Large-signal characterizations of DDR IMPATT devices based on group III-V semiconductors at millimeter-wave and terahertz frequencies

Large-signal (L-S) characterizations of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on group III-V semiconductors such as wurtzite (Wz) GaN, GaAs and InP have been carried out at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation (NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials (i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.     

Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

The authors have carried out the large-signal characterization of silicon-based double-drift region(DDR) impact avalanche transit time(IMPATT) devices designed to operate up to 0.5 THz using a large-signal simulation method developed by the authors based on non-sinusoidal voltage excitation.The effect of band-to-band tunneling as well as parasitic series resistance on the large-signal properties of DDR Si IMPATTs have also been studied at different mm-wave and THz frequencies.Large-signal simulation results show that DDR Si IMPATT is capable of delivering peak RF power of 633.69mW with 7.95% conversion efficiency at 94GHz for 50% voltage modulation,whereas peak RF power output and efficiency fall to 81.08 mW and 2.01% respectively at 0.5 THz for same voltage modulation.The simulation results are compared with the experimental results and are found to be in close agreement.     

Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies

Large-signal （L-S） characterizations of double-drift region （DDR） impact avalanche transit time （IM- PATT） devices based on group III-V semiconductors such as wurtzite （Wz） GaN, GaAs and InP have been carried out at both millimeter-wave （mm-wave） and terahertz （THz） frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation （NSVE） model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A compara- tive study of the devices based on conventional semiconductor materials （i.e. GaAs, InP and Si） with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.     

Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system

Simulation studies are made on the large-signal RF performance and avalanche noise properties of heterojunction double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on Al_xGa_1-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al_0.4Ga_0.6N/p-GaN and n-GaN/p-Al_0.4Ga_0.6N are proposed in this study. The large-signal output power, conversion efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al_0.4Ga_0.6N. The results show that the n-Al_0.4Ga_0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al_0.4Ga_0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al_0.4Ga_0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.     

基于合成技术的毫米波太赫兹固态功放研究进展

随着下一代通信和装备向着更大带宽和更高精确度的方向发展,毫米波太赫兹频段成为微波技术研究的重点方向。发射功率是太赫兹系统中的关键指标,功率的大小直接决定了系统的作用距离。近些年来,毫米波太赫兹频段的固态功率器件取得了显著进步,推动了国内外太赫兹固态功率放大器的工程实现。本文介绍了国际上毫米波太赫兹频段功率合成技术和固态功放的研究现状,以及我国特别是南京电子器件研究所在W波段与G波段基于径向功率合成技术、矩形波导合成技术以及硅基波导合成技术的固态功放模组的最新研究进展。     

毫米波器件与电路技术

阐述了近来毫米波器件及电路的技术动向。异质结FET和HBT在InP系突现出优越的性能,在GaAs系已完全进入系统应用阶段。在此应用观点的影响下,相继开发成功了宽带无线通信系统和车载雷达用的CPWMMIC芯片以及倒装片封装模块。     

Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

The influence of self-heating on the millimeter-wave (mm-wave) and terahertz (THz) performance of double-drift region (DDR) impact avalanche transit time (IMPATT) sources based on silicon (Si) has been investigated in this paper. The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited (NSVE) large-signal simulation technique developed by the authors, which is based on the quantum-corrected drift-diffusion (QCDD) model. Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed. Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques, which will be highly useful for optimizing the thermal design of the oscillators. Finally, the simulated results are found to be in close agreement with the experimentally measured data.     

Electrical characterization of semiconducting diamond thin films and single crystals

Naturally occurring semiconducting single crystal (type IIb) diamonds and boron doped polycrystalline thin films were characterized by differential capacitance-voltage and Hall effect measurements, as well as secondary ion mass spectroscopy (SIMS). Results for natural diamonds indicated that the average compensation for a type IIb diamond was >17%. Mobilities for the natural crystals varied between 130 and 564 cm²/V·s at room temperature. The uncompensated dopant concentration obtained by C-V measurements (2.8 ± 0.1 × 10¹⁶ cm⁻³) was consistent with the atomic B concentration measured by SIMS performed on similar samples (3.0 ± 1.5 x 10¹⁶ cm⁻³). Measurement of barrier heights for three different metals (platinum, gold, and aluminum) found essentially the same value of 2.3 ± 0.1 eV in each case, indicating that the Fermi level was pinned at the diamond surface. Polycrystalline semiconducting diamond thin films demonstrated a complex carrier concentration behavior as a function of dopant density. This behavior may be understood in terms of a grain boundary model previously developed for polycrystalline silicon, or by considering a combination of compensation and impurity band conduction effects. The highest mobility measured for a polycrystalline sample was 10 cm²/V·s, indicating that electrical transport in the polycrystalline material was significantly degraded relative to the single crystal samples.     

