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采用混合搅拌方法制备膨胀石墨(EG)/石蜡复合相变材料,测试分析了EG含量、施加电压与EG/石蜡复合相变材料体积电阻率的关系,研究了直接自发热和正温度系数(PTC)电阻发热时复合相变蓄热单元的发热特性。结果表明,随着EG含量或施加电压的增大,复合相变材料体积电阻率逐渐减小;施加电压对样品体积电阻率的影响与复合相变材料中EG含量有关,EG含量越高,施加电压对复合相变材料体积电阻率的影响越明显。当施加电压为4.0V时,EG质量分数分别为4%、5%、8%的复合相变材料体积电阻率分别只有0.5V时的0.481倍、0.185倍、0.068倍。基于复合相变材料导电特性,直接负载电压可实现复合相变材料电热转化和相变蓄热;结合PTC电阻发热可灵活控制复合相变蓄热单元加热功率,实现其快速充热。 相似文献
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采用硅烷偶联剂 KH560对碳纤维(CF)进行了处理,并探讨了 CF 含量对 PE-HD/CF 以及 PE-HD/EVA/CF复合材料导电性能的影响。结果表明,随着 CF 含量的增加,PE-HD/CF 体系的体积电阻率从6.16×10~(14)Ω·cm 下降到1.54×10~7Ω·cm,表面电阻率从2.59×10~(16)Ω下降到5.74×10~9Ω;而 PE-HD/EVA/CF 复合体系中体积电阻率从1.91×10~(13)Ω·cm 下降到3.27×10~8Ω·cm,表面电阻率从5.72×10~(15)Ω下降到6.18×10~8Ω,表明加入 EVA 有利于提高复合体系的导电性能。当 CF 含量为5份时,复合材料的体积电阻率达到最小值。研究还表明,随着 CF 含量的增加,CF 沿着外力方向出现很明显的取向,沿着 CF 取向方向材料的体积电阻率和表面电阻率均有所下降。 相似文献
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铁粉/聚丙烯复合材料的电磁屏蔽性能 总被引:1,自引:1,他引:0
研究铁粉含量、粒度及偶联剂对铁粉/PP复合材料导电性和电磁屏蔽性能的影响.结果表明:铁粉/PP复合材料的体积电阻率随铁粉质量含量的增加而降低,在20%时出现渗滤值,当铁粉质量含量超过30%之后,继续增大铁粉含量复合材料的体积电阻率和屏蔽效能变化不明显.铁粉含量一定时,随着铁粉目数增大,复合材料的屏蔽效能有所提高;在100MHz~1 GHz低频区域,复合材料最大电磁屏蔽效能达到了40dB.钛酸酯偶联剂为铁粉质量的4%时,能很好地改善铁粉/PP材料的导电性和屏蔽性能. 相似文献
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采用模板诱导法和模压成型法制备了高分子型抗静电剂聚丙烯接枝苯乙烯磺酸共聚物-聚苯胺(PP-g-SPS-PANI)和抗静电聚丙烯(PP)材料,考察了盐酸用量、过硫酸铵/苯胺(APS/AN)物质的量比、原料磺化度等因素对抗静电剂产率和抗静电PP材料体积电阻率的影响.结果表明:抗静电PP材料的体积电阻率比PP降低了5个数量级;在一定范围内,增加盐酸用量和APS/AN物质的量比可提高抗静电剂产率和降低抗静电PP的体积电阻率;随着原料磺化度的提高,样品体积电阻率逐渐降低;随着样品中抗静电剂含量的提高,样品体积电阻率不断下降,但当抗静电剂质量分数超过10%后,电阻率变化不大. 相似文献
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《塑料工业》2016,(2)
以导电炭黑(CB)为填料,高密度聚乙烯(HDPE)和超高摩尔质量聚乙烯(UHMWPE)为基体,通过超声溶液分散法制备了CB/HDPE/UHMWPE复合材料,并研究了CB含量对复合材料体积电阻率和阻-温特性的影响。研究发现,当HDPE∶UHMWPE质量比为7∶3,CB含量在5%左右时,CB/HDPE/UHMWPE复合材料能够形成完善的导电网络,材料具有较好的电性能;材料的体积电阻率随着温度的升高变大,在熔点附近时剧增,且材料的正温度效应(PTC)强度在CB含量大于渗流阈值的范围内,随着CB含量的增加而逐渐减小。通过多次对复合材料进行热循环测试发现CB/HDPE/UHMWPE复合材料具有良好的热稳定性。 相似文献
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掺杂对BaTiO3基PTC陶瓷材料性能的影响 总被引:2,自引:0,他引:2
概述了BaTiO3基PTC陶瓷半导化的掺杂种类和机理,综述了掺杂物的添加量和加入方式对BaTiO3基PTC陶瓷材料性能的影响,并展望了其发展趋势。通常BaTiO3陶瓷的电阻率在开始时都随施主掺杂浓度的增加而降低,当施主掺杂浓度达到某一值时,电阻率降至最低,而后随着施主掺杂浓度的提高,电阻率则迅速上升。随着受主掺杂含量的增加,材料的室温电阻率和升阻比逐渐增大,PTC性能逐步提高,当含量超过某一值时,升阻比又呈降低趋势,PTC效应有所降低,室温电阻率依然增大。由于各掺杂物的优缺点不同,近几年研究发现,双施主掺杂和施受主共掺能够很好的改善材料的性能。 相似文献
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Gd_2O_3掺杂对BaTiO_3陶瓷电性能的影响 总被引:2,自引:0,他引:2
采用溶胶-凝胶法制备了掺杂不同量Gd2O3(分别为0 001、0 002、0 003、0 005、0 007mol mol)的BaTiO3陶瓷,并对其电性能进行了研究。结果表明:Gd2O3掺杂使BaTiO3陶瓷的电阻率明显下降,当添加量为0 002mol mol时,电阻率最小,为1 27×105Ω·m;晶粒电阻随着温度的变化,呈现NTC效应,而晶界电阻随着温度的变化,呈现PTC效应,而且晶界电阻远远大于晶粒电阻,说明Gd2O3掺杂BaTiO3陶瓷的PTC效应是一种晶界效应;Gd2O3掺杂使BaTiO3陶瓷的介电常数和介电损耗在低频时明显增大,在高频时又明显降低。 相似文献
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《Journal of the European Ceramic Society》2002,22(13):2143-2148
In the present work, the effects of the additives (BN, Y2O3+Nb2O5, Sb2O3+Nb2O5, and Cr) on the electrical properties of (Ba0.92Sr0.08)TiO3-based positive temperature coefficient resistor (PTCR) were investigated. It was noted that the addition of BN lowered the sintering temperature of the material system studied. A proper amount of BN could enhance the PTC effect, but the room-temperature resistivity would increase with increasing the content of BN. The addition of double donor Sb2O3+Nb2O5 could lead to a lower room-temperature resistivity than that of Y2O3+Nb2O5. Metal Cr was also added to further reduce the resistivity. The low room-temperature resistivity and PTC behavior was achieved by controlling both the metallic Cr content and the process of reducing sintering and oxidation treatment. 相似文献
