酸性氯化铜蚀刻液与碱性氯化铜蚀刻液比较

本文针对酸性氯化铜蚀刻液与碱性氯化铜蚀刻液的组成本性计算方面作一简单的对比,为业界同仁提供一 个参考方向,对新手或行外人士以启迪,有事半功倍之受用。     

酸性氯化铜蚀刻液与碱性氯化铜蚀刻液比较

本针对酸性氯化铜蚀刻液与碱性氯化铜蚀刻液的组成，本性，计算方面作一简单的对比，为业界同仁提供一个参考方向，对新手或行外人士以启迪，有事半功倍之受用。     

印制板碱性氯化铜蚀刻液的作用及控制

介绍了印制板蚀刻液各成分和条件对蚀刻过程影响的试验情况，提出了控制蚀刻成分和蚀刻条件的简便方法。     

微带蚀刻工艺影响因素探讨

本文阐述了在微带精密蚀刻过程中影响蚀刻速率变化的诸多因素,探讨了酸性氯化铜蚀刻液工艺控制应该注意的问题和解决办法。     

以（NH4）2S2O8为主蚀刻剂的印制板蚀刻液浅谈

文章探讨了对以（NH4）2S2O8为主蚀刻剂的新印制板蚀刻液及腐蚀工艺。利用优化实验方法,验证了以银盐代替汞盐做催化剂的可能性,以及催化剂、温度、时间、酸度等因素对腐蚀速度的影响,获得了以银盐代替汞盐为催化剂、以（NH4）2S2O8为主蚀刻剂的新印制板蚀刻液的新配方和新的蚀刻工艺条件。     

碱性蚀刻液影响PCB蚀刻速率的因素研究

采用正交试验方法,研究了碱性氯化铜蚀刻液中（Cu2＋）、（Cl-）、pH值、及蚀刻液温度对铜箔蚀刻速率的影响规律.结果表明：在因素水平范围内,对蚀刻速率影响的大小顺序为蚀刻液温度〉Cu2＋浓度〉pH值〉Cl-浓度,最佳蚀刻工艺条件为（Cu2＋）=100g/L,（Cl-）=120g/L,pH=8.5,T=50℃,静态蚀刻速率可达8.76mm/min.     

碱性蚀刻技术

化学基本原理 碱性蚀刻的基本机理就是碱性氯化铜化学反应（见图1）是二价铜离子氧化金属铜生成亚铜离子。这种平衡同样在酸性氯化铜中的二价铜氧化浸蚀铜金属。所以，在碱性环境条件下，发生亚铜离子和二价铜离子的氨的络合物。更进一步利用通入空气使酸性氯化铜蚀刻液中亚铜离子氧化成二价铜离子。如下反应：     

氨碱性蚀刻和再生体系

概述了硫酸铜氨蚀刻剂的蚀刻和再生回收体系,优于传统的氯化铜铵蚀刻剂,具有显著的经济利益和环境效益。     

酸性CuCl2蚀刻液动态蚀刻均匀性与蚀刻速率研究

对酸性CuCl2蚀刻液在HCl/H2O2和HCl/NH4Cl两种体系下进行了水平动态蚀刻研究,分别对蚀刻均匀性和蚀刻速率进行了分析,结果表明面铜粗糙度和上下喷淋对蚀刻均匀性有很大影响,HCl/NH4Cl系统相对于HCl/H2O2系统具有更高的蚀刻速率,为工业生产提供相关的数据参考。     

浅谈碱性蚀刻和丝网印刷

一 碱性蚀刻： 碱性蚀刻的基本机理就是碱性氯化铜化学反应。是二价铜离子氧化金属铜生成亚铜离子。这种平衡同样在酸性氯化铜中的二价铜氧化浸蚀铜金属。所以在碱性环境条件下。发生亚铜离子和二价铜离子的氨的络合物。更进一步利用通人空气使酸性氧化铜蚀刻液中亚铜离子氧化成二价铜离子。     

碱性蚀刻废液再生方法评述

碱性蚀刻废液是一种铜含量高、废液浓度高的工业废水,将其再生具有较高的经济价值和环境效益。文章综述了碱性蚀刻废液的污染危害,全面介绍了碱性蚀刻废液的再生方法,指出了碱性蚀刻液再生的发展方向。     

PCB铜蚀刻废液的治理概述

概述了PCB铜蚀刻废液的传统治理方法并对其防治效果进行了分析。此外,介绍了一种新型治理技术——铜蚀刻废液的循环再生技术。     

微电子制造中Ti的湿法蚀刻

综述了微电子制造工艺中Ti的湿法蚀刻的发展过程,指出了传统Ti蚀刻液的缺点;介绍了最新研究改良后的多种Ti蚀刻液配方和化学药品、废气、废液对人员环境的影响.     

