多晶硅太阳电池少子寿命的数值模拟

主要引入载流子的有效迁移率和有效扩散长度两个物理量,对多晶硅的少子寿命进行数值模拟.在此基础上建立了多晶硅太阳电池的一维物理模型,采用数值模拟方法对其在AM1.5太阳光入射下的电池输出特性Lsc、Voc、FF和η进行模拟计算,着重分析了晶粒尺寸和基区少子寿命对多晶硅太阳电池性能的影响.模拟结果表明,晶粒尺寸和少子寿命是影响多晶硅太阳电池性能的两个关键因素.当少子寿命较低时,晶粒尺寸对电池效率的影响不大,此时电池效率的提高受限于少子寿命;当少子寿命增大时,电池效率随晶粒尺寸的增大显著提高.同时,从模拟结果可得到电池效率与少子寿命和晶粒尺寸之间的定量关系.     

针对少子寿命提升的扩散工艺优化

扩散后的方块电阻以70±21/2/为准,经实验发现去PSG后的硅片少子寿命要比扩散后的硅片少子寿命高,对比通源前通氧(A扩散工艺)和不通氧(B扩散工艺)两种扩散工艺扩散的硅片在去PSG后少寿命的涨幅及对最终制成电池片的转换效率的影响,结果表明,A扩散工艺的硅片比B扩散工艺的硅片在去PSG后的少子寿命增量更大,平均增量可达2.50μs,并且最终制成的电池片效率高出0.08%,短路电流增加0.012A,也更具稳定性。:     

热退火对太阳电池用多晶硅特性的影响

对多晶硅片进行三步退火处理,用傅里叶红外光谱仪(FTIR)和准稳态光电导衰减法(QSSPCD)测硅片退火前后氧碳含量及少子寿命,并对单晶硅片做同样处理进行比较。实验发现:经三步退火后,多晶硅比单晶硅氧碳含量下降的幅度大,这表明多晶硅内部形成的氧沉淀多,其体内的高密度缺陷如晶界、位错等对氧沉淀的形成有促进作用。多晶硅与单晶硅少子寿命大大提高,可能是由于高温退火后晶体内部形成氧沉淀及缺陷的络和物可以作为电活性杂质的吸除中心,从而减少了分散的载流子复合中心,提高了硅片的少子寿命。变化趋势的不同与晶体内部结构有关。     

变温磷吸杂对多晶硅性能的影响

用微波光电导衰减仪(μ-PCD)研究了不同温度和时间的恒温和变温磷吸杂处理对铸造多晶硅片电学性能的影响。实验发现:变温吸杂明显优于恒温吸杂,特别是对原生高质量多晶硅;其优化的变温磷吸杂工艺为1000℃/0.5h 700℃/1.5h;而在高温恒温吸杂中,多晶硅少子寿命值反而显著下降。实验现象表明:磷吸杂效果主要是与过渡族金属的溶解、扩散和分凝有关。     

多孔硅对多晶硅太阳电池中缺陷和杂质的吸除效应

吸杂是减少硅中杂质和缺陷，提高多晶硅太阳电池效率的一种有效手段。本文比较了用三种吸杂方式对多晶硅进行处理的结果和影响：多孔硅吸杂，磷吸杂，多孔硅结合磷吸杂。三种吸杂方式都能明显提高多晶硅的少子寿命。在此基础上研究了多孔硅吸杂的工艺，发现多孔硅吸杂的效果随退火的温度和时间影响比较大，在800℃氮气气氛下退火3h，多晶硅的少子寿命能由原来的1．4μs提高到25．6μs。相比之下，多孔硅吸杂工艺简单，更适合工业生产。     

杂质和缺陷对铸造多晶硅寿命分布的影响

铸造多晶硅的原生少子寿命沿晶锭生长方向呈倒U字型分布,对应于硅锭体内缺陷和主要杂质的规律性分布.硅锭中部Fe浓度低,微缺陷较少,对应的体寿命相对较高.硅锭底部高浓度的O、Fe杂质及高密度微缺陷导致了该区域体寿命偏低;硅锭顶部存在高浓度的C、Fe杂质及大量微缺陷,尤其是高密度位错与铁的相互作用导致该区域体寿命偏低.大量沉淀和结构缺陷并存使得晶锭底部和顶部的材料难以通过吸杂和钝化来改善少子寿命.     

