20Sb10S65 MOF is a promising gain medium which can be applied to broadband amplifiers operating in the third communication window.     

Study of SBS slow light based on nano-material doped fiber

A novel optical fiber doped with nano material InP is manufactured by the modified chemical vapor deposition (MCVD). The slow light based on stimulated Brillouin scattering (SBS) in the optical fiber is studied. The results show that a time delay of ~738 ps is obtained when the input Stokes pulse is 900 ps(FWHM) and the SBS gain is ~15. It shows that a considerable time delay and an amplification of the input light can be achieved by this novel optical fiber.     

基于密度泛函理论计算的3d过渡金属掺杂CuGaS2电子结构分析

3d transition metals doped CuGaS2 are considered as possible absorbing material candidates for intermediated band thin film solar cells. The electronic structure and optical properties of 3d transition metals doped CuGaS2 are investigated by using density functional theory calculations with the GGA ＋ U method in the present work. The doping with 3d transition metals does not obviously change the crystal structure, band gap, and optical absorption edge of the CuGaS2 host. However, in the case of CuGa1-χTMχS2 （TM = Ti, V, Cr, Fe, and Ni）, there is at least one distinct isolated impurity energy level in the band gap, and the optical absorption is enhanced in the ultraviolet-light region. Therefore, these materials are band thin film solar ceils. The calculated results are very well better explain them. ideal absorber material candidates for intermediated consistent with experimental observations, and could better explain them.     

Analytical model of a superluminescent diode

Using a set of traveling wave rate equations ,a superluminescent diode with a low facet reflectivity is studied .Analytical expressions of the distribu-tions of carrier density ,forward-and backward-propagation photon densities,and gain are obtained at different facet reflectivities.It is shown that the high nonuni-form carrier distribution is evident in the case of low facet reflectivity.The results can serve as useful guides in understanding emission mechanism of superlumi-nescent diodes.     

Polycrystalline ZnO Films Deposited on Glass by RF Reactive Sputtering

Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spectrum were employed to analyze the structure and optical character of the films.The strain and stress in films, as well as the packing density are calculated in terms of refractive index of films measured with an elliptic polarization analyzer.It is the deposition conditions that have great effects on the structural and optical properties of ZnO films.Under the optimal conditions,the only evident peak in XRD spectrum was (002) peak with the full width at half maximum (FWHM) of 0.20° showing the grain size of 42.8 nm.The packing density,the stress in (002) plane and the average optical transmittance in the visible region were about 97%,-1.06×10~9 N/m~2 and 92%, respectively.     

Dielectric confinement on exciton binding energy and nonlinear optical properties in a strained Zn1-xinMgx（in）Se/Zn1-x（out）Mgx（out）Se quantum well

正The band offsets for a Zn_(1-Xin)Mg_(Xin)Se/Zn_(1-Xout)Mg_(1-Xout)Se quantum well heterostructure are determined using the model solid theory.The heavy hole exciton binding energies are investigated with various Mg alloy contents.The effect of mismatch between the dielectric constants between the well and the barrier is taken into account.The dependence of the excitonic transition energies on the geometrical confinement and the Mg alloy is discussed.Non-linear optical properties are determined using the compact density matrix approach.The linear,third order non-linear optical absorption coefficient values and the refractive index changes of the exciton are calculated for different concentrations of magnesium.The results show that the occurred blue shifts of the resonant peak due to the Mg incorporation give the information about the variation of two energy levels in the quantum well width.     

Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot

Hydrogenic acceptor binding energy as a function of dot radius in a GaMnAs/Ga_0.6Al_0.4As quantum dot is calculated including the exchange interaction of Mn alloy content with an itinerant carrier.Calculations are performed by varying its dot radius,for various Mn alloy contents in GaMnAs quantum dot within a single band effective mass approximation using variational method.The spin polaronic energy of the acceptor impurity for different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of magnetic field strength.The magnetization is computed in the influence of magnetic field and the Mn ions.The effective g-factor of the valence band electron with the inclusion of effects of Mn ion impurities is found in the influence of the magnetic field.The exchange coupling constant is calculated for various magnetic field strengths.The results show that the p-d exchange interaction in the GaMnAs/Ga_0.6Al_0.4As quantum dot has a strong dependence on spatial confinement,effect of magnetic field strength and the Mn alloy content.Our results are in good agreement with the other investigators.     

Theoretical investigation of some parameters into the behavior of quantum dot solar cells

The main goal of this paper is to determine the accurate values of two parameters namely the surface generation–recombination rate and the average total number of electrons density generated in the i-region. These values will enhance the performance of quantum dot solar cells(QDSCs). In order to determine these values, this paper concentrates on the optical generation lifetime, the recombination lifetime, and the effective density state in QDs. Furthermore, these parameters are studied in relation with the average total number of electrons density. The values of the surface generation–recombination rate are found to be negative, which implies that the generation process is dominant in the absorption quantum dot region. Consequently, induced photocurrent density relation with device parameters is determined. The results ensure that QDSCs can have higher response photocurrent and then improve the power conversion efficiency. Moreover, the peak value of the average total number of electrons density is achieved at the UV range and is extended to the visible range, which is adequate for space and ground solar applications.     

Electronic structure and optical properties of a new type of semiconductor material:graphene monoxide

The electronic and optical properties of graphene monoxide,a new type of semiconductor material,are theoretically studied by first-principles density functional theory.The calculated band structure shows that graphene monoxide is a semiconductor with a direct band gap of 0.95 eV.The density of states of graphene monoxide and the partial density of states for C and O are given to understand the electronic structure.In addition,we calculate the optical properties of graphene monoxide,including the complex dielectric function,absorption coefficient, complex refractive index,loss-function,reflectivity and conductivity.These results provide a physical basis for potential application in optoelectronic devices.     

倾斜腔结构对量子点光有源器件性能的影响

Quantum-dot laser diodes （QD-LDs） with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers （QD-SOAs） with 7° tilted cavity were fabricated. The infuence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QDSOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design. A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm, which is approximately equal to the homogeneous broadening of quantum dots.     

Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures

Internal optical loss in separate-confinement laser heterostructures with an ultrawide (>1 smm) waveguide has been studied theoretically and experimentally. It is found that an asymmetric position of the active region in an ultrawide waveguide reduces the optical confinement factor for higher-order modes and raises the threshold electron density for these modes by 10–20%. It is shown that broadening the waveguide to above 1 μm results in a reduction of the internal optical loss only in asymmetric separate-confinement laser heterostructures. The calculated internal optical loss reaches ∼0.2 cm⁻¹ (for λ≈1.08 μm) in an asymmetric waveguide 4 μm thick. The minimum internal optical loss has a fundamental limitation, which is determined by the loss from scattering on free carriers at the transparency carrier density in the active region. An internal optical loss of 0.34 cm⁻¹ was attained in asymmetric separate-confinement laser heterostructures with an ultrawide (1.7 μm) waveguide, produced by MOCVD. Lasing in the fundamental transverse mode has been obtained owing to the significant difference in the threshold densities for the fundamental mode and higher-order modes. The record-breaking CW output optical power of 16 W and wallplug efficiency of 72% is obtained in 100-μm aperture lasers with a Fabry-Perot cavity length of ∼3 mm on the basis of the heterostructures produced. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 12, 2004, pp. 1477–1486. Original Russian Text Copyright ? 2004 by Slipchenko, Vinokurov, Pikhtin, Sokolova, Stankevich, Tarasov, Alferov.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.