Preparation and properties of YBa2Cu3O7 thin films on sapphire with Yttria-stabilized zirconia buffer layer

YBa₂Cu₃O₇ superconducting thin films were deposited onR-plane sapphire substrates with Yttria-stabilized zirconia buffer layer by laser ablation. The structure of the films was characterized by X-ray diffraction. Superconducting transitional temperatures as high as 90 K and critical current densities up to 2.2×10⁶ A/cm² (77 K) were achieved. The results of Auger depth profile showed that no obvious diffusion occurred between the substrate and the YBa₂Cu₃O₇ thin film.     

Double-sided YBa2Cu3O7−δ superconducting films prepared by laser ablation with a Si radiation heater

Double-sided superconducting YBa₂Cu₃O_7?δ thin films have been prepared by pulsed laser ablation with a Si radiation heater. Measurements show that those samples are of good quality with zero resistance temperatures of ≥90 K, critical current densities of ≥3 x 10⁶ A/cm² at 77 K and zero field, and 10 GHz microwave surface resistances of 370μΩ (second side) and 1.7 mΩ (first side), respectively. The X-ray diffraction patterns indicate that each side of the samples isc-axis oriented epitaxial YBa₂Cu₃O_7?δ film. Scanning electron microscopy (SEM) reveals that the surface of the films is rather smooth with no particle larger than 1 μm.     

Microwave properties of highly oriented YBa2Cu3O7-δ superconducting thin films

We have performed millimeter-wave frequency (94 GHz) measurements on high-quality YBa₂Cu₃O₇-δ superconducting films on yttrium-stabilized (100) ZrO₂ and MgO substrates. The ～0.2μm thin films fabricated by magnetron sputteringin situ with the YBa₂Cu₃O₇-δ powders as target exhibit superconducting transition temperatures up to 88 K. The critical current density of 6×10⁵ A/cm² at 77 K and the X-ray diffraction spectrum as well as scanning electron microscope photographs indicate these thin films are fullyc-axis oriented, extremely high in density, and universally homogeneous. Millimeter-wave surface resistances have been measured on a hemisphere open resonator in the temperature range of 20 K toT _c and beyond. The surface resistance at 94 GHz and 77 K for these films is found to be about 30 mΩ, nearly 1/4 that for copper, and a drop of two orders in the surface resistance within 4 K is observed, which indicates that these films are good materials for applications in the millimeter-wave range, especially for fabricating microwave devices. We observed such low surface resistance in these thin films due to the near absence of grain and phase boundaries coupled with a high degree of crystalline orientation.     

Superconducting YBa2Cu3O7?δ Thin Film Detectors for Picosecond THz Pulses

Ultra-fast THz detectors from superconducting YBa₂Cu₃O_7?δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO₂ and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm²) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.     

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa₂Cu₃O₇ and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa₂Cu₃O₇ films grown on bare sapphire are shown to giveT _c=90 K, critical current >10⁶ A/cm² at 77 K and surface resistance =450μΩ. Application of epitaxial metallic LaNiO₃ thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La_0·6Pb_0·4MnO₃ thin films up to 50% is highlighted.     

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa₂Cu₃O_7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa₂Cu₃O_7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa₂Cu₃O_7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×10⁶ A/cm² at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.     

Growth of YBa2Cu3O7−x thin films by ion beam sputtering

Polycrystalline, superconducting YBa₂Cu₃O_7−x films have been grown by ion beam sputtering (IBS) of bulk stoichiometric ceramic target. We found that the superconducting properties of the films are very sensitive to the choice of the substrates and post-deposition annealing conditions. Films deposited on SrTiO₃ substrates were found to be the best with a critical onset transition temperature, T_c to be as high as 95 K with a maximum current carrying capacity in superconducting state of 1.5 × 10⁵ A/cm² which is close to the best reported value for single-crystal YBa₂Cu₃O_7−x films.     

