Magnetic-Field-Induced Level Crossing and the Spin Dynamics of Excitons in Zn1?xMnxTe/ZnTe Quantum Wells

Magnetic-field-induced level crossing and the spin dynamics of excitons in a Zn_1–x Mn _x Te/ZnTe single quantum well are studied. The circularly-polarized photoluminescence (PL) shows that the down spin branch of the Zn_1–x Mn _x Te exciton overlaps with both the up and down spin branches of the ZnTe exciton at a crossing field (H _c) of 4 T, due to the giant Zeeman shift of Zn_1–x Mn _x Te. The PL intensities and lifetimes in each layer become gradually equal toward H _c, which shows the mixing of wavefunctions of the excitons generated in each layer. Above H _c, each branch of the spin-polarized exciton separates again. The lifetimes of the spin-polarized exciton PL reflect the spin-flip relaxation in ZnTe and the spin mixing between Zn_1–x Mn _x Te and ZnTe layers.     

Magnetic-Field-Induced Level Crossing and the Spin Dynamics of Excitons in Zn1−x Mn x Te/ZnTe Quantum Wells

Magnetic-field-induced level crossing and the spin dynamics of excitons in a Zn_1?x Mn _x Te/ZnTe single quantum well are studied. The circularly-polarized photoluminescence (PL) shows that the down spin branch of the Zn_1?x Mn _x Te exciton overlaps with both the up and down spin branches of the ZnTe exciton at a crossing field (H _c) of 4 T, due to the giant Zeeman shift of Zn_1?x Mn _x Te. The PL intensities and lifetimes in each layer become gradually equal toward H _c, which shows the mixing of wavefunctions of the excitons generated in each layer. Above H _c, each branch of the spin-polarized exciton separates again. The lifetimes of the spin-polarized exciton PL reflect the spin-flip relaxation in ZnTe and the spin mixing between Zn_1?x Mn _x Te and ZnTe layers.     

Structure and optical properties of polycrystalline Cd1−xZnxTe thin films prepared by simultaneous evaporation

Cd_1–xZn_xTe films were deposited by simultaneous evaporation of CdTe and ZnTe. These Cd_1–xZn_xTe films were of cubic phase, and strongly (1 1 1) oriented as deposited. Predominant direct optical transitions were observed and the band gap varied with zinc content in a non-linear way. A structure development of CdS/CdTe/ZnTe : Cu solar cells with a Cd_1–xZn_xTe buffer layer was proposed.     

Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation

Polycrystalline Cd_0.96Zn_0.04Te thin films are deposited onto glass substrates (Corning 7059) kept at room temperature by vacuum evaporation. The films exhibit zinc blende structure with predominant (1 1 1) orientation. The rms roughness of the films evaluated by atomic force microscope is 3.7 nm. The band gap energy of the films measured by optical transmittance measurement is 1.539 eV. The photoluminescence (PL) spectrum of the films shows intense emission due to free and bound exciton recombination and no emission associated with crystal imperfection and PL line shapes give indications of the high quality of the layers. These films have been implanted with properly mass analyzed Boron ions (¹⁰B⁺) and the effect of implantation has been analyzed by X-ray diffraction, Raman scattering and optical transmittance measurements and the results are explained on the basis of the implantation induced surface roughness and lattice disorder.     

Studies of key technologies for large area CdTe thin film solar cells

The structure and main manufacturing technologies of CdTe film solar cells of large area are reviewed. Among the technologies, some have been developed for application in a pilot manufacturing line. The high resistant SnO₂ (HRT) thin films have been fabricated by PECVD. The effects of annealing on the structure and properties have been studied. A surface etching process of CdTe in low temperature and lower concentration of nitric acid has been developed. The Cd_1 − xZn_xTe ternary compound films have been studied. In order to improve the back contact layer, Cd_0.4Zn_0.6Te layer with 1.8 eV band gap as a substitute for ZnTe layer is introduced in CdTe cells. The effects of the technologies on performance of CdTe cells and feasibility of application in the modules are discussed.     

Effect of sputtering power on the properties of Cd1 − xZnxTe films deposited by radio frequency magnetron sputtering

Cd_1 − xZn_xTe films were prepared by radio frequency (r.f.) magnetron sputtering from Cd_0.9Zn_0.1Te slices target with different sputtering power (60-120 W). The effects of sputtering power on the properties of Cd_1 − xZn_xTe films were studied using X-ray diffraction (XRD), energy dispersive X-ray (EDX), atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. The composition of the deposited films was determined by EDX. The Cd content was found always to be higher than the Te content, regardless of sputtering power. This behavior may be explained by the preferential sputtering of cadmium atoms in the target. XRD studies suggest that ZnTe secondary phases were coexisted in Cd_1 − xZn_xTe films. The origin of the secondary phase is ascribed to the lowest sticking coefficient of Zn atom. AFM micrographs show that the grain size increases with the sputtering power. The optical transmission data indicate that shallow absorption edge occurs in the range of 750-850 nm, and the sputtering power does not have a clear effect on the optical absorption coefficient. In Hall Effect measurements, the sheet resistivities of the deposited films are 1.988 × 10⁸, 8.134 × 10⁷, 8.088 × 10⁷ and 3.069 × 10⁷ Ω/sq, respectively, which increase with the increasing of sputtering power.     

