Output‐capacitorless segmented low‐dropout voltage regulator with controlled pass transistors

This article presents a low quiescent current output‐capacitorless quasi‐digital complementary metal‐oxide‐semiconductor (CMOS) low‐dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade‐off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post‐simulated in HSPICE in a 0.18 µm CMOS process to supply a stable load current between 0 and 100 mA with a 40 pF on‐chip output capacitor, while consuming 4.8 μA quiescent current. The dropout voltage of the LDO is set to 200 mV for 1.8 V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively. Copyright © 2015 John Wiley & Sons, Ltd.     

A transient‐improved low‐dropout regulator with nested flipped voltage follower structure

In this article, the existing low‐dropout regulator (LDO) based on cascoded flipped voltage follower (CAFVF) is reviewed. A new method to simulate the open‐loop gain of an LDO with a CAFVF structure is conveyed. The drawback of CAFVF‐based LDO is that the nondominant pole locates at low‐frequency and pole‐zero cancellation using a large equivalent series resistance of loading capacitor is required for stability. To tackle this problem, a novel LDO structure based on a nested CAFVF is proposed and analyzed in this article. It is shown that the nondominant pole is pushed to a high frequency and the LDO stability is improved. The proposed circuit is fabricated using a commercial 0.35‐µm CMOS technology, and the load‐transient response between 0.5 and 60 mA settles at approximately 5 µs. Copyright © 2012 John Wiley & Sons, Ltd.     

Gain compression improvement on low‐power cascaded current reuse LNAs

Current reuse low‐noise‐amplifiers (CRLNAs) have been the norm to achieve high‐gain and low‐noise figure under low‐power budgets. However, conventional CRLNAs suffer from a severe lack of large‐signal linearity, especially in conventional cascaded CRLNAs. This main drawback is related with the typical biasing method imposed in the output stage. To prove our point, a large‐signal study is performed for a single stage common‐source in two distinct biasing situations: voltage biased and current biased. On the basis of the gathered results, a new CRLNA solution is proposed to relief the large‐signal bottleneck. The suggested design is analyzed in a 0.13 µm complementary metal–oxide–semiconductor (CMOS) standard process. Post‐layout simulations show 8 dB compression point improvement compared with the conventional CRLNA solution. The CRLNA draws a current of 650 μA from a 1.2 V supply. At 2.45 GHz, a power gain of 25.3 dB and a NF of 2.3 dB are achieved, while the IIP3 is ?9 dBm. Copyright © 2016 John Wiley & Sons, Ltd.     

A 300‐mA load CMOS low‐dropout regulator without an external capacitor for SoC and embedded applications

This study proposes a 300‐mA external capacitor‐free low‐dropout (LDO) regulator for system‐on‐chip and embedded applications. To achieve a full‐load range from 0 to 300 mA, a two‐scheme (a light‐load case and a heavy‐load case) operation LDO regulator with a novel control circuit is proposed. In the light‐load case (0–0.5 mA), only one P‐type metal–oxide–semiconductor input‐pair amplifier with a 10‐pF on‐chip capacitor is used to obtain a load current as low as 0. In the heavy‐load case (0.5 to 300 mA), both P‐type metal–oxide–semiconductor and N‐type metal–oxide–semiconductor differential input‐pair amplifiers with an assistant push‐pull stage are utilized to improve the stability of the LDO regulator and achieve a high slew rate and fast‐transient response. Measurements show an output voltage of 3.3 V and a full output load range from 0 to 300 mA. A line regulation of 1.66 mV/V and a load regulation of 0.0334 mV/mA are achieved. The measured power‐supply rejection ratio at 1 kHz is −65 dB, and the measured output noise is only 34 μV. The total active chip size is approximately 0.4 mm² with a standard 0.5 μm complementary metal–oxide–semiconductor process. Copyright © 2017 John Wiley & Sons, Ltd.     

