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Self‐powered photodetectors (PDs) have long been realized by utilizing photovoltaic effect and their performances can be effectively enhanced by introducing the piezo‐phototronic effect. Recently, a novel pyro‐phototronic effect is invented as an alternative approach for performance enhancement of self‐powered PDs. Here, a self‐powered organic/inorganic PD is demonstrated and the influences of externally applied strain on the pyro‐phototronic and the photovoltaic effects are thoroughly investigated. Under 325 nm 2.30 mW cm‐2 UV illumination and at a ‐0.45% compressive strain, the PD's photocurrent is dramatically enhanced from ≈14.5 to ≈103 nA by combining the pyro‐phototronic and piezo‐phototronic effects together, showing a significant improvement of over 600%. Theoretical simulations have been carried out via the finite element method to propose the underlying working mechanism. Moreover, the pyro‐phototronic effect can be introduced by applying a ‐0.45% compressive strain to greatly enhance the PD's response to 442 nm illumination, including photocurrent, rise time, and fall time. This work provides in‐depth understandings about the pyro‐phototronic and the piezo‐phototronic effects on the performances of self‐powered PD to light sources with different wavelengths and indicates huge potential of these two effects in optoelectronic devices.  相似文献   

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A feasible, morphological influence on photoresponse behavior of ZnO microarchitectures such as microwire (MW), coral‐like microstrip (CMS), fibril‐like clustered microwire (F‐MW) grown by one‐step carrier gas/metal catalyst “free” vapor transport technique is reported. Among them, ZnO F‐MW exhibits higher photocurrent (IPh) response, i.e., IPh/ZnO F‐MW > IPh/ZnO CMS > IPh/ZnO MW. The unique structural alignment of ZnO F‐MW has enhanced the IPh from 14.2 to 186, 221, 290 µA upon various light intensities such as 0 to 6, 11, 17 mW cm?2 at λ405 nm. Herein, the nature of the as‐fabricated ZnO photodetector (PD) is also demonstrated modulated by tuning the inner crystals piezoelectric potential through the piezo‐phototronic effect. The IPh response of PD decreases monotonically by introducing compressive strain along the length of the device, which is due to the synergistic effect between the induced piezoelectric polarization and photogenerated charge carriers across the metal–semiconductor interface. The current behavior observed at the two interfaces acting as the source (S) and drain (D) is carefully investigated by analyzing the Schottky barrier heights (ΦSB). This work can pave the way for the development of geometrically modified strain induced performances of PD to promote next generation self‐powered optoelectronic integrated devices and switches.  相似文献   

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Organic light‐emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field‐effect transistors (OFETs) and the light‐generation capability of organic light‐emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state‐of‐the‐art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source‐drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.  相似文献   

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Conjugated polyelectrolytes comprise an electronically delocalized backbone with pendant groups bearing ionic functionalities. Important new developments regarding their use to improve charge injection from metallic electrodes into organic semiconductors, a key requirement in emissive devices, have recently appeared. This article provides an overview of recent studies concerning the basic properties of conjugated polyelectrolytes as a function of molecular structure, and of optoelectronic devices with conjugated polyelectrolytes as essential functional components. Processes where more insightful mechanistic understanding is needed and areas of opportunity are discussed.  相似文献   

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The emerging 2D semiconductors have aroused increasing attention due to their fascinating fundamental properties and application prospects. Technical investigation of 2D semiconductor–based electronics and optoelectronics is paving the way to realizing practical applications, which opens up new opportunities to reshape the current semiconductor industry. Particularly, 2D semiconductor–based optoelectronics can be extensively utilized in the promising semiconductor and information industries, such as solid‐state lighting, on‐chip optical interconnects, quantum computing, and communication. Here, the research progress regarding the fabrication and characterization of rapidly growing light‐emitting devices and photodetectors enabled by 2D semiconductors is reviewed. According to different emission mechanisms, 2D semiconductor–activated light sources are classified into four types: excitonic light‐emitting diodes (LEDs), quantum LEDs, valley LEDs, and lasers. Moreover, photodetecting devices based on atomically thin MoS2, other 2D semiconductors, and van der Waals heterostructures are discussed, where diverse device structures, performance parameters, and working principles are compared. Furthermore, the remaining challenges in the realization of practical devices with desirable features are outlined and new research opportunities for 2D semiconductor optoelectronics are proposed.  相似文献   

