Analog characterization of low-voltage MQW traveling-wave electroabsorption modulators

In this paper, high-speed traveling-wave electroabsorption modulators (TW-EAMs) with strain-compensated InGaAsP multiple quantum wells as the absorption region for analog optical links have been developed. A record-high slope efficiency of 4/V, which is equivalent to a Mach-Zehnder modulator with a V/sub /spl pi// of 0.37 V and a high extinction ratio of > 30 dB/V have been measured. A detailed study of the nonlinearity and the spurious-free dynamic range (SFDR) is presented. By optimizing the bias voltage and the input optical power, the SFDR can be improved by 10-30 dB. After minimizing the third-order distortion, an SFDR as high as 128 dB-Hz/sup 4/5/ is achieved at 10 GHz. A simple link measurement was made using this EAM and an erbium-doped fiber amplifier and a 50-/spl Omega/ terminated photodetector. At 10 GHz, a link gain of 1 dB is achieved at a detected photocurrent of 7.6 mA with higher gains at lower frequencies. The dependence of link gains on bias voltage, input optical, and radio frequency powers are investigated in detail.     

A photonic-link millimeter-wave mixer using cascaded optical modulators and harmonic carrier generation

Efficient frequency conversion into and out of the millimeter wave frequency band has been demonstrated using photonic link signal mixing with cascaded optical modulators. By adjusting the modulator bias point and RF drive power to the modulator introducing the local oscillator signal at f/sub LO/=8.8 GHz, frequency conversions from f/sub s/ to f/sub LO//spl plusmn/f/sub s/, sf/sub LO//spl plusmn/f/sub s/, and 4f/sub LO//spl plusmn/f/sub s/ with respective losses of 4.8, 6.3, and 7.5 dB have been demonstrated. The direct phase noise measurement of the optical RF signal at 2f/sub LO/=17.6 GHz with 1 kHz offset shows -89 dBc/Hz, limited by the RF drive source.     

High-speed silicon electrooptic Modulator design

An electrically driven Mach-Zehnder waveguide modulator based on high-index contrast silicon split-ridge waveguide technology and electronic carrier injection is proposed. The excellent optical and carrier confinement possible in high-index contrast waveguide devices, together with good thermal heat sinking and forward biased operation, enables high-speed modulation with small signal modulation bandwidths beyond 20 GHz, a V/sub /spl pi// times length figure of merit of V/sub /spl pi//L=0.5 V/spl middot/cm and an insertion loss of about 4 dB. The modulator can be fabricated in a complementary metal-oxide-semiconductor compatible way.     

InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications

We report the design, fabrication, and measurement of InAlAs/InGaAs heterostructure bipolar transistors (HBTs) designed for high speed digital circuits. At 0.96 V V/sub CE/ the current gain cutoff frequency, f/sub /spl tau//, is 300 GHz and the maximum frequency of oscillation, f/sub max/, is 235 GHz. This value of f/sub /spl tau//, is the highest reported for bipolar transistors. At a slightly higher V/sub CE/ bias, a high value of 295 GHz for f/sub /spl tau// and f/sub max/ were obtained simultaneously.     

A Catalog of Low Power Loss Parameters and High Power Thresholds for Partially Magnetized Ferrites

The low power loss and high power threshold properties have been measured on a number of candidate ferrite phase-shifting materials. The low power loss is characterized by /spl mu//sub 0/', the imaginary part of the diagonal component of the permeability tensor for the completely demagnetized state. /spl mu/sub 0/' was measured from 3.0 to 16.8 GHz. The high power properties are characterized by the parallel pump threshold at a bias field correspontig to H/sub i/ /spl equiv/ 0 and to 4/spl pi/M /spl equiv/ 4/spl pi/M/sub s/. The threshold was measured between 3.0 and 16.8 GHz. For the purposes of computer calculation /spl mu//sub 0/' and h/sub crit/ were fit to an equation of the form A (/spl gamma/4/spl pi/M/sub s/ / /spl omega/)/sup N/. Translating /spl mu//sub 0/' and h/sub crit/ to /spl Delta/H/sub eff/ and /spl Delta/H/sub k/ gives the YIG plus Al as the lowest loss and lowest threshold materials followed by the Gd garnets and MgMn spinels. The Ni spinels are very Iossy.     

Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

High electron mobility transistors (HEMTs) were fabricated from AlGaN/-GaN layers grown by plasma-assisted molecular beam epitaxy on semi-insulating 6H-SiC substrates. Room-temperature Hall effect measurements yielded a polarization-induced 2DEG sheet charge of 1.3/spl middot/10/sup 13/ cm/sup -2/ and a low-field mobility of 1300 cm/sup 2//V/spl middot/s. Submicron gates were defined with electron beam lithography using an optimized two-layer resist scheme. HEMT devices repeatedly yielded drain current densities up to 1798 mA/mm, and a maximum transconductance of 193 mS/mm. This is the highest drain current density in any AlGaN-GaN HEMT structure delivering significant microwave power reported thus far. Small-signal testing of 50-/spl mu/m wide devices revealed a current gain cutoff frequency f/sub T/ of 52 GHz, and a maximum frequency of oscillation f/sub max/ of 109 GHz. Output power densities of 5 W/mm at 2 GHz, and 4.9 W/mm at 7 GHz were recorded from 200-/spl mu/m wide unpassivated HEMTs with a load-pull setup under optimum matching conditions in class A device operation.     

TM-pass polymer modulators with poling-induced waveguides and self-aligned electrodes

Transverse magnetic (TM) mode selective polymer Mach-Zehnder modulators with self-aligned electrodes were fabricated for the first time in the electro-optic polymer material APC-CPW1 by employing a poling-induced (PI) writing method. The waveguides support only a TM polarisation, when an arbitrarily polarised optical source is incident. Modulators with a single 3 cm long driving electrode show a V/sub /spl pi// of 3.5 V at 1.55 /spl mu/m.     

IF-sampling fourth-order bandpass /spl Delta//spl Sigma/ modulator for digital receiver applications

Bandpass modulators sampling at high IFs (/spl sim/200 MHz) allow direct sampling of an IF signal, reducing analog hardware, and make it easier to realize completely software-programmable receivers. This paper presents the circuit design of and test results from a continuous-time tunable IF-sampling fourth-order bandpass /spl Delta//spl Sigma/ modulator implemented in InP HBT IC technology for use in a multimode digital receiver application. The bandpass /spl Delta//spl Sigma/ modulator is fabricated in AlInAs-GaInAs heterojunction bipolar technology with a peak unity current gain cutoff frequency (f/sub T/) of 130 GHz and a maximum frequency of oscillation (f/sub MAX/) of 130 GHz. The fourth-order bandpass /spl Delta//spl Sigma/ modulator consists of two bandpass resonators that can be tuned to optimize both wide-band and narrow-band operation. The IF is tunable from 140 to 210 MHz in this /spl Delta//spl Sigma/ modulator for use in multiple platform applications. Operating from /spl plusmn/5-V power supplies, the fabricated fourth-order /spl Delta//spl Sigma/ modulator sampling at 4 GSPS demonstrates stable behavior and achieves a signal-to-(noise + distortion) ratio (SNDR) of 78 dB at 1 MHz BW and 50 dB at 60 MHz BW. The average SNDR performance measured on over 250 parts is 72.5 dB at 1 MHz BW and 47.7 dB at 60 MHz BW.     

Half-terahertz operation of SiGe HBTs

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f/sub T/) of 510 GHz at 4.5 K was measured for a 0.12/spl times/1.0 /spl mu/m/sup 2/ SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV/sub CEO/ of 1.36 V (1.47 V at 300 K), yielding an f/sub T//spl times/BV/sub CEO/ product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).     

SOI technology for radio-frequency integrated-circuit applications

This paper presents a silicon-on-insulator (SOI) integration technology, including structures and processes of OFF-gate power nMOSFETs, conventional lightly doped drain (LDD) nMOSFETs, and spiral inductors for radio frequency integrated circuit (RFIC) applications. In order to improve the performance of these integrated devices, body contact under the source (to suppress floating-body effects) and salicide (to reduce series resistance) techniques were developed for transistors; additionally, locally thickened oxide (to suppress substrate coupling) and ultra-thick aluminum up to 6 /spl mu/m (to reduce spiral resistance) were also implemented for spiral inductors on high-resistivity SOI substrate. All these approaches are fully compatible with the conventional CMOS processes, demonstrating devices with excellent performance in this paper: 0.25-/spl mu/m gate-length offset-gate power nMOSFET with breakdown voltage (BV/sub DS/) /spl sim/ 22.0 V, cutoff frequency (f/sub T/)/spl sim/15.2 GHz, and maximal oscillation frequency (f/sub max/)/spl sim/8.7 GHz; 0.25-/spl mu/m gate-length LDD nMOSFET with saturation current (I/sub DS/)/spl sim/390 /spl mu/A//spl mu/m, saturation transconductance (g/sub m/)/spl sim/197 /spl mu/S//spl mu/m, cutoff frequency /spl sim/ 25.6 GHz, and maximal oscillation frequency /spl sim/ 31.4 GHz; 2/5/9/10-nH inductors with maximal quality factors (Q/sub max/) 16.3/13.1/8.95/8.59 and self-resonance frequencies (f/sub sr/) 17.2/17.7/6.5/5.8 GHz, respectively. These devices are potentially feasible for RFIC applications.     