A low‐dropout voltage regulator with active current amplifier frequency compensation

This paper presents a new compensation scheme of low‐dropout regulator (LDO) design over the conventional methodology. With only 0.3 pF on‐chip compensation capacitor, a left‐half‐plane zero is realized within the regulation loop unity‐gain bandwidth and over 56 ^° phase margin is achieved under the full range of the load current. The LDO thus achieves stability without using the equivalent series resistance of the capacitor. It is proven experimentally that the proposed LDO has many attractive features such as high accuracy, low quiescent current, and smaller compensation capacitor. The measurement results show that the excellent performance can be comparable with the state of the art LDOs. Copyright © 2010 John Wiley & Sons, Ltd.     

A subthreshold current‐sensing ΣΔ modulator for low‐voltage and low‐power sensor interfaces

A continuous‐time (CT) ΣΔ modulator for sensing and direct analog‐to‐digital conversion of nA‐range (subthreshold) currents is presented in this work. The presented modulator uses a subthreshold technique based on subthreshold source‐coupled logic cells to efficiently convert subthreshold current to digital code without performing current‐to‐voltage conversion. As a benefit of this technique, the current‐sensing CT ΣΔ modulator operates at low voltage and consumes very low power, which makes it convenient for low‐power and low‐voltage current‐mode sensor interfaces. The prototype design is implemented in a 0.18 µm standard complementary metal‐oxide semiconductor technology. The modulator operates with a supply voltage of 0.8 V and consumes 5.43 μW of power at the maximum bandwidth of 20 kHz. The obtainable current‐sensing resolution ranges from effective number of bits (ENOB) = 7.1 bits at a 5 kHz bandwidth to ENOB = 6.5 bits at a 20 kHz bandwidth (ENOB). The obtained power efficiency (peak FoM = 1.5 pJ/conv) outperforms existing current‐mode analog‐to‐digital converter designs and is comparable with the voltage‐mode CT ΣΔ modulators. The modulator generates very low levels of switching noise thanks to CT operation and subthreshold current‐mode circuits that draw a constant subthreshold current from the voltage supply. The presented modulator is used as a readout interface for sensors with current‐mode output in ultra low‐power conditions and is also suitable to perform on‐chip current measurements in power management circuits. Copyright © 2014 John Wiley & Sons, Ltd.     

A novel low‐power receiver topology for RF and microwave applications

A novel low‐power receiver topology for radio‐frequency and microwave applications is presented. The proposed solution exploits a simple connection between the low‐noise amplifier and the subsequent mixer, which is realized by means of a high‐value resistor and a current mirror, achieving low noise and high linearity performance with an extremely low power consumption. The criteria for its optimal design are derived in order to accomplish the main trade‐offs among noise figure (NF), linearity, and current consumption performance. As a case of study, the new topology has been designed in the case of I/Q direct conversion receiver for IEEE 802.15.4 standard (ZigBee) applications at 2.45 GHz. The receiver exhibits a NF of 8.7 dB, 50Ω input impedance, a voltage gain of 26 dB, an input‐referred third‐order intercept point of ?13 dBm, and a power consumption of 8.6 mW, which represent one of the best performance trade‐offs obtained in the literature. Copyright © 2008 John Wiley & Sons, Ltd.     

A low‐voltage band‐gap reference circuit with second‐order analyses

A new band‐gap reference (BGR) circuit employing sub‐threshold current is proposed for low‐voltage operations. By employing the fraction of V_BE and the sub‐threshold current source, the proposed BGR circuit with chip area of 0.029mm² was fabricated in the standard 0.18µm CMOS triple‐well technology. It generates reference voltage of 170 mV with power consumption of 2.4µW at supply voltage of 1 V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3 mV for temperatures from ?20 to 100^°C, and 1.1 mV per volt for supply voltage from 0.95 to 2.5 V, respectively. Copyright © 2010 John Wiley & Sons, Ltd.     

