首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
The fabrication of reliable isotopic nitrogen standards is achieved in Si through 14N and 15N ion implantation. 60 keV and ions were implanted at 400 °C up to ∼60% peak atomic concentration, yielding nitrogen-saturated silicon layers as measured using resonant nuclear reaction analysis. No isotopic effect has been observed. The nitrogen standards are validated by measurements of stability under ion irradiation. No significant desorption of nitrogen is observed either under a 4He+ ion fluence of 3.36 × 1016 cm−2 or under a 1H+ ion fluence of 8.60 × 1017 cm−2, giving strong evidence that isotopic nitrogen standards can be achieved.  相似文献   

2.
The temperature dependences of the ion-induced electron emission yield γ(T), the crystal structure, and the morphology of a surface layer of the one-dimensional carbon fiber composite KUP-VM (1D) under high-fluence (1018-1019 ion/cm2) irradiation with 30 keV ions at normal incidence both perpendicular and parallel to the fiber directions have been studied. The target temperature has been varied during continuous irradiation from T = −180 to 400 °C. The surface analysis has been performed by the RHEED, SEM and RBS techniques. The surface microgeometry was studied using laser goniophotometry (LGP). It has been found that ion irradiation results in a loss of anisotropy of the surface layer structure because of amorphization at room temperature or recrystallization at a temperature higher than the ion-induced annealing temperature. The fiber morphology anisotropy remains under ion irradiation.  相似文献   

3.
Several targets that consist of atomic species X (X = N, O, Cl, S, Br) adsorbed at hollow sites on the Cu(1 0 0) surface have been examined with low-fluence secondary ion mass spectrometry (SIMS). The positive and negative secondary ion (SI) abundance distributions, which show a range of characteristics, have been discussed with the aid of thermochemical data derived from ab initio calculations. In positive SIMS, CuX+ is never observed, while the only heteronuclear (mixed-atom) SI that is observed for all five systems is Cu2X+. In negative SIMS, the dominant heteronuclear species for all systems is , except for N/Cu(1 0 0), which produces no , ions. Cu emission is observed only for O/Cu(1 0 0). By analogy with results from laser ablation studies of O/Cu targets, it is conjectured that Cu is a daughter product of the gas-phase dissociation of polyatomic Cu-O anion clusters.  相似文献   

4.
The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5D07F2 transition in Eu3+ kept the initial PL intensity after the proton irradiation up to . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment.  相似文献   

5.
This paper deals with the study of oxidation kinetics and the identification of oxygen diffusion coefficients of low-tin Zy-4 alloy at intermediate (973 K ? T ? 1123 K) and high temperatures (T ? 1373 K). Two different cases were considered: dissolution of a pre-existing oxide layer in the temperature range 973 K ? T ? 1123 K and oxidation at T ? 1373 K. The results are the following ones: in the temperature range 973-1123 K, the oxygen diffusion coefficient in αZr phase can be expressed as Dα = 6.798 exp(−217.99 kJ/RT) cm2/s. In the temperature range 1373-1523 K, the oxygen diffusion coefficients in αZr, βZr and ZrO2, were determined using an ‘inverse identification method’ from experimental high temperature oxidation data (i.e., ZrO2, and αZr(O) layer thickness measurements); they can be expressed as follows: Dα = 1.543 exp(−201.55 kJ/ RT) cm2/s, Dβ = 0.0068 exp(−102.62 kJ/ RT) cm2/s and DZrO2=0.115exp(143.64kJ/RT)cm2/s. Finally an oxygen diffusion coefficient in αZr in the temperature range 973 K ? T ? 1523 K was determined, by combining the whole set of results: Dα = 4.604exp(−214.44 kJ/RT) cm2/s. In order to check these calculated diffusion coefficients, oxygen concentration profiles were determined by Electron Probe MicroAnalysis (EPMA) in pre-oxidized low-tin Zy4 alloys annealed under vacuum at three different temperatures 973, 1073 and 1123 K for different times, and compared to the calculated profiles. At last, in the framework of this study, it appeared also necessary to reassess the Zr-O binary phase diagram in order to take into account the existence of a composition range in the two zirconia phases, αZrO2 and βZrO2.  相似文献   

6.
ITER strike-plates are foreseen to be of carbon-fiber-composite (CFC). In this study the CFC bulk deuterium retention in ITER-relevant conditions is investigated. DMS 701 (Dunlop) CFC targets were exposed to plasma in PISCES-B divertor plasma simulator. Samples were exposed to both pure deuterium plasma and beryllium-seeded plasma at high fluences (up to ) and high surface temperature (1070 K). The deuterium contents of the exposed samples have been measured using both thermal-desorption-spectrometry (TDS) during baking at 1400 K and ion beam nuclear reaction analysis (NRA). The total deuterium inventory has been obtained from TDS while NRA measured the deuterium depth distribution. In the analysed fluence range at target temperature of 1070 K, no fluence dependence was observed. The measured released deuterium is . In the case of target exposure with beryllium-seeded plasma no change in the released amount of deuterium was found. The deuterium concentration inside the samples is almost constant until the probed depth of ?m, except in the first 1 μm surface layer, where it is 5 times higher than in the bulk. No C erosion/redeposition was observed in the Be-seeded plasma cases. The measured retention, applied to 50 m2 of ITER CFC surface, would imply a tritium saturated value of 0.3 gT, much lower than the ITER safety limit of 350 g.  相似文献   

