Optical constants of polycrystalline CuGaTe2 films

Thin films of CuGaTe₂ with thicknesses in the range, 0.1–1.0 μm were deposited on Corning 7059 glass substrates by flash evaporation. The substrate temperatures, T_s, were maintained in the range 373–623 K. The transmittance of the films was recorded in the wavelength range 900–2500 nm. The dependence of the optical band gap, E_g, on substrate temperature showed that the value of E_g varied from 1.21 eV to 1.24 eV. The variation of refractive index and extinction coefficient with photon energy was studied from which the material properties such as the limiting value of dielectric constant, ε_∞, plasma frequency, ω_p, and hole effective mass, m_h^*, were evaluated as ε_∞ = 7.59, ω_p = 1.47 × 10¹⁴ and m_h^* = 1.25 m₀.     

CdSe band-splitting on thermal annealed films

Semiconducting polycrystalline CdSe thin films were prepared on glass substrates by chemical bath at 65 °C. As-deposited films grew in the metastable cubic sphalerite (S) crystalline structure with good stoichiometry. Upon thermal annealing (TA) in Ar+Se₂ atmosphere at different temperatures in the range 200–500 °C, the gradual phase transformation from cubic modification to hexagonal wurtzite (W) stable phase could be observed. From optical absorption measurements the fundamental energy band gap (E_g) and the second electronic transition (E_g+ΔE_g) were calculated for as-deposited and thermal annealed films. For TA350 °C, S-phase dominates the crystalline structure and only the spin orbit (ΔE_so) contribution to ΔE_g is present. Above 350 °C, the W-phase dominates and the energy splitting (ΔE_cf), owed to crystal field contribution and originated by the loss of lattice symmetry, should be added to ΔE_so in order to complete ΔE_g in the W-phase. The values ΔE_so=0.389±0.011 eV and ΔE_cf=0.048±0.018 eV were found from our analysis, and T_c=350 °C was here defined as the critical point of the phase transformation.     

Effect of Ca2PbO4 on the formation of the (2223) phase in the Bi---Pb---Sr---Ca---Cu---O system

The effect of excess Ca₂PbO₄ on the superconducting properties of Bi_1.7Pb_0.3Sr₂Ca₂Cu₃O_yB_x (B ≡ Ca₂PbO₄) is investigated through X-ray diffraction, resistivity and a.c. magnetic susceptibility measurements. The Xpray diffraction results show that the volume friction of the low T_c (221s) phase decreases and that of (2223) phase increases with the addition of Ca₂PbO₄. For x = 0.6 and 1.5, only the (2223) phase exists. At higher Ca₂PbO₄ concentrations, i.e. for x = 3.0, the low T_c phase again appears along with the high T_c phase. Diffraction peaks appear at d = 2.02, 2.814 and 2.85, which are characteristic peaks of Ca₂PbO₄, and their intensities increase with increasing x, indicating that Ca₂PbO₄ exists in the lattice in the same form. However, the T_c(0) values decreased gradually from 107 to 98 K with increasing Ca₂PbO₄ concentration. Compared with the undoped sample, the width of the transition δT_c is broad for impurity-added samples and reaches a maximum value for x = 3.0. Pure and Ca₂PbO₄-doped samples showed two peaks in ξ″ vs. T curves and two steps in ξ′ vs. T curves. The first peak is close to the transition temperature and corresponds to the midpoint of the first step in the ξ′ curve. The second peak appears below 98 K and this peak maximum corresponds to the midpoint of the second step. The position of both sets of peaks remained almost the same up to x = 1.5 and shifted towards lower temperatures thereafter. The role of Ca₂PbO₄ in the growth of the (2223) phase and the mechanism of energy loss are discussed.     

