Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain

In this paper, a Schottky barrier polycrystalline silicon thin-film transistor (SB TFT) with erbium silicide source/drain is demonstrated using low temperature processes. A low temperature oxide is used for a gate dielectric and the transistor channel is crystallized by a metal-induced lateral crystallization process. An n-type SB TFT shows a normal electrical performance with subthreshold slope of 239 mV/dec, I_ON/I_OFF ratio of 5.8 × 10⁴ and I_ON of 2 μA/µm at V_G = 3 V, V_D = 2.5 V for 0.1 μm device. A process temperature is maintained at less than 600 °C throughout the whole processes. The SB TFT is expected to be a promising candidate for a next system-on-glass technology and an alternative 3D integration technology.     

Silicon metal-semiconductor-metal photodetector with zinc oxide transparent conducting electrodes

Transparent conducting oxides thin layers, due to their optical and electrical properties, can be used as transparent electrodes in various optoelectronic devices. We present a metal-semiconductor-metal photodiode (MSM-PD) on silicon as optically active layer with zinc oxide (ZnO) thin layer as interdigitated Schottky transparent electrodes. The advantage of using a ZnO thin layer as Schottky electrodes consists in the improvement of the photoresponse by eliminating the shadowing of the active area by opaque metallic electrodes. ZnO thin layers were deposited on 10 Ω cm resistivity silicon epitaxial wafers by the vacuum thermal evaporation method. High purity metallic powders were mixed with an (Al + Sn)/Zn ratio of 0.03. In order to obtain transparent layers the metallic depositions were thermally treated at 450 °C for 2 h. The Al, Sn co-doped ZnO layers of 0.5-0.8 μm were investigated regarding structural, optical and electrical properties and surface morphology. The obtained thin layers have a high transparency (T > 85%) over a large spectral range and the resistivity is quite low, ρ ~ 10^− 4 Ω cm. The interdigitated Schottky contacts of ZnO were configurated onto the optically active Si layer providing an MSM-PD structure of 0.143 mm² active area and finger spacing and finger width of 6 μm. The optoelectronic characteristics were measured and the Schottky barrier height of 0.62 eV was determined from the current-voltage characteristic. A responsivity of 0.2 A/W at 475 nm and a capacitance of 1.4 pF at 10 V bias were obtained for the MSM-PD structure with transparent conducting ZnO Schottky electrodes.     

Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ?nterlayer

In this work, we present that Rhodamine-101 (Rh-101) organic molecules can control the electrical characteristics of conventional Au/n-InP metal-semiconductor contacts. An Au/n-InP Schottky junction with Rh-101 interlayer has been formed by using a simple cast process. A potential barrier height as high as 0.88 eV has been achieved for Au/Rh-101/n-InP Schottky diodes, which have good current-voltage (I-V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Au and n-InP. By using capacitance-voltage measurement of the Au/Rh-101/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.78 V and 0.88 eV, respectively. From the I-V measurement of the diode under illumination, short circuit current and open circuit voltage have been extracted as 1.70 μA and 240 mV, respectively.     

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Current-voltage (IV) and capacitance-voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at −1.5 V. An average barrier height of (0.77 ± 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 ± 0.03) eV after annealing at 550 °C. The reverse current has been measured as (2.10 ± 0.01) × 10⁻¹⁰ A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 °C to (1.56 ± 0.01) × 10⁻⁵ A. The depletion layer width measured at −2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 μm after annealing at 200 °C to 0.24 μm after annealing at 500 °C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 × 10¹⁵ cm⁻³ at 200 °C to 6.06 × 10¹⁶ cm⁻³ after annealing at 550 °C. This increase in the volume concentration has been explained as an effect of a conductive channel that shifts closer to the surface after sample annealing. The series resistance has been observed to decrease with increase in annealing temperature. The Pd contacts have shown high stability up to an annealing temperature of 250 °C as revealed by the IV and CV characteristics after which the quality of the contacts deteriorates with increase in annealing temperature.     

