TC4表面激光熔覆Ti-Al-(C,N)复合涂层的组织与力学性能

为了改善TC4合金的表面性能,在TC4表面预置不同成分的复合粉末,采用激光熔覆工艺制备了Ti-Al-(C, N)复合涂层。通过对涂层的物相组成及微观组织结构进行分析,揭示了复合涂层的合成机理,并结合复合涂层的组织结构特征分析了其硬度分布。结果表明:熔覆层与基体之间形成了良好的冶金结合;熔覆层主要由基体相Ti_xAl_y和树枝晶TiC_1-xN_x组成;激光快速熔凝过程中Al元素扩散进入TiC_1-xN_x相枝晶边缘形成MAX相;合适的粉末配比能使熔覆层的组织细小致密,熔覆层的最高硬度为基体的2.04倍。     

半导体激光熔覆Co/B4C复合材料的研究

采用3 kW半导体激光在45#基体上激光熔覆Co/B4C复合材料, 并研究了B4C含量对熔覆层裂纹、组织和硬度的影响规律, 获得了最佳的B4C含量。结果表明, B4C含量从w(B4C)＝1.0 %增加到w(B4C)＝2.0％时, 熔覆层无裂纹和气孔等缺陷, B4C达w(B4C)＝3.0%时, 熔覆层出现裂纹; 熔覆层与基体呈冶金结合, 呈致密均匀的枝晶组织, 枝晶组织随B4C含量增加逐渐细化; 随着B4C含量的增加, 熔覆层的显微硬度由无B4C的HV0.2 400提高到约HV0.2 900, 强化效果显著。     

低温水冷下AZ80镁合金表面激光熔覆Al_(63)Cu_(27)Zn_(10)涂层的组织与性能

为提高AZ80镁合金的表面性能,在低温流水冷却条件下采用预置粉末激光熔覆法在镁合金表面制备Al63Cu27Zn10(原子数分数,%)涂层。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、显微硬度仪、摩擦磨损试验机、电化学工作站对熔覆层和基体的微观组织与性能进行了表征和分析。结果表明:熔覆层组织均匀致密,与基体呈良好冶金结合,熔覆层主要由α-Mg,二元相Al17Mg12、Al Mg、Al3Mg2,三元相Mg32Al47Cu7、Al Mg2Zn、Mg Al2O4和非晶相组成。熔覆层的显微硬度为375~683 HV,是基体(92 HV)的4~7倍,熔覆层相对耐磨性为基体的3.2倍,电极电位提高了389.5 m V,腐蚀电流降低了两个数量级。经激光熔覆Al63Cu27Zn10(原子数分数,%)涂层后,AZ80镁合金基体的耐磨耐蚀性能得到较大改善。     

钛合金表面激光熔覆(Ti+Al/Ni)/(Cr2O3+CeO2)复合涂层组织与耐磨性能

为改进钛合金(Ti6Al4V)的耐磨性能,应用脉冲Nd:YAG激光器进行了钛合金表面熔覆(Ti+Al/Ni)+(Cr2O3+CeO2)复合涂层实验,分析了熔覆层微观组织,测试了熔覆层显微硬度及其在大气环境室温下的摩擦磨损性能.结果表明,熔覆层组织是在细小树枝晶和共晶基体上散布着未熔Cr2O3颗粒和白亮球状液析Cr2O3,及生成的硬化TiAl陶瓷颗粒增强相.显微硬度明显提高,最高可达1150HV,平均是基材的3～4倍.熔覆层和基材实现良好冶金结合,白亮熔合区宽度为10～20 μm.激光熔覆层干滑动摩损的摩擦系数在0.2～0.3之间,磨损率比Ti6Al4V标样降低约4～5倍.     

宽带激光熔覆制造高速线材硬质合金辊环

利用积分镜对激光束进行整形获得宽带激光束,在Crl2基体上进行了宽带激光熔覆WC/钴基合金层,获得无裂纹的高速线材辊环。对激光熔覆层用扫描电境(SEM)进行形貌观察,并进行能谱成分分析,用XRD进行合金物相的表征。结果表明,熔覆层组织主要是由Co的过饱和固溶体、WC、W_2C、CoCr、Cr_7C_3等相组成。W_2C相的出现说明WC相发生了分解,WC等硬质相的存在导致熔覆层硬度的非均匀性。     

