N-TiO2 nanoparticles embedded in silica prepared by Ti ion implantation and annealing in nitrogen

Room-temperature Ti ion implantation and subsequent thermal annealing in N₂ ambience have been used to fabricate the anatase and rutile structured N-doped TiO₂ particles embedded in the surface region of fused silica. The Stopping and Range of Ions in Matter (SRIM) code simulation indicates a Gaussian distribution of implanted Ti, peaked at ∼75 nm with a full width at half maximum of ∼80 nm. However, the transmission electron microscopy image shows a much shallower distribution to depth of ∼70 nm. Significant sputtering loss of silica substrates has occurred during implantation. Nanoparticles with size of 10-20 nm in diameter have formed after implantation. X-ray photoelectron spectroscopy indicates the coexistence of TiO₂ and metallic Ti in the as-implanted samples. Metallic Ti is oxidized to anatase TiO₂ after annealing at 600 °C, while rutile TiO₂ forms by phase transformation after annealing at 900 °C. At the same time, N-Ti-O, Ti-O-N and/or Ti-N-O linkages have formed in the lattice of TiO₂. A red shift of 0.34 eV in the absorption edge is obtained for N-doped anatase TiO₂ after annealing at 600 °C for 6 h. The absorbance increases in the ultraviolet and visible waveband.     

Sub-surface retention of Pb atoms in silicon after low-energy ion implantation and electron beam annealing

Low-energy Pb ion implantation into (1 0 0) Si and subsequent high-vacuum electron beam annealing was used to study the potential of sub-surface retention of Pb atoms after applying a high temperature annealing process. 7 keV Pb⁺ ions were implanted into p-type (1 0 0) Si at room temperature with a fluence of 4 × 10¹⁵ ions cm⁻². The implantation results in a Pb depth distribution that has a calculated Pb peak concentration of 23.9 at.% at a depth of 8.0 nm. The Pb implanted Si substrates were annealed with a high-current 20 keV electron beam at 200-700 °C for 15 s. The Pb loss by out-diffusion was measured with RBS. Key results are: (i) minimal Pb loss in samples annealed up to 400 °C, (ii) emerging out-diffusion above 400 °C, (iii) retention of Pb atoms in the near-surface region in samples annealed up to 700 °C. Comparison of the RBS data with the calculated evaporation rate of Pb under similar conditions reveals two distinctive temperature ranges in which the measured Pb loss of the implanted samples disagrees with the calculated Pb loss: (1) Pb atoms diffused out of the samples at a higher rate in the temperature range up to 400 °C and (2) the Pb atoms diffused out of the samples at a much slower rate above 450 °C. Both phenomena are attributed to the ion implantation process.     

TiO2 nanofilm growth by Ti ion implantation and thermal annealing in O2 atmosphere

TiO2 nanofilms on surface of fused silica were fabricated by Ti ion implantation and subsequent thermal annealing in oxygen ambience. The silica glasses were implanted by 20 k V Ti ions to 1.5 × 1017ions/cm2 on an implanter of metal vapor vacuum arc(MEVVA) ion source. Effects of annealing parameters on formation,growth and phase transformation of the TiO2 nanofilms were studied in detail. Optical absorption spectroscopy,Raman scattering spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy measurements were done to figure out formation mechanism of the TiO2 nanofilms.The formation of TiO2 nanofilms was due to out-diffusion of the implanted Ti ions to the substrate surface,where they were oxidized into TiO2 nanoparticles. Formation, phase, and thickness of the TiO2 nanofilms can be well tailored by controlling annealing parameters.     

离子注入对电器触头性能的影响

对两种电器触头注入1×10~(17)/cm~2的氮离子,然后做低压电器通断试验,测量了触头的重量损失、温升、接触电阻、触头材料转移等参数,发现离子注入方法处理对电器触头性能有不同程度的改善。     

Effect of annealing on structure and hardness of oxygen-implanted layer on Ti6Al4V by plasma-based ion implantation

Ti6Al4V was treated by oxygen plasma-based ion implantation at the voltage pulses of −30 and −50 kV with a constant fluency of 0.6 × 10¹⁷ O/cm². After implantation, the annealing in vacuum was applied to the implanted samples to control phase structure of the implanted layer. The higher voltage implantation forms nano-size rutile in the implanted layer, but the subsequent annealing at 600 °C induces the resolution of the previous rutile. Although, the lower voltage implantation does not lead to rutile, the annealing can precipitate anatase and rutile in the implanted layer. The higher voltage implantation results in a higher hardness of the implanted layer. The annealing at 500 °C leads to an apparent increase in hardness of the implanted layer, but the annealing at 600 °C induces a rapid decrease in hardness.     

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 keV ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5-1 nm, buried SiC layer being formed. We investigated the effect of thermal annealing on further completion of the carbide layer. For the annealing we used a vacuum furnace, a rapid thermal annealing system in argon atmosphere, and a scanning e-beam, for different temperatures, heating rates, and annealing durations. Annealing to a temperature as low as 600 °C resulted in the formation of a 4.5 nm smooth, amorphous carbide layer in the carbon-implanted region. However, annealing at a higher temperature, 1000 °C, lead to the formation of a rough poly-crystalline carbide layer. The multilayers were characterized by grazing incidence X-ray reflectometry and cross section TEM.     

Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4 × 10^?7 Ω cm² can be fabricated on the n-type layer having a low sheet resistance of 145 Ω/sq, which has been formed by the dual-energy Si ion implantation (80 keV:1.01 × 10¹⁵/cm² + 30 keV:1.6 × 10¹⁴/cm²) and subsequent annealing at 1200 °C for 2 min using a Si₃N₄ layer as an encapsulant.     

