低功耗有源UHF-RFID标签芯片

采用SMIC 0.18 μm CMOS工艺,设计了一种低功耗的超高频有源RFID标签芯片射频接收前端电路.其中,低噪声放大器(LNA)采用共源共栅源极电感负反馈差分结构,下变频混频器(Mixer)采用吉尔伯特(Gilbert)有源双平衡结构.通过整体及模块电路优化,该电路在较低功耗下仍然具有较好性能.仿真结果表明,整个接收端功耗仅为14 mW,与传统射频前端芯片相比,功耗降低53%;整体增益为21.6 dB,噪声系数7.1 dB,三阶输入截止点-18.9 dBm,满足有源UHF-RFID标签芯片低功耗高性能的应用需求.     

适用于高阶Sigma Delta调制器的全差分运算放大器的设计

比较了套筒式共源共栅、折叠式共源共栅和两级AB类输出的三种运算放大器结构,提出了一种可用于前馈型高阶Sigma Delta调制器的全差分跨导运算放大器.采用SIMC 0.18 μmCMOS工艺,完成了含共模反馈电路的两级AB类输出的跨导运算放大器的设计.利用Cadence/Spectre仿真器进行仿真,结果表明放大器的直流增益为62.19dB,单位增益带宽为205.56 MHz,相位裕度为70.81°,功耗仅为0.42 mW,适合于低压低功耗Sigma Delta调制器的应用.     

一种低功耗宽带低噪声放大器

设计了一种应用于无线传感网的低功耗宽带低噪声放大器。通过使用电容交叉耦合的共栅放大器结构来提高增益,同时实现宽带输入阻抗匹配。运用PMOS和NMOS层叠结构实现电流复用,降低了功耗。该低噪声放大器采用0.18 μm SMIC CMOS工艺设计。后仿真结果表明,该放大器在1.8 V电源供电下的功耗仅为0.712 mW,在3 dB带宽0.043~1.493 GHz范围内的峰值增益为20.44 dB,最小噪声系数为4.024 dB,输入3阶交调点为-3.73 dBm。     

一种低压低功耗CMOS折叠-共源共栅运算放大器的设计

设计了一种低压低功耗CMOS折叠-共源共栅运算放大器。该运放的输入级采用折叠-共源共栅结构,可以优化输入共模范围,提高增益;由于采用AB类推挽输出级,实现了全摆幅输出,并且大大降低了功耗。采用TSMC 0.18μmCMOS工艺,基于BSIM3V3 Spice模型,用HSpice对整个电路进行仿真,结果表明:与传统结构相比,此结构在保证增益、带宽等放大器重要指标的基础上,功耗有了显著的降低,非常适合于低压低功耗应用。目前,该放大器已应用于14位∑-Δ模/数转换电路的设计中。     

高精度离散型Sigma delta调制器设计

阐述一种采用SAR ADC作为多位量化器的三阶离散时间（DT）Sigma delta ADC调制器,在该调制器中,量化器由4位SAR ADC构成,相比于传统Flash ADC类型的量化器,减少了比较器的个数的同时,降低了调制器整体功耗。调制器结构选择单环CIFF结构兼顾了电路的精度和稳定性,电路总体采用分级结构实现,在第一级积分器中加入斩波稳定技术,消除低频噪声的干扰。提出的离散型Sigma delta ADC调制器采用TSMC 0.18μm CMOS工艺设计,在20kHz带宽实现了104.9dB的峰值信噪谐波失真比（SNDR）,功耗为5.98mW,有效位数(ENOB)为17.13位。     

一种低压低功耗CMOS折叠-共源共栅运算放大器的设计

本文设计了一种低压低功耗CMOS折叠一共源共栅运算放大器.该运放的输入级采用折叠-共源共栅结构,可以优化输入共模范围,提高增益;由于采用AB类推挽输出级,实现了全摆幅输出,并且大大降低了功耗.采用TSMC 0.18μm CMOS工艺,基于BSIM3V3 Spice模型,用Hspice对整个电路进行仿真,结果表明:与传统结构相比,此结构在保证增益、带宽等放大器重要指标的基础上,功耗有了显著的降低,非常适合于低压低功耗应用.目前,该放大器已应用于14位∑-△模/数转换电路的设计中.     

3.1～10.6 GHz低功耗超宽带低噪声放大器

采用TSMC 0.18 μm CMOS工艺库,设计并验证了一种应用于3.1～10.6 GHz频段的超宽带低噪声放大器。该放大器分为两级:采用跨导增强技术的共栅结构作为输入级,实现了输入阻抗匹配,提高了增益并降低了噪声;第二级是放大输出级,由两个共源放大管和源跟随器缓冲管构成,并采用两级电流复用配置将它们连接在一起,不但对信号进行了二次放大,降低了功耗,而且实现了输出匹配。仿真结果表明,在3.1～10.6 GHz频带范围内,放大器增益为14.8 dB,增益平坦度为SymbolqB@0.6 dB,噪声系数介于2.9～4.5 dB,输入和输出的回波损耗均优于-11 dB,1 dB压缩点为-20.8 dBm,在1.8 V电压下,静态功耗仅为8.99 mW。     

一种前馈架构的Σ-Δ调制器设计

基于40 nm CMOS工艺,设计了一种前馈架构的3阶1位量化离散时间Σ-Δ调制器。该调制器的信号带宽为100 kHz,过采样比为128。为了适应低电压环境,输入端开关采用栅压自举结构以提升采样信号的线性度,运算放大器采用两级结构以增加输出摆幅。为了降低系统功耗,比较器采用动态结构实现。仿真结果表明,在1.2 V电源电压下,该调制器的最高信噪比为88.1 dB,功耗为1.5 mW。     

低功耗准线性CMOS光电耦合放大器

设计了一款CMOS光电耦合隔离放大器(简称光电耦合放大器),其中输入放大器采用"套筒式"共源一共栅CMOS运放A1,输出放大器选用两级共源一共源CMOS运放A2,A1的输出信号经过两个光电耦合器反馈到输入回路,且A1、A2分别引入负反馈.此外,还采取了其他的改进措施.实验结果表明,与BiCMOS光电耦合放大器相比,所设计的CMOS光电耦舍放大器的±3 dB带宽约增加14 kHz,功耗降低5.46 mW,增益线性度提高到5.9×10-5,因而特别适合于高线性度、低功耗的光电信号处理和智能检测系统中.     

5.8GHz低噪声放大器的设计与优化

设计了一种低压、低功耗、输出阻抗匹配稳定的CMOS差分低噪声放大器.基于源极电感负反馈共源共栅结构,提出了基于MOS管中等反型区最小化Vdd·Id的方法,以优化功耗.在共栅晶体管处并联正反馈电容,以提升电路增益.对电路的噪声系数、输出阻抗稳定性、芯片面积等也进行了优化.仿真结果表明,当电源电压为1V,工作频率为5.8 GHz时,设计的低噪声放大器的噪声系数为1.53 dB,输入回波损耗为-22.4 dB,输出回波损耗为-24.6 dB,功率增益为19.2dB,直流功耗为4.6 mW.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.