添加Ni对激光熔覆CuAl10铜合金组织与性能的影响

为进一步提高Cu Al10合金激光熔覆层的耐蚀性能,研究添加不同质量分数的Ni对Cu Al10熔覆层组织及性能的影响。采用HPDL-D30半导体激光设备,用同步送粉的方式在316L不锈钢基体表面进行激光熔覆。借助扫描电子显微镜(SEM)、能谱仪(EDS)、X射线衍射(XRD)对激光熔覆层进行组织、成分及物相分析,并使用显微硬度计进行硬度分析和电化学工作站进行耐蚀性能分析。研究结果表明:添加Ni元素的铜合金熔覆层与基体金属冶金结合,组织分布均匀;添加Ni能显著提高激光熔覆层的耐蚀性能,随着Ni含量的增加,其耐蚀性呈增强趋势,Ni质量分数为6.0%时,耐蚀性能达到最优;未添加Ni元素的熔覆层物相主要以α-Cu,α-Fe,Al Fe3,Cu9Al4组成,添加Ni元素的熔覆层物相主要由α-Cu,α-(Cu,Ni),Al Cu3,Cu9Al4组成。     

汽车用AZ91D合金的表面激光熔覆与性能研究

通过激光熔覆技术在AZ91D合金表面制备Al-TiC和Al-TiC-Y₂O₃熔覆层，研究Al∶TiC质量比和Y₂O₃添加量对熔覆层截面形貌、物相、硬度和耐腐蚀性能的影响。结果表明：不同Al∶TiC质量比的Al-TiC熔覆层和不同Y₂O₃添加量的Al-TiC-Y₂O₃复合熔覆层都与AZ91D合金基体实现了良好的冶金结合；Al-TiC熔覆层的主要物相为Ti₃AlC、TiC、Mg₂Al₃和Al₃Mg₂,加入Y₂O₃后的Al-TiC-Y₂O₃熔覆层中新产生了Al₃Y和Al₄MgY相；当Al∶TiC质量比为8∶1、4∶1和2∶1时，相应的Al-TiC熔覆层的硬度约为AZ91D合金的2....     

WC含量对WC/Ni60A激光熔覆层微观组织的影响

激光熔覆镍基复合涂层在改善H13模具钢表面性能方面具有显著优势。在H13钢表面激光熔覆WC质量分数分别为20%、33%、50%的WC/Ni60A复合粉末,在优化工艺参数的基础上研究熔覆层的微观组织。研究发现,激光熔覆WC/Ni60A复合涂层的相组成复杂。WC的含量会显著影响熔覆层组织的生成及其形态。WC质量分数为20%时,熔覆层由大量γ-(Fe,Ni)树枝晶和晶间富W碳化物组成;WC质量分数为33%时,熔覆层由大量的团絮状共晶组织组成,其中心为块状M_(23)C_6,周围为M_(23)C_6和γ-(Fe,Ni)组成的共晶组织,形态非常特殊;WC质量分数为50%时,熔覆层中生成了大量块状M6C、雪花状M23C6和针状Cr4Ni15W组织。WC质量分数分别为20%、33%、50%时,熔覆层的硬度相对于基体显著提高,分别达到了730、760、810 HV。     

Cr12MoV模具钢激光熔覆Fe基合金的组织与性能分析

为了进一步提高模具钢表面的硬度和耐磨性能,以Cr12MoV作为基体材料,利用2 kW半导体激光器,以同轴送粉的方式在其表面上熔覆高硬度的Fe基合金粉末。通过光学显微镜、X射线衍射、扫描电镜分析熔覆层的组织形貌和物相;用显微硬度计测试熔覆层的显微硬度,用磨损试验机进行耐磨试验。进而研究激光功率、扫描速度和送粉量等工艺参数对熔覆层组织性能的影响,确定了最优化工艺参数。实验结果表明,使熔覆层的硬度和耐磨性较优良的工艺参数为:激光功率为1.2 kW,扫描速度为720 mm/s,送粉量为8.5 g/min。在此工艺参数下,熔覆层无裂纹、气孔、夹渣等缺陷,且显微硬度和耐磨性能得到显著提高,最高硬度达921 HV0.2,熔覆层的磨损失重仅为基体材料的25%,明显高于基体的硬度和耐磨性,这归因于熔覆层中存在V4C3、Cr23C6、Cr7C3等细小树枝晶。     

