Field-Line-Circuit Coupling Based Method for Predicting Radiated Electromagnetic Emission of IGBT-PMSM Drive System

Electric drive system with Insulated gate bipolar transistor (IGBT) power device is widely used in Electric vehicle (EV), which consists of inverter, cables and Permanent magnet synchronous motor (PMSM). Due to the fast switching in di/dt and dv/dt of IGBT device, the system produces serious radiated Electromagnetic interference (EMI) through the interconnection cables. Thus, modeling of EMI source, propagation path and load PMSM is the key to accurately evaluate the system's radiation level. In addition, the system's radiated EMI involves the integrated calculation of circuit, cable and electromagnetic field, which cannot be solved by using a single circuit or electromagnetic calculation method. Therefore, this paper develops an effective field-linecircuit coupling based method to investigate the radiated EMI problems for IGBT-PMSM drive system, which is validated by experimental measurement. Besides, the impact of power cable parameters on radiated EMI is discussed. The proposed approach has guiding significance for electromagnetic compatibility design of EV.     

Multiple Slope Switching Waveform Approximation to Improve Conducted EMI Spectral Analysis of Power Converters

An improved and simplified electromagnetic interference (EMI) modeling method based on multiple slope approximation of device-switching transitions for EMI analysis of power converters is presented. The traditional noise source modeling method, which uses single slope for rise and fall transition, is studied, and the criteria for reasonable modeling in the frequency range is analyzed. The turn-on and turn-off dynamics are investigated by dividing the nonlinear transitions into several stages based on an insulated gate bipolar transistor (IGBT) behavior circuit model. Real device-switching voltage and current waveforms are approximated by piece-wise linear lines and modeled by multiple dv/dt and di/dt slopes. The predicted EMI spectra suggest that high-frequency EMI noise is modeled with an acceptable accuracy. The proposed method was verified experimentally for a dc-dc buck converter     

Characterization of power electronics system interconnectparasitics using time domain reflectometry

The significance of interconnect parasitics of power electronics systems is their effects on power converters' electromagnetic interference (EMI)-related performances, such as voltage/current spikes, dv/dt, di/dt, conducted/radiated EMI noise, etc. In this paper, a time domain reflectometry (TDR) measurement-based modeling technique is described for characterizing interconnect parasitics in switching power converters. Experiments are conducted on power components of a prototype high-power inverter, including insulated gate bipolar transistor (IGBT) modules, busbar and bulk capacitors. It is shown that the interconnect inductance of the IGBT module can be extracted completely using TDR. It is also shown that the busbar equivalent circuit can be modeled as transmission line segments or L-C filter sections, and the bulk capacitor contains a significant equivalent series interconnect inductance     

DV/DT related spurious gate turn-on of bidirectional switches in a high-frequency cycloconverter

We identified a failure mode in a two stage dc/ac converter, comprising a high-frequency dc/ac inverter followed by an ac/ac cycloconverter, both operating at the same switching frequency. The failure-mode is a short-circuit condition, which is a combined effect of the reverse recovery of the MOSFET body diode and simultaneous spurious turn-on of the bidirectional switches of the cycloconverter, owing to a significantly high dv/dt (>2/spl times/10/sup 8/V/ns). A high dv/dt causes appreciable current to flow through the gate-to-drain (Miller) capacitance, thereby producing a significant amount of voltage drop across the external gate resistance. Consequently, the gate-to-source voltage of the power MOSFET may exceed the threshold voltage of the device, which turns the device on. We explain the mechanism for the dv/dt-related gate turn-on and present experimental results to validate the explanation. We also demonstrate, how a two-fold increase in the value of external gate resistance of the inverter switches (to reduce the dv/dt applied to the cycloconverter) reduces the periodicity of the short-circuit condition.     

Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator

Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the temperature dependence of the on-state characteristics, and the di/dt, dv/dt, and temperature dependence of the reverse-recovery characteristics. The model results are presented for 1500 V SiC Merged PiN Schottky (MPS) diodes, 600 V Schottky diodes, and 5000 V SiC PiN diodes. The devices studied have current ratings from 0.25 A to 5 A and have different lifetimes resulting in different switching energy versus on-state voltage trade-offs. The devices are characterized using a previously reported test system specifically designed to emulate a wide range of application conditions by independently controlling the applied diode voltage, forward diode current, di/dt, and dv/dt at turn-off. A behavioral model of the test system is implemented to simulate and validate the models. The models are validated for a wide range of application conditions for which the diode could be used.     

牵引用3 300 V平面栅IGBT栅极台面结构研究

针对机车牵引用3 300 V/1 500 A IGBT功率模块,采用TCAD仿真工具研究了不同栅极结构对器件静态和动态参数的影响。当平面栅IGBT采用栅极台面结构且台面厚度逐渐降低时,器件的静态阻断电压提高,开关损耗降低,但是器件的开关时间增加;此外,关断时过快的dv/dt会引起栅极电压振荡,开启时过快的di/dt会引起很大的电流过冲,导致器件应用的可靠性降低。在机车牵引的应用环境下,IGBT的栅极结构参数需要从电学参数和可靠性两个方面进行折中设计。     

级联式Buck-Boost校正电路在高压电子镇流器中的应用

本文提出了一种带有无源无损缓冲结构的级联式buck-boost校正电路,并成功地应用在高压式电子镇流器中.缓冲电路通过抑制反向恢复电流所引起的di/dt和漏源极电压的dv/dt,有效地减少了开关损耗和EMI噪音.Buck电路中的IGBT实现零电流开通和零电压关断,同时续流二极管也工作在零电压状态.研制的380 V交流输入,400 V直流输出,额定功率600W的实验样机,其功率因数达0.98,THD小于11%.     

The di/dt capability of thyristors

This paper describes an experimental investigation of the di/dt failure mechanism of thyristors. The location of the initial turn-on region and the spread of the "on" region were observed on a specially designed thyristor having many monitoring electrodes. The turn-on process was studied for triggering by gate, by breakover, and by dv/dt. In many cases it was found that turn-on occurred at almost the same region, whether it was triggered by breakover or by dv/dt. This area coincided with the final holding position in the turn-off process. The di/dt capability of the thyristor was measured. It was found that the capabilities were almost the same for the three triggering methods. The destruction temperature in the di/dt test was estimated from the area of the burn-out spots and the energy dissipation.     

电压源PWM变频器驱动系统负面效应及其对策研究

变频器在工农业，国防等领域做出了臣大的贡献的同时，也产生了显著的负面效应。现代电力电子器件的飞速发展，功率开关器件的快速导通或关断特性将使逆变器的输出产生很高的dv／dr。dv／dr过高将对变频器驱动系统产生一系列危害，如增大了电机内部的功率损耗；加快了电机轴承的损坏速度；对电源产生强烈的电磁干扰；还会引起电机保护电路的误动作；当电机和变频器之间不可避免地采用长线电缆连接时，还会在电机端出现过电压现象，这种现象不但使上述负面影响进一步恶化，还使电机绝缘提早老化，甚至被击穿，缩短了电机的使用寿命。本文分析了变频器输出负面效应产生的本质，对减小或消除这些危害所采取的不同方案进行了评价，提出了一种新颖的消除这些危害的有效方案。     

电压源PWM变频器驱动系统负面效应及其对策研究（二）

变频器在工农业，国防等领域做出了巨大的贡献的同时，也产生了显著的负面效应。现代电力电子器件的飞速发展，功率开关器件的快速导通或关断特性将使逆变器的输出产牛很高的dv／dt。dv／dt过高将对变频器驱动系统产生一系列危害，如增大了电机内部的功率损耗；加快了电机轴承的损坏速度；对电源产生强烈的电磁干扰；还会引起电机保护电路的误动作；当电机和变频器之间不可避免地采用长线电缆连接时，还会在电机端出现过电压现象，这种现象不但使上述负面影响进一步恶化，还使电机绝缘提早老化．甚至被击穿，缩短了电机的使用寿命。本文分析了变频器输出负面效应产生的本质，对减小或消除这些危害所采取的不同方案进行了评价，提出了一种新颖的消除这些危害的有效方案。     