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 450 GHz f/sub /spl tau// and 490 GHz f/sub max/, which is the highest simultaneous f/sub /spl tau// and f/sub max/ for any HBT. The devices have been scaled vertically for reduced electron collector transit time and aggressively scaled laterally to minimize the base-collector capacitance associated with thinner collectors. The dc current gain /spl beta/ is /spl ap/ 40 and V/sub BR,CEO/=3.9 V. The devices operate up to 25 mW//spl mu/m/sup 2/ dissipation (failing at J/sub e/=10 mA//spl mu/m/sup 2/, V/sub ce/=2.5 V, /spl Delta/T/sub failure/=301 K) and there is no evidence of current blocking up to J/sub e//spl ges/12 mA//spl mu/m/sup 2/ at V/sub ce/=2.0 V from the base-collector grade. The devices reported here employ a 30-nm highly doped InGaAs base, and a 120-nm collector containing an InGaAs/InAlAs superlattice grade at the base-collector junction.     

Time-frequency localisation of Shannon wavelet packets

It is well known that the 2/spl pi/ minimally supported frequency scaling function /spl phi//sup /spl alpha//(x) satisfying /spl phi//spl circ//sup /spl alpha//(/spl omega/)=/spl chi//sub (-/spl alpha/,2/spl pi/-/spl alpha/)/(/spl omega/), 0相似文献   

A 310/spl deg//3.6-dB K-band phaseshifter using paraelectric BST thin films

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/

InP-In/sub 0.53/Ga/sub 0.47/As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 391-GHz f/sub /spl tau// and 505-GHz f/sub max/, which is the highest f/sub /spl tau// reported for an InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f/sub max/ for any mesa HBT. The devices have been aggressively scaled laterally for reduced base-collector capacitance C/sub cb/. In addition, the base sheet resistance /spl rho//sub s/ along with the base and emitter contact resistivities /spl rho//sub c/ have been lowered. The dc current gain /spl beta/ is /spl ap/36 and V/sub BR,CEO/=5.1 V. The devices reported here employ a 30-nm highly doped InGaAs base, and a 150-nm collector containing an InGaAs-InAlAs superlattice grade at the base-collector junction. From this device design we also report a 142-GHz static frequency divider (a digital figure of merit for a device technology) fabricated on the same wafer. The divider operation is fully static, operating from f/sub clk/=3 to 142.0 GHz while dissipating /spl ap/800 mW of power in the circuit core. The circuit employs single-buffered emitter coupled logic (ECL) and inductive peaking. A microstrip wiring environment is employed for high interconnect density, and to minimize loss and impedance mismatch at frequencies >100 GHz.     

High temperature dielectric stability of liquid crystal polymer at mm-wave frequencies

The temperature dependent dielectric stability and transmission line losses of liquid crystal polymer (LCP) are determined from 11-105 GHz. Across this frequency range, LCP's temperature coefficient of dielectric constant, /spl tau//sub /spl epsi/r/, has an average value of -42 ppm//spl deg/C. At 11GHz the /spl tau//sub /spl epsi/r/ is the best (-3 ppm//spl deg/C), but this value degrades slightly with increasing frequency. This /spl tau//sub /spl epsi/r/ average value compares well with the better commercially available microwave substrates. In addition, it includes information for mm-wave frequencies whereas standard values for /spl tau//sub /spl epsi/r/ are usually only given at 10 GHz or below. Transmission line losses on 3- and 5-mil LCP substrates increase by approximately 20% at 75/spl deg/C and 50% or more at 125/spl deg/C. These insertion loss increases can be used as a design guide for LCP circuits expected to be exposed to elevated operating temperatures.     