HgCdTe外延材料的缺陷腐蚀特性

通过对Schaake和Chen腐蚀剂在HgCdTe外延材料(111)B面腐蚀坑特性的研究,揭示了HgCdTe液相外延材料中的缺陷特征及其密度分布规律.深度腐蚀实验显示外延材料中确实存在着通常认为的具有定向穿越特性的穿越位错.将两种腐蚀剂作用于同一样品后发现,Schaake和Chen腐蚀剂形成的具有穿越特性的腐蚀坑有一一对应的关系.除了穿越位错外,在两种腐蚀方法揭示出的腐蚀坑中都还存在着一种不具备穿越特性的腐蚀坑,两者在密度分布以及界面处密度增值方面具有相同的特性,但前者在宏观缺陷附近密度出现明显的增值,而后者则没有出现类似的现象.     

Comparative Study of HgCdTe Etchants: An Electrical Characterization

A comparative study of wet etchants for both molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE) grown n- and p-type samples was performed using capacitance–voltage (C–V) characteristics and surface recombination velocity (SRV) extracted from photoconductive decay (PCD) measurements. Different wet etchants were divided in two categories, (i) where bromine is a direct reagent in the etching solution and (ii) where bromine is a byproduct after reaction among different reagents. Negative shift of the flat-band voltages were observed for both n- and p-type samples treated with second category of etchants. A decrease in minority carrier lifetimes and an increase in the surface recombination velocities were also observed for the n-type samples treated with second category of etchants.     

Dielectric isolation techniques for integrated circuits

There has been an increasing interest in producing dielectrically isolated integrated circuits over the past five years for both bipolar and MOS. This impetus stems from the potential of such a technique to increase the operational speed of the circuit, particularly CMOS by reduction of the stray capacitance and a need to reduce the susceptibility of monolithic circuits to photocurrents generated by radiation in space and military environments. In general, early methods for producing dielectrically isolated circuits involved relatively costly lapping and polishing techniques which were generally low yield processes or the development of a completely new process e.g. silicon on sapphire. Recently, preferential anisotropic silicon etchants which may eliminate the mechanical process steps have been announced, as well as the possibility of ion implantation of heavy doses of nitrogen or oxygen at relatively high energies to produce the buried dielectric layer. These new processes will be compared with more traditional methods.     

Rational Cathode Design for High-Power Sodium-Metal Chloride Batteries

The transition from fossil fuels to renewable energy sources requires economic, high-performance electrochemical energy storage. High-temperature sodium-metal chloride batteries combine long cycle and calendar life, with high specific energy, no self-discharge, and minimum maintenance requirements, while employing abundant raw materials. However, large-scale deployment in mobility and stationary storage applications is currently hindered by high production cost of the complex, commercial tubular cells and limited rate capability. The present study introduces sodium-metal chloride cells with a simple, planar architecture that provide high specific power while maintaining the inherent high specific energy. Rational cathode design, considering critical transport processes and the effect of cathode composition on the cell resistance, enables the development of high-performance cells with average discharge power of 1022 W kg⁻¹ and discharge energy per cycle of 258 Wh kg⁻¹ on cathode composite level, shown over 140 cycles at an areal capacity of 50 mAh cm⁻². This corresponds to a 3.2C discharge over 80% of full charge. Compared to the best performing planar sodium-metal chloride cells with similar cycling stability and mass loading in the literature, the presented performance represents an increase in specific power by more than a factor of four, while also raising the specific energy by 74%.     

Effect of Atmosphere on n -Type Hg1– x Cd x Te Surface after Different Wet Etching Treatments: An Electrical and Structural Study

The impact on surface recombination velocity (SRV) and minority carrier lifetime of three wet etchants are examined here. The etchants are 60DI +  10HBr + 1H₂O₂ (by volume), 1% bromine–methanol, and 2% bromine–lactic acid. After initial etching, the HgCdTe surfaces were exposed in specific time steps to the atmosphere. At each step in the process, the effect of each etchant and of exposure to atmosphere was determined by photoconductive decay (PCD) measurements as well as by x-ray photoelectron spectroscopy (XPS). The PCD results showed that the 60DI + 10HBr + 1H₂O₂ etchant, after exposure to atmosphere, led to a relatively small change in SRV compared to the changes that occurred for the two bromine-based etchants. In addition, XPS measurements showed that there were no neutral tellurium inclusions in the case of 60DI + 10HBr + 1H₂O₂ and that TeO₂ formed strictly out of tellurium bonded to HgCdTe. Moreover, TeO₂ formed at a much slower rate on surfaces etched with HBr compared with those etched with the bromine-based etchants. A model is proposed in terms of band alignment at HgCdTe-Te⁰ and HgCdTe-TeO₂ interfaces to explain the different surface recombination mechanisms that are due to different etchants and to atmospheric exposure.     

Minimizing Silver-Silver Chloride Electrode Impedance

We sought to minimize silver-silver chloride electrode impedance by chemical treatment. Chloriding pure silver electrodes lowered the impedance, as noted by Geddes [1]. Immersing the chlorided electrodes in photographic developer lowered the impedance further, as noted by Marmont [2]. A second layer of silver chloride did not result in any further reduction in impedance, as hypothesized.