Optical band gap studies on xPb3O4–(1−x)P2O5 lead[(II, IV)] phosphate glasses

A series of glasses in the xPb₃O₄–(1−x)P₂O₅ (red lead phosphate) (RLP) system with ‘x' varying from 0.075 to 0.4 were prepared by the single-step melt quenching process from Pb₃O₄ and NH₄H₂PO₄. The optical absorption spectra of these glasses have been recorded in the ultraviolet region from 200 to 400 nm and the fundamental absorption edges have been identified. The optical band gap E_opt values have been determined for all the glasses using the known theories. The (E_opt) values vary from 4.90 to 3.21 eV the highest being 4.57 eV, corresponding to the most stable glass of x=0.225. The absorption edge is attributed to the indirect transitions and the origin of the Urbach energy ΔE is suggested to be thermal vibrations. These glasses promise as potential candidates for application in optical technology compared to simple xPbO–(1−x)P₂O₅ (lead phosphate) (LP) glasses.     

On the electronic transport in some new synthesized high resistivity organic semiconductors in thin films

The study of temperature dependence of electrical conductivity, σ, and Seebeck coefficient, , for six new synthesized organic salts, namely N-(p-R-phenacyl)-1,10-phenanthrolinium bromides, is reported. Thin film samples (d=0.51–1.76 μm) deposited from dimethylformamide solutions onto glass substrates were been used. The inspection of samples surface was performed by means of atomic force microscopy and metallographic microscopy techniques. The experimental obtained curves σ(T) and (T) are typical for semiconducting materials. The study of Seebeck effect revealed a p-type electrical conduction mechanism of examined organic films. Using the experimental data, the values of some characteristic parameters for respective compounds (the thermal activation energy of electrical conduction, ΔE, the ratio of carrier mobilities, b, etc.) have been determined. The obtained values of ΔE ranged from 1.70 to 2.80 eV. Some correlations between these values and molecular configurations of the studied compounds are established.     

Reaction between the tetragonal tungsten bronze niobate K2Sr4Nb10O30 and the perovskite Pb(Mg1/3Nb2/3)O3

The search for dielectric materials with a high dielectric constant and ′_r = ƒ(T) curves with a flat profile fitting the X7R specification is still ongoing. Promising results were obtained by mixing compounds with closely related structures, such as the tetragonal tungsten bronze (TTB) niobate K₂Sr₄Nb₁₀O₃₀ and the perovskite Pb(Mg_1/3Nb_2/3)O₃ (PMN). The present study, based on three methods of synthesis, explores the origin of the spreading out of the dielectric curves ′_r = ƒ(T). For the composition 10x K_0.2Sr_0.4NbO₃ (KSN) + (1 − x)Pb(Mg_1/3Nb_2/3)O₃ (PMN) with x = 0.3–0.6, the three synthesis methods provided similar characteristics and for the highest perovskite ratio (x = 0.3), the ′_r = ƒ(T) curve exhibits a flat profile. When lithium is used as a sintering agent, ′_r = ƒ(T) curves present a linear dependency with the temperature. These materials are also characterized by a structural and a microstructural inhomogeneity. Two phases TTB and perovskite type, different from KSN and PMN, are present after calcination and sintering, but not evenly distributed. The PbO loss during sintering also contributes to the evolution of the properties of the material.     

Optical gap of hydrogenated amorphous and polycrystalline silicon between 4 and 973 K

A detailed study of the evolution with temperature of the optical properties of hydrogenated silicon from the amorphous state (a-Si:H) to the polycrystalline state (poly-Si) is presented. Optical measurements were performed up to 3 eV for several temperatures in the range 4–973 K and these were used to determine in particular the optical gaps E_g and the slopes B using the well-known Tauc rule (E)^1/2 = B(E − E_g). The effects of temperature annealing are analysed from the variations in E_g and B before and after crystallization. The influences of structural and thermal disorders in a-Si:H and poly-Si on the optical gap are discussed.     