Miniature and tunable filters using MEMS capacitors

Microelectromechanical system (MEMS) bridge capacitors have been used to design miniature and tunable bandpass filters at 18-22 GHz. Using coplanar waveguide transmission lines on a quartz substrate (/spl epsiv//sub r/ = 3.8, tan/spl delta/ = 0.0002), a miniature three-pole filter was developed with 8.6% bandwidth based on high-Q MEMS bridge capacitors. The miniature filter is approximately 3.5 times smaller than the standard filter with a midband insertion loss of 2.9 dB at 21.1 GHz. The MEMS bridges in this design can also be used as varactors to tune the passband. Such a tunable filter was made on a glass substrate (/spl epsiv//sub r/ = 4.6, tan/spl delta/ = 0.006). Over a tuning range of 14% from 18.6 to 21.4 GHz, the miniature tunable filter has a fractional bandwidth of 7.5 /spl plusmn/ 0.2% and a midband insertion loss of 3.85-4.15 dB. The IIP/sub 3/ of the miniature-tunable filter is measured at 32 dBm for the difference frequency of 50 kHz. The IIP/sub 3/ increases to >50 dBm for difference frequencies greater than 150 kHz. Simple mechanical simulation with a maximum dc and ac (ramp) tuning voltages of 50 V indicates that the filter can tune at a conservative rate of 150-300 MHz//spl mu/s.     

Linear frequency modulation of voltage-controlled oscillator using delay-line feedback

This letter proposes a structure for a voltage-controlled oscillator (VCO) circuit which operates in a frequency range of 4.0-4.3 GHz and can achieve a highly linear frequency sweep without any additional compensation circuit. The VCO consists of an amplifier and a feedback circuit only. The feedback circuit compensates for the phase delay of a transmission line with a varactor and sets the closed-loop phase change close to 360/spl deg/. The measured maximum deviation from a linear frequency sweep is /spl sim/1.2 MHz when the varactor capacitance C/sub V/ of the VCO is related to the control voltage V/sub C/ by C/sub V//spl prop/V/sub C//sup -1.06/. The spectral distribution of the beat frequency between the VCO output and delayed VCO output shows that the proposed VCO has excellent linearity in frequency modulation.     

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

We report an AlGaN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with high-mobility two-dimensional electron gas (2-DEG) and reduced buffer leakage. The device features a 3-nm thin In/sub x/Ga/sub 1-x/N(x=0.1) layer inserted into the conventional AlGaN/GaN HEMT structure. Assisted by the InGaN layers polarization field that is opposite to that in the AlGaN layer, an additional potential barrier is introduced between the 2-DEG channel and buffer, leading to enhanced carrier confinement and improved buffer isolation. For a sample grown on sapphire substrate with MOCVD-grown GaN buffer, a 2-DEG mobility of around 1300 cm/sup 2//V/spl middot/s and a sheet resistance of 420 /spl Omega//sq were obtained on this new DH-HEMT structure at room temperature. A peak transconductance of 230 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 14.5 GHz, and a peak power gain cutoff frequency (f/sub max/) of 45.4 GHz were achieved on a 1/spl times/100 /spl mu/m device. The off-state source-drain leakage current is as low as /spl sim/5 /spl mu/ A/mm at V/sub DS/=10 V. For the devices on sapphire substrate, maximum power density of 3.4 W/mm and PAE of 41% were obtained at 2 GHz.     

Computer-Aided Design of Three-Port Waveguide Junction Circulators

The complete performance of a lossless three-port H-plane waveguide junction loaded coaxially with various inhomogeneous ferrite cylanders has been evaluated over the waveguide bandwidth and compared with experiment. Qualitative agreement between the predicted and measured performance was generally good using only the first three modes, n=0/spl plusmn/1. It has been shown theoretically and verified experimentally that if the 4/spl pi/M/sub s/ of a homogeneous rod or the internal field is increased, the circulation frequency f/sub 0/ increases; conversely, if the pemittivity is increased, f/sub 0/ decreases. These conflicting effects are modified when the magnetization 4/spl pi/M/sub s/ and permittivity /spl epsiv/ are inhomogeneous. For example, if the 4/spl pi/M/sub s/(/spl gamma/) is small at the outer surface of the rod (with permittivity held constant), the effect on f/sub 0/ is very small; but if 4/spl pi/M/sub s/(spl gamma) approaches zero for /spl gamma/ small, then f/sub 0/ may decrease significantly. On the other hand, if /spl epsiv//sub/spl gamma//(/spl gamma/) approaches unity near the outer surface of the rod, f/sub 0/ may increase significantly; but if /spl epsiv//sub/spl gamma//(/spl gamma/) approaches unity near the center of the rod, f/sub 0/ is affected relatively little. The inhomogeneous structure has also shown that decreasing the ferrite volume may improve the performance, and high-power applications are suggested. With a conducting pin down the center of the ferrite, relative bandwidths of 40-50 percent are predicted.