Effect of columnar defects on theJ c anisotropy of YBa2Cu3O7−δ thin films and YBa2Cu3O7−δ /PrBa2Cu3O7−δ multilayers

Epitaxial YBa₂Cu₃O_7?δ thin films (YBCO) and YBa₂Cu₃O_7?δ /PrBa₂Cu₃O_7?δ multilayers (Y/Pr) were irradiated with high-energy heavy ions (770 Mev²⁰⁸Pb) under various directionsφ relative to thec-axis. The irradiation resulted in columnar defects tilted byφ from thec-axis. The angular dependence of their pinning activity was studied by measuring the anisotropy of the critical current density. TheJ _c (B, T,?) behavior of the irradiated YBCO thin films showed an additional peak, which exceeds the intrinsic pinning peak, exactly at the irradiation direction. The Y/Pr multilayers, however, showed an isotropicT _c -enhancement by a factor of 5, without any additional structure in theJ _c(B, T,?) curve.     

Effect of PrBa2Cu3O7−x buffer layer thickness on the properties of YBa2Cu3O7−x thin films grown on sapphire by laser ablation

Superconducting YBa₂Cu₃O_7?x (YBCO) thin films were deposited onr-plane A1₂O₃ substrates with PrBa₂Cu₃O_7?x (PBCO) buffer layer by XeCl excimer laser ablation. The thickness of PBCO buffer layer was systematically changed to investigate the superconducting properties of YBCO thin films on sapphire. The structure and surface morphology of the films were characterized by X-ray diffraction and scanning electron microscopy (SEM). Superconducting transition temperatures were varied depending on the buffer layer thickness. Interdiffusion between laser-ablated YBCO thin films and A1₂O₃ substrates had been studied by Auger electron spectroscopy (AES). The results of this study show that diffusion does not occur between the YBCO thin film and the substrate even with 20 Å thick PBCO buffer layer.     

Correlation Between the Morphology of Ag and the Contact Resistivity of the Ag/YBa2Cu3O7?δ Thin Film Contact

The morphology of the silver films deposited and annealed on laser ablated YBa₂Cu₃O_7– thin films and the corresponding contact resistivity have been systematically investigated. A minimum contact resistivity of 6 × 10^–8 cm² was reached at 77 K by annealing Ag/YBa₂Cu₃O_7– contact at the optimum temperature. The effect of the annealing temperature on the contact resistivity was explained by considering the morphology of the silver films and the diffusion of silver into YBa₂Cu₃O_7– film, etc. The difference of the contact resistivity for Ag contact to polycrystalline, single crystal and thin film of YBa₂Cu₃O_7– were also explained.     

Interaction between the Ferromagnetic Dots and Vortices: Numerical Calculation and Experimental Results

Enhancing the pinning force in high-T _c superconductors can be achieved by externally introduced periodic magnetic dots. We numerically calculate the interaction between ferromagnetic dots and vortices in high-T _c superconductors. The London equation is used to generate two-dimensional vortex lattice. In the matching condition, we calculate the attraction force between magnetic dots and vortices. It is found that in an ideal condition, the pinning force of the magnetic dot reaches 2.5×10⁻¹¹ N that is more than one order magnitude stronger than the intrinsic pinning force in YBa₂Cu₃O₇ thin films. In the experimental side, we use a novel nano-technique to deposit periodic submicron Ni dots on YBa₂Cu₃O₇ thin films. The current versus voltage characteristics of an YBa₂Cu₃O₇ thin film strip with uniform Ni dots are measured at various temperatures and magnetic fields. They are compared with the current versus voltage characteristics of a bare YBa₂Cu₃O₇ thin film strip without magnetic dots. It is found the critical current value of the strip with Ni dots reduces with a much slower pace as the magnetic field strength increases in comparison with the value of the bare sample.     