Giant Zeeman Effects and Spin Dynamics of Excitons in Dense Self-Organized Quantum Dots of CdSe and Cd1?xMnxSe

Giant Zeeman effects and spin dynamics of excitons are studied in dense self-organized quantum dots (QDs) of CdSe and Cd_1–xMn_xSe. Microphotoluminescence (PL) measurements for each individual dot reveal the typical dot diameter of 3.5 ± 0.2 nm and the density of 5000 m^–2 in the CdSe QDs. The exciton lifetime is shorter in smaller dots with higher energies, indicating energy transfer and tunneling processes among the dots. Circular polarization of excitonic PL is observed at 0 T with an opposite sign to that of the excited light and with the rise time of 50 ps. The CdSe QDs coupled with a Zn_1–xMn_xSe layer show the giant Zeeman shift of exciton, arising from overlapping of exciton wavefunctions in the dots with Mn ions. Spin polarization dynamics in the coupled QDs is also studied.     

Dark-red-emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: Effect of chemicals on properties

CdTe_0.5Se_0.5/Cd_0.5Zn_0.5S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution.     

Giant Zeeman Effects and Spin Dynamics of Excitons in Dense Self-Organized Quantum Dots of CdSe and Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se

Giant Zeeman effects and spin dynamics of excitons are studied in dense self-organized quantum dots (QDs) of CdSe and Cd_1–xMn_xSe. Microphotoluminescence (PL) measurements for each individual dot reveal the typical dot diameter of 3.5 ± 0.2 nm and the density of 5000 m^–2 in the CdSe QDs. The exciton lifetime is shorter in smaller dots with higher energies, indicating energy transfer and tunneling processes among the dots. Circular polarization of excitonic PL is observed at 0 T with an opposite sign to that of the excited light and with the rise time of 50 ps. The CdSe QDs coupled with a Zn_1–xMn_xSe layer show the giant Zeeman shift of exciton, arising from overlapping of exciton wavefunctions in the dots with Mn ions. Spin polarization dynamics in the coupled QDs is also studied.     

Carrier dynamics and activation energy of CdxZn(1-x)Te/ZnTe quantum dots on GaAs and Si substrates

We have investigated the carrier dynamics and activation energy of CdxZn(1-x)Te/ZnTe quantum dots (QDs) on GaAs and Si substrates. The carrier dynamics of QDs on GaAs and Si substrates is studied using time-resolved photoluminescence (PL) measurements, revealing shorter exciton lifetimes of QDs on Si substrate. In particular, the activation energy of electrons confined in QDs on the GaAs substrate, as obtained from temperature-dependent PL spectra, is higher than that of electrons confined in QDs on the Si substrate. Both results confirm that defects and dislocations in QDs on the Si substrate provide nonradiative channels.     

Synthesis and nano-field-effect transistors of p-type Zn0.3Cd0.7Te nanoribbons

Ternarysemiconductor Zn_0.3Cd_0.7Te nanoribbons are, firstly, synthesized via a two-step process, and the structure characterizations reveal that the as-synthesized nanoribbons are single-crystalline with a zinc blende structure and a crystal growth direction of [1-10]. Nano-field-effect transistors are fabricated based on single nanoribbon, and the electron transport characteristics demonstrate that the Zn_0.3Cd_0.7Te ribbons have p-type conductivity with a mobility (μ_h) of 5.7 cm²V⁻¹S⁻¹ and carrier concentration (n_h) about 1.1 × 10¹⁷ cm⁻³. The prepared nanoribbons with significant p-type conductivity will be a very attractive candidate for nanoelectronic devices.     