Characteristics of Schottky barrier silicon nanocluster floating gate flash memory

The silicon nanocluster floating gate memory device based on the Schottky barrier metal-oxide-semiconductor field effect transistor (SB-MOSFET) was proposed. The silicon nanoclusters were formed via the digital gas-feeding low pressure chemical vapor deposition. Erbium silicide process was used to form the Schottky junctions at the source/drain. In addition to the SB-MOSFET operation, the program/erase times of the nonvolatile memory device were determined to be 10 ms and 100 ms under the + 18 and − 18 V gate bias conditions, respectively. Maximum memory window was 5.5 V and the charge retention characteristics were maintained with a memory window of 0.5 V at 10⁶ s.     

Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell

The electrical and photovoltaic properties of the Au/n-GaAs Schottky barrier diode have been investigated. From the current-voltage characteristics, the electrical parameters such as, ideality factor and barrier height of the Au/n-GaAs diode were obtained to be 1.95 and 0.86 eV, respectively. The interface state distribution profile of the diode as a function of the bias voltage was extracted from the capacitance-voltage measurements. The interface state density D_it of the diode was found to vary from 3.0 × 10¹¹ eV⁻¹ cm⁻² at 0 V to 4.26 × 10¹⁰ eV⁻¹cm⁻² at 0.5 V. The diode shows a non-ideal current-voltage behavior with the ideality factor higher than unity due to the interfacial insulator layer and interface states. The diode under light illumination exhibits a good photovoltaic behavior. This behavior was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current density were obtained to be 362 mV and J_sc = 28.3 μA/cm² under AM1, respectively.     

Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications

Simple hybrid p-n homo-junctions using p-type ZnO thin films and n-type nanorods grown on fluorine tin oxide (FTO) substrates for photovoltaic applications are described. The ZnO nanorods (1.5 μm) were synthesized via an aqueous solution method with zinc nitrate hexahydrate and hexamethylenetetramine on ZnO seed layers. The 10-nm-thick ZnO seed layers showed n-type conductivity on FTO substrates and were deposited with a sputtering-based method. After synthesizing ZnO nanorods, aluminum-nitride co-doped p-type ZnO films (200 nm) were efficiently grown using pre-activated nitrogen (N) plasma sources with an inductively-coupled dual-target co-sputtering system. The structural and electrical properties of hybrid p-n homo-junctions were investigated by scanning electron microscopy, transmittance spectrophotometry, and I-V measurements.     

Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes

We investigated the effect of the deposition rate of Au source/drain electrodes on the contact resistance of the top-contact organic thin-film transistors (OTFTs). For the formation of source/drain contacts, Au was thermally deposited at the different rates of 0.5, 1.0, 5.0, and 13.0 Å/s. With increasing the Au deposition rate, the contact resistance extracted at the gate voltage of − 30 V could be reduced from 14 × 10⁶ to 2.4 × 10⁶ Ω, resulting in the characteristic improvements of the top-contact OTFT. It is also found that the contact resistance significantly affects the off-state currents of the device having the short channel length of 10 μm. The control of the deposition rate of source/drain electrodes is suggested to optimize the contact properties of the top-contact OTFTs as well as the device performance.     

Effect of thickness of ZnO active layer on ZnO-TFT's characteristics

We have investigated the electrical characteristics of ZnO thin film transistors with respect to the thickness of ZnO active layers. The ZnO layers with the thickness of 30 nm to 150 nm were deposited on bottom gate patterned Si substrate by RF sputtering at room temperature. The low-temperature oxide served as gate dielectric. As ZnO channel layer got thicker, the leakage current at V_DS = 30 V and V_G = 0 V greatly increased from 10^− 10 A to 10^− 6 A, while the threshold voltage decreased from 15 V to 10 V. On the other hand, the field effect mobility got around 0.15 cm²/V s except for the 30-nm-thick channel. Overall, the 55-nm-thick ZnO channel layer showed the best performance.     

Toward a carbon nanotube anode gas-filled radiation detector

A prototype gas-filled proportional counter (PC) based on micro-scale tungsten wire and carbon fiber, and nano-scale carbon nanotube (CNT) anodes was built and tested with a ⁹⁰Sr source. Tungsten anodes of 500 μm down to 4 μm diameter were used to observe the gradual decrease in operating voltage for the proportional region with a decreasing anode diameter. The 40 nm diameter CNTs anodes ranged in length from 35 to 105 μm. The absolute detection efficiency was measured at ∼10⁻⁶%. An electrostatic computer model was used to predict the resulting electric field associated with a single CNT in the coaxial configuration. For a single anode coaxial design the model predicted that the electric field was insufficient for secondary ionizations which contributed to a low amplitude signal and that the small volume of the ionization region resulted in the low absolute detection efficiency. To overcome the problems of low absolute detection efficiency and operational issues with the single anode, CNT arrays were investigated. Electrostatic modeling of 100 nm×40 μm long CNTs in an array with a 50 μm pitch conducted for a parallel plate configuration indicated that each anode functioned independently.     