多晶硅电池片双面扩散的仿真研究

结合PC1D模拟软件,对减薄至200μm的多晶硅电池片进行双面扩散与背靠背扩散的对比研究。试验表明:双面扩散工艺和背靠背扩散工艺均具有良好的吸杂效果,少子寿命有很大提高,少子扩散长度已大于电池片厚度。双面扩散比背靠背扩散具有更好的吸杂和钝化效果,少子寿命更长。但PC1D软件仿真及试验结果显示,扩散后电池片的转换效率、短路电流、开路电压等电学性能没有显著改善。     

单晶硅太阳电池发射极的模拟优化

针对传统p型衬底晶硅太阳电池,通过PCID数值计算,模拟了发射极扩散峰值浓度、方块电阻、结深等对电池性能的影响规律以及该规律与硅衬底电阻率之间的依赖关系,分析了其中所蕴含的作用机理.对于磷原子浓度梯度符合余误差分布的发射极,得到扩散制结的标准为:扩散峰值浓度介于1×10~(19)～5×10~(19)cm~(-3)之间,方块电阻在100Ω/□以上.尽管电池效率在衬底电阻率为1Ω·cm时最高,并随衬底电阻率的增大而明显下降,但上述发射极扩散标准基本保持不变.     

光热退火对多晶PERC太阳电池光致衰减效应的影响

针对多晶PERC电池严重的光致衰减问题,研究不同退火方式对多晶PERC太阳电池光诱导衰减效应的影响,通过设计不同退火条件,对退火后的寿命片和电池片光电性能进行系统表征,发现不同退火条件对多晶寿命片和电池片的光衰有较大影响.通过研究对比确定最佳工艺,可较大程度地抑制多晶PERC太阳电池的光衰效应,同时又不影响电池片的转换...     

Si N~+/P/P~+太阳电池的数值模拟与分析

提出了单晶硅N /P/P 太阳电池的物理模型,采用数值模拟方法对其在AM1.5太阳光入射下的电池特性进行了模拟计算,分析了基区少子扩散长度和基区厚度对短路电流密度和转换效率的影响,着重分析了基区少子寿命对转换效率等电池特性的影响.模拟结果表明,在综合考虑了各种损耗机制的前提下,转换效率等电池特性都随基区少子寿命和少子扩散长度的增加而增大,并且从电池输出特性与基区少子寿命的关系曲线上可以方便地获得少子寿命所对应的短路电流密度、开路电压、填充因子和转换效率的值,为实验提供有力的理论依据和参考.     

Minority carrier lifetime in plasma-textured silicon wafers for solar cells

In this work a comparison between plasma-induced defects by two different SF₆ texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 μs for both RIE- and HDP-textured wafers at an excess carrier density of 1×10¹⁵ cm⁻³. The measured lifetimes correspond to an implied one-sun open-circuit voltage of around 680 mV compared to about 640 mV before DRE for the HDP-textured wafers. FZ silicon 1 0 0 wafers were used in this study. We also noted that in the RIE process, the induced defect density was significantly lower for wafers etched at 300 K than those etched at 173 K.     

Application of phosphorus diffusion gettering process on upgraded metallurgical grade Si wafers and solar cells

Although phosphorus (P) diffusion gettering process has been wildly used to improve the performance of Si solar cells in photovoltaic technology, it is a new attempt to apply P diffusion gettering process to upgraded metallurgical grade silicon (UMG-Si) wafers with the purity of 99.999%. In this paper, improvements on the electrical properties of UMG-Si wafers and solar cells were investigated with the application of P diffusion gettering process. To enhance the improvements, the gettering parameters were optimized on the aspects of gettering temperature, gettering duration and POCl₃ flow rate, respectively. As we expected, the electrical properties of both multicrystalline Si (multi-Si) and monocrystalline Si (mono-Si) wafers were significantly improved. The average minority carrier lifetime increased from 0.35 μs to nearly about 2.7 μs for multi-Si wafers and from 4.21 μs to 5.75 μs for mono-Si wafers, respectively. Accordingly, the average conversion efficiency of the UMG-Si solar cells increased from 5.69% to 7.03% for multi-Si solar cells (without surface texturization) and from 13.55% to 14.55% for mono-Si solar cells, respectively. The impurity concentrations of as-grown and P-gettered UMG-Si wafers were determined quantitively so that the mechanism of P diffusion gettering process on UMG-Si wafers and solar cells could be further understood. The results show that application of P diffusion gettering process has a great potential to improve the electrical properties of UMG-Si wafers and thus the conversion efficiencies of UMG-Si solar cells.     

