Transformer‐coupled π‐network differential CMOS oscillator circuit topology

This paper reports a novel oscillator circuit topology based on a transformer‐coupled π‐network. As a case study, the proposed oscillator topology has been designed and studied for 60 GHz applications in the frame of the emerging fifth generation wireless communications. The analytical expression of the oscillation frequency is derived and validated through circuit simulations. The root‐locus analysis shows that oscillations occur only at that resonant frequency of the LC tank. Moreover, a closed‐form expression for the quality factor (Q) of the LC tank is derived which shows the enhancement of the equivalent quality factor of the LC tank due to the transformer‐coupling. Last, a phase noise analysis is reported and the analytical expressions of phase noise due to flicker and thermal noise sources are derived and validated by the results obtained through SpectreRF simulations in the Cadence design environment with a 28 nm CMOS process design kit commercially available. Copyright © 2016 John Wiley & Sons, Ltd.     

Analysis of flicker noise conversion to phase noise in CMOS differential LC oscillators

An analysis of the flicker noise conversion to close‐in phase noise in complementary metal‐oxide semiconductor (CMOS) differential inductance‐capacitance (LC)‐voltage controlled oscillator is presented. The contribution of different mechanisms responsible for flicker noise to phase noise conversion is investigated from a theoretical point of view. Impulse sensitivity function theory is exploited to quantify flicker noise to phase noise conversion process from both tail and core transistors. The impact of different parasitic capacitances inside the active core on flicker noise to phase noise conversion is investigated. Also, it is shown how different flicker noise models for core metal‐oxide semiconductor (MOS) transistors may result in different close‐in phase noise behaviors. Based on the developed analysis, design guidelines for reducing the close‐in phase noise are introduced. Copyright © 2015 John Wiley & Sons, Ltd.     

Sinusoidal shaping of the ISF in LC oscillators

A new method to decrease the phase noise of the sinusoidal oscillators is proposed. The proposed method is based on using a dynamic transistor biasing in a typical oscillator topology. This method uses the oscillator impulse sensitivity function (ISF) shaping to reduce the sensitivity of the oscillator to the transistor noise and as a result reducing the oscillator phase noise. A 1.8 GHz, 1.8 V designed oscillator based on the proposed method shows a phase noise of ?130.3dBc/Hz at 1 MHz offset frequency, thereby showing about 6 dB phase noise decreasing in comparison with the typical constant bias topology. This result is obtained from the simulation based on 0.18u CMOS technology and on‐chip spiral inductor with a quality factor equal to 8. Copyright © 2007 John Wiley & Sons, Ltd.     

Analyses and techniques for phase noise reduction in CMOS Colpitts oscillator topology

This paper reports the analyses of three techniques for phase noise reduction in the complementary metal‐oxide semiconductor (CMOS) Colpitts oscillator circuit topology. Namely, the three techniques are inductive degeneration, noise filter, and optimum current density. The design of the circuit topology is carried out in 28‐nm bulk CMOS technology. The analytical expression of the oscillation frequency is derived and validated through circuit simulations. Moreover, the theoretical analyses of the three techniques are carried out and verified by means of circuit simulations within a commercial design environment. The results obtained for the inductive degeneration and noise filter show the existence of an optimum inductance for minimum phase noise. The results obtained for the optimum bias current density technique applied to a Colpitts oscillator circuit topology incorporating either inductive degeneration or noise filter show the existence of an optimum bias current density for minimum phase noise. Overall, the analyses show that the adoption of these techniques may lead to a potential phase noise reduction up to 19 dB at a 1‐MHz frequency offset for an oscillation frequency of 10 GHz. © 2015 The Authors International Journal of Circuit Theory and Applications Published by John Wiley & Sons Ltd.     

