Effect of Sintering Temperature on the Microstructural and Flux Pinning Characteristics of Bi1.6Pb0.5Sr1.8La0.2Ca1.1Cu2.1O8+δ Ceramics

We evaluated the microstructure, superconducting, and flux pinning properties of La-doped (Bi,Pb)-2212 bulk sample by varying its sintering temperature ( T _sinter) between 846° and 860°C. Significant variations in microstructure, self- and in-field J _Cs at 64 K and flux pinning properties have been observed for La-substituted samples with respect to T _sinter. The sample sintered at 858°C shows best self-field J _C while that sintered at 846°C shows the best in-field J _C due to the changes in microstructure. The activation energy of flux motion (pinning potential U _o) is estimated from the field dependent resistivity–temperature curves, and the flux pinning force ( F _P) from the field-dependent J _C values. It is found that the La-doped samples, sintered at 846°C show maximum F _P and U _o of 463 kN/m³ and 0.380±0.001 eV as against 93.6 k/Nm³ and 0.140±0.001 eV, respectively, for the sample sintered at 858°C. The undoped (Bi,Pb)-2212 shows a maximum F _P and U _o of 12.7 k/Nm³ and 0.074±0.001 eV, respectively. The origin of these enhanced properties is mainly from the normal-like defects introduced by optimum La-doping at the Sr-site, at an optimum sintering temperature.     

Alignment of YBa2Cu3O7-x and Ag─YBa2Cu3O7-x Composites at ∼930°C by Eutectic Formation

The present work describes a new technique to synthesize aligned YBa₂Cu₃O_{7- x} and Ag─YBa₂Cu₃O_{7- x} superconducting composites from Ba- and Cu-deficient compositions (relative to YBa₂Cu₃O_{7- x} ) plus BaCuO₂. For YBa₂Cu₃O_{7- x} , high transition temperature midpoint T_c (91 K), temperature of zero resistivity T ₀ (90 K), and critical current density J_c (>3000 A°Cm⁻² at 77 K) were achieved by using this technique. This procedure provides the potential for using a reliable and reproducible densification and alignment technique alternative to partial or full melting. The composite is highly aligned, with an average grain size of ∼1 to 2 mm and domains of width greater than 5 mm. The initial phase assemblage consists of YBa₂Cu₃O_{7- x} (123) as the major phase plus YBa₂CuO₅ (211) CuO as minor phases. The BaCuO₂ is added to the Ba- and Cu-deficient starting composition in order to assist in the formation of a CuO-rich liquid as well as to compensate for the Ba and Cu deficiences in 123. Since the liquid forms at ∼900°C and is compatible with 123, it can be used to facilitate alignment of 123 at ∼930°C. The addition of Ag to the system results in eutectic formation with the (solidified) liquid, substantial filling of the pores during sintering, and improved alignment.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Microstructure and Nonlinear Properties of Microwave-Sintered ZnO-V2O5 Varistors: I, Effect of V2O5 Doping

The modification of the densification behavior and the grain-growth characteristics of the microwave-sintered ZnO materials, caused by the incorporation of V₂O₅ additives, have been systematically studied. Generally, the addition of V₂O₅ markedly enhances the densification rate, such that a density as high as 97.9% of the theoretical density and a grain size as large as 10 µm can be attained for a sintering temperature as low as 800°C and a soaking time as short as 10 min. Increasing the sintering temperature or soaking time does not significantly change the sintered density of the ZnO-V₂O₅ materials but it does monotonously increase their grain size. Varying the proportion of V₂O₅ in the range of 0.2-1.0 mol% does not pronouncedly modify such behavior. The leakage current density ( J _L) of these high-density and uniform-granular-structure samples is still large, which is amended by the incorporation of 0.3 mol% of Mn₃O₄ in the ZnO materials, in addition to 0.5 mol% of the V₂O₅ additives. Samples that are obtained using such a method possess good nonohmic characteristics (α= 23.5) and a low leakage current density ( J _L= 2.4 10^-6 A/cm²).     

