共查询到19条相似文献,搜索用时 93 毫秒
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散粒噪声携带纳米结构与器件载流子输运丰富的信息,为了提取这些信息,需要完整地测量散粒噪声时间序列.文中从全计数统计(FCS)学对噪声信号分析需求出发,通过分析散粒噪声特点和影响因素,提出了一种实现纳米结构与器件散粒噪声时间序列的测试方案,并论证了方案实现的方法. 相似文献
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外加磁场对含双δ势垒的铁磁/半导体/铁磁异质结中自旋输运和散粒噪声的影响 总被引:1,自引:1,他引:0
研究了外磁场存在时,含双δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和散粒噪声,讨论了量子尺寸效应和Rashba自旋轨道耦合效应.研究结果表明:不同自旋取向的电子隧穿异质结时,透射概率和散粒噪声随半导体长度的变化特性是作等幅振荡;外加磁场和Rashba自旋轨道耦合强度的增强都会加大透射概率和散粒噪声的振荡频率;外加磁场角度的改变会改变散粒噪声的振荡频率;双δ势垒的存在增大了自旋电子透射概率的振幅. 相似文献
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在介绍纳电子器件基本输运理论基础上,着重分析量子点结构器件模型,讨论了量子点上能级分立和电子填充的各种情况,以及电子自旋的影响,特别强调了纳米限制系统中局域态电子和非局域态电子相互作用特征。综述了目前纳电子器件的研究进展及其应用。 相似文献
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自组装半导体量子点在纳米电子器件中的应用 总被引:1,自引:0,他引:1
随着微电子工艺逐渐逼近其物理极限,具有量子特性的纳米电子器件的研制被提上日程.自组装半导体量子点由于缺陷少、生长技术成熟和具有δ函数形式的能态密度等优点而被广泛用于纳米电子器件制备中.本文按纵向输运器件、横向输运器件的分类扼要评述了该领域的最新进展,并对待解决的问题和发展前景作了分析. 相似文献
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《电子技术与软件工程》2017,(10)
随着社会的进步和科技的发展,电子器件在生活中越发普及,第二次工业革命使人类社会正式进入了电气时代,第三次工业革命使人类社会进入了信息时代,现代社会生活中所用到的各类电子器件,几乎都是两个时代共同作用下的产物,虽然科技在持续进步,但电子器件依然存在各种问题,散粒噪声是其中相对较为普遍的一个,本文从散粒噪声的相关知识出发,浅析散粒噪声的测试方法。 相似文献
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一种基于非平衡态格林函数的准三维FinFET模型 总被引:2,自引:0,他引:2
提出了一种针对FinFET器件的准三维量子力学模型.采用非平衡态格林函数方法计算器件中的弹道输运电流,同时在器件垂直于沟道方向的横截面上求解二维的薛定谔方程来得到载流子的态密度分布,最终实现与三维泊松方程的自恰求解.模拟结果显示纳米尺度的FinFET器件具有良好的开关特性和亚阈值特性.这个模型还能适用于量子线等其他三维结构的纳米器件. 相似文献
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G. Iannaccone G. Lombardi M. Macucci C. Ciofi B. Pellegrini 《Analog Integrated Circuits and Signal Processing》2000,24(1):73-78
We present numerical simulations and measurements of shot noise in resonant tunneling structures. We show that when electron-electron interaction through Coulomb force and Pauli exclusion is properly taken into account, the main features of noise behavior of such devices can be correctly predicted. Electron-electron interaction is shown to be responsible for the suppression of shot noise in the positive differential resistance region of the I-V curve, and for the enhancement of shot noise in the negative differential resistance region. 相似文献
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A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach. 相似文献
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对多种纳米材料和纳米器件的噪声进行了比较详细的研究,对纳米器件中几种常用的噪声测量方法进行了探讨。讨论了利用噪声(主要是散粒噪声)进行介观电学机制探测的方法,并提出了用于解决单电子晶体管中背景电荷噪声的有效方法,揭示了双势垒共振隧穿二极管在负微分电阻区的散粒噪声大于Poisson值的本质。 相似文献
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Lambert B. Malbert N. Verdier F. Labat N. Touboul A. Vandamme L.K.J. 《Electron Devices, IEEE Transactions on》2001,48(4):628-633
The low frequency Schottky diode noise has been investigated in GaAs power MESFETs. For those devices, gate noise spectra are generally composed of 1/f and shot noise contributions. We have observed an increase by two orders of magnitude of the noise level when MESFETs are submitted to rf life-test. The increase of the 1/f noise can be explained by a modification of the gate space charge region extension. This interpretation is sustained by a reduction of the drain current transient magnitude and the inherent active trap density. A correlation is assumed between the increase of the shot noise level after rf life-test and a micro-plasma formation. Both 1/f noise and shot noise evolution might originate in a local increase of the electric field in the vicinity of the gate in drain access region. We have demonstrated that LF gate current noise is an early indicator of damage mechanisms occurring at the gate-semiconductor and passivation-semiconductor interfaces of the devices 相似文献
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长波长PIN/HBT集成光接收机前端噪声分析 总被引:1,自引:0,他引:1
文章研究磷化铟(InP)基异质结双极晶体管(HBT)和PIN光电二极管(PIN-PD)单片集成技术,利用器件的小信号等效电路详细计算了长波长PIN/HBT光电子集成电路(OEIC)光接收机前端等效输入噪声电流均方根(RMS)功率谱密度.分析表明:对于高速光电器件,当频率在100 MHz~2 GHz范围内时,基极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用;频率大于5 GHz时,集电极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用.在上述结论的基础上,文章最后讨论了在集成前端设计的过程中减小噪声影响的基本方法. 相似文献
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Noise measurements were performed on several commercially available phototransistor optical isolators in order to examine the signal detection limits of typical devices. It was found that, in general, phototransistor optical isolators are very noisy devices exhibiting all of the common types of noise usually found in bipolar junction transistors. A large number of devices exhibited burst noise which dominated their low-frequency noise performance. The noise performance of devices without burst noise was dominated by 1/f noise or flicker noise at low frequencies and by shot noise at high frequencies. Experimental data indicates that in most cases the electrical noise contribution of the LED is negligible and that the dominant source of noise is the phototransistor. 相似文献
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