Effect of annealing temperature on structural, electrical and optical properties of B-N codoped ZnO thin films

The B-N codoped p-type ZnO thin films have been prepared by radio frequency magnetron sputtering using a mixture of nitrogen and oxygen as sputtering gas. The effect of annealing temperature on the structural, electrical and optical properties of B-N codoped films was investigated by using X-ray diffraction, Hall-effect, photoluminescence and optical transmission measurements. Results indicated that the electrical properties of the films were extremely sensitive to the annealing temperature and the conduction type could be changed dramatically from n-type to p-type, and finally changed to weak p-type in a range from 600 °C to 800 °C. The B-N codoped p-type ZnO film with good structural, electrical and optical properties can be obtained at an intermediate annealing temperature region (e.g., 650 °C). The codoped p-type ZnO had the lowest resistivity of 2.3 Ω cm, Hall mobility of 11 cm²/Vs and carrier concentration of 1.2 × 10¹⁷ cm^− 3.     

Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 °C and above. When annealing temperature was up to 300 °C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 °C. For annealing temperature at 300 °C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D₂₅₄^* to D₅₄₆^*) was calculated as high as 10³ for all PDs annealed at 300 °C and above.     

Electrical behavior of p-type PbS-based metal-oxide-semiconductor thin film transistors

Chemically deposited lead sulfide (PbS) thin films were used as the semiconductor active layer in common-gated thin film transistors. The PbS films were deposited at room temperature on SiO₂/Si-p wafers. Lift-off was used to define source and drain contacts (gold, Au) on top of the PbS layer with channel lengths ranging from 10 to 80 μm. The Si-p wafer with a back chromium-gold contact served as the common gate for the transistors. Experimental results show that as-deposited PbS are p-type in character and the devices exhibit typical drain current versus source-drain voltage (I_DS-V_DS) behavior as a function of gate voltage. The values of threshold voltage of the devices were in the range from −7.8 to 1.0 V, depending on the channel length. Channel mobility was approximately 10^− 4 cm²V^− 1 s^− 1. The low channel mobility in the devices is attributed to the influence of the microstructure of the nanocrystalline thin films. The electrical performance of the PbS-based devices was improved by thermal annealing the devices in forming gas at 250 °C. In particular, channel mobility increased and threshold voltage decreased as a consequence of the thermal annealing.     

Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy

The thin film transistors (TFTs) based on nitrogen doped zinc oxide (ZnO) were investigated by laser molecular beam epitaxy. The increase of ZnO films' resistivity by nitrogen doping was found and applied in enhancement mode ZnO-TFTs. The ZnO-TFTs with a conventional bottom-gate structure were fabricated on thermally oxidized p-type silicon substrate. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 10⁴. The threshold voltage is 5.15 V. The channel mobility on the order of 2.66 cm² V^− 1 s^− 1 has been determined.     

ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates

Metal-semiconductor field-effect transistors (MESFETs) were fabricated by reactive dc sputtering of either Ag, Pt, Pd, and Au as Schottky gate contacts on ZnO thin films grown by pulsed-laser deposition on a-plane sapphire substrates. The individual properties and influences of the four gate metals on the performance of the MESFETs have been investigated. Pt- and Ag-gate MESFETs show excellent electric properties with on/off-ratios of 4.5 × 10⁶ and 1.1 × 10⁸, respectively, and low off-currents in the picoampere range. The leakage currents for Pd- and Au-MESFETs are 2 and 4 orders of magnitude higher than for Ag. Maximum off-voltages of − 1.4 V have to be applied at the gate in order to fully close the n-type (normally-on) channels. Channel mobilities of 6.3, 11.4, 12.8, and 24 cm²/Vs were observed for Ag, Pt, Pd, and Au, respectively. Studies of the device performance at elevated temperatures in the range between 25 °C and 150 °C revealed that the MESFETs are stable at least until 75 °C. An annealing effect, which improved the MESFET's electric properties, could be observed for Ag, Pt, and Au.     

Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors

The effect of low-temperature (200 °C) annealing on the threshold voltage, carrier density, and interface defect density of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) is reported. Transmission electron microscopy and x-ray diffraction analysis show that the amorphous structure is retained after 1 h at 200 °C. The TFTs fabricated from as-deposited IZO operate in the depletion mode with on-off ratio of > 10⁶, sub-threshold slope (S) of ~ 1.5 V/decade, field effect mobility (μ_FE) of 18 ± 1.6 cm²/Vs, and threshold voltage (V_Th) of − 3 ± 0.7 V. Low-temperature annealing at 200 °C in air improves the on-current, decreases the sub-threshold slope (1.56 vs. 1.18 V/decade), and increases the field effect mobility (μ_FE) from 18.2 to 23.3 cm²/Vs but also results in a V_Th shift of − 15 ± 1.1 V. The carrier density in the channel of the as-deposited (4.3 × 10¹⁶ /cm³) and annealed at 200 °C (8.1 × 10¹⁷ /cm³) devices were estimated from test-TFT structures using the transmission line measurement methods to find channel resistivity at zero gate voltage and the TFT structures to estimate carrier mobility.     

Field emission studies of Te nanorods grown on Si (111) substrate

Tellurium nanorods were grown on silicon (111) substrates by thermal evaporation. The synthesized Te nanorods were characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM), prior to the field emission investigations. The TEM image revealed that the nanorods are needle-like having diameter less than 20 nm and length in the range of 200-400 nm. The selected area electron diffraction (SAED) pattern and high resolution TEM micrographs clearly reveal the crystalline nature of the Te nanorods. The field emission studies were carried out in a planar diode (close proximity) configuration at background pressure of ∼1 × 10⁻⁹ mbar. An emission current density of ∼8.5 μA/cm² has been drawn at an applied field of ∼3.2 V/μm. The Folwer-Nodhiem plot, showed a non-linear behaviour. The high value of field enhancement factor (β ∼ 1 × 10⁴), estimated from the slope of the F-N plot, suggests that the emission is indeed from the nanometric tips of the Te nanorods. The emission current stability studied at the preset value ∼3.5 μA over duration of more than 3 h is found to be very good, suggesting the use of Te nanorods as promising electron source for field emission based micro/nano-electronic devices.     

A rapid and efficient method to prepare aligned SnO2 nanorod arrays for field-emission application

Aligned tin dioxide (SnO₂) nanorods have been synthesized by high-frequency inductive heating. Nanorods were grown on silicon substrates vertically in less than 3 min, using SnO₂ and graphite as the source powder. Scanning electron microscopy and transmission electron microscopy showed nanorod with diameters from 25 to 50 nm. The turn-on field needed to produce a current density of 10 μA/cm² is found to be 1.6 V/μm. This type of SnO₂ nanorods can be applied as field emitters in displays as well as vacuum electric devices.     

Enhanced electron emission from titanium coated multiwalled carbon nanotubes

Enhanced field emission properties and improved crystallinity of titanium (Ti) coated multiwalled carbon nanotubes (MWCNTs), prepared by microwave plasma enhanced chemical vapour deposition have been observed. Ti films of extremely low thicknesses (0.5 nm, 1.0 nm and 1.5 nm) were coated over carbon nanotubes (CNTs) and their field emission behaviour was investigated. The turn on field of Ti coated CNTs was found to be low (~ 0.8 V/μm) as compared to pristine CNTs (~ 1.8 V/μm). The field enhancement factor for Ti coated CNTs was quite large (~ 1.14 × 10⁴) as compared to pristine CNTs (~ 6 × 10³). This enhancement in electron emission is attributed to the passivation of defects and improved crystallinity of CNTs. Surface morphological and microstructural studies were carried out to investigate the growth of pristine and Ti coated CNTs. It was observed that Ti nanoclusters adsorb on the edges of MWCNTs and increase their crystallinity. This increase is directly correlated with the thickness of Ti film deposited. Micro Raman spectroscopy confirmed the improved crystallanity of Ti coated CNTs.