An improved inverter output filter configuration reduces common anddifferential modes dv/dt at the motor terminals in PWM drivesystems

In this paper, an improved inverter output filter is proposed for pulsewidth-modulated (PWM) drive systems. The proposed filter is shown to effectively reduce both the differential and common modes dv/dt at the motor terminals, even in the presence of long motor leads. Reducing differential mode dv/dt reduces overvoltages at the motor terminals and lowers the stress on the motor insulation. Lowering common mode dv/dt is shown to significantly reduce high-frequency leakage currents to ground and induced shaft voltage in the motor. An important advantage of the approach is that the filter can be installed within the inverter enclosure to achieve both the differential and common modes dv/dt reductions at the motor terminals. Thus, the use of the filter can contribute to enhanced bearing life and improve reliability of PWM drive systems. Analysis, design equations, and experimental results on a 480-V 20-hp PWM drive system are presented. The filter configuration is an excellent candidate for many new and retrofit PWM 480-V/575-V drive systems     

A passive lossless snubber cell for nonisolated PWM DC/DCconverters

A passive lossless snubber cell is proposed to improve the turn-on and turnoff transients of the MOSFETs in nonisolated pulsewidth modulated (PWM) DC/DC converters. Switching losses and EMI noise are reduced by restricting di/dt of the reverse-recovery current and dv/dt of the drain-source voltage. The MOSFET operates at zero-voltage-switching (ZVS) turnoff and near zero-current-switching (ZCS) turn-on. The freewheeling diode is also commutated under ZVS. As an example, operation principles, theoretical analysis, relevant equations, and experimental results of a boost converter equipped with the proposed snubber cell are presented in detail. Efficiency of 96% has also been measured in the experimental results reported for a 1 kW 100 kHz prototype in the laboratory, Six basic nonisolated PWM DC/DC converters (buck, boost, buck-boost, Cuk, Sepic, and Zeta) equipped with the proposed general snubber cells are also shown in this paper     

Analysis and design of class E isolated DC/DC converter using classE low dv/dt PWM synchronous rectifier

A class E isolated DC/DC power converter for regulating the output voltage at a fixed switching frequency is presented, analyzed and experimentally verified. It consists of class E series-resonant inverter, high-frequency transformer and class E low dv/dt pulse width modulation (PWM) synchronous rectifier. By controlling the conduction time of the controlled switch in the rectifier, high-frequency AC current is rectified and the output voltage can be controlled at the same time. The zero voltage switching (ZVS) condition of all switches can be maintained from full-loaded to open-loaded. The theoretical predictions were in good agreement with the experimental measurements and the maximum efficiency measured at a switching frequency of 1 MHz was 91.2%     

低压大电流直流开关电源电磁兼容设计研究

文章提出了一种符合EMC要求的低压大电流直流开关电源的设计方法。该方法运用12脉波整流器和ZVS PWM技术来减少主电路的dU/dt(di/dt)和电磁干扰。另外,针对设备特性,在系统设计、PCB板布线、高频变压器工艺和结构设计等方面采用了一些必要的电磁兼容措施。电磁兼容实验验证了这些方法的有效性。     

Progress in light activated power thyristors

Light activated power thyristors would have considerable advantages in intermediate- and high-voltage circuits, as power and trigger circuits could be electrically separated by use of glass fiber cables. Besides high-voltage capability, such devices must have turn-on delay times, dv/dt capabilities, and di/dt stabilities which are comparable to conventionally fired thyristors. The necessary trigger power, however, has to be kept low enough to enable firing with GaAs light emitters, which are available now or will be in the near future. The dv/dt sensitivity is an essential limitation for the reduction of the minimum necessary trigger power. Optimizing of the thyristor emitter shunts results in an already acceptable compromise, but much better results can be obtained by a gate structure which actively compensates dv/dt fault triggering. Our test devices show good turn-on behavior. A short survey on different GaAs-light sources and the coupling problem is given.     