ZnO掺杂对Ca0.25(Li0.43Sm0.57)0.75TiO3陶瓷烧结性能和微波介电性能的影响

采用溶胶-凝胶法制备Ca_0.25(Li_0.43Sm_0.57)_0.75TiO₃(CLST)微波介质陶瓷纳米粉体, 研究了ZnO掺杂量和烧结温度对CLST+ xmol% ZnO陶瓷烧结性能和微波介电性能的影响。XRD分析结果表明: 随着ZnO掺杂量x的增加, 陶瓷的晶体结构从正交相变为伪立方相, 并在x≥1.5的样品中出现了杂相。CLST+ xmol% ZnO陶瓷的致密化烧结温度随x的增加而降低, x=1.0的样品的致密化烧结温度比x=0的降低了200 ℃。介电常数ε_r和频率品质因数Qf 随x增加和烧结温度的升高具有最优值, 频率温度系数则单调降低。x=1.0的样品在1100 ℃烧结时具有优异的综合性能: ρ = 4.85 g/cm³, ε_r =102.8, Qf = 5424 GHz, τ_f = -8.2×10^-6/℃。表明ZnO掺杂的CLST陶瓷是一种很有发展潜力的微波介质陶瓷。     

Optical transitions near the band edge in bulk CuInxGa1−xSe2 from ellipsometric measurements

From the analysis of the variation of optical absorption coefficient with incident photon energy between 0.8 and 2.6 eV, obtained from ellipsometric data, the energy E_G of the fundamental absorption edge and E_G′ of the forbidden direct transition for CuIn_xGa_1−xSe₂ alloys are estimated. The change in E_G and the spin-orbit splitting Δ_SO=E_G′−E_G with the composition x can be represented by parabolic expression of the form E_G(x)=E_G(0)+ax+bx² and Δ_SO(x)=Δ_SO(0)+a′x+b′x², respectively. b and b′ are called “bowing parameters”. Theoretical fit gives a=0.875 eV, b=0.198 eV, a′=0.341 eV and b′=−0.431 eV. The positive sign of b and negative sign of b′ are in agreement with the theoretical prediction of Wei and Zunger [Phys. Rev. B 39 (1989) 6279].     

Doping effects on the optical properties of evaporated a-Si:H films

Thin films of a-Si:H are deposited on substrates at 300°C by a conventional thermal evaporation technique. The electrical conductivity of these films is modified by the addition of antimony giving n-type films. The optical properties of the films are investigated using spectrophotometric measurements of the transmittance and reflectance in the wavelength range 200–3000 nm. Both the refractive index n and the absorption coefficient increase when the Sb content is increased. The absorption edge shifts to lower energies for doped films. The optical gap E_g is evaluated using three different plots for comparison, namely; (hν)^1/2, (/hν)^1/2 and (hν)^1/3. The value of E_g decreases with doping for the three expressions. The Urbach parameter E₀ is calculated and found to increase with doping from 74 meV for the undoped film to 183 meV for concentrations of 9.4 at.% Sb.     

(1-x)K0.48Na0.52NbO3-xBi0.45Nd0.05(Na0.92Li0.08)0.5ZrO3无铅压电陶瓷相结构及压电性能

为了在获得较高压电性能的同时又不大大降低陶瓷的居里温度(T_C), 设计和制备了Bi_0.45Nd_0.05(Na_0.92Li_0.08)_0.5ZrO₃改性的K_0.48Na_0.52NbO₃系无铅压电陶瓷((1-x)KNN-xBNNLZ), 研究了BNNLZ含量对KNN基无铅压电陶瓷相结构和电学性能的影响。研究结果表明, 所有陶瓷样品均具有较高的居里温度T_C(>300℃)。随着BNNLZ含量的增加, 陶瓷的正交-四方相变温度(T_O-T)不断向低温方向移动, 而三方-正交相变温度(T_R-O)不断向高温方向移动, 最终在陶瓷中形成了三方-四方(R-T)共存相, R-T共存相处于0.05<x<0.07范围。BNNLZ的加入引起陶瓷相结构的演化改变导致压电常数(d₃₃ )、介电常数(ε_r )、剩余极化强度 (P_r )和机电耦合系数(k_p )都先增大后减小, 当x=0.06时陶瓷具有最佳压电性能: d₃₃=313 pC/N, k_p=42%, P_r=25.48 μC/cm², ε_r=1353, tanδ=2.5%, T_C=327℃。     