7.
8.
Leaching experiments were performed on UO2 pellets doped with alpha-emitters (238/239Pu) and on spent fuel, in the presence of an external gamma irradiation source (A60Co = 260 Ci,  Gy h−1). The effects of α, β, γ radiation, the fuel chemistry and the nature of the cover gas (aerated or Ar + 4%H2) on water radiolysis and on oxidizing dissolution of the UO2 matrix are quantified and discussed. For the doped UO2 pellets, the nature of the cover gas clearly has a major role in the effect of gamma radiolysis. The uranium dissolution rate in an aerated medium is 83 mg m−2 d−1 compared with only 6 mg m−2 d−1 in Ar + 4%H2. The rate drop is accompanied by a reduction of about four orders of magnitude in the hydrogen peroxide concentrations in the homogeneous solution. The uranium dissolution rates also underestimate the matrix alteration rate because of major precipitation phenomena at the UO2 pellet surface. The presence of studtite in particular was demonstrated in aerated media; this is consistent with the measured H2O2 concentrations (1.2 × 10−4 mol L−1). For spent fuel, the presence of fission products (Cs and Sr), matrix alteration tracers, allowed us to determine the alteration rates under external gamma irradiation. The fission product release rates were higher by a factor of 5-10 than those of the actinides (80-90% of the actinides precipitated on the surface of the fragments) and also depended to a large extent on the nature of the cover gas. No significant effect of the fuel chemistry compared with UO2 was observed on uranium dissolution and H2O2 production in the presence of the 60Co source in aerated conditions. Conversely, in Ar + 4%H2 the fuel self-irradiation field cannot be disregarded since the H2O2 concentrations drop by only three orders of magnitude compared with UO2.  相似文献   

9.
The degree of embrittlement of the reactor pressure vessel (RPV) limits the lifetime of nuclear power plants. Therefore, neutron irradiation-induced embrittlement of RPV steels demands accurate monitoring. Current federal legislation requires a surveillance program in which specimens are placed inside the RPV for several years before their fracture toughness is determined by destructive Charpy impact testing. Measuring the changes in the thermoelectric properties of the material due to irradiation, is an alternative and non-destructive method for the diagnostics of material embrittlement. In this paper, the measurement of the Seebeck coefficient () of several Charpy specimens, made from two different grades of 22 NiMoCr 37 low-alloy steels, irradiated by neutrons with energies greater than 1 MeV, and fluencies ranging from 0 up to 4.5 × 1019 neutrons per cm2, are presented. Within this range, it was observed that increased by ≈500 nV/°C and a linear dependency was noted between and the temperature shift ΔT41 J of the Charpy energy vs. temperature curve, which is a measure for the embrittlement. We conclude that the change of the Seebeck coefficient has the potential for non-destructive monitoring of the neutron embrittlement of RPV steels if very precise measurements of the Seebeck coefficient are possible.  相似文献   

10.
A new phase PuPdSn was prepared and studied by X-ray diffraction, magnetization and heat capacity measurements, performed in the temperature range 2-300 K and in magnetic fields up to 14 T. The crystal structure determined from single-crystal X-ray data is the hexagonal ZrNiAl-type [space group ] with lattice parameters: a = 7.5057 Å and c = 4.0853 Å. PuPdSn orders antiferromagnetically at TN = 21 K. Moreover, another antiferromagnetic-like transition takes place at 9.6 K. Above TN the susceptibility follows a modified Curie-Weiss law with μeff = 1.0 μB, Θp = −14 K and χ0 = 2.1 × 10−4 emu/mol. The low-temperature linear specific heat coefficient is small (γ ∼ 8 mJ/mol K2) pointing to well localized 5f electrons.  相似文献   

11.
Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions (energy E = 350 MeV, fluences of 107 cm−2 and 108 cm−2) and silicon diodes irradiated with electrons (energy E = 3.5 MeV, fluences of 1015 cm−2, 5 × 1015 cm−2 and 1016 cm−2) have been investigated. Frequency dependences of the impedance, current-voltage characteristics and switching characteristics of these devices have been studied. Irradiation of the diodes with 197Au+26 ions at a fluence of 108 cm−2 leads to the formation of a quasi-continuous layer of irradiation-induced defects that enable a combination of characteristics such as a reverse resistance recovery time and direct voltage drop that are better than those for electron-irradiated diodes. Still, the irradiation of high-energy ions results in an increase in recombination currents that are larger than those obtained with electron irradiation, and causes more complicated frequency dispersion of the diode parameters.  相似文献   