Structural and optical properties of Cd x Zn(1 − x)Te thin films

Seven Cd _x Zn_{(1 ? x} Te solid solutions with x = 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0 were synthesized by fusing stoichiometric amounts of CdTe and ZnTe constituents in silica tubes. Each composition was used in the preparation of a group of thin films of different thicknesses. Structural investigation of the obtained films indicates they have a polycrystalline structure with predominant diffraction lines corresponding to (111) (220) and (311) reflecting planes, which can be attributed to the characteristics of growth with the (111) plane. The optical constants (the refractive index n, the absorption index k, and the absorption coefficient α) of Cd _x Zn_{(1 \s -x)} Te thin films were determined in the spectral range 500–2000 nm. At certain wavelengths it was found that the refractive index, n, increases with increasing molar fraction, x. It was also found that plots of α² (hv) and α^1/2 (hv) yield straight lines, corresponding to direct and indirect allowed transitions respectively obeying the following two equations: $$\begin{gathered} E_g^d = 1.583 + 0.277x + 0.197x^2 \hfill \\ E_g^{ind} = 1.281 + 0.111x + 0.302x^2 \hfill \\ \end{gathered}$$      

Photoluminescence of CdHgTe based nanoheterostructures

We have studied the photoluminescence (PL) spectra of Cd _x Hg_{1 − x} Te/Cd _y Hg_{1 − y} Te nanohetero-structures grown by molecular beam epitaxy on CdTe/ZnTe/GaAs substrates. The width of potential wells in the structures was varied within d = 12−200 nm and the material composition was changed within x ∼ 0.25–0.40 in the well and y ∼ 0.68–0.82 in the barrier layers. The PL spectra of samples with d ≤ 33 nm exhibit transitions between quantum confinement levels. The samples with d > 50 nm display the PL due to excitons localized on composition fluctuations, which is characteristic of Cd _x Hg_{1 − x} Te epilayers with thicknesses above 3 μm. It is established that the exciton PL band in Cd _x Hg_{1 − x} Te exhibit broadening that is determined both by stochastic fluctuations of the composition and by its macroscopic inhomogeneities.     

Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots

This paper reports on time-integrated and time-resolved microphotoluminescence (/spl mu/-PL) measurements of single InGaN quantum dots (QDs). The linewidths of the /spl mu/-PL peaks originating from single metal-organic vapor phase epitaxy-grown III/V InGaN QDs are measured, implying dephasing times of at least 5 ps. Temporal fluctuations of the QD emission energy are observed, and these are explained in terms of randomly generated local electric fields inducing a Stark shift in the optical emission of the InGaN QDs. Time-resolved measurements demonstrate that decay dynamics from single InGaN QDs are exponential in nature. Measurements of the effect of temperature upon the recombination times in individual InGaN QDs have been performed from 4 to 60 K.     

Phase transitions of room temperature RF-sputtered ZnO/Mg0.4Zn0.6O multilayer thin films after thermal annealing

We report the thermal stability of room-temperature RF-sputtered Mg_0.4Zn_0.6O thin films and ZnO/Mg_0.4Zn_0.6O superlattices at 600 °C and 800 °C. The phase of room-temperature as-sputtered Mg_0.4Zn_0.6O is crystalline ZnO embedded in an amorphous or short-range-ordered hexagonal MgZnO matrix. Annealing at either 600 °C or 800 °C for 5 min transforms the matrix into a crystalline hexagonal wurtzite structure, leading to a decrease of the optical bandgap (E_g) of Mg_0.4Zn_0.6O. This also results in a slight change near the absorption edge of the superlattice transmission spectrum. The films precipitate cubic MgZnO after heating Mg_0.4Zn_0.6O at 800 °C for 5 min; by contrast, precipitations take at least 3 h if the samples are heated at 600 °C. Heating at 800 °C for more than 3 h significantly reduces the film thickness and E_g, attributed to the decomposition of superlattices and diffusion of magnesium into the substrate, respectively. On the other hand, annealing the ZnO/Mg_0.4Zn_0.6O superlattice at 600 °C for 12 h also produces an initial slight change in the optical transmission spectra, yet the spectra remain essentially unchanged for the remainder of the annealing process.     

NiS/Cd0.6Zn0.4S Schottky Junction Bifunctional Photocatalyst for Sunlight-Driven Highly Selective Catalytic Oxidation of Vanillyl Alcohol Towards Vanillin Coupled with Hydrogen Evolution Reaction

Selective oxidation of biomass-based molecules to high-value chemicals in conjunction with hydrogen evolution reaction (HER) is an innovative photocatalysis strategy. The key challenge is to design bifunctional photocatalysts with suitable band structures, which can achieve highly efficient generation of high-value chemicals and hydrogen. Herein, NiS/Cd_0.6Zn_0.4S Schottky junction bifunctional catalysts are constructed for sunlight-driven catalytic vanillyl alcohol (VAL) selective oxidation towards vanillin (VN) coupling HER. At optimal conditions, the 8% NiS/Cd_0.6Zn_0.4S photocatalyst achieves high activity of VN production (3.75 mmol g⁻¹ h⁻¹) and HER (3.84 mmol g⁻¹ h⁻¹). It also exhibits remarkable VAL conversion (66.9%), VN yield (52.1%), and selectivity (77.8%). The photocatalytic oxidation of VAL proceeds a carbon-centered radical mechanism via the cleavage of α_C–H bond. Experimental results and theoretical calculations show that NiS with metallic properties enhances the electron transfer capability. Importantly, a Ni-S-Cd “electron bridge” formed at the interface of NiS/Cd_0.6Zn_0.4S further improves the separation/transfer of electrone/h⁺ pairs and also furnishes HER active sites due to its smaller the |ΔG_H*| value, thereby resulting in a remarkably HER activity. This work sheds new light on the selective catalytic oxidation VAL to VN coupling HER, with a new pathway towards achieving its efficient HER efficiency.     

Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy

We report on the molecular beam epitaxy (MBE) of heterostructures with CdTe/ZnTe quantum dots (QDs) with relatively low surface density, which could be used as single-photon emitters. The QDs were formed on the surface of a 3.1- to 4.5-monolayer-thick two-dimensional strained CdTe layer by depositing amorphous Te layer and its fast thermal desorption. Subsequent thermal annealing of the surface with QDs in the absence of external Te flux led to strong broadening and short-wavelength shift of the QD photoluminescence (PL) peak. Measurement of the micro-PL spectra of individual CdTe/ZnTe quantum dots in fabricated mesastructures with a diameter of 200—1000 nm allowed estimation of the QD surface density as ~10¹⁰ cm^–2.     

CdSe/Cd1−x Zn x S core/shell quantum dots with tunable emission: growth and morphology evolution

We demonstrate an organic synthesis to fabricate hydrophobic core/shell CdSe/Cd_1?x Zn _x S quantum dots (QDs) with tunable photoluminescence (PL) between green and red at relatively low temperature using trioctylphosphine S reacted directly with cadmium and zinc acetate. A seeded growth strategy was used for preparing large CdSe cores. Large CdSe cores revealed a rod-like morphology while small one exhibited a spherical shape. Being coated with a Cd_1?x Zn _x S shell on spherical CdSe cores with an average size of 3.9 nm in diameter, core/shell QDs exhibited a cubic morphology (a length of 5 nm). In contrast, the core/shell QDs created using a small core (3.3 nm in diameter) show a spherical morphology. Namely, the anisotropic aggregation behavior of CdS monomers on CdSe cores occurs when the rod-like core is coated with a Cd_1?x Zn _x S shell. CdS interlayer plays an important role for such morphology evolution because all CdSe cores with a pure ZnS shell exhibited a spherical morphology. The PL properties of CdSe/Cd_1?x Zn _x S core/shell QDs depended strongly on the size and morphology of the cores. The QDs revealed a narrow and tunable PL spectrum. It is believed that this facile strategy can be extended to synthesize other core–shell QDs at low temperature.     

Design and Synthesis of CdHgSe/HgS/CdZnS Core/Multi-Shell Quantum Dots Exhibiting High-Quantum-Yield Tissue-Penetrating Shortwave Infrared Luminescence

Cd_xHg_1−xSe/HgS/Cd_yZn_1−yS core/multi-shell quantum dots (QDs) exhibiting bright tissue-penetrating shortwave infrared (SWIR; 1000–1700 nm) photoluminescence (PL) are engineered. The new structure consists of a quasi-type-II Cd_xHg_1−xSe/HgS core/inner shell domain creating luminescent bandgap tunable across SWIR window and a wide-bandgap Cd_yZn_1−yS outer shell boosting the PL quantum yield (QY). This compositional sequence also facilitates uniform and coherent shell growth by minimizing interfacial lattice mismatches, resulting in high QYs in both organic (40–80%) and aqueous (20–70%) solvents with maximum QYs of 87 and 73%, respectively, which are comparable to those of brightest visible-to-near infrared QDs. Moreover, they maintain bright PL in a photocurable resin (QY 40%, peak wavelength ≈ 1300 nm), enabling the fabrication of SWIR-luminescent composites of diverse morphology and concentration. These composites are used to localize controlled amounts of SWIR QDs inside artificial (Intralipid) and porcine tissues and quantitatively evaluate the applicability as luminescent probes for deep-tissue imaging.     

Metalorganic Vapor-Phase Epitaxy of ZnTe and CdZnTe on GaAs

ZnTe and Cd_{1 – y} Zn _y Te epilayers were grown on GaAs(111)B and GaAs(100) substrates by metalorganic chemical vapor deposition. The structural perfection and surface morphology of the layers were investigated by double-crystal x-ray diffraction and scanning electron microscopy. The effect of deposition conditions on the growth rate, zinc content (y), surface morphology, and structural perfection of the epilayers was studied. The results suggest that the optimal structures for depositing HgCdTe(111)B and HgCdTe(100) are CdTe(111)B/GaAs(111)B and CdTe(100)/ZnTe(100)/GaAs(100), respectively.