掺氟石英光纤的耐辐照特性

为了制作在宽波长范围内具有优良耐辐照特性的光纤，我们对掺氟石英光纤（而不是纯石英光纤）进行了研究，同时还研究了掺Ｈ２对掺氟光纤的作用，研究结果表明，掺氟能使光纤有用的波长区明显扩大；给掺氟光纤掺Ｈ２可以大大提高这些光纤的耐辐照特性。     

PMMA塑料光纤辐照特性的实验研究

理论分析了聚甲基丙烯酸甲酯（PMMA）塑料光纤受辐照后物理与化学性能的变化,并对2组塑料光纤样品进行了辐照前后光谱特性的研究及对比实验。分析了包层掺有PbO及纤芯材料特别提纯的塑料光纤以及一般塑料光纤的耐辐照特性和光谱恢复特性,发现纤芯的纯度及外包层的材料对塑料光纤的耐辐照特性具有很大的影响,这为耐辐照塑料光纤的研制提供了依据。     

耐瞬态核辐照光纤的制备和测试

本文叙述用ＰＣＶＤ法制备的耐瞬态核辐照光纤。光纤包层为Ｆ掺杂，纯ＳｉＯ２纤芯，低ＯＨ－根含量，经核辐照后的实验结果表明，光纤瞬态峰值感应损耗最低为３．４ｄＢ／ｍ·ｋｒａｄ。文中还讨论了制备中的几个问题。     

耐辐照塑料光纤的设计

提出了两种耐辐照塑料光纤的设计方案.第一种方案是采用金属氧化物和塑料的共聚物做包层,聚苯乙烯做纤芯,通过包层对射线的吸收达到耐辐照的效果.第二种方案则在聚合物中引入可以吸收辐照能量的有机添加剂,从而对辐照下的光纤起到保护的作用.这些方案为研制耐辐照塑料光纤打下了基础.     

Ce掺杂对空间激光通信掺铒光纤的耐辐照影响研究

辐照环境下掺铒光纤性能下降严重影响了其在空间环境中的应用,而Ce可以凭借其变价能力抑制光纤的辐致损伤效应。利用螯合物气相沉积法制备了不同Ce掺杂量的掺铒光纤,在常温下使用⁶⁰Co辐照源对光纤进行了累积剂量100 krad、剂量率6.17 rad/s的辐照实验。通过吸收损耗谱的测试发现Ce掺杂含量高的光纤在辐照后损耗为419.185 dB/km@1 200 nm,且荧光寿命变化量减小了0.578 ms。通过切片芯层透过率及电子顺磁共振测试发现Ce掺杂可以有效降低光纤中Al和Ge相关的色心缺陷数量。最后通过增益测试验证了Ce掺杂对掺铒光纤抗辐照能力的改善,辐照后高Ce掺杂的光纤比未掺杂Ce光纤的增益高出4.15 dB。实验结果表明,Ce掺杂可以有效增强掺铒光纤抗辐照性能,这一结论对掺铒光纤在太空中的应用具有重要意义,该研究结果能够为后续掺铒光纤的耐辐照加固及其在空间中的应用提供参考。     

抗辐照偏振保持光纤的研制

太空中γ射线的强度非常高,光纤陀螺中的光纤在如此强的辐照条件下损耗急剧增加,将造成其停止工作.设计了纯石英纤芯的熊猫型偏振保持光纤,采用MCVD工艺制备具有掺F包层的单模棒和应力棒,用打孔镶嵌技术研制出可以应用于航天光纤陀螺系统的保偏光纤.     

高精度光纤陀螺用掺铒光纤光源辐照性能试验

针对高精度光纤陀螺的空间应用,理论分析了用于高精度光纤陀螺的不同结构掺铒光纤光源的抗辐照性能,指出了单通后向结构的掺铒光纤光源具有更好的抗辐照性能。对单通后向结构采用不同掺杂浓度的掺铒光纤设计并研制了掺铒光纤光源,在实验室用Co60辐照源进行了大小两个剂量率的辐照试验,监测了掺铒光纤光源平均波长和输出光功率随辐照总剂量的变化,试验结果表明:掺铒光纤掺杂浓度较高时,掺铒光纤光源的抗辐照能力较强;辐照剂量率较小时,掺铒光纤光源功率随辐照总剂量的降低速度更慢。掺杂浓度较高的掺铒光纤光源可以满足高精度光纤陀螺空间应用的要求。     

高功率光纤激光器用20/400双包层掺镱光纤

采用改进化学气相沉积结合溶液掺杂法制造出了掺镱石英光纤预制棒,预制棒轴向上芯径波动小于5%,折射率差波动小于8%。研磨加工后拉制出20/400双包层掺镱光纤,光纤纤芯不圆度为2%,芯包同心度偏差为0.87 μm。双包层掺镱光纤在1095 nm的包层损耗为2.1 dB/km。采用拉制的掺镱双包层光纤作为直接振荡结构全光纤化激光器的增益光纤实现了1195 W的1080 nm激光输出,斜率效率达82%。     

基于液相掺杂的低损耗近等厚芯层掺稀土光纤

过高的纤芯损耗和纤芯折射率非均匀性严重制约了掺稀土光纤在高功率光纤激光器中的应用,提出一种基于液相掺杂的低损耗近等厚芯层掺稀土光纤的工艺方法.结合改良的化学气相沉积(MCVD)溶液掺杂法制备了含有多层疏松层的掺稀土光纤预制棒,理论分析了光纤预制棒缩棒前、后芯层差的变化原理,采用流量递减沉积工艺降低了缩棒后不同芯层之间的...     

基于玻璃分相技术的大芯径掺镱光纤及其激光研究

报道了一种基于玻璃分相技术制备大尺寸(直径为3mm,长度为270mm)掺镱(Yb3+)石英玻璃芯棒,进而制备大芯径(纤芯直径为80μm,外包层直径为400μm)掺Yb3+双包层光纤的新技术。实验测试了光纤的折射率剖面、Yb3+吸收谱以及背景损耗,并演示了其激光性能。结果表明:该光纤的纤芯折射率分布均匀,数值孔径约为0.065;Yb3+的掺杂浓度(质量分数)为1.22%,在976nm处的吸收系数为6.5dB/m,在793nm处的背景损耗为0.03dB/m;基于主控振荡器的功率放大器结构,光纤在976nm半导体激光器抽运下实现了1080nm激光输出,光纤长度为2.5m,斜率效率达到78%,最大激光输出功率为300W。玻璃分相技术为制备大尺寸、高均匀性有源石英玻璃芯棒提供了新的技术路径,在制备大芯径高掺杂光纤及具有复杂纤芯结构的有源光纤方面具有巨大潜力。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.