PⅢD技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积(PⅢ&D)技术在2Cr13钢表面制备了Ti/DLC纳米多层薄膜.分析了膜层的微观结构和机械特性.实验结果表明:纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高.硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看:纳米多层薄膜保持了类金刚石(DLC)薄膜低摩擦系数的特性,具有良好的承载能力以及膜一基结合特性.     

The effects of the annealing time on helium implantation in Si

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles.     

Channeling effects and defect accumulation in ion implantation

In channeling implantation range and damage distributions and the dechanneling probability are strongly influenced by lattice vibrations, by a thin amorphous surface layer, by radiation-induced defect production during ion bombardment and by pre-existing defects. This is demonstrated in the example of100 channeling implantation of 80 keV boron into silicon using our binary collision code Crystal-TRIM. The comparison with experimental data shows that the simple model of defect accumulation used is sufficient to simulate the dose dependence of the range profiles. However, the simulations do not produce realistic damage distributions for high-dose implantation.     

Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing

High intensity light pulse irradiation of monocrystalline silicon wafers is usually accompanied by inhomogeneous surface melting. The aim of the present work is to induce homogeneous buried melting in silicon by germanium implantation and subsequent flash lamp annealing. For this purpose high dose, high energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp irradiation at high energy densities leads to local melting of the germanium rich buried layer, whereby the thickness of the molten layer depends on the irradiation energy density. During the cooling down epitaxial crystallization takes place resulting in a largely defect-free layer. The combination of buried melting and dopant segregation has the potential to produce unusually buried doping profiles or to create strained silicon structures.     

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 °C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.     

离子注入微型半导体探测器的研制

国际上最早使用的微型探测器是盖革-缪勒计数器,并用它首次对活体内的肿瘤进行了测试。六十年代以来,它逐步为半导体探测器所代替。七十年代以来,微型半导体探测器已广泛地用于血流动力学、肺功能研究以及食管、胃和眼睛等体内和体表器官的诊断。我们也曾用半导体硅探测器对甲状腺节结进行过测试,效果良好。     

高剂量注入中离子溅射的影响

在离子注入材料改性的研究过程中(金属、绝缘材料和光学材料等),在许多场合下,要求注入的元素(如Fe中注入N、Y、Ph和Sn等)在靶子中占百分之几的含量,这就要求注入剂量高达10~(17)/cm~2到10~(12)/cm~2。由于离子注入的溅射效应在低能和大剂量注入中是相当明显的,因此,对这些元素高剂量注入后的杂质分布、溅射系数、溅射厚度和靶子中杂质的收集量做一分析是十分重要的。     

1.55 MeV 3He离子辐照单晶Si引起的损伤效应研究

室温下使用1.55 MeV、5×1013-5×1016/cm2注量的3He离子注入单晶Si,采用透射电子显微镜(TEM)观测分析了高温退火后单晶Si中由注入引起的损伤形貌,同时使用核反应分析(NRA)技术研究了3He气体原子的热解吸.结果显示,低注量3He离子注入在Si中产生的缺陷主要为一些小尺寸的位错或位错环;在中等照射剂量,退火导致了气泡和气泡团簇的形成并伴随着高密度的位错环从这些气泡团簇中发射出来;而对于较高的照射剂量,3He离子注入加上随后的高温退火则在离子射程附近产生了一个具有确定边界的空腔带.结合NRA结果对实验现象进行了分析.     

RBS analyses of xenon-irradiated Ti and TiN films

TiN films of 30–300 nm thickness, deposited onto stainless steel via magnetron sputtering, and 10 μm thick Ti foils were irradiated with 80–360 keV Xe⁺ ions at influences of φ = 10¹⁵–10¹⁷ ions/cm². The Xe content was depth-profiled by means of 900 keV He⁺⁺ Rutherford backscattering. Irradiations of films with a thickness exceeding the ion range (at 80 and 250 keV) led to saturation effects due to sputtering and outdiffusion from the near-surface region. The sputtering yields deduced at low Xe fluences were compared to calculations for mono-elemental and compound sputtering. Surface blistering was observed after 250 keV saturation implantation into Ti. For TiN layers with a thickness comparable to the ion range, precipitation of the mixing gas at the interface was observed which finally led to the destruction of the layers. The dependence of the Xe fraction accumulated in the interface is discussed in terms of thermal-spike calculations.     

Ti离子注入SiO_2合成TiO_2纳米颗粒及其光学性质

将105 keV的Ti离子注入到SiO_2玻璃至1×10~(17)、2×10~(17) cm~(-2),并在氧气气氛下进行热处理,借助紫外可见分光光度计、掠入射X射线衍射光谱仪、透射电子显微镜、原子力显微镜等多种测试仪器,详细研究了Ti O2纳米颗粒的形成、结构、分布及其光吸收和催化性能。研究结果表明,高注量Ti离子注入结合氧气气氛热处理可以在SiO_2基底中形成TiO_2纳米颗粒,并以金红石相为主。合成的TiO_2纳米颗粒的形貌明显依赖于离子的注量,随离子注量增加,形状不规则且分散排列的TiO_2纳米颗粒会转变成尺寸较为均匀、分布致密的纳米颗粒,进而形成了TiO_2类颗粒膜结构。另外,光催化降解实验结果表明,合成的纳米颗粒对罗丹明B溶液具有一定的降解作用。