Calculation of the ferrite volume in some dual phase steels

The relation between the γ/γ + boundary temperature, T, and the equivalent values of [Cr] and [Ni], as well as the variation of the ferrite volume, V_f, with the temperature in + γ dual-phase steels have been studied. With the aid of a computer, the regressive expressions derived from the experimental results are: T (°C) = T₃ + 21.2 [Cr] − 15.8 [Ni] + 223; V_f (%) = 0.715 exp [0.015(T − T_δ)] − exp[0.015(T_c − T_δ)] + 1.85 exp [0.0083(T − T_c]).     

Synthesis of AlN by reactive sputtering

We present a systematic study of the sub-band gap optical absorption coefficients (hν) in the range 1.2–6 eV vs. deposition-temperature (T_s from 27 to 450°C) films deposited on silica by 13.6 MHz magnetron sputtering of an Al target with 53 and 72% N₂ in the reactive mixture. X-ray diffraction, infrared absorption and Raman diffusion are also presented, mainly on films deposited on Si in the same run to help in the characterisation of the films. All signals are specific of AlN polycrystalline films, which are of better quality when deposited with 72% N₂. The lowest sub-band gap optical absorption around 5×10² cm⁻¹ is obtained for deposition on silica at T_s=300°C with 72% N₂ and is close to that of heteroepitaxial films deposited on sapphire.     

Phase formation process of IrxSi1−x thin films Structure and electrical properties

Experimental data on the phase formation process of amorphous Ir_xSi_1−x thin films with 0.30 ≤ x ≤ 0.41 are presented and discussed in relation to electric transport properties. The structure formation process at temperatures from 300 K up to 1223 K was investigated by means of X-ray diffraction. Distinct phases were observed in the final stage in dependence on the initial composition: Ir₃Si₄, Ir₃Si₅, and IrSi₃. An unknown metastable phase was found in films with a silicon concentration of 61 at.% to 64 at.% after annealing above the crystallization temperature T = 970 K. The crystal structure of this phase was determined by the combined use of X-ray diffraction and electron diffraction. It was found to be monoclinic, basic-face centred with lattice constants a = 1.027 nm, b = 0.796 nm, c = 0.609 nm, and γ = 113.7°. Additionally, microstructure and morphology of the films were investigated by transmission electron microscopy (TEM). The annealing process was studied by means of mechanical stress investigations as well as by electrical resistivity and thermopower measurements. Correlations between the structure, the phase formation and the electrical transport behaviour are discussed on the basis of conduction mechanism.     

Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

Highly conducting p- and n-type poly-Si:H films were deposited by hot wire chemical vapor deposition (HWCVD) using SiH₄+H₂+B₂H₆ and SiH₄+H₂+PH₃ gas mixtures, respectively. Conductivity of 1.2×10² (Ω cm)⁻¹ for the p-type films and 2.25×10² (Ω cm)⁻¹ for the n-type films was obtained. These are the highest values obtained so far by this technique. The increase in conductivity with substrate temperature (T_s) is attributed to the increase in grain size as reflected in the atomic force microscopy results. Interestingly conductivity of n-type films is higher than the p-type films deposited at the same T_s. To test the applicability of these films as gate contact Al/poly-Si/SiO₂/Si capacitor structures with oxide thickness of 4 nm were fabricated on n-type c-Si wafers. Sputter etching of the poly-Si was optimized in order to fabricate the devices. The performance of the HWCVD poly-Si as gate material was monitored using C–V measurements on a MOS test device at different frequencies. The results reveal that as deposited poly-Si without annealing shows low series resistance.     