Low Phase Noise LC-VCO with Multi-Stage Filtering

A low-phase-noise CMOS voltage-controlled oscillator (VCO) with zero-bias scheme and multi-stage filtering is presented. Sharing ground with fully integrated loop filter, the PMOS-only VCO achieves a zero-bias scheme, which prevents tuning line noise from disturbing VCO output common-mode voltage and hence minimizes phase noise caused by nonlinear C-V characteristic of varactors. Top-biased current source is optimized by multi-stage filtering to reduce 1/f flicker and thermal noise. Fabricated in TSMC 180 nm CMOS process, the proposed VCO exhibits a measured oscillation frequency of 0.85~1.45 GHz, with a phase noise of -121.8~-131.3 dBc/Hz @1MHz offset over the whole band. Power consumption is 3.8~6.3mW from a 1.8V supply.     

Analyses and techniques for phase noise reduction in CMOS Hartley oscillator topology

This paper reports the analyses of the inductive degeneration , noise filter , and optimum current density techniques for phase noise reduction in the CMOS Hartley oscillator circuit topology. The design of the circuit topology is carried out in 28 nm bulk CMOS technology in a range of common conditions adopted also for a previous study on the Colpitts topology, so complementing the previous study on Colpitts topology and allowing a direct comparison between the Hartley and Colpitts topologies. The theoretical analyses of the three techniques are carried out and verified by means of circuit simulations. The results obtained for the inductive degeneration and noise filter show the existence of an optimum inductance for minimum phase noise. Moreover, the results obtained for the optimum bias current density technique applied to a Hartley oscillator circuit topology incorporating either inductive degeneration or noise filter provide the demonstration of the existence of an optimum bias current density for minimum phase noise. Moreover, we will go beyond this important result, by investigating for the first time the relationship with the optimum current density for transistor minimum noise figure and other general results reported in the literature. Overall, the analyses show that the adoption of these techniques may lead to a potential phase noise reduction up to 16 dB at a 1 MHz frequency offset for an oscillation frequency of 10 GHz, with respect to the traditional Hartley topology. Lastly, we report a comparison under common conditions between Colpitts and Hartley topologies implementing the aforementioned techniques, which could, from a designer perspective, be useful to acquiring a few key insights about the circuit design opportunities and focus the design efforts toward specific directions for performance optimizations. Copyright © 2017 John Wiley & Sons, Ltd.     

Survey of integrated‐circuit‐oscillator phase‐noise analysis

This tutorial distills the salient phase‐noise analysis concepts and key equations developed over the last 75 years relevant to integrated circuit oscillators. Oscillator phase and amplitude fluctuations have been studied since at least 1938 when Berstein solved the Fokker–Planck equations for the phase/amplitude distributions of a resonant oscillator. The principal contribution of this work is the organized, unified presentation of eclectic phase‐noise analysis techniques, facilitating their application to integrated circuit oscillator design. Furthermore, we demonstrate that all these methods boil down to obtaining three things: (1) noise modulation function; (2) noise transfer function; and (3) current‐controlled oscillator gain. For each method, this paper provides a short background explanation of the technique, a step‐by‐step procedure of how to apply the method to hand calculation/computer simulation, and a worked example to demonstrate how to analyze a practical oscillator circuit with that method. This survey article chiefly deals with phase‐noise analysis methods, so to restrict its scope, we limit our discussion to the following: (1) analyzing integrated circuit metal–oxide–semiconductor/bipolar junction transistor‐based LC, delay, and ring oscillator topologies; (2) considering a few oscillator harmonics in our analysis; (3) analyzing thermal/flicker intrinsic device‐noise sources rather than environmental/parametric noise/wander; (4) providing mainly qualitative amplitude‐noise discussions; and (5) omitting measurement methods/phase‐noise reduction techniques. Copyright © 2013 John Wiley & Sons, Ltd.     