Superconductive Properties of the YBa2Cu4O8 Superconductor

A bulk density of 85% of the theoretical density was achieved by sintering a powder compact of YBa₂Cu₄O₈ (124) at 850°C in flowing oxygen at 1 atm (≅10⁵ Pa). This value is very close to that obtained by the hot isostatic pressure technique (90%). The superconducting properties of the sample were characterized by magnetization and ac susceptibility techniques. The magnetization critical current density at 20 K in zero field was determined to be ∼5 × 10⁴ A/cm², and the superconducting transition temperatures were found to be 77 K for the bulk material and 82 K for the granular phase. The powder X-ray diffraction and ac susceptibility studies revealed the sintered 124 material to be single phase.     

Processing Effects on Microstructure and Superconducting Properties of Sintered YBa2Cu3O6+x

The relationships between the microstructure of sintered YBa₂Cu₃O_{6+ x} superconductors and processing variables (sintering time, sintering temperature, and oxygen partial pressure) were examined. Large-grained microstructures were obtained in 100 kPa oxygen sintering atmospheres, while fine-grained microstructures were obtained in 2 kPa oxygen. The formation of liquid phases below the peritectic decomposition temperature of YBa₂Cu₃O_{6+ x} was found to have an effect on both the microstructure (as observed by optical and transmission electron microscopy) and the transport critical current density ( J_c ). The critical current density was found to be highest for sintering below the lowest invariant point, which is a function of the oxygen partial pressure. However, over the range of conditions examined here, there does not appear to be any correlation between microstructural features, such as average grain size and aspect ratio, and the transport J_c .     

Effect of Sintering Aids on Microstructures and PTCR Characteristics of (Sr0.2Ba0.8)TiO3 Ceramics

The effects of liquid-phase sintering aids on the microstructures and PTCR characteristics of (Sr_0.2Ba_0.8)TiO₃ materials have been studied. The grain size of sintered materials monotonically decreases with increasing content of Al₂O₃–SiO₂–TiO₂ (AST). The ultimate PTCR properties with ρ_ht/ρ_rt as great as 10^5.61 are obtained for fine-grain (10-μm) samples, which contain 12.5 mol% AST and were sintered at 1350°C for 1.5 h. The quantity of liquid phase formed due to eutectic reaction between AST and (Sr,Ba)TiO₃ is presumably the prime factor in determining the grain size of samples. The grains grow rapidly at the sintering temperature in the first stage until the liquid phase residing at the grain boundaries reaches certain critical thickness such that the liquid–solid interfacial energy dominates the mechanism of grain growth.     

Preparation of Dense BaTiO3 Ceramics with Submicrometer Grains by Spark Plasma Sintering

Dense BaTiO₃ ceramics consisting of submicrometer grains were prepared using the spark plasma sintering (SPS) method. Hydrothermally prepared BaTiO₃ (0.1 and 0.5 µm) was used as starting powders. The powders were densified to more than similar/congruent95% of the theoretical X-ray density by the SPS process. The average grain size of the SPS pellets was less than similar/congruent1 µm, even by sintering at 1000-1200°C, because of the short sintering period (5 min). Cubic-phase BaTiO₃ coexisted with tetragonal BaTiO₃ at room temperature in the SPS pellets, even when well-defined tetragonal-phase BaTiO₃ powder was sintered at 1100° and 1200°C and annealed at 1000°C, signifying that the SPS process is effective for stabilizing metastable cubic phase. The measured permittivity was similar/congruent7000 at 1 kHz at room temperature for samples sintered at 1100°C and showed almost no dependence on frequency within similar/congruent10⁰-10⁶ Hz; the permittivity at 1 MHz was 95% of that at 1 kHz.     

Double Precursor Solution Coating Approach for Low-Temperature Sintering of [Pb(Mg1/3Nb2/3)O3]0.63[PbTiO3]0.37 Solids

Lead-based piezoelectric ceramics typically require sintering temperatures higher than 1000°C at which significant lead loss can occur. Here, we report a double precursor solution coating (PSC) method for fabricating low-temperature sinterable polycrystalline [Pb(Mg_1/3Nb_2/3)O₃]_0.63-[PbTiO₃]_0.37 (PMN–PT) ceramics. In this method, submicrometer crystalline PMN powder was first obtained by dispersing Mg(OH)₂-coated Nb₂O₅ particles in a lead acetate/ethylene glycol solution (first PSC), followed by calcination at 800°C. The crystalline PMN powder was subsequently suspended in a PT precursor solution containing lead acetate and titanium isopropoxide in ethylene glycol to form the PMN–PT precursor powder (second PSC) that could be sintered at a temperature as low as 900°C. The resultant d ₃₃ for samples sintered at 900°, 1000°, and 1100°C for 2 h were 600, 620, and 700 pm/V, respectively, comparable with the known value. We attributed the low sintering temperature to the reactive sintering nature of the present PMN–PT precursor powder. The reaction between the nanosize PT and the submicrometer-size PMN occurred roughly in the same temperature range as the densification, 850°–900°C, thereby significantly accelerating the sintering process. The present PSC technique is very general and should be readily applicable to other multicomponent systems.     