Amorphous silicon solar cell on textured tempered glass substrate prepared by sandblast process

The surface morphology and the optical property of sandblasted glasses and the photovoltaic property of amorphous-silicon solar cells fabricated on them were investigated. The results suggest that the cell performance is related to the surface micro roughness of glass substrate, especially the short period undulation and the surface fractal dimension. Consequently, the amorphous-silicon solar cell on the tempered glass substrate which had the short-circuit current of 14.26 mA/cm² and the efficiency of 8.00% was obtained.     

Recent progress of amorphous silicon solar cell applications and systems

Fifteen years have passed since the first industrial use of amorphous silicon (a-Si) solar cells for consumer products. At present, a-Si solar cells are entering a new age of use in power generating systems at private residences and other outdoor applications. This paper reviews recent advances in amorphous silicon (a-Si) solar cells and their applications. Technological developments in the field of a-Si solar cells are discussed. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are discussed, including a new concept of GENESIS system for worldwide energy generation and transmission.     

Comparison of minority carrier diffusion length measurements in silicon solar cells by the photo-induced open-circuit voltage decay (OCVD) with different excitation sources

The photoinduced open-circuit voltage decay technique was used to investigate the minority carrier lifetime in crystalline and polycrystalline silicon solar cells. This convenient investigation technique allows a fast determination of the diffusion length of minority carriers in semiconductor materials and is an important technique to predict the solar cell performance. The decay curves were obtained with different excitation sources, a xenon stroboscope lamp and a Nd:YAG laser, and the results were compared.     

Numerical analysis of bulk diffusion length in thin-film c-Si solar cells

We propose a novel technique of determining relationship between effective and bulk diffusion length of single-crystalline Si (c-Si) thin-film solar cells using two-dimensional device simulator. In addition, bulk diffusion length was obtained using the result of the simulation. Effective diffusion length was measured by LBIC method in order to presume bulk diffusion length of c-Si thin film. We obtained 6.7 μm for effective diffusion length of c-Si thin-film solar cell whose thickness was about 7 μm. We compared the result of measurement and simulation, bulk diffusion length of c-Si thin film prepared by CVD method was estimated more than 30 μm and recombination velocity was presumed <10⁴ cm/s for front surface and 10³ cm/s for rear surface of the cell.     

硅纳米线阵列太阳电池的性能分析

采用金属催化腐蚀法分别在(100)和(111)硅片表面制备出大面积垂直排列和倾斜排列的单晶硅纳米线阵列,垂直阵列在300～1000nm波段的平均反射率约为2.5%,倾斜阵列在该波段的平均反射率约为5%。基于垂直阵列和倾斜阵列制作的硅纳米线阵列太阳电池的最高转换效率分别为9.31%和11.37%。倾斜阵列电池的串联电阻比垂直阵列电池有所减小,使电池填充因子增大,性能有所提升。载流子复合是硅纳米线阵列太阳电池中电学损失的主导,使电池性能明显低于常规单晶硅电池。     

用开路电压法测硅太阳电池中少数载流子寿命

太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。该文分别介绍了利用纳秒激光器和发光二极管(LED)作为OCVD的光源，测量晶体硅太阳电池的少子寿命，结果发现可以利用脉冲信号发生器带动发光二极管作为脉冲光源，取代纳秒激光器，来测量单晶硅和多晶硅太阳电池的少子寿命。     

R & D activities of crystalline silicon solar cells in Japan

Research and development of crystalline silicon solar cells in Japan have greatly advanced for the past 10 years. Fundamental research has been conducted on the recombination and passivation of minority carriers at Si/SiO₂ interfaces and in bulk regions including grain boundaries. Qualities of Si feedstock and substrates have been improved. A small-area cell efficiency using monocrystalline silicon substrates has reached 21 % and that for large-area, multicrystalline solar cells up to 17% by using low-cost cell fabrication processes. Such high efficiency values are realized by tenacious improvement of substrate quality and the development of new processes for fabricating solar cells.