Phase noise analysis of source injection coupled quadrature oscillator

This paper analyzes the thermally induced phase noise and the up-conversion of flicker noise into phase noise of source injection coupled quadrature oscillator (SIC-QOSC), for the first time. Furthermore, this paper provides a complete analysis for the injection current of the SIC-QOSC and extracts the closed-form expressions for it for the first time, too. These expressions lead to obtaining the harmonics of the injection current as well as the oscillation amplitude, which is necessary for the phase noise analysis. To evaluate the extracted equations, this paper compares the calculated results with appropriate simulations. Comparisons confirm the accuracy of the proposed injection current expressions and the phase noise formulas. Using the closed-form equations of phase noise, designers can understand the SIC-QOSC's design tradeoffs and design the oscillator for given phase noise.     

Thermal and flicker phase noise analysis in rotary traveling-wave oscillator

This paper analyzes the thermally induced phase noise and the up-conversion of flicker noise into phase noise of rotary traveling-wave oscillator (RTWO). Based on the analyses, this paper extracts the closed-form formulas for the thermal and flicker phase noise of the RTWO. This paper compares the theoretical results with appropriate simulations to evaluate the accuracy of the derived closed-form formulas. Comparisons confirm the accuracy of the extracted phase noise formulas. By using the presented straightforward approach along with accurate phase noise formulas, the designers can understand the RTWO ' s design tradeoffs. Also, they can design the RTWO for a specific phase noise without needing lengthy simulations.     

Design of a CMOS 65-nm inductor-less VCO for ISM applications in the VHF band

This paper presents a design of a CMOS cross-coupled voltage-controlled oscillator (VCO) using active inductors (AIs) for wide-band applications and can also be applied to various wireless technologies standards. The compatibility of this design to different wireless standards highlights its potential to be implemented at the core of the communication front end in the Internet of Things (IoT). The proposed AI design employs a gyrator-C topology as the basic structure to generate an inductance. The VCO uses a cross-coupled oscillator structure with a pair of varactors to sweep the frequency. Two extra capacitors, between the AIs and the outputs of the VCO core tank, are employed to enhance the performance of the phase noise and make the VCO work similarly to a linear transconductance (LiT) oscillator. Both the AIs and the VCO are designed in the TSMC 65-nm CMOS technology, and the performance is analyzed using postsimulation results, as well as through measurements. The fundamental frequency spans from 140 to 463 MHz. Thus, the relative tuning range of this design is approximately 107%. The optimal phase noise of the design is around −97 dBc/Hz at 1-MHz offset. Furthermore, it achieves an excellent figure of merit (FOM) around −163 dBc/Hz with a direct current (DC) power consumption less than 3 mW. The proposed design shows an advantage in phase noise and power consumption in comparison with previous active inductor VCO and ring VCO designs, respectively. The final layout occupies only 0.4 × 0.62 mm² including the pads. The proposed AI-VCO shows a compact size, linear tuning, low power consumption, and good phase noise performance.     

A series‐coupled LC quadrature oscillator using phase/amplitude calibration

In this paper, an analytic approach for the estimation of the phase and amplitude error in series coupled LC quadrature oscillator (SC‐QO) is proposed. The analysis results show that imbalances in source voltage of coupling transistor because of mismatches between LC tanks are the main source of the phase and amplitude error in this oscillator. For compensation of the phase and amplitude error, a phase and amplitude‐tunable series coupled quadrature oscillator is designed in this paper. A phase shift generation circuit, designed using an added coupling transistor, can control the coupling transistor source voltage. The phase and amplitude error can simply be controlled and removed by tuning the phase shifter, while this correction does not have undesirable impact on phase noise. In fact, the proposed SC‐QO generates a phase shift in the output current, which reduces the resonator phase shift (RPS) and improves phase noise. The phase and amplitude tunable SC‐QO is able to correct the phase error up to ±12°, while amplitude imbalances are reduced as well. To evaluate the proposed analysis, a 4.5‐GHz CMOS SC‐QO is simulated using the practical 0.18‐μm TSMC CMOS technology with a current consumption of 2 mA at 1.8‐V supply voltage. Copyright © 2016 John Wiley & Sons, Ltd.     