CMOS high‐precision loser‐take‐all circuit

This paper presents a new current‐mode CMOS loser‐take‐all circuit. The proposed circuit consists of a basic cell that allows implementation of a multi‐input configuration by repeating the cell for each additional input. A high‐speed feedback structure is employed to determine the minimum current among the applied inputs. The significant feature of the circuit is its high accuracy and high‐speed operation. Additionally, the input dynamic range of the circuit can be efficiently controlled via the biasing current. HSPICE simulation results are presented to verify the performance of the circuit, where under a supply voltage of 2.5 V, bias current of 100 µA, and frequency of 10 MHz, the input dynamic range increases within 0–100 µA and the corresponding error remains as low as 0.4%. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Low energy/delay overhead level shifter for wide‐range voltage conversion

Multi‐supply voltage systems on chip have been widely explored for energy‐efficient elaborations. A main challenge of multi‐supply voltage designs is the interfacing of digital signals coming from ultra‐low‐voltage core logics to higher power supply domains and/or to input/output circuits. In this work, we propose an energy/delay‐efficient level shifter architecture that is capable of converting extremely low levels of input voltages to the nominal voltage domain. In order to limit static power, the proposed circuit is based on the single‐stage differential cascode voltage switch scheme. To improve switching speed and dynamic energy consumption, our design dynamically adapts the current sourced by the pull‐up network on the basis of the occurring transition. A test chip was fabricated in 180 nm complementary metal–oxide–semiconductor technology to verify the proposed technique. Measurement results show that our design is capable of converting 100 mV of input voltages to 1.8 V, while assuring an average propagation delay of about 26 ns, an average static power of 100 pW, and an energy per transition of 140 fJ for the target voltage‐level conversion from 0.4 to 1.8 V. Copyright © 2016 John Wiley & Sons, Ltd.     

Gate‐level body biasing technique for high‐speed sub‐threshold CMOS logic gates

An efficient technique for designing high‐performance logic circuits operating in sub‐threshold region is proposed. A simple gate‐level body biasing circuit is exploited to change dynamically the threshold voltage of transistors on the basis of the gate status. Such an auxiliary circuit prepares the logic gate for fast switching while maintaining energy efficiency. If 200 aJ is the target total energy per operation consumption, a two input NAND (NOR) gate designed as described here shows a delay reduction between 20% (16%) and 40% (48%), with respect to previously proposed sub‐threshold approaches. Copyright 2012 John Wiley & Sons, Ltd.     

A low‐power technique for high‐resolution dynamic comparators

A low‐power technique for high‐resolution comparators is introduced. In this technique, p‐type metal‐oxide‐semiconductor field‐effect transistors are employed as the input of the latch of the comparator just like the input of the preamplifier. The latch and preamplifier stages are activated in a special pattern using an inverter‐based controller. Unlike the conventional comparator, the preamplification delay can be set to an optimum low value even if after the preamplification, the output voltages is less than n‐channel metal‐oxide semiconductor voltage threshold. As a result, the proposed comparator reduces the power consumption significantly and enhances the speed. The speed and power benefits of the proposed comparator were verified using analytical derivations, PVT corners, and post layout simulations. The results confirm that the introduced technique reduces the power consumption by 60%, also, provides 57% better comparison speed for an input common mode voltage (V_cm) range of 0‐Vdd/2.     

Low‐frequency noise analysis and minimization in Gilbert‐cell‐based mixers for direct‐conversion (zero‐IF) low‐power front‐ends

