一种提高量子线路保真度的映射方法

由噪声导致的双量子比特门操作错误是可逆的量子线路执行结果保真度下降的重要原因。提出一种将量子线路映射至含噪声量子计算设备的策略,提高量子线路在量子计算设备上的执行成功率。该策略给出一种寻找近邻路径方法,用于在量子比特不是全连通的量子计算设备上找出2个量子比特的近邻路径;由于在近邻路径上任意2个近邻量子比特的噪声一般不同,基于近邻路径上的双量子比特门执行成功率构建启发式函数,估算前瞻窗口内的线路保真度,并根据该代价函数选择保真度最高的近邻方式。通过测试多个Benchmarks,实验结果表明,与Qiskit工具包中SabreSwap和BasicSwap算法相比,本文所提策略的量子线路保真度平均提高65.67%和71.60%。该方法可以提高量子线路保真度。     

Nanoscale Engineering for Reducing Phase Noise in Electronic Devices

An investigation of electronic 1/f noise in ultrasmall devices and systems is presented, focused on nanoscale engineering of electronic devices for low phase noise. The investigation is based on the quantum 1/f formulas. Nanotechnology raises new questions of electronic noise, since fluctuations are more important in smaller devices. Based on the quantum 1/f noise theory, we find that in a certain transition range of sizes this general law is suspended, but reappears for 1/f noise in the nanometer domain, where the transition from coherent to conventional quantum 1/f effect is complete. The coherent and conventional quantum 1/f effects and their connection are briefly derived. The resulting quantum 1/f formulas are used to derive the 1/f noise of GaN/AlGaN MODFETs, resonant tunneling diodes, bulk acoustic wave and surface acoustic wave quartz resonators, microelectromechanical systems resonators,and spin valves. They are also used to calculate phase noise in these devices and in oscillators based on them, from first principles along with some classical noise sources. Device optimization is thus facilitated for ultrasmall devices.     

Investigation of thermal effects in quantum-cascade lasers

The development of a thermal model for quantum cascade lasers (QCLs) is presented. The model is used in conjunction with a self-consistent scattering rate calculation of the electron dynamics of an InGaAs-AlAsSb QCL to calculate the temperature distribution throughout the device which can be a limiting factor for high temperature operation. The model is used to investigate the effects of various driving conditions and device geometries, such as epilayer down bonding and buried heterostructures, on the active region temperature. It is found that buried heterostructures have a factor of eight decrease in thermal time constants compared to standard ridge waveguide structures in pulsed mode and allow a /spl sim/78% increase in heat sink temperature compared to epilayer down mounted devices in continuous-wave mode. The model presented provides a valuable tool for understanding the thermal dynamics inside a quantum cascade laser and will help to improve their operating temperatures.     

Quantum limited detection in tunnel junction mixers

A complete quantum generalization of microwave mixer theory is constructed for nonlinear single-particle tunnel junctions. The result represents a unification of the concepts used to describe these "classical" resistive mixers with the language of photon detection. Tunneling devices are predicted to undergo a transition from energy detectors to photon counters when operated at frequencies where the photon energy becomes comparable to the voltage scale of the dc nonlinearity. The small-signal video current response is found to approach one electron for each photon absorbed at high frequencies. In a heterodyne receiver, sufficiently nonlinear tunnel junctions are predicted to be capable of achieving the fundamental quantum noise limit for sensitivity in the detection of electromagnetic radiation. The theory presented here thus provides a framework for systematically extending the techniques of quantum electronics to considerably lower frequencies than are currently being exploited. Recent measurements of heterodyne mixer performance using superconductive tunneling devices are already beginning to approach quantum limited results at microwave and millimeter wave frequencies. Eventual application of tunnel barriers as photon detectors in the submillimeter and infrared spectral regions also appears to be possible, and the fast response times of such devices could give them an advantage over photoconductors even at the higher frequencies. The development of suitable nonlinear tunnel junctions contains the potential to bridge the present gap in quantum detectors between the infrared photon devices and microwave masers.     

Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources

1/f noise in semiconductors, semiconductor devices, and collision-free devices (like vacuum tubes) is presented from a unified point of view, using an extended version of the F.N. Hooge equation (Physica, vol. 83b, p.9, 1976), which is generalized to all collision-dominated systems involving mobility, diffusion, and cross-section fluctuations. It also applies to collision-free processes involving vacuum tubes, Schottky barrier diodes operating in the thermionic mode, and in devices such as p-i-n diodes in which collision processes are not the determining factor. A generalized schematic is given for expressing the noise spectrum S/sub 1/(f) in the external circuit in terms of distributed noise sources of the nonuniform devices in terms of alpha /sub H/, so the latter can be determined from the former. It is then found that the Hooge parameter. alpha /sub H/ introduced by this equation can be used as a general measure of the noisiness of a system or device. Several cases in which the noise does not obey the quantum 1/f noise theory are discussed. Measurements on many different devices are examined, and an attempt is made to correlate measured values of the Hooge parameter with the values calculated from P.H. Handel's quantum theory of 1/f noise (1975, 1980).<>     

A new method for inpainting of depth maps from time-of-flight sensors based on a modified closing by reconstruction algorithm

Time-of-Flight (ToF) sensors are popular devices that extract 3D information from a scene but result to be susceptible to noise and loss of data creating holes and gaps in the boundaries of the objects. The most common approaches to tackling this problem are supported by color images with good results, however, not all ToF devices produce color information. Mathematical morphology provides operators that can manage the problem of noise in single depth frames. In this paper, a new method for the filtering of single depth maps, when no color image is available, is presented, based on a modification to the morphological closing by reconstruction algorithm. The proposed method eliminates noise, emphasizing a high contour preservation, and it is compared, both qualitative and quantitatively, with other state-of-the-art filters. The proposed method represents an improvement to the closing by reconstruction algorithm that can be applied for filter depth maps of ToF devices.     

Self-heating effects in SOI MOSFETs and their measurement by smallsignal conductance techniques

Self-heating is an important issue for SOI CMOS, and hence, so is its characterization and modeling. This paper sets out how the critical parameters for modeling, i.e., thermal resistance and thermal time-constants, may be obtained using purely electrical measurements on standard MOS devices. A summary of the circuit level issues is presented, and the physical effects contributing to thermally related MOSFET behavior are discussed. A new thermal extraction technique is presented, based on an analytically derived expression for the electro-thermal drain conductance in saturation. Uniquely, standard MOSFET structures can be used, eliminating errors due to additional heat flow through special layouts. The conductance technique is tested experimentally and results are shown to be in excellent agreement with thermal resistance values obtained from noise thermometry and gate resistance measurements using identical devices. It is demonstrated that the conductance technique can be used confidently over a wide range of bias conditions, with both fully and partially depleted devices     

A high-temperature superconducting receiver for low-frequency radiowaves

We have developed a receiver for low-frequency radio waves using high-temperature superconducting quantum interference devices (SQUIDs). The primary application of such a receiver is to communicate in underground areas where the overburden results in significant losses at the usual radio frequencies. The receiver constructed consists of a SQUID, a small dewar, control electronics, and a battery pack. The SQUID was fabricated in our laboratory using an edge junction technology, discussed in previous publications. For this work we increased the effective area by including a standard galvanically coupled pickup loop. We have investigated background noise spectra and found that the low noise door of the SQUIDs can be fully utilized in the receiver, provided that the signals be encoded with a bandwidth narrower than the 60 Hz spacing between powerline harmonics. The most significant advantage of SQUIDs for this application is that they allow the compact construction of three-axis receivers that are necessary to overcome a dominant source of vibrational or motional noise     

The p-n junction quantum well APD: A new solid-state photodetector for lightwave communications systems and on-chip detector applications