Towards minimum achievable phase noise of relaxation oscillators

A relaxation oscillator design is described, which has a phase noise rivaling ring oscillators, while also featuring linear frequency tuning. We show that the comparator in a relaxation‐oscillator loop can be prevented from contributing to 1/f² colored phase noise and degrading control linearity. The resulting oscillator is implemented in a power efficient way with a switched‐capacitor circuit. The design results from a thorough analysis of the fundamental phase noise contributions. Simple expressions modeling the theoretical phase noise performance limit are presented, as well as a design strategy to approach this limit. To verify theoretical predictions, a relaxation oscillator is implemented in a baseline 65 nm CMOS process, occupying 200 µm × 150 µm. Its frequency tuning range is 1–12 MHz, and its phase noise is L(100kHz) = ?109dBc/Hz at f_osc = 12MHz, while consuming 90 μW. A figure of merit of ?161dBc/Hz is achieved, which is only 4 dB from the theoretical limit. Copyright © 2012 John Wiley & Sons, Ltd.     

A CMOS DCO design using delay programmable differential latches and a novel digital control scheme

A novel 16-bit CMOS digitally controlled oscillator (DCO) is described. This CMOS DCO design is based on a delay programmable differential latch and a novel digital control scheme which yields improved phase noise characteristics. Simulations of a 4-stage CMOS DCO using the 0.5 μm Agilent CMOS process parameters achieved a controllable frequency range of 750 MHz–1.6 GHz with a monotone tuning range of around 1 GHz. Monte Carlo simulations indicate that the time-period jitter due to random supply voltage fluctuations is under 250 ps for worst-case considerations. Also, phase noise was found to be in the range of −175 dBc at a frequency of 600 KHz from the carrier at 1.5 GHz (for digital control word of 1512 H) after numerous iterations of Monte Carlo simulations. FFT analysis indicate a total harmonic distortion (THD) of around − 57 dB for the DCO output signal. This CMOS design would thus provide considerable performance enhancement in digital PLL applications.     

Evaluation and comparison of GHz‐range LC oscillators using time‐varying root‐locus

This paper presents a comprehensive comparison between complementary metal‐oxide‐semiconductor (CMOS) LC‐oscillator topologies often used in GHz‐range transceivers. The comparison utilizes the time‐varying root‐locus (TVRL) method to add new insights into the operation of different oscillators. The paper focuses on the treatment of the TVRL trajectories obtained for different oscillators and establishes links between the trajectories and physical phenomena in oscillators. The evaluation of the root trajectories shows the advantages of the TVRL method for comparing oscillator topologies, which is also extended towards the analysis of voltage‐controlled oscillators. The necessary circuit simplifications required in closed‐form root‐locus analysis are avoided by the TVRL, which allows precise oscillator comparison and reveals details on the topology specifics. The derived conclusions have been verified by the Cadence Spectre‐RF simulator on 130‐nm CMOS process. Copyright © 2011 John Wiley & Sons, Ltd.     

低谐波失真的CMOS正弦波振荡器设计

本文设计了一种具有低谐波失真输出的CMOS正弦波振荡器.该振荡器以RC有源微分电路作为选频回路.在实际电路设计中应计及运算放大器的频率特性,由此可得RC有源微分电路为二阶高Q电路.该电路具有良好的选频特性,大幅降低了振荡器输出的谐波失真,并配合移相和可变增益电路以满足振荡器起振条件.使用本文设计的CMOS运算放大器,该振荡器可起振的带宽可达200 Hz~2 MHz,其谐波失真小于通带噪声.以输出正弦波频率为100 kHz为例,给出了Hspice仿真结果.     