Low‐frequency (flicker) noise is one of the most important issues in the design of direct‐conversion zero‐IF front‐ends. Within the front‐end building blocks, the direct‐conversion mixer is critical in terms of flicker noise, since it performs the signal down‐conversion to baseband. This paper analyzes the main sources of low‐frequency noise in Gilbert‐cell‐based direct‐conversion mixers, and several issues for minimizing the flicker noise while keeping a good mixer performance in terms of gain, noise figure and power consumption are introduced in a quantitative manner. In order to verify these issues, a CMOS Gilbert‐cell‐based zero‐IF mixer has been fabricated and measured. A flicker noise as low as 10.4 dB is achieved (NF at 10 kHz) with a power consumption of only 2 mA from a 2.7 V power supply. More than 14.6 dB conversion gain and noise figure lower than 9 dB (DSB) are obtained from DC to 2.5 GHz with an LO power of ?10 dBm, which makes this mixer suitable for a multi‐standard low‐power zero‐IF front‐end. Copyright © 2008 John Wiley & Sons, Ltd.     

A 0.6‐V sub‐mW X‐band RFSOI CMOS LNA with novel complementary current‐reused technique

A fully integrated 0.6 V low‐noise amplifier (LNA) for X‐band receiver application based on 0.18 μm RFSOI CMOS technology is presented in this paper. To achieve low noise and high gain with the constraint of low voltage and low power consumption, a novel modified complementary current‐reused LNA using forward body bias technique is proposed. A diode connected MOSFET forward bias technique is employed to minimize the body leakage and improve the noise performance. A notch filter isolator is constructed to improve the linearity of low voltage. The measured results show that the proposed LNA achieves a power gain of 11.2 dB and a noise figure of 3.8 dB, while consuming a DC current of only 1.6 mA at supply voltage of 0.6 V. Copyright © 2017 John Wiley & Sons, Ltd.     

A current‐mode 1kHz/10kHz low‐voltage integrated analogue PLL for lock‐in portable applications

We present a low‐supply voltage (2V) low‐power consumption (500W) analogue phase‐locked loop (PLL), working at two low frequencies (1 and 10kHz), to be used in an integrated lock‐in amplifier. An externally settable control bit allows the switching operation between the two different frequencies. The circuit has been designed in a standard 0.6–m CMOS technology and differs from the standard analogue PLL architectures for the current mode implementation of both the loop filter and of the oscillator. Three different locked waveforms (sinusoidal, triangular, squared) can be obtained at the PLL output. Simulation results, obtained through the use of PSPICE and using accurate transistor models, will be proposed. The pull‐in ranges are about ±250Hz around 1 and ±1.3kHz around 10kHz, with pull‐in times of about 10 and 4ms, respectively. Copyright © 2003 John Wiley & Sons, Ltd.     

Low‐power,low‐area preamplifier for ultra high‐speed multi‐channel optical communication system

A novel circuit technique was applied to the design of a preamplifier for ultra high‐speed short‐distance parallel optical communication system in standard 180‐nm CMOS technology. This circuit is featured by low power, low area as well as high gain bandwidth product, and suited for applications in low‐cost process. The restraint on voltage headroom as bottleneck in traditionally adopted regulated cascode configuration has been fundamentally analyzed and lifted by feed‐forward common gate stage to achieve high gain bandwidth product under limited f_T and strict power restriction. Complex poles were carefully assigned to further attain bandwidth extension without sacrifice on power, noise, and chip area. No additional peaking techniques and subsequent gain‐boosting stages are adopted, which makes the design simple and favorable in low‐cost high‐density multi‐channel optical communication system. The preamplifier provides a trans‐impedance gain of up to 52 dBΩ and a 3‐dB bandwidth of 8.4 GHz. Operating under a 1.8‐V supply, the power dissipation is 8 mW, and the chip area is only 0.075×0.08 mm. The measured average input‐referred noise–current spectral density is . Copyright © 2011 John Wiley & Sons, Ltd.     

