考虑增益饱和及寄生参数的LD的模拟分析

基于包含增益饱和项的半导体激光器速率方程,分析了增益饱和因子和寄生参数对DFB激光器的动态特性的影响.建立了激光器用于数值计算的Simulink模型,对激光器的调制响应进行了数值分析;结合电子电路的特点,建立了一种考虑寄生参量的小信号等效电路模型,该模型将速率方程表征为由线性电路元件组成的电路模型;采用Matlab和PSpice两种软件模拟了该激光器的调制响应.结果表明张弛振荡频率和调制带宽随偏置电流的增加而增加,而增益饱和因子和寄生参数的存在使谐振频率衰减和带宽降低,同时也证明了所建模型的准确性和适用性.为改善DFB激光器的动态特性及优化设计器件结构参数提供了理论依据.     

电吸收调制器和DFB激光器集成器件的测量

提出了一种测量电吸收调制器和激光器集成器件芯片散射参数的新方法.根据电吸收调制器和封装寄生参数的等效电路模型,对测量的反射系数进行拟合,得到封装寄生参数和电吸收调制器的等效电路元件的参数值.通过分析发现测试封装寄生参数对电吸收调制器的测试结果有很大影响.去除了封装寄生参数的影响后,得到了调制器的反射和传输参数的真实频响特性.     

电吸收调制器和DFB激光器集成器件的测量

提出了一种测量电吸收调制器和激光器集成器件芯片散射参数的新方法.根据电吸收调制器和封装寄生参数的等效电路模型,对测量的反射系数进行拟合,得到封装寄生参数和电吸收调制器的等效电路元件的参数值.通过分析发现测试封装寄生参数对电吸收调制器的测试结果有很大影响.去除了封装寄生参数的影响后,得到了调制器的反射和传输参数的真实频响特性     

基于扣除法的半导体激光器高频响应仿真新方法

基于激光器速率方程和等效电路模型对激光器高频响应特性进行分析，提出了一种采用激光器频率响应扣除法提取有源区本征响应和预测激光器整体频率响应的仿真新方法．用该方法对实验样品的高频调制响应进行了仿真，仿真结果与实际测量数据相吻合．     

一种适用于毫米波的InP HBT小信号模型与参数提取方法

为了精确提取磷化铟异质结双极型晶体管(InP HBT)在毫米波频段的寄生参数和本征参数,研究了器件的物理结构,从物理上区分了通孔和电极的寄生元件,建立了一个适用于毫米波频段的具有详细寄生网络的分布式InP HBT小信号模型,同时提出了一种直接的参数提取方法且不使用任何数值优化.结果显示,若忽略寄生参数的影响,本征参数提...     

基于扣除法的半导体激光器高频响应仿真新方法

基于激光器速率方程和等效电路模型对激光器高频响应特性进行分析,提出了一种采用激光器频率响应扣除法提取有源区本征响应和预测激光器整体频率响应的仿真新方法.用该方法对实验样品的高频调制响应进行了仿真,仿真结果与实际测量数据相吻合.     

内腔接触氧化限制型垂直腔面发射激光器小信号调制特性研究

建立了一种适用于多量子阱垂直腔面发射激光器(VCSEL)的多层速率方程模型.在理论与实验基础上,对器件进行小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对VCSEL频率响应特性的影响.结果表明VCSEL调制带宽会随着输出功率增大而变宽.并进一步研究了内腔接触氧化限制型VCSEL的寄生电参数及其寄生电路,对其小信号频率响应进行了模拟分析.     

肖特基二极管毫米波等效电路模型参数提取方法

提出了一种肖特基二极管的毫米波等效电路模型参数提取方法。该方法利用开路测试结构确定焊盘电容,并结合短路测试结构确定馈线电感;基于直流I-V特性曲线和小信号S参数分别提取了寄生电阻并进行了对比分析;给出了本征元件随偏置电压的变化曲线。在频率高达40 GHz的范围内,截止和导通状态下S参数的模拟与测试数据吻合良好,验证了提取方法的有效性。     

激光器

Y99-61822-153 2001944各式激光器(含5篇文章)=TuC:lasers[会,英]//In-ternational Topical Meeting on Microwave Photonics.—153～172(UC)本部分收录论文5篇。其论文题目有:模拟光学线路用的先进的微波光子器件,具有正本征增益和低噪声指数的宽带定向调制的模拟型光纤线路,宽带光-微波用的具有增强量子效率和本征射频匹配的新型集成激光器件,30KHz 到6GHz 有均匀频率调制响应的两面集成式量子制约 Stark 效应词谐激光器等。2001945智利的工业激光器[刊]/帅文//光电子技术与信息.—1999,12(5).—42～43(E)     

手征介质圆波导中阶梯不连续性的散射和辐射特性研究

采用多模网络与严格模匹配相结合的方法，对开放型手征介质圆波导中的二种阶梯不连续性的散射和辐射特性进行分析和求解，仔细讨论了手征参数和几何尺寸对散射和辐射特性的影响．给出的结果对手征介质元器件的研究有实际的参考意义．     