Preparation and Sintering Behavior of Fine-Grained A12O3-SiO2 Composite

A fine, uniform A1₂O₃-SiO₂ powder was prepared by heterocoagulation of narrow Al₂O₃ and SiO₂ powders. This composite powder was dispersed, compacted, and fired in air at 900° to 1580°C for 1 to 13 h. Full density was achieved at 1550°C with the formation of a mullite phase. Relative densities of 83% and 98% (0.3 μm grain size) were measured for samples sintered at 1200°C for 13 h and at 1400°C for 1 h, respectively.     

Sintering and Properties of Monazite-Type CePO4

Monazite-type CePO₄ powder (average grain size 0.3 μm) was dry-pressed to disks or bars. The green compacts began to sinter above 950°C. Relative density ≧ 99% and apparent porosity <1% were achieved when the specimens were sintered at 1500°C for 1 h in air. The linear thermal expansion coefficient and thermal conductivity of the CePO₄ ceramics were 9 × 10⁻⁶/°C to 11 × 10⁻⁶/°C (200° to 1300°C) and 1.81 W/(m · K) (500°C), respectively. Bending strength of the ceramics (average grain size 4 μm) was 174 ± 28 MPa (room temperature). The CePO₄ ceramics were cracked or decomposed by acidic or alkaline aqueous solutions at high temperatures.     

Retrograde Densification in Bi2Sr2CaCu2O8 Superconductors

Bi₂Sr₂CaCu₂O₈ was prepared using the mixed oxide-carbonate method and sintered at temperatures ranging from 850° to 911°C. The samples were characterized for density, mechanical strength, phase composition, microstructure, and superconducting transition temperatures. A unique retrograde densification characteristic is demonstrated in the temperature range 850° to 890°C whereby the material first becomes less dense as the sintering temperature is raised, and only in a narrow temperature range from 900° to 905°C does the material densify then with the formation of a liquid phase. The retrograde densification mechanism is shown to be that of the formation of thin platelike crystallites which grow in a randomly oriented fashion, thus pushing the structure apart. This retrograde densification, coupled with a narrow sintering range overlapping the melting temperature, makes this compound a difficult one to process.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.     

Low-Temperature Sintering and Piezoelectric Properties of CuO-Added 0.95(Na0.5K0.5)NbO3–0.05BaTiO3 Ceramics

The sintering temperature of 0.95(Na_0.5K_0.5)NbO₃–0.05BaTiO₃ (NKN–BT) ceramics needs to be decreased below 1000°C to prevent Na₂O evaporation, which can cause difficulties in poling and may eventually degrade their piezoelectric properties. NKN–BT ceramics containing CuO were well sintered at 950°C with grain growth. Poling was easy for all specimens. Densification and grain growth were explained by the formation of a liquid phase. The addition of CuO improved the piezoelectric properties by increasing the grain size and density. High piezoelectric properties of d ₃₃=230 pC/N, k _p=37%, and ɛ₃^T/ɛ₀=1150 were obtained from the specimen containing 1.0 mol% of CuO synthesized by the conventional solid-state method.     

Electrical Conduction in Nano-Structured La0.9Sr0.1Al0.85Co0.05Mg0.1O3 Perovskite Oxide

Nanocrystalline La_0.9Sr_0.1Al_0.85Co_0.05Mg_0.1O₃ oxide powder was synthesized by a citrate–nitrate auto-ignition process and characterized by thermal analysis, X-ray diffraction, and impedance spectroscopy measurements. Nanocrystalline (50–100 nm) powder with perovskite structure could be produced at 900°C by this process. The powder could be sintered to a density more than 96% of the theoretical density at 1550°C. Impedance measurements on the sintered samples unequivocally established the potential of this process in developing nanostructured lanthanum aluminate-based oxides. The sintered La_0.9Sr_0.1Al_0.85Co_0.05Mg_0.1O₃ sample exhibited a conductivity of 2.40 × 10⁻² S/cm in air at 1000°C compared with 4.9 × 10⁻³ S/cm exhibited by La_0.9Sr_0.1Al_0.85Mg_0.15O₃.     