强磁场下氮掺杂金刚石中法拉第旋转效应的偏振太赫兹时域光谱测量

氮掺杂金刚石（N-D）是最重要的碳基电子材料之一,由于氮相关色心的存在,其具有许多有趣而独特的物理特征。文章中研究了等离子体化学气相沉积法生长的N-D样品的太赫兹（THz）磁光特性。应用偏振THz时域光谱（THz TDS）技术,在0~8 T磁场和80 K温度条件下,测量了N-D样品在法拉第几何结构下的THz透射光谱,得到了N-D材料的法拉第旋转角和椭偏率、复横向（或霍尔）磁光电导率以及复左、右旋介电常数随磁场的变化规律。结果表明,N-D材料具有优良的THz磁光法拉第旋光效应,可应用于THz旋光器件。     

高功率MPCVD金刚石膜红外光学材料制备

使用自行研制的椭球谐振腔式MPCVD装置,以H2-CH4为气源,就高功率条件下CH4浓度对金刚石膜的生长速率和品质的影响规律进行了研究,并在此基础上进行了大面积光学级金刚石膜的沉积。利用扫描电镜、激光拉曼谱仪、傅里叶红外光谱仪对金刚石膜的表面和断口形貌、金刚石膜的品质、红外透过率等进行了表征。实验结果表明,使用自行设计建造的椭球谐振腔式MPCVD装置在高功率条件下通过提高CH4浓度会使金刚石膜的生长速率增加,但当CH4浓度达到一定比例后,金刚石膜的生长速率将不再继续提高。CH4浓度在0.5%~2%时制备的金刚石膜品质较高;自行设计建造的椭球谐振腔式MPCVD装置能够满足在较高功率下光学级金刚石膜的快速沉积要求。     

太赫兹宽频带准全向平板超材料吸波体的设计

在太赫兹波段设计了一种宽频带准全向的平板超材料吸波体.仿真结果表明,该吸波体在4.36～4.91THz之间具有极化不敏感和宽入射角的强吸收.提取的等效阻抗实部表明,可以通过调节超材料的电磁响应造成吸波体一侧与自由空间近似阻抗匹配、另一侧与自由空间阻抗不匹配,从而在吸收频带内同时实现反射率和传输率最小、吸收率最大.仿真的...     

从光子学角度看太赫兹技术的现状和发展趋势

太赫兹技术是当前极具发展潜力的热点技术。太赫兹源、太赫兹探测器以及太赫兹应用研究是太赫兹技术的三大研究重点。本文分析了太赫兹技术在光谱探测、成像探测和通讯应用方面的需求情况,介绍了现有主要的太赫兹源产生方法和特点,以及太赫兹探测器的分类和常见太赫兹探测器,并以其相邻谱段红外探测器的发展历程以及太赫兹探测器的发展现状为参照,从光子学的角度分析了太赫兹探测器的发展趋势以及可能面临的技术困难。     

太赫兹频段星地通信信道建模与仿真

太赫兹频段作为至今尚未被完全开发的超高通信频段,具有超大带宽等优点,将其应用于第五代（the 5th Generation,5G）、后五代（Beyond 5G,B5G）移动通信系统,除实现更高速率传输外,还可实现地面移动网络与卫星网络频谱资源的共享,有利于推动新一代空天地一体化通信网络建设.文章提出了一种适用于星地通信系统的太赫兹信道建模与仿真方法,分析了自由空间损耗、分子吸收损耗、云雾衰减、雨衰减及多普勒频移等太赫兹信道的影响因素,构建了星地太赫兹通信信道建模流程,并给出了分步骤信道参数的生成方法.通过数值仿真,对不同天气状况下传输距离和频率对传输信号的影响进行了分析,并基于所生成的信道响应对误码率进行评估,从而验证了所提出模型和方法的可用性.所提建模方法能够提供不同传输条件下的动态太赫兹信道响应数据,从而为今后太赫兹频段无线通信系统的设计与开发提供评估与测试依据.     

室内单载波太赫兹无线信号传播及覆盖性能分析

针对太赫兹无线信号与传统频谱的差异性制约其应用于室内通信场景的问题,提出了一种室内太赫兹无线信号传播的修正模型,并分析了宽带单载波太赫兹无线信号传播及覆盖性能.具体地,考虑障碍物厚度导致的吸收损耗问题,建立了宽带太赫兹信道传递函数模型.基于射线追踪技术,阐明了障碍物厚度、信号带宽对上述性能的影响.研究表明,非视距障碍物...     

