非傍轴余弦-高斯光束的传输

从功率密度的二阶矩方法出发,对非傍轴余弦一高斯(CoG)光束的传输特性进行了系统的研究.结果表明,基于二阶矩定义的束宽在传输过程中满足简单的双曲线变化规律.非傍轴CoG光束的M2因子不仅与偏心参数α有关,而且还与f参数有关.在1/f足够小时,M2因子可小于1.当1/f→0时,远场发散角趋于渐近值63.435°.对于α=0(Ω0=0)的特例,非傍轴CoG光束的M2因子退化为非傍轴高斯光束的M2因子.     

非傍轴衍射光束的传输特性

基于小衍射源和衍射远场的特点,简化了瑞利-索末菲标量衍射积分公式,并应用于分析非傍轴衍射光束的衍射远场总功率和光束传输因子特性。由于物理概念上的空间频谱的定义域局限在一定范围,基于此计算的非傍轴衍射光束的衍射远场总功率不满足能量守恒定律,基于此计算的非傍轴衍射光束的光束传输因子也与常识不符。当采用数学概念上的空间频谱分析上述特性时,两个符合常识的规律被重提,并以非傍轴基模高斯光束衍射远场总功率和光束传输因子的相对计算误差说明上述结论。     

洛伦兹-高斯光束的传输特性

洛伦兹-高斯光束是用于描述某些发散程度较大的激光光源而引入的,在源平面上的q参数趋向于无穷的条件下,洛伦兹-高斯光束退化为洛伦兹光束.基于柯林斯积分公式,导出了洛伦兹一高斯光束经傍轴abcd光学系统的解析传输公式,进行了相关的数值计箅以揭示其傍轴传输特性.基于矢量瑞利-索末菲衍射积分公式,导出了矢量洛伦兹-高斯光束非傍轴条件下的解析传输公式,进行了相应的数值计算;作为一般公式的特例,给出了相应的远场表达式和傍轴结果.     

一维会聚非傍轴高斯光束焦线附近的光场特性

傍轴近似常被用于光束传输理论的表达,数值计算常被用于非傍轴光束的传输特性分析。为了使一维会聚非傍轴高斯光束的传输特性更加简明,本文基于倾斜因子由观察方倾斜角余弦平方根表达的非傍轴衍射积分公式,给出了符合行波场辐射能守恒定律的一维会聚非傍轴高斯光束的焦平面光场分布表达,同时给出了焦点附近一维会聚非傍轴高斯光束的轴上点光强和相位特性表达。当一维会聚非傍轴高斯光束的最大倾斜角远大于高斯光束的远场发散角时,合理的观察方倾斜因子可将高斯光束传输特性从傍轴领域延拓到非傍轴领域。本文阐明了一维会聚非傍轴高斯光束的传输特性,并验证了用观察方倾斜角余弦平方根表达观察方倾斜因子的合理性。     

非傍轴截断双曲余弦高斯光束的M2因子

基于功率密度的二阶矩方法,对非傍轴截断双曲余弦高斯(ChG)光束的束宽、远场发散角和M2因子进行了研究.数值计算结果表明,非傍轴截断ChG光束的M2因子不仅与截断参数δ、偏心参数α有关,而且与初始束腰宽度和波长之比w0/λ有关.在δ足够小时,M2因子可小于1.当δ→ 0时,远场发散角趋于渐近值63.435°.对于α=0(Ω0=0)和δ→∞的特例,我们的结果分别退化为非傍轴截断高斯光束和非傍轴无截断ChG光束的M2因子.     

非傍轴部分相干修正贝塞尔-高斯光束的传输

利用广义瑞利衍射积分公式和部分相干光理论,推导了任意阶非傍轴部分相干修正贝塞尔-高斯光束在自由空间传输的解析表达式.作为特例,给出了非傍轴部分相干修正贝塞尔-高斯光束的远场公式和傍轴部分相干修正贝塞尔-高斯光束的传输方程.数值计算和分析表明,f参数对光束的非傍轴特性有重要影响,此外,相干度也影响部分相于修正贝塞尔-高斯光束的非傍轴行为.     

非傍轴双曲余弦高斯光束质量因子的研究

运用非傍轴标量光束的光强二阶矩理论,计算了非傍轴双曲余弦高斯光束的束腰半径、远场发散角、质量因子,并与傍轴双曲余弦高斯光束的质量因子进行了比较研究。数值计算表明:当双曲余弦高斯光束束腰半径较大时,傍轴与非傍轴理论计算的光束质量因子变化规律完全相同;束腰半径较小时,傍轴理论的计算结果有较大误差。     

非傍轴余弦平方-高斯光束的传输特性

基于功率密度的二阶矩方法,数值模拟研究了非傍轴余弦平方-高斯光束的束宽、远场发散角和M2因子.计算结果表明:1)束腰宽度W0(0)随w0/λ的增大而增大.当w0/λ较大(w0/λ≥0.5)时,束腰宽度随着偏心参数的增大而减小. 2)当w0/λ→0时,远场发散角趋于渐近值θ0max=63.435°,与偏心参数α无关.3)在非傍轴范畴,余弦平方-高斯光束的M2因子不仅与偏心参数α有关,而且还与初始束腰宽度和波长之比w0/λ有关.当w0/λ足够小时, M2因子可小于1.对给定的偏心参数α,M2因子随w0/λ的变化并非总是单调的.M2因子随w0/λ的增大而增大,当达到最大值后又逐渐减小,最后渐近趋于一稳定值.     

非傍轴双曲正弦高斯光束质量因子M2的研究

在标量光场角谱衍射理论的基础上,应用精确光强定义下的非傍轴标量光束的光强二阶矩理论,计算了非傍轴双曲正弦高斯光束的束腰半径、远场发散角、质量因子,并与傍轴双曲正弦高斯光束的质量因子进行了比较研究。数值计算表明,当双曲正弦高斯光束束腰半径较大时,传统光强定义下的光强二阶矩理论近似成立,傍轴与非傍轴理论计算的光束质量因子变化规律完全相同;束腰半径较小时,傍轴理论计算的结果有较大误差,必须采用精确光强定义下的非傍轴光束质量因子的定义作修正。     

TE矢量高斯光束的二阶矩传输

运用光束传输的非傍轴矢量矩理论,对TE矢量高斯光束的传输进行了研究,给出了束腰、横向发散角和光 束传输因子的积分表达式。基于能流二阶矩定义的横向光束宽度在传输过程中服从简单的双曲线变化规律。数 值计算表明,在高度非傍轴情形下,由于TE偏振导致两个横向存在不同的光束传输特性,且最大的横向发散度超 过了非傍轴标量高斯光束的发散度极限63.43°,接近于90°,这与波动光学理论相符合,其中x方向上的发散度略 比y方向上的大。而对于傍轴情形,在非傍轴标量高斯光束傍轴化条件下,TE矢量高斯光束的传输可简化为横基 模傍轴标量高斯光束,稍有区别的是其光束传输因子始终保持略大于1,且永远不能精确地等于1。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.