YBa2Cu3O x superconducting thin films prepared by low temperature vacuum codeposition

Y-Ba-Cu-O films were prepared by low temperature codeposition of three components. The Y and Cu contents were evaporated from metallic sources, while Ba was vacuum-evaporated from Ba, BaO and BaF₂ sources in separate codeposition experiments. The lowest temperature at which superconducting YBa₂Cu₃O _x thin films (about 0.5μm thick) preparedin situ was near 500°C. This process enables preparation of superconducting films on various substrates (SrTiO₃, MgO, Al₂O₃, Si) without a buffer layer. Zero-resistance critical temperature was as high as 88 K and the critical current density was 10⁴ A/cm² at 4.2 K. The morphology of the films was granular with disordered grain orientation, the average grain size being typically 0.5μm.     

Nonlinear resistance behavior of ultrathin epitaxial YBa2Cu3O7−x films in the vicinity of superconducting transition

The resistance-current dependencies R(I, T) of ultrathin YBa₂Cu₃O_7?x films were investigated in wide regions of resistance and temperatures in zero magnetic field. Ultrathin YBa₂Cu₃O_7?x (near 30Å of the thickness) films were prepared in the form of epitaxial heterostructure YBa₂Cu₃O_7?x /PrBa₂Cu₃O_7?x. The R(I,T) curves show ohmic behavior at low currents and nonlinear one at higher current. At Tc (resistive transition temperature) shapes of R(I) curves undergo remarkable changes. Ohmic behavior vanishes down to T_c≈36K and the curvature of logR(logI) plots changes sign from convex downward to upward showing “real” high critical current I_c,T?4.2K≥3·10⁶ A/cm².     

Novel ceramic substrates for high Tc superconductors

A group of complex perovskite oxides REBa₂NbO₆ (RE=La and Dy) have been synthesized and developed for their use as substrates for both YBa₂Cu₃O_7-δ and Bi(2223) superconductors. These materials have a complex cubic perovskite (A₂BB′O₆) structure with lattice constants,a=8·48?8·60 Å. REBa₂NbO₆ did not show any phase transition in the temperature range 30–1300°C. The thermal expansion coefficient, thermal diffusivity and thermal conductivity values of REBa₂NbO₆ are favourable for their use as substrates for highT _c superconductors. The dielectric constant and loss factor of REBa₂NbO₆ are in a range suitable for their use as substrates for microwave applications. Both YBa₂Cu₃O_7-δ and Bi(2223) superconductors did not show any detectable chemical reaction with REBa₂NbO₆ even under extreme processing conditions. Dip coated YBa₂Cu₃O_7-δ thick films on polycrystalline REBa₂NbO₆ substrate gave aT _c(0) of 92 K and a current density of ～1·1×10⁴ A/cm² and Bi(2223) thick film on polycrystalline REBa₂NbO₆ substrate gave aT _c(0) of 110 K and a current density of ～ 4×10³ A/cm² at 77 K and zero magnetic field. A laser ablated YBa₂Cu₃O_7-δ thin film deposited on polycrystalline REBa₂NbO₆ substrate gave aT _c(0) of 90 K and a current density of ～5×10⁵ A/cm².     

Large-Area YBa2Cu3O7 − x Films on Sapphire with Excellent Microwave Power Handling Capability

Crack-free thick YBa₂Cu₃O_{7 ? x} films are prepared on CeO₂ buffered r-cut sapphire (2 inch in diameter) with thickness up to 700 nm, smooth surfaces (“peak-to-valley” roughness <10 nm), high critical currents (J _C > 2 MA/cm² at 77 K and 0 T), and low microwave surface resistances (R _s(77K) ?.4mω and R _s(4.2K) ?.110μω at 19.15GHz) comparable to the best values reported in the literature for YBCO films on structurally better matched substrates. These thick YBCO films were able to handle high microwave power corresponding to magnetic field amplitudes (B _HF) up to 54, 37, and 17.4 mT at 4.2, 50, and 77 K, respectively, which for the lower temperatures were limited by the available power of the 25-W HF amplifier. The high-power performance, which to our knowledge belongs to the best reported so far for unpatterned YBa₂Cu₃O_{7 ? x} films, was achieved without any degradation of the samples despite frequent thermal cycling.     