激光在线修整青铜金刚石砂轮数值仿真与试验

为了研究声光调Q YAG脉冲激光在线修整青铜结合剂金刚石砂轮,采用数值仿真和试验相结合的方法,在考虑金刚石石墨化过程的基础上,通过有限元数值模拟的方法建立了3维单脉冲激光烧蚀金刚石磨粒的数学模型和传热模型,研究了脉冲激光参量(离焦量、脉宽和激光功率)对金刚石磨粒去除厚度的影响规律,为激光修整参量选择提供了指导。结果表明,激光功率、脉宽和离焦量是影响脉冲激光金刚石磨粒去除厚度的最直接的因素,金刚石磨粒去除厚度随着激光功率的增加而变大;随着脉宽的增加而减少;随着离焦量的增加而减少。借助CCD和激光三角位移测量仪对砂轮表面跳动进行在线监测、采用闭环控制系统控制Q开关,实现了砂轮的在线修整,获得了良好的地形地貌,降低了砂轮圆跳动度误差,达到良好的修整效果。     

太赫兹频段OFDM一体化波形的雷达探测性能分析

传统的正交频分复用(OFDM)信号在太赫兹通信系统中通常会面临峰均功率比(PAPR)过高的问题,严重降低功率放大器的效率,恶化太赫兹链路的非线性效应。恒模雷达-通信一体化波形可以抑制PAPR的影响。本文采用模糊函数作为评价标准,从距离和速度两方面分析和比较了太赫兹频段正交频分复用-16阶正交幅相调制-线调频(OFDM-16QAM-LFM)、正交频分复用-二进制相移键控-线调频(OFDM-BPSK-LFM)、正交频分复用-最小相移键控-线调频(OFDM-MSK-LFM)3种OFDM一体化波形的雷达探测性能。数值仿真结果表明,OFDM-16QAM-LFM波形在太赫兹频段的距离和速度探测性能良好,但PAPR过高;OFDM-BPSK-LFM、OFDM-MSK-LFM波形采用相位调制代替幅度-相位调制,保持恒定包络特性;OFDM-BPSK-LFM一体化波形的距离分辨力不会随着子载波数量增加而恶化,但速度分辨力随着子载波数量的增加而受到很大影响,不适宜用于高速运动状态下多目标的速度检测;OFDM-MSK-LFM波形可承载更多的子载波,适应复杂场景下的多载波雷达探测需求。本文方法为不同应用场景的一体化波形选择提供了参考。     

二硝基苯甲酸同分异构体的太赫兹与红外光谱特性

利用太赫兹时域光谱系统(THz-TDS)和傅里叶变换红外光谱仪(FTIR)分别研究了2,4-, 2,5-, 3,4-, 3,5-二硝基苯甲酸的吸收谱.实验结果表明, 4种同分异构体的吸收光谱在红外波段(1 400~1 800 cm-1)表现出相似性, 而在太赫兹波段(0.3~2.2 THz)却存在非常明显的区别.利用密度泛函理论(DFT)对4种物质的吸收频谱进行计算, 并根据计算结果对吸收光谱的相似性和差异性进行解释.太赫兹时域光谱技术为鉴别物质的同分异构体提供了一种可行的手段.     

收发异源FMCW太赫兹系统误差分析

近年来,随着太赫兹器件研究不断取得进展,对太赫兹收发前端的研究逐渐增多。随着工作频率的增加,以及带宽的增大,由器件非理想性能带来的误差成为影响太赫兹系统性能的重要因素。基于一个采用二级混频设计的收发异源调频连续波太赫兹系统,研究分析了时钟同步误差、调频非线性误差以及IQ不平衡问题所带来的误差。通过对3种误差的建模分析,为后续对误差进行消除和补偿提供了良好的理论基础。     

菱形NiFe薄膜单元的自发磁化及剩磁状态的研究

利用微磁学方法系统研究了纳米尺度的NiFe薄膜菱形单元的自发磁化状态及剩磁状态。研究结果表明,在不同的尺寸下,菱形单元将有不同的自发磁化状态及剩磁状态。在单元的长宽尺寸小于某个临界尺寸时,菱形单元结构呈现单畴态。同时还分析了菱形NiFe单元作为磁性随机存储器(MRAM)存储单元时的要求。     

Preparation and properties of the composite material silicon/polypyrrole–copper for electronic devices applications

The paper presents the results of the elaboration of new composites materials (Si/PPy–Cu) by incorporation of copper in polypyrrole films. Polymer films have been deposited on silicon electrode surfaces by electrochemical oxidation of the monomer in an organic solution. The incorporation of copper particles in the polymer film has first been conducted by the immersion of the modified electrode in a copper solution, thereafter; it has been reduced electrochemically in an aqueous solution to disperse metallic particles in the polymer film. The results obtained from cyclic voltammetry and impedance spectroscopy of the films before and after copper incorporation show differences in the electrochemical behavior of the modified films which suggest that Cu particles have been incorporated in the polymer. This has also been confirmed by the electrical resistivity, XRD, SEM and EDX measurements. For a possible application, current–voltage characteristics of the heterostructure devices (Si/PPy–Cu) have indicated a diode behavior similar of power semiconductor diodes.