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K. A. HU DAWNE MOFFATT JAMES RUNT AHMAD SAFARI ROBERT NEWNHAM 《Journal of the American Ceramic Society》1987,70(8):583-585
V2 O3 was incorporated into polymer matrices to produce composite materials with low room-temperature resistivities and sizable positive temperature coefficient (PTC) resistance effects. In addition, a negative temperature coefficient effect, associated with the semiconductor-to-metal phase transition in V2 O3 , was also observed. The resistivity vs temperature curve for these composites resembles a square well with three temperature regimes in which the composite behaves like a semiconductor, a metal, and an insulator. The intensity of the PTC effect for these composites was found to be as large as 10 orders of magnitude. 相似文献
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Felipe Gutierrez-Mora Jules L. Routbort 《Journal of the American Ceramic Society》2002,85(9):2370-2372
Pieces of saw-cut La0.85 Sr0.15 MnO3 were joined at 1150° and 1250°C under a compressive stress. The strains to form the joints were ∼0.1. Joints formed by plastic deformation were examined using scanning electron microscopy, and they were indistinguishable from the bulk. The room-temperature direct-current resistivity of the joined pieces was identical to that measured in the bulk material. This indicated that a sound, electrically conducting joint could be formed using plastic deformation (grain-boundary sliding) with little surface preparation. 相似文献
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Senlin Leng Guorong Li Liaoying Zheng Tianbao Wang Qingrui Yin 《Journal of the American Ceramic Society》2009,92(11):2772-2775
As a lead-free positive temperature coefficient of resistivity (PTCR) material, (1– x mol%) BaTiO3 – x mol% (Bi1/2 K1/2 ) TiO3 – y mol% Y2 O3 –0.5 mol% TiO2 (BT– x BKT–2 y Y–0.5TiO2 ) systems were prepared by the conventional solid-state reaction method. All samples containing <2 mol% BKT sintered in air possessed relatively low room-temperature resistivity (ρ25 ) and high positive temperature coefficient (PTC) effect. However, when the BKT content exceeded 2 mol%, the sample was not semiconductive after sintering in air. The effects of sintering schedule on the properties of PTCR ceramics were discussed. The results showed that the optimum composition of BT–1BKT–0.2Y–0.5TiO2 , sintered at 1330°C for not-soaking and then fast quenched in air, achieved rather low ρ25 of 28 Ω·cm and a high jump of resistivity (maximum resistivity [ρmax ]/minimum resistivity [ρmin ]) of 4.0 orders of magnitude with T c about 155°C. The ρ25 of the as-sintered sample could be further reduced to about 10 Ω·cm by annealing in N2 at 450°C for 30 min, accompanied decrease on the PTC effect. 相似文献
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施、受主掺杂对高居里点BaTiO3基PTCR陶瓷材料性能的影响 总被引:1,自引:0,他引:1
以合成的(Ba_(0.6)Pb_(0.4))TO_3为主要原料,通过电性能测试、SEM、XRD等手段分析研究了施主Nb~(5 )掺杂以及施主Nb~(5 )、受主Mn~(2 )共掺对高居里点BaTiO_3基PTCR陶瓷材料性能的影响。结果表明,施受主掺杂不影响材料基体的晶体结构,适量的施主Nb~(5 )掺杂可降低材料的室温电阻率从而改善其性能,受主Mn~(2 )掺杂提高了施主Nb~(5 )掺杂的高居里点BaTiO_3基PTCR陶瓷材料的室温电阻率且只有极少量的Mn~(2 )掺杂才使材料的PTC效应稍有提高。 相似文献