Characterization of Parasitics in TO-Packaged High-Speed Laser Modules

An elaborate analysis of the parasitic network of high-speed through-hole packaging (TO)-type laser modules is presented using a small-signal equivalent circuit model. The intrinsic laser diode is obtained using the optical modulation technique, and is embedded into the model as a separate component. Three step-by-step measurements are made for determining the packaging parasitic network, including the test fixture, TO header, submount, bonding wire, and parasitics of the laser chip. A good agreement between simulated and measured results confirms the validation and accuracy of the characterization procedures. Furthermore, several key parasitic elements are found based on the simulation of the high-frequency responses of the packaged devices. It is expected that the 3-dB bandwidth of 12 GHz or more of the low-cost TO packaged laser module may be achieved using the proposed optimization method     

Extraction of intrinsic response from S-parameters of laser diodes

We describe a new method for extracting the intrinsic response of a laser diode from S-parameters measured using a calibrated vector network analyzer. The experimental results obtained using the new method are compared with those obtained using the optical modulation method and the frequency response subtraction method. Good agreement has been obtained, confirming the new method validity and accuracy. The new method has the advantages of obtaining the intrinsic characteristics of a laser diode with conventional measurements using a network analyzer.     

The application of flip-chip bonding interconnection technique on the module assembly of 10 Gbps laser diode

Flip chip bonding technique using Pb/In solder bumps was applied to packaging of a 10 Gbps laser diode (LD) submodule for high speed optical communication systems. The effect of the flip-chip bonding interconnection technique instead of conventional wire bonding was investigated for high speed broad band devices. The broad band performance of 10 Gbps LD submodule was simulated using SPICE S/W and compared with experimental results. In this simulation, the 10 Gbps LD was modeled in a parallel RC circuit. The values of R and C used for the equivalent circuit were 5ω and 1 pF, respectively. The LD was placed in series with a 18ω thin film resistor to prevent the impedance mismatch between the LD and a 25ω transmission line. The dependence of parasitic parameters on the small signal modulation bandwidth and the scattering parameters of the LD submodule was investigated and analyzed up to 20 GHz. A small signal modulation bandwidth of 14 GHz at 10 mA dc bias current and the clean modulation response up to 20 GHz were found for the flip-chip bonded submodule. The bandwidth of flip-chip bonded 10 Gbps LD submodule is wider than that of the wire-bonded LD submodule by a difference of 3.8 GHz.     

0.6μm CMOS感性负载自偏置直接耦合激光驱动器

设计了一种可以工作在多个速率级的光纤通信系统用激光二极管驱动电路。电路采用了有源电感负载技术、键合线寄生电感负载技术、自偏置技术和放大级直接耦合技术以提高增益、拓展带宽、降低功耗。电路采用CSMC-HJ0.6 μm CMOS技术设计、采用Smart Spice进行电路性能仿真优化。激光驱动器电路的增益可达52dB,带宽可达到525MHZ,输出调制电流在0-65mA范围内可调。电路采用5V单电源供电,功耗380mW。模拟结果显示该电路可以工作在STM-1、STM-4两个标准速率级和更高的速率上。     

Correction technique for on-chip modulation response measurementsof optoelectronic devices

A new and accurate error correction technique for on-chip intensity modulation response measurements of high-frequency optoelectronic devices is presented. Mathematical expressions for the different sources of errors that exist in the measurement system are derived. The new correction technique applied to the modulation response measurement of a strained quantum well laser diode shows excellent agreement with the theoretically expected result. Simulation results for a small-signal circuit model of the laser diode show excellent agreement with the measured input reflection coefficient S₁₁ and the modulation response S₂₁. With the corrected modulation response measurement, more accurate parameters for this model are extracted     

Influence of electrical parasitics and drive impedance on the laser modulation response

In this letter, we analyze the effects of electrical parasitics and drive impedance on the laser modulation response. It is found that for lasers with small active-region volume, e.g., vertical-cavity surface-emitting lasers, the finite drive impedance and/or the laser parasitic capacitance can significantly enhance the damping of the laser resonance peak at low bias. This is due to the voltage fluctuations across the laser diode active layer during modulation. It is also shown that the real pole of the small-signal response transfer function corresponding to the laser parasitic cutoff frequency is not fixed but decreases with the increased bias level.     

Improved high-frequency response of InGaAsP double-channel buried-heterostructure lasers

Several modifications of the InGaAsP double-channel buried-heterostructure laser diode are described with reduced parasitic capacitances in order to improve the modulation speed of the laser chip. The parasitic capacitances of the various devices are measured and the data are described in terms of an improved microwave circuit model for BH lasers. A modulation bandwidth of more than 3 GHz is experimentally obtained by means of proton isolation of the laser chip outside the active region.     

Noise equivalent circuit of a semiconductor laser diode

The noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise and modulation characteristics of a laser diode combined with electronic components. The intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven laser diode are calculated as a function of bias current and frequency.     

基于等效电路模型的半导体激光器直流偏置分析

从传统的激光器速率方程出发,同时考虑芯片封装寄生参量和本征区接触参量的影响,得出一种双异质结半导体激光器的新型等效电路模型,在此模型基础上用电路仿真软件PSpice分析了直流偏置对激光器弛豫振荡、小信号频率响应、大信号脉冲响应的影响。