Pressureless Sintering of Dense Si3N4 and Si3N4/SiC Composites with Nitrate Additives

The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si₃N₄ and a Si₃N₄/SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si₃N₄ particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si₃N₄ particles milled with oxide additives. Monolithic Si₃N₄ could be sintered to 94% of theoretical density (TD) at 1500°C with nitrate additives. The sintering temperature was about 100°C lower than the case with oxide additives. After pressureless sintering at 1750°C for 2 h in N₂, the bulk density of a Si₃N₄/20 wt% SiC composite reached 95% TD with nitrate additives.     

Superconducting Coupling Nature at Grain Boundaries in Bi2Sr2CaCu2Ox Glass-Ceramics

Superconducting coupling nature at grain boundaries in Bi₂Sr₂CaCu₂O _x glass-ceramics consisting mainly of the low- T _c phase was first examined by measuring superconducting properties and temperature or ac field dependence of ac complex susceptibility. It was found from the ac loss peaks that superconducting coupling at grain boundaries was basically characterized by three types of weak links. The weak-link behaviors at grain boundaries depended strongly on cooling conditions after annealing and annealing time and temperature. Particularly, it was found that the weak links at grain boundaries were improved by prolonged annealing at 840°C. The furnace-cooled glass-ceramics obtained by annealing at 820° or 840°C for about 200 h exhibited a critical transport current density (77 K, zero magnetic field) of about 200 A/cm².     

Effect of Glass Additions on BaO–TiO2–WO3 Microwave Ceramics

The effect of glass addition on the properties of BaO–TiO₂-WO₃ microwave dielectric material N-35, which has Q = 5900 and K = 35 at 7.2 GHz for samples sintered at 1360°C, was investigated. Several glasses including B₂O₃, SiO₂, 5ZnO–2B₂O₃, and nine other commercial glasses were selected for this study. Among these glasses, one with a 5 wt% addition of B₂O₃ to N-35, when sintered at 1200°C, had the best dielectric properties: Q = 8300 and K = 34 at 8.5 GHz. Both Q and K increased with firing temperature as well as with density. The Q of N-35, when sintered with a ZnO–B₂O₃ glass system, showed a sudden drop in the sintering temperature to about 1000°C. The results of XRD, thermal analysis, and scanning electron microscopy indicated that the chemical reaction between the dielectric ceramics and glass had a greater effect on Q than on the density. The effects of the glass content and the mixing process on the densification and microwave dielectric properties are also presented. Ball milling improved the densification and dielectric properties of the N-35 sintered with ZnO–B₂O₃.     

Low-Temperature Sintering of K0.5Na0.5NbO3 Ceramics

The objective of this work was to lower the sintering temperature of K_0.5Na_0.5NbO₃ (KNN) without reducing its piezoelectric properties. The KNN was sintered using 0.5, 1, 2, and 4 mass% of (K, Na)-germanate. The influence of the novel sintering aid, based on alkaline germanate with a melting point near 700°C, on the sintering, density, and piezoelectric properties of KNN is presented. The alkaline-germanate-modified KNN ceramics reach up to 96% of theoretical density at sintering temperatures as low as 1000°C, which is approximately 100°C less than the sintering temperature of pure KNN. The relative dielectric permittivity (ɛ/ɛ₀) and losses (tanδ), measured at 10 kHz, the piezo d ₃₃ coefficient, the electromechanical coupling and mechanical quality factors ( k _p, k _t, Q _m) of KNN modified with 1 mass% of alkaline germanate are 397, 0.02, 120 pC/N, 0.40, 0.44, and 77, respectively. These values are comparable to the best values obtained for KNN ceramics sintered above 1100°C.     

Effect of Grain Size on the Thermal Conductivity of Si3N4

Polycrystalline Si₃N₄ samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si₃N₄ resulted in the formation of a large amount of ß-Si₃N₄ grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si₃N₄ materials were 80 and 102 Wm⁻¹K⁻¹, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm⁻¹K⁻¹). The calculated phonon mean free path of sintered Si₃N₄ was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si₃N₄ at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.