激光重熔对铁基/TiC复合涂层成形质量及性能研究

为研究激光熔覆过程中重熔功率对熔覆层的形貌和性能影响，采用激光重熔技术，在Ti6Al4V钛合金表面制备了铁基/TiC复合涂层。采用着色渗透探伤剂和金相显微镜观察了熔覆层表面裂纹和气孔的分布情况，利用维氏硬度计和摩擦磨损测试仪表征了熔覆层的截面显微硬度和摩擦磨损性能。结果表明，重熔功率的增加能够有效地抑制熔覆层的裂纹和气孔；在力学性能方面，重熔后的熔覆层维氏硬度约是Ti6Al4V钛合金基体的8倍，当重熔功率为1 200 W时，所制备的铁基/TiC复合涂层的平均维氏硬度达到最大值，约为1 188 HV;此外，随着激光重熔功率增大，铁基/TiC复合涂层在磨擦磨损的过程中可以有效地阻止磨粒和摩擦副对熔覆层的微切削与塑性变形，同时，熔覆层的磨损量降低，摩擦系数降低。     

Investigation of Ti/Al and TiN/Al thin films as the stable ohmic contact for p-type 4H-SiC

Interfacial reactions, surface morphology, and current-voltage (I-V) characteristics of Ti/Al/4H-SiC and TiN/Al/4H-SiC were studied before and after high-temperature annealing. It was observed that surface smoothness of the samples was not significantly affected by the heat treatment at up to 900°C, in contrast to the case of Al/SiC. Transmission electron microscopy (TEM) observation of the Ti(TiN)/Al/SiC interface showed that Al layer reacted with the SiC substrate at 900°C and formed an Al-Si-(Ti)-C compound at the metal/SiC interface, which is similar to the case of the Al/SiC interface. The I-V measurement showed reasonable ohmic properties for the Ti/Al films, indicating that the films can be used to stabilize the Al/SiC contact by protecting the Al layer from the potential oxidation and evaporation problem, while maintaining proper contact properties.     

Control of Al and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy

The atomic concentration profiles in 4H and 6H SiC created by Al and B doping turn-on and turn-off during vapor phase epitaxy (VPE) was investigated by secondary ion mass spectrometry (SIMS). It was found that dopant traces were adsorbed to the reactor walls and re-evaporated after the dopant precursor flow was switched off. This adsorption/re-evaporation process limits the doping dynamic range to about three orders of magnitude for Al, and two orders of magnitude for B. An order of magnitude in doping dynamics could be gained by simultaneously switching the gases and changing the C:Si precursor ratio. By adding a 10 min growth interruption with an H or HC1 etch at the doping turn-off, the background doping tail could be considerably suppressed. In total, a doping dynamics for Al of almost five orders of magnitude can be controlled within a 30 nm layer. For B, the dynamic range is more than three orders of magnitude, and the abruptness is most probably diffusion limited. Abackground doping level of 2 × 10¹⁵ cm⁻³ for Al and 2 × 10¹⁶ cm⁻³ for B was obtained. For Al, the background doping is most probably due to the adsorption/re-evaporation of dopants at the reactor walls; while for B, the background doping may in addition be limited by diffusion.     

Influence of lattice polarity of nitrogen and aluminum doping on 4H-SiC epitaxial layer

We have reinvestigated the characteristics of N and Al doping on 4H-SiC epitaxial layer. It was found that thermally activated process and desorption process are aspects of the mechanism of the N incorporation to which attention should be paid. The process strongly depends on the lattice polarity and C/Si ratio. Thermally activated process dominates the N incorporation of the Si-face under the high C/Si ratio. Under the low C/Si condition, the desorption process dominates the N incorporation of the Si-face. For C-face, the desorption process dominates the N incorporation regardless of the lattice polarity and the C/Si ratio. Concerning Al doping, the desorption process dominates the Al incorporation without reference to the lattice polarity and the C/Si ratio.     

镁合金表面激光熔覆Al-Si基纳米SiC复合涂层的组织及性能

纳米材料由于其结构的特殊性,具有一般材料难以获得的优异性能,为了将纳米材料的优异性能应用到镁合金表面改性当中,利用横流CO₂激光器在AZ31B镁合金基体上制备了Al-Si合金粉末+5%纳米SiC粉末复合涂层,采用光学显微镜、扫描电子显微镜观察了熔覆层的显微组织并分析了微区成分分布情况,激光熔覆层与基体结合良好,熔覆层的显微组织具有明显的结构特征,出现了大量的十字架结构。X射线衍射结果表明,激光熔覆层的组成相主要为Mg₂Si、Mg₂C₃、Mg₁₇Al₁₂、A_l3.21Si_0.47等。利用显微硬度仪进行了硬度测试,由于在激光熔覆过程中新形成的化合物起到了强化作用,熔覆层的最高显微硬度可达216 HV0.2,是基体的3倍多。     