Structural and optical properties of (100 − x)(Li2B4O7) − x(SrO–Bi2O3–0.7Nb2O5–0.3V2O5) glasses and glass nanocrystal composites

Glasses of various compositions in the system (100 − x)(Li₂B₄O₇) − x(SrO–Bi₂O₃–0.7Nb₂O₅–0.3V₂O₅) (10  x  60, in molar ratio) were prepared by splat quenching technique. The glassy nature of the as-quenched samples was established by differential thermal analyses (DTA). The amorphous nature of the as-quenched glasses and crystallinity of glass nanocrystal composites were confirmed by X-ray powder diffraction studies. Glass composites comprising strontium bismuth niobate doped with vanadium (SrBi₂(Nb_0.7V_0.3)₂O_9−δ (SBVN)) nanocrystallites were obtained by controlled heat-treatment of the as-quenched glasses at 783 K for 6 h. High resolution transmission electron microscopy (HRTEM) of the glass nanocrystal composites (heat-treated at 783 K/6 h) confirm the presence of rod shaped crystallites of SBVN embedded in Li₂B₄O₇ glass matrix. The optical transmission spectra of these glasses and glass nanocrystal composites of various compositions were recorded in the wavelength range 190–900 nm. Various optical parameters such as optical band gap (E_opt), Urbach energy (ΔE), refractive index (n), optical dielectric constant and ratio of carrier concentration to the effective mass (N/m^*) were determined. The effects of composition of the glasses and glass nanocrystal composites on these parameters were studied.     

Fabrication and characterization of (1−x)SrBi2Ta2O9–xBi3TaTiO9 layered structure solid solution thin films for ferroelectric random access memory (FRAM) applications

We report on the properties of (1−x)SrBi₂Ta₂O₉–xBi₃TaTiO₉ solid solution thin films for ferroelectric non-volatile memory applications. The solid solution thin films fabricated by modified metalorganic solution deposition technique showed much improved properties compared to SrBi₂Ta₂O₉. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 600°C and grain size was found to be considerably increased for the solid solution compositions. The film properties were found to be strongly dependent on the composition and annealing temperatures. The measured dielectric constant of the solid solution thin films was in the range 180–225 for films with 10–50% of Bi₃TaTiO₉ content in the solid solution. Ferroelectric properties of (1−x)SrBi₂Ta₂O₉–xBi₃TaTiO₉ thin films were significantly improved compared to SrBi₂Ta₂O₉. For example, the observed remanent polarization (2P_r) and coercive field (E_c) values for films with 0.7SrBi₂Ta₂O₉–0.3Bi₃TaTiO₉ composition, annealed at 650°C, were 12.4 μC/cm² and 80 kV/cm, respectively. The solid solution thin films showed less than 5% decay of the polarization charge after 10¹⁰ switching cycles and good memory retention characteristics after about 10⁶ s of memory retention. The improved microstructural and ferroelectric properties of (1−x)SrBi₂Ta₂O₉–xBi₃TaTiO₉ thin films compared to SrBi₂Ta₂O₉, especially at lower annealing temperatures, suggest their suitability for high density FRAM applications.     

Influence of thermal treatments on the elastic parameters in iron rich metallic glasses

The change of magnetoelastic properties after thermal treatments has been investigated for two groups of metallic glasses. (Fe₇₉Co₂₁)_75+xSi_15−1.4xB_10+0.4x (x (at.%)=0, 2, 4, 6, 8, 10) has been studied both in the as-prepared state and after thermal annealing in an applied magnetic field, to achieve a particular domain structure, at temperatures well below the crystallization temperatures. Changes in the ΔE effect, magnetomechanical coupling (k) and internal friction coefficient (Q⁻¹) are reported, reaching values of about 60% of the saturation value E_S. Fe₆₄Ni₁₀Nb₃Cu₁Si₁₃B₉ alloys annealed in vacuum for 1 h in the temperature range 350–550 °C showed maximum values of the ΔE effect and k of 61% and 0.85, respectively, accompanied by a minimum value of Q of around 2 for the sample annealed at 460 °C. These variations are related to the progress of nanocrystalization. The properties achieved are among the best reported for magnetomechanical applications.