Bridge-arm current reduction in DC-AC inverter

When building single-phase inverter with power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), switching action may cause poor reverse recovery characteristic due to body parasitic diode of MOSFET, which can produce peak current in the circuit loop and the high transient voltage and current (dv/dt, di/dt) during the turning-on period. In this article, a novel method to reduce the bridge arm current spike in DC-AC inverter is proposed. The presented method uses the improved and simplified coupled inductor which is connected between the upper and lower power devices. The parasitic capacitors of MOSFET are charged and discharged by the coupled inductor and the energy is released in the new loop; therefore, the bridge peak current is diminished. The time-domain model of transient-state analyses is given in detail. The current spike of the main switch is clamped efficiently. By increasing switching frequency, the volume of the magnetic core can be further reduced which is resulted from reduction in the reverse recovery current in parasitic diode. Because of the suppression of the spike current via the device, the switch-on loss of the power loss is reduced, and low on-state resistor of the power device can be adopted to suppress the conduction loss. The proposed approaches are validated with experimental results.     

PWM驱动电机系统传导干扰等效电路模型

采用脉宽调制技术（PWM）驱动的电机系统通过功率变换器对电能进行变换和控制,使得电机系统的性能指标得到较大提高。但是由于功率变换器中的电力电子器件工作在开关状态,具有较大电压和电流变化率的功率脉冲信号产生很强的电磁干扰,对电机系统自身和周围环境产生很大影响。本文针对PWM变频器产生的电磁兼容问题,首先分析了PWM驱动电...     

A low-inductance line-frequency commutated rectifier complying with EN 61000-3-2 standards

This paper presents a high power factor rectifier, based on a modified conventional rectifier with passive L-C filter, which utilizes a line-frequency-commutated switch and a small auxiliary circuit in order to improve both harmonic content of the input current and power factor, thus allowing compliance with EN 61000-3-2 European standards. Being the switch turned on and off only twice per line period, the associated losses are very small. Moreover the limited di/dt and dv/dt considerably reduce the high-frequency noise emission, thus avoiding heavy EMI filters. The switch operation results in a boost action, which compensates for the filter inductor voltage drop, thus providing output voltage stabilization against load variations. Compared with other similar approaches, the presented topology can achieve higher power levels with a reasonable overall magnetic component size.     

Resonant snubber-based soft-switching inverters for electricpropulsion drives

This paper summarizes recently developed soft-switching inverters and proposes two possible options for electric propulsion motor drive applications. The newly developed soft-switching inverter employs an auxiliary switch and a resonant inductor per phase to produce a zero voltage across the main switch, so that the main switch can turn-on at the zero-voltage condition. Both the auxiliary switch and the resonant inductor are operating at a fractional duty and, thus, are small in size as compared to the main inverter circuit components. Operation modes in a complete zero-voltage switching cycle for the single-phase soft-switching inverter are described in detail, with graphical explanations. The circuit operation was first verified by a computer simulation, and then further tested with a 1 kW single-phase and a 100 kW three-phase inverter. Both simulation and experimental results are presented to show the superior performance in efficiency improvement, EMI reduction and dv/dt reduction of the proposed soft-switching inverters     

A passive soft-switching snubber for PWM inverters

This paper presents a regenerative passive snubber circuit for pulse-width modulation (PWM) inverters to achieve soft-switching purposes without significant cost and reliability penalties. This passive soft-switching snubber (PSSS) employs a diode/capacitor snubber circuit for each switching device in an inverter to provide low dv/dt and low switching losses to the device. The PSSS further uses a transformer-based energy regenerative circuit to recover the energy captured in the snubber capacitors. All components in the PSSS circuit are passive, thus leading to reliable and low-cost advantages over those soft-switching schemes relying on additional active switches. The snubber has been incorporated into a 150 kVA PWM inverter. Simulation and experimental results are given to demonstrate the validity and features of the snubber circuit.