Improvement of thermal stability of Ni silicide on N-Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface

The direct deposition of a thin Al or B layer at Ni/Si interface was proposed as a new method to solve a problem of degraded thermal stability of Ni silicide on heavily doped N⁺-Si substrates. Significant improvement of thermal stability evaluated by the sheet resistance vs. silicidation temperature properties was observed. The improvement is attributed to suppression of agglomeration of the silicide layers. The Al layer was effective only when it was located at the Ni/Si interface before the silicidation process. The deposited Al and B layers under Ni layer segregated at the surface after the silicidation process. The use of B layer was preferable to control the phase transition from NiSi to NiSi₂.     

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

The activation of ion-implanted B into 4H-SiC, and B, and Al into 6H-SiC is investigated. Complete activation of B implants into 4H-SiC is achieved by annealing at 1750°C for 40 min in an Ar environment. Significant activation (>10%) is not achieved unless the annealing temperature is 1600°C or greater. Sheet resistances of Al-implanted 6H-SiC annealed at 1800°C are 32.2 kΩ/□, indicating high activation of Al at this temperature. Annealing conditions which result in good acceptor activation are shown to be damaging to the surface of either 4H- or 6H-SiC. Atomic force microscopy and Nomarski differential interference contrast optical microscopy are applied to characterize the surfaces of these polytypes. Roughening of the surfaces is observed following annealing in Ar, with measured roughnesses as large as 10.1 nm for B-implanted 4H-SiC annealed at 1700°C for 40 min. Based on data obtained from these techniques, a model is proposed to describe the roughening phenomenon. The premise of the model is that SiC sublimation and mobile molecules enable the surface to reconfigure itself into an equilibrium form.     

LiF层对ITD/Alq~3/LiF∶Al器件性能的影响

分别制备了4种有机电致发光器件(OLEDs):ITO/Alq3/Al;ITO/Alq3/LiF(1.0nm):Al;ITO/Alq3/LiF(1.5nm)∶Al;ITO/Alq3/LiF∶(2.0nm)Al。研究了LiF的引入对金属电极与发光层界面的影响以及各种不同的界面态对器件发光性能的影响。研究结果表明:适当的LiF厚度的引入不仅可以改善器件的界面特性,而且可以提高器件的发光亮度及发光效率。     

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al (x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al (x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A^-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.     

SiC/Mg multilayer reflective mirror for He-Ⅱ radiation at 30.4 nm and its thermal stability

In applications of solar physics, extreme ultraviolet imaging of solar corona by selecting the HeⅡ (λ = 30.4 nm) emission line requires high reflectivity multilayer mirrors. Some material combinations were studied to design the mirrors working at a wavelength of 30.4 nm, including SiC/Mg, B4C/Mg, C/Mg, C/Al, Mo/ Si, B4C/Si, SiC/Si, C/Si, and Sc/Si. Based on optimization of the largest reflectivity and the narrowest width for the multilayer mirror, a SiC/Mg material combination was selected as the mirror and fabricated by a magnetron sputtering system. The layer thicknesses of the SiC/Mg multilayer were measured by an X-ray diffractometer. Reflectivities were then measured on beamline U27 at the National Synchrotron Radiation Laboratory (NSRL) in Hefei, China. At a wavelength of 30.4 nm, the measured reflectivity is as high as 38.0%. Furthermore, a series of annealing experiments were performed to investigate the thermal stability of the SiC/Mg multilayer.     

CaO-BaO-Al2O3红外玻璃的形成及制备

通过添加BaO增加了铝酸钙玻璃的成玻能力,确定了CaO-BaO-Al2O3三元系统的成玻区域:25～45 mol%的Al2O3,45～65 mol%的CaO, 0～18 mol%的BaO,在成玻区域内采用Hruby值研究Al2O3/CaO值和BaO含量对系统成玻能力的影响,发现当Al2O3/CaO值为0.60、BaO含量为8 mol%时,系统的成玻能力最强。以成玻能力最好的56 CaO-8 BaO-36 Al2O3组成为基础,将真空烧结后几乎不含水的玻璃配合料分别在大气环境下、干燥氮气保护以及干燥氮气保护+CCl4搅拌等3种不同的条件下进行熔制,分析玻璃的红外透过光谱和残余水分含量。结果表明:采用干燥氮气保护+CCl4搅拌的方法,7 mm玻璃在2.9 um的透过率接近84%,残余水分含量仅为0.003 7,基本消除了OH-1的影响。