Low‐power and low‐noise complementary metal oxide semiconductor distributed amplifier using the gain‐peaking technique

This paper presents an improved topology for ultra‐low‐power complementary metal oxide semiconductor (CMOS) distributed amplifier (DA) based on modified folded cascode gain cells. The proposed CMOS‐DA can be applicable in low‐supply‐voltage applications, because of the use of folded gain cell's structure. The proposed DA decreases power consumption by employing the forward body biasing network, while maintains high gain. By using a gain‐peaking inductor at the gate of the transistor, the proposed DA structure achieved to the gain flatness in high frequencies while the bandwidth is improved as well. In addition, employing RC network at the body terminal improves the noise performance of the proposed DA. The DA architecture consists of three amplification stages. Detailed analysis is provided for the proposed folded cascode DA. According to the post‐layout simulation results of the proposed amplifier using a 0.13‐µm CMOS process, DA achieves power gain of 17.3 ± 0.8 dB in bandwidth of 14.5 GHz, a good input third‐order intercept point (IIP3) of +5.5 dBm. The minimum noise figure is 1.8–5 dB, and input and output return losses are less than −11.5 dB and −10 dB, respectively, and the proposed structure consumes 12 mW from a 0.5 V voltage supply. Copyright © 2016 John Wiley & Sons, Ltd.     

A duplex current‐reused CMOS LNA with complementary derivative superposition technique

A duplex current‐reused complementary metal–oxide–semiconductor low‐noise amplifier (LNA) is proposed for 2.5‐GHz application. The duplex current‐reused topology with equivalent three common‐source gain stages cascaded is utilized to fulfil the low‐power consumption and high gain simultaneously. The complementary derivative superposition linearization technique with bulk‐bias control is employed to improve the linearity performance with large‐signal swing and to extend the auxiliary transistors bias‐control range. The proposed LNA is fabricated in a 0.18‐um 1P5M complementary metal–oxide–semiconductor process and consumes a 3.13‐mA quiescent current from a 1.5 V voltage supply. The measurement results show that the proposed LNA achieves power gain of 28.1 dB, noise figure of 1.64 dB, input P1dB and IIP3 of −19.6 dBm and 3.2 dBm, respectively, while the input and output return loss is 19.2 dB and 18.4 dB. Copyright © 2016 John Wiley & Sons, Ltd.     

A fully‐integrated CMOS UWB transceiver for ultra‐low‐power short‐range application

In short‐range UWB communication systems, the low‐power design is the most important issue to make UWB technology attractive. A novel trigger receiving algorithm for UWB signals is proposed, which can reduce the system power significantly at the cost of slight performance degrade. A UWB transceiver based on the trigger receiving algorithm is designed and fabricated in HJTC 0.18 µm CMOS process with a total size of 0.45 mm². The experimental results show that the total power consumption of the transceiver is only 12 mW at 100 Mb/s data rate from a 1.8 V supply, making it suitable for low‐power short‐range communication. Copyright © 2010 John Wiley & Sons, Ltd.     

Design of a low‐power high open‐loop gain operational amplifier for capacitively‐coupled instrumentation amplifiers

We present the design of a low‐power high open‐loop gain opamp for use in chopper‐stabilized capacitively coupled instrumentation amplifiers (CCIAs). The opamp utilizes the current‐reuse folded‐cascode topology and a low‐power gain‐boosting technique to maximize its power efficiency and open‐loop gain. The proposed technique is applied to the designs of two CCIAs: the conservative CCIA with a moderate current scaling ratio and the stringent CCIA with a very high current scaling ratio. Utilizing the current scaling ratio of 4:1, the conservative CCIA, designed and fabricated in a 0.18 μ m CMOS process, consumes a total current of 1.69 μ A from a 0.8‐V supply voltage and achieves a thermal noise floor of 56.5 nV/ . Utilizing the current scaling ratio of 38:1, the stringent CCIA, designed and simulated in a 0.13 μ m CMOS process, consumes a total current of 1.4 μ A and achieves a thermal noise floor of 48 nV/ . The proposed design technique should benefit the designs of low‐power instrumentation amplifiers in advanced processes in which channel‐length modulation and the limited current consumption and supply voltage make the designs of high open‐loop gain opamps difficult. Copyright © 2017 John Wiley & Sons, Ltd.