Low‐frequency noise analysis and minimization in Gilbert‐cell‐based mixers for direct‐conversion (zero‐IF) low‐power front‐ends

Low‐frequency (flicker) noise is one of the most important issues in the design of direct‐conversion zero‐IF front‐ends. Within the front‐end building blocks, the direct‐conversion mixer is critical in terms of flicker noise, since it performs the signal down‐conversion to baseband. This paper analyzes the main sources of low‐frequency noise in Gilbert‐cell‐based direct‐conversion mixers, and several issues for minimizing the flicker noise while keeping a good mixer performance in terms of gain, noise figure and power consumption are introduced in a quantitative manner. In order to verify these issues, a CMOS Gilbert‐cell‐based zero‐IF mixer has been fabricated and measured. A flicker noise as low as 10.4 dB is achieved (NF at 10 kHz) with a power consumption of only 2 mA from a 2.7 V power supply. More than 14.6 dB conversion gain and noise figure lower than 9 dB (DSB) are obtained from DC to 2.5 GHz with an LO power of ?10 dBm, which makes this mixer suitable for a multi‐standard low‐power zero‐IF front‐end. Copyright © 2008 John Wiley & Sons, Ltd.     

A linearized and low noise CMOS mixer with B‐type amplifier‐based sub‐harmonic balun

A low noise and high linearity down‐conversion CMOS mixer for 2.4‐GHz wireless receiver is presented in this paper. Using a sub‐harmonic balun with a simple but effective B‐type amplifier, the local oscillator frequency required for this mixer has been reduced by half, and the input local oscillator signal could be single‐ended rather than differential, which simultaneously simplifies the design of local oscillator. A distortion and noise cancelation transconductor in association with current bleeding technique is employed to improve the noise and linearity of the entire mixer under a reduced bias current without compromising the voltage gain. Fabricated in a 0.18‐µm RF CMOS technology of Global Foundries, the mixer demonstrates a voltage gain of 15.8 dB and input‐referred third‐order intercept point of 6.6 dBm with a noise figure of 2.6 dB. It consumes 7.65 mA from a 1.0‐V supply and occupies a compact area of 0.75 × 0.71 mm² including all test pads. Copyright © 2016 John Wiley & Sons, Ltd.     

Analysis and design of LC oscillators associated with frequency multipliers: a phase noise perspective

When a local oscillator signal generation system is based on an LC oscillator and a frequency multiplier, the question of determining the optimal multiplication factor is a key issue. In this paper, the problem is addressed in order to minimize the 1/f ² phase noise within a tuning range constraint. The analysis, with a practical graphical representation, reveals the oscillator phase noise dependence on the oscillating frequency in the transition from two different regimes, named the inductor‐limited quality factor and the capacitor‐limited quality factor. The results obtained enable the evaluation of the phase noise performance of systems based on a sub‐harmonic and super‐harmonic oscillators and how they compare with an oscillator in the fundamental mode. Crucial questions like the phase noise improvement that these systems can achieve are analytically answered. A design methodology is thus proposed and verified through measurements on a frequency source at 31 GHz, composed by a sub‐harmonic voltage‐controlled oscillator followed by an injection‐locked frequency tripler, dedicated to backhauling applications, designed on a BiCMOS process technology. The tuning range is 10%, and the phase noise at a 1‐MHz offset is −112 dBc/Hz. Copyright © 2017 John Wiley & Sons, Ltd.     

Low‐power quadrature generators for body area network applications

This paper presents different alternatives for the implementation of low‐power monolithic oscillators for wireless body area networks and describes the design of two quadrature generators operating in the 2.4‐GHz frequency range. Both implementations have been designed in a 90‐nm Complementary Metal‐Oxide Semiconductor (CMOS) technology and operate at 1 V of supply voltage. The first architecture uses a voltage‐controlled oscillator (VCO) running at twice the desired output frequency followed by a divider‐by‐2 circuit. It experimentally consumes 335 μW and achieves a phase noise of ?110.2 dBc/Hz at 1 MHz. The second architecture is a quadrature VCO that uses reinforced concrete phase shifters in the coupling path for phase noise improvement. Its power consumption is only 210 μW, and it obtains a phase noise of ?111.9 dBc/Hz at 1 MHz. Copyright © 2011 John Wiley & Sons, Ltd.