A novel variation on the doped quantum well avalanche photodiode is presented that provides comparable signal-to-noise performance at more realizable material doping requirements. The device consists of repeated unit cells formed from a p-n Al0.48In0.52As junction immediately followed by near-intrinsic Ga0.47In0.53As and Al0.48In0.52As layers. As in the doped quantum well device, the asymmetric unit cell selectively heats the electron distribution much more than the hole distribution prior to injection into the narrow-gap Ga0.47In0.53As layer in which impact ionization readily occurs. The effects of various device parameters, such as the junction doping, Ga0.47In0.53As and intrinsic Al0.48In0.52As layer widths as well as the overall bias on the electron and hole ionization rates, is analyzed using an ensemble Monte Carlo method. From the determination of the ionization rates and the ionization probabilities per stage, P and Q, an optimal device design can be obtained that provides high gain at low multiplication noise. In addition, a structure that operates at less than 5 V bias is presented that can provide moderate gain at very low noise. It is expected that the device designs presented herein can serve either as high-gain low-noise detectors for lightwave communications systems or as moderate-gain low-noise detectors for on-chip application.     

Optimum noise-source reflection-coefficient design with feedbackamplifiers

The issue of designing a low-noise microwave feedback amplifier for a given optimum noise-source coefficient Γ_Sopt is addressed and a set of original formulas is presented. These expressions define a new procedure which does not rely on computer optimization in order to get the required noise performance of the low-noise amplifier stage. The technique permits the design of a circuit which is simultaneously noise and power matched at its input port without an input matching circuit. This method can be used to screen devices for an optimum noise performance and it provides the essential mathematical tool for designing the core of a feedback amplifier     

Fundamental quantum 1/f noise in semiconductor devices

The quantum 1/f noise theory has been developed in the last two decades and has been applied to 1/f noise suppression in various electronic devices. This theory derives fundamental quantum fluctuations present in the elementary processes of physics at the level of the quantum mechanical cross sections and process rates. This paper demonstrates the basic simplicity of the theory with an elementary physical derivation followed by a short derivation of the conventional quantum 1/f effect in second quantization, for an arbitrary number of particles N defining the scattered current in the final state. A new derivation of the coherent quantum 1/f effect is also included. No adjustable parameters are present in the quantum 1/f theory. Practical applications to semiconductor materials, p-n junctions, SQUID's and quartz resonators are presented. Optimal design principles based on the quantum 1/f theory are described and explained     

测量噪声功率谱作为筛选光电耦合器件的方法研究（Ⅱ）

在文献「１」中作者曾提出用测量光电耦合器件噪声功能率谱的方法,筛选光电耦合器件。此 根据低频噪声的幅值。但在实验中发现,由于１／ｆ、ｇ－ｒ和爆裂噪声三者之间相关性较弱,在剔除掉１／ｆ噪声值较大的器件后,ｇ－ｒ噪声和爆裂噪声较大的器件却可能未被易除。     

Noise equalization for detection of microcalcification clusters in direct digital mammogram images

Equalizing image noise is shown to be an important step in the automatic detection of microcalcifications in digital mammography. This study extends a well established film-screen noise equalization scheme developed by Veldkamp et al. for application to full-field digital mammogram (FFDM) images. A simple noise model is determined based on the assumption that quantum noise is dominant in direct digital X-ray imaging. Estimation of the noise as a function of the gray level is improved by calculating the noise statistics using a truncated distribution method. Experimental support for the quantum noise assumption is presented for a set of step wedge phantom images. Performance of the noise equalization technique is also tested as a preprocessing stage to a microcalcification detection scheme. It is shown that the square root model based approach which FFDM allows leads to a robust estimation of the high frequency image noise. This provides better microcalcification detection performance when compared to the film-screen noise equalization method developed by Veldkamp. Substantially better results are obtained than when noise equalization is omitted. A database of 124 direct digital mammogram images containing 28 microcalcification clusters was used for evaluation of the method.     

