数字阵雷达天线波瓣图测试方法与试验验证

针对固定式相控阵雷达在中场法或远场法中不能实时得到天线波瓣图的问题,提出了采用扫描波瓣图替代天线波瓣图进行天线测试的方法。从理论上分别推导了和波束与差波束扫描波瓣图和天线波瓣图的解析式,研究了单元波瓣图对扫描波瓣图和天线波瓣图的影响,指出了在单元波瓣主瓣范围内扫描波瓣图和天线波瓣图近似等价。仿真和试验结果 均表明:扫描波瓣图和天线波瓣图在各项性能指标上都是等价的,可用于指导雷达总体依据扫描波瓣图对天线进行验收。     

单脉冲二次监视雷达天线波瓣测量方案研究

对单脉冲二次雷达工作原理作简要介绍,分析天线波瓣外部测量法与内部测量法的优缺点以及波瓣发生变形产生的后果,从而对外部测量法进行相应改进。使用振幅一相位法测试二次雷达天线水平极化图和垂直极化图,并给出幅相不一致和交叉极化影响的解决方法,最终设计了一套二次雷达天线极化测量系统。该系统为民航雷达检测中心的建设提供理论与实践指导。     

天线波瓣图检测系统

天线方向图、增益、波瓣宽度是表征天线性能的主要参数，本文首先介绍了天线波瓣图检测系统的基本原理，接着给出了系统性能以及主要技术指标，并结合实际设计过程中的难点讲述了解决问题的主要手段，利用本软件可以大大提高天线波瓣检测的效率，缩短开发时间，具有较高的实用价值。     

基于波瓣分裂的米波雷达低仰角测高方法及其应用

针对米波雷达的波束较宽、由于地面反射引起波瓣分裂,通常只能估高而不能测高这一难题,提出一种基于分裂波瓣的米波雷达低仰角测高方法——比相比幅法.该方法采用多个不同高度的测高天线,由于不同高度天线的分裂波瓣有一定的相位关系,利用该相位关系确定目标所在仰角区间;利用不同天线接收信号幅度进行比幅处理提取归一化误差信号;再查表得到目标的高度.分析地面起伏对测高精度的影响;推导不同阵地情况下的比幅误差曲线.将该方法应用于某型雷达,在我国首次成功地进行了米波雷达测高.试验结果表明该方法是行之有效的.     

干扰天线高度优化选取的方法

地表反射引起的波瓣分裂效应对UHF波段雷达干扰站干扰性能会产生严重影响,必须研究解决的方法。首先讨论了多路径传输理论并在此基础上建立了考虑地表反射的干扰方程模型;其次分析了波瓣分裂对干扰性能的影响;最后根据干扰天线高度影响波瓣分裂的结论,提出两种干扰天线高度优化选取的方法并通过仿真实验验证了两种方法的有效性。     

DBF技术在扩大米波雷达测高范围中的应用

针对基于波瓣分裂的米波雷达测高方法只能在低仰角范围内(1°~11°)测高的问题,提出一种将数字波束形成(DBF,Digital Beam Forming)技术与波瓣分裂相结合的米波雷达测高方法,以扩大仰角测量范围(1°~25°)。该方法采用5个不同高度的天线接收回波信号,利用DBF技术,判断出目标的仰角范围,再利用“比幅-比相”的方法进行测高。计算机仿真结果表明:该方法对仰角在25°以下的目标能有效地测量高度。     

赋形波束双弯曲反射面天线远场波瓣计算

针对赋形波束双弯曲反同天线出现条带相交情况，推导了按新坐标计算反射面天线远场波瓣公式，消除了条带相交区域的复复计算，解决了一般情况下赋形波束双弯曲反同天线的波瓣计算问题，提高了设计精度。文中还给出了设计实例和计算测试结果。     

不同测量标准对1 GHz以上RE要求的解读

不同标准对1 GHz以上辐射发射(RE)测量要求有所不同,尤其是对测试环境(即电波暗室)的要求或者设计,需考虑多项影响因素,特别是内部净空使用高度问题.基于多年的工程经验,总结了不同标准需要注意的地方,重点解读了接收天线在高度上是否需要连续升降扫描、方向上是否需要俯仰测量等问题,并给出了相应的应用分析.     

减弱地面多径影响的一种方法

本文分析了地面反射后天线的波瓣,利用阵列天线中单元相位可控的特点,针对垂直面为赋形波束的情况,提出了利用天线的相位波瓣来减弱地面多径效应引起的花瓣的方法,给出了本方法的计算机模拟结果。结果表明,对于较低频率和较小尺寸的天线来说,本文提出的方法可使雷达的中低空性能大大改善。     

阵列部分单元相位加权波瓣综合

从自适应信号处理的角度出发,描述了阵列天线部分单元仅相位加权波瓣综合方法,并通过计算实例验证了该方法的正确性。该方法可用在天线波瓣图中设置宽凹口以对付宽带宽角干扰,亦可用于机载雷达天线不对称波瓣赋形以抑制地海杂波等。部分单元相位加权波瓣综合方法比满阵单元相位加权波瓣综合方法更具有实现性和灵活性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.