12.
Linear free energy relationships for trivalent cations with crystalline M2O3 and, M(OH)3 phases of lanthanides and actinides were developed from known thermodynamic properties of the aqueous trivalent cations, modifying the Sverjensky and Molling equation. The linear free energy relationship for trivalent cations is as , where the coefficients aMvX, bMvX, and βMvX characterize a particular structural family of MvX, rM3+ is the ionic radius of M3+ cation, is the standard Gibbs free energy of formation of MvX and is the standard non-solvation free energy of the cation. The coefficients for the oxide family are: aMvX = 0.2705, bMvX = −1984.75 (kJ/mol), and βMvX = 197.24 (kJ/mol nm). The coefficients for the hydroxide family are: aMvX = 0.1587, bMvX = −1474.09 (kJ/mol), and βMvX = 791.70 (kJ/mol nm).  相似文献   

13.
Colour centers formation in Al2O3 by reactor neutrons were investigated by optical measurements (absorption and photoluminescence). The irradiation’s were performed at 40 °C, up to fast neutron (En > 1.2 MeV) fluence of 1.4 × 1018 n cm−2. After irradiation the coloration of the sample increases with the neutron fluence and absorption band at about 203, 255, 300, 357 and 450 nm appear in the UV-visible spectrum. The evolution of each absorption bands as a function of fluence and annealing temperature is presented and discussed. The results indicate that at higher fluence and above 350 °C the F+ center starts to aggregate to F center clusters (F2, F2+ and ). These aggregates disappear completely above 650 °C whereas the F and F+ centers persist even after annealing at 900 °C. It is clear also from the results that the absorption band at 300 nm is due to the contribution of both F2 center and interstitial ions.  相似文献   

14.
The diffusion of La, a trivalent cation dopant, actinide surrogate, and high-yield fission product, in CeO2, a UO2 nuclear fuel surrogate, during 1.8 MeV Kr+ ion bombardment over a temperature range from 673 K to 1206 K has been measured with secondary ion mass spectroscopy. The diffusivity under these irradiation conditions has been analyzed with a model based on a combination of sink-limited and recombination-limited kinetics. This analysis yielded a cation vacancy migration energy of  ∼ 0.4 eV below ∼800 K, were recombination-limited kinetics dominated the behavior. The thermal diffusivity of La in the same system was measured over a range of 873-1073 K and was characterized by an activation enthalpy of . The measurement of both the migration enthalpy and total activation enthalpy separately allows the vacancy formation enthalpy on the cation sublattice to be determined;  ∼ 1 eV. The mixing parameter under energetic heavy-ion bombardment at room temperature was measured as well and found to be ∼4 × 10−5 nm5/eV.  相似文献   

15.
16.
17.
Single crystal 〈0 0 0 1〉-oriented 6H-SiC was irradiated with Au2+ ions to fluences of 0.032, 0.058 and 0.105 ions/nm2 at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in situ D+ ion channeling along the 〈0 0 0 1〉 and 〈〉 axes. A higher level of disorder on both the Si and C sublattices is observed along the 〈〉. There is a preferential C disordering and more C interstitials are aligned with 〈0 0 0 1〉. Room-temperature recovery along 〈〉 occurs, which is associated with the 〈0 0 0 1〉-aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with 〈0 0 0 1〉 and to epitaxial crystallization. Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au2+-irradiated 6H-SiC and 4H-SiC are observed.  相似文献   

18.
Carbon cluster ions (n = 1-5) and Cl+, Ti+, Ni+ ions were used to bombard polycarbonate (PC) films. By comparing the electronic energy loss and the number of chromophores at a fixed wavelength, we obtained the electronic energy loss Se of carbon cluster ions in PC.  相似文献   

19.
20.
Two types of porous plasma spray tungsten coatings deposited onto stainless steel and graphite substrates were exposed to low-energy (76 eV ), high-flux (1022 D/m2 s) D plasma to ion fluences of (3-4) × 1026 D/m2 at various temperatures. Deuterium retention in the W coatings was examined by thermal desorption spectroscopy and the D(3He,p)4He nuclear reaction, allowing determination of the D concentration at depths up to 7 μm. The relatively high D concentration (above 0.1 at.%) at depths of several micrometers observed after D plasma exposure at 340-560 K can be related to accumulation of D2 molecules in pores, while at temperatures above 600 K deuterium is accumulated mainly in the form of D atoms chemisorbed on the inner pore surfaces. At exposure temperatures above 500 K, the D retention in the plasma spray W coating on graphite substrate increases significantly due to trapping of diffusing D atoms at carbon dangling bonds located at the edge of a graphite crystallite.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号