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Degradation in organic light‐emitting diodes (OLEDs) is a complex problem. Depending upon the materials and the device architectures used, the degradation mechanism can be very different. In this Progress Report, using examples in both small molecule and polymer OLEDs, the different degradation mechanisms in two types of devices are examined. Some of the extrinsic and intrinsic degradation mechanisms in OLEDs are reviewed, and recent work on degradation studies of both small‐molecule and polymer OLEDs is presented. For small‐molecule OLEDs, the operational degradation of exemplary fluorescent devices is dominated by chemical transformations in the vicinity of the recombination zone. The accumulation of degradation products results in coupled phenomena of luminance‐efficiency loss and operating‐voltage rise. For polymer OLEDs, it is shown how the charge‐transport and injection properties affect the device lifetime. Further, it is shown how the charge balance is controlled by interlayers at the anode contact, and their effects on the device lifetime are discussed.  相似文献   

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Degradation in organic light‐emitting diodes (OLEDs) is a complex problem. Depending upon the materials and the device architectures used, the degradation mechanism can be very different. In this Progress Report, using examples in both small molecule and polymer OLEDs, the different degradation mechanisms in two types of devices are examined. Some of the extrinsic and intrinsic degradation mechanisms in OLEDs are reviewed, and recent work on degradation studies of both small‐molecule and polymer OLEDs is presented. For small‐molecule OLEDs, the operational degradation of exemplary fluorescent devices is dominated by chemical transformations in the vicinity of the recombination zone. The accumulation of degradation products results in coupled phenomena of luminance‐efficiency loss and operating‐voltage rise. For polymer OLEDs, it is shown how the charge‐transport and injection properties affect the device lifetime. Further, it is shown how the charge balance is controlled by interlayers at the anode contact, and their effects on the device lifetime are discussed.  相似文献   

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We explore a strongly interacting QDs/Ag plasmonic coupling structure that enables multiple approaches to manipulate light emission from QDs. Group II–VI semiconductor QDs with unique surface states (SSs) impressively modify the plasmonic character of the contiguous Ag nanostructures whereby the localized plasmons (LPs) in the Ag nanostructures can effectively extract the non‐radiative SSs of the QDs to radiatively emit via SS–LP resonance. The SS–LP coupling is demonstrated to be readily tunable through surface‐state engineering both during QD synthesis and in the post‐synthesis stage. The combination of surface‐state engineering and band‐tailoring engineering allows us to precisely control the luminescence color of the QDs and enables the realization of white‐light emission with single‐size QDs. Being a versatile metal, the Ag in our optical device functions in multiple ways: as a support for the LPs, for optical reflection, and for electrical conduction. Two application examples of the QDs/Ag plasmon coupler for optical devices are given, an Ag microcavity + plasmon‐coupling structure and a new QD light‐emitting diode. The new QDs/Ag plasmon coupler opens exciting possibilities in developing novel light sources and biomarker detectors.  相似文献   

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Organic light‐emitting diodes (OLEDs) have their performance limited by the number of emissive singlet states created upon charge recombination (25%). Recently, a novel strategy has been proposed, based on thermally activated up‐conversion of triplet to singlet states, yielding delayed fluorescence (TADF), which greatly enhances electroluminescence. The energy barrier for this reverse intersystem crossing mechanism is proportional to the exchange energy (ΔEST) between the singlet and triplet states; therefore, materials with intramolecular charge transfer (ICT) states, where it is known that the exchange energy is small, are perfect candidates. However, here it is shown that triplet states can be harvested with 100% efficiency via TADF, even in materials with ΔEST of more than 20 kT (where k is the Boltzmann constant and T is the temperature) at room temperature. The key role played by lone pair electrons in achieving this high efficiency in a series of ICT molecules is elucidated. The results show the complex photophysics of efficient TADF materials and give clear guidelines for designing new emitters.  相似文献   

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The piezo‐phototronic effect can effectively engineer the energy band structure at the local interface of piezo‐semiconductor junction, and thus improve the performance of optoelectronics. In this work, a high‐performance poly(9‐vinylcarbazole) (PVK)/ZnO nanorods/graphene heterostructure photodetector is designed and fabricated using a multi‐step process. By introducing a −1.093% compressive strain to the hybrid heterostructure, carrier‐dynamics modulation at the local junctions can be induced by the piezoelectric polarization, and the photoresponsivity and the specific detectivity of the photodetector can be enhanced ≈440% and ≈132% under UV light illumination with the peak values up to 80.6 A W−1 and 2.3 × 1011 Jones, respectively. The photoresponse enhancement is attributed to the piezopotential generated at PVK/ZnO and ZnO/graphene interfaces, which promote the separation and transfer of photogenerated carriers. Physical working mechanism behind the observed results is discussed via energy band diagram. This work not only presents a new way to achieve the higher performance in photodetectors by fully utilizing piezo‐phototronic interface engineering but also provides a deep understanding of piezo‐phototronic effect on optoelectronic devices.  相似文献   

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