Thermodynamic determination of the electron-phonon coupling strength in YBa2Cu3O7−δ

The relative enthalpy of YBa₂Cu₃O_7?δ has been measured between the temperatures 273 and 700 K. From these data, we find that the electronic contribution to the specific heat is linear in temperature with a Sommerfeld constant of 25±3 mJ/mole. K². We analyze the data to show that the normal state of YBa₂Cu₃O_7?δ is described by two conduction bands and strong electron-phonon coupling. The electron-phonon coupling is, in fact, sufficient to account for the highT _c in YBa₂Cu₃O_7?δ .     

Critical current density and microstructure of YBa2Cu3O7 thin films post-annealed at a low oxygen partial pressure

Post-annealing of thin films of YBa₂Cu₃O₇ (YBCO) has been performed at 29 Pa and 750°C. For films 0.6 μm thick, a critical current density >1 MA cm^?2 is obtained at 77 K, with a sharp eddy current response at 25 MHz. Microstructural investigation of these films by crosssectional and planar transmission electron microscopy reveals that the YBCO film has thec-axis normal to the plane of the substrate in a continuous sheet of varying thickness, frequently covering the entire thickness of the film. Mutually perpendicular rods with thec-axis in the plane of the LaAlO₃ substrate are also seen. The microstructure and critical current density of these films are compared with those of previously reported films post-annealed in atmosphericpressure oxygen.     

Fabrication of low cost YBCO coated conductors using Ag-clad Hastelloy substrates

Mechanically reinforced Ag-clad Hastelloy tapes were fabricated as the inexpensive substrates for coated conductors without any buffer layer. The clad substrate has good adhesion between Ag and Hastelloy layers. Superconducting YBa₂Cu₃O₇ (YBCO) films were directly deposited on Ag-clad Hastelloy substrates by chemical vapor deposition in high magnetic fields. YBCO films were highly oriented along the c-axis perpendicular to the substrate with a zero resistance transition temperature of 86.2 K and a transport J_c value of 10⁴ A/cm² at 77 K and zero magnetic field. These results indicate that the present work appears to be a promising way for the development of YBCO films for large-scale applications.     

Laser patterning of superconducting YBa2Cu3O7–x thin films

Abstract

Epitaxial YBa₂Cu₃O_7–x thin films have been patterned using aKrF excimer laser. Contact masks and mask imaging have been used to obtain YBa₂ Cu₃O_7–x bridges 8–20 μm in width. The process has been carried out under different environmental and laser fluence conditions. The best morphology is obtained in vacuum and with the highest laser fluences. The material composition in the bridges depends strongly on the fluence but not on the environment. The composition edges become steeper as the fluence is increased over the ablation threshold. Mask imaging allows retention of the electrical properties of the original film in the bridges, with a critical temperature greater than 91 K, a transition width of 1·5 K, and a critical current density greater than 10⁶ A cm^?2 at 77 K. The bridges defined by contact masks have slightly inferior superconducting properties but they can be recovered by annealing in flowing oxygen.

MST/3224     

Growth mode and dielectric properties in laser MBE grown multilayer of SrTiO3 and YBa2Cu3Oy

We have prepared perovskite SrTiO₃/YBa₂Cu₃O_y/LaAlO₃ multilayer using laser molecular beam epitaxy technique. The evolution of growth mode from YBa₂Cu₃O_y followed by SrTiO₃ was observed using in-situ reflective high-energy electron diffraction. The high-quality crystal structures of the grown films were also evidenced from X-ray diffraction analysis. The Raman scattering measurements were employed to study the lattice dynamic properties of SrTiO₃ layer in the temperature range from 10 to 300 K. Strain and oxygen vacancies possibly contribute to the lowering of symmetry and the breaking of the central symmetry in SrTiO₃. Temperature dependence of the dielectric constant and loss of thin films under different applied frequencies were evaluated.