Counting distributions and error probabilities for optical receivers incorporating superlattice avalanche photodiodes

Exact gain distributions and electron counting distributions are presented for superlattice avalanche photodiodes that operate by single-carrier transport perpendicular to the superlattice planes. The characteristic shapes of these distributions are compared with those of the single-carrier conventional avalanche photodiode and the photomultiplier tube. The electron counting distributions, which assume Poisson photocarrier injection, are used to calculate the error performance of a simple optical communication system. This performance is compared with that achievable by a single-carrier conventional APD receiver of identical quantum efficiency and gain. For simplicity of calculation, the system consists of a transmitter emitting light pulses containing a Poisson number of photons and a maximum-likelihood integrate-and-dump receiver. It makes use of binary on-off keying and is subject to noise events arising from multiplied background radiation and/or multiplied dark noise. The performance of the superlattice photodiode receiver turns out to be always superior to that of the single-carrier conventional photodiode receiver, for all values of the gain. The advantage can attain several orders of magnitude (even though the excess noise factors for the two devices lie within a factor of two). The superlattice receiver with high impact-ionization probability is shown to behave like an ideal photon counter with the same quantum efficiency, even if the device has many stages. The deleterious effects of receiver thermal noise on probability of error are examined.     

低噪声自动测试及噪声源自动校准系统

本文介绍一个噪声自动测试系统。该系统主要完成两大类功能:测试低噪声器件的噪声温度和校准固态噪声源的超噪比。同时兼有测量被测件的电压驻波比和测量电子部件/器件及接收机的噪声系数等功能。测试/校准软件用于控制仪器的设置和测试流程;计算和补偿插入损耗;计算和修正失配影响;自动生成标准格式的原始记录和证书报告(包括曲线)。该系统为同轴、宽频段、全面开展无线电噪声参数测试/校准的自动测试系统。     

Theory of the GaInAs/AlInAs-doped quantum well APD: A new low-noise solid-state photodetector for lightwave communication systems

We present calculations of the electron and hole ionization coefficients, the excess noise factor, and gain for a doped quantum well APD made from the Al0.48In0.52As/Ga0.47In0.53As material systems. The ionization rates are calculated based on an ensemble Monte Carlo method. The effect of all of the device parameters, i.e., doping concentrations, layer widths, and the overall dc bias field, on the carrier ionization coefficients and the deterministic ionization probabilities,PandQ, is determined. These results in conjunction with recent noise theory results are utilized to determine an optimal device design that provides high gain at very low noise. A complete design including number of stages and individual stage design is presented for the lowest noise, highest gain device realizable in this system. It is anticipated that this device can be used as a new ultralow-noise high-gain receiver in lightwave communications systems.     

Suggestions for revised definitions of noise quantities, includingquantum effects

Recent advances in millimeter- and submillimeter-wavelength receivers and the development of low-noise optical amplifiers focus attention on inconsistencies and ambiguities in the standard definitions of noise quantities and the procedures for measuring them. The difficulty is caused by the zero-point (quantum) noise hf/2 W/Hz, which is present even at absolute zero temperature, and also by the nonlinear dependence at low temperature of the thermal noise power of a resistor on its physical temperature, as given by the Planck law. Until recently, these effects were insignificant in all but the most exotic experiments, and the familiar Rayleigh-Jeans noise formula P=kT W/Hz could safely be used in most situations, Now, particularly in low-noise millimeter-wave and photonic devices, the quantum noise is prominent and the nonlinearity of the Planck law can no longer be neglected. The IEEE Standard Dictionary of Electrical and Electronics Terms gives several definitions of the noise temperature of a resistor or a port, which include: 1) the physical temperature of the resistor and 2) its available noise power density divided by Boltzmann's constant-definitions which are incompatible because of the nature of the Planck radiation law. In addition, there is no indication of whether the zero-point noise should be included as part of the noise temperature. Revised definitions of the common noise quantities are suggested, which resolve the shortcomings of the present definitions. The revised definitions have only a small effect on most RF and microwave measurements, but they provide a common consistent noise terminology from dc to light frequencies     

Theoretical analysis of confined quantum state GaAs/AlGaAssolid-state photomultipliers

A detailed theoretical analysis of the design considerations of a solid-state photomultiplier based on avalanche multiplication of carriers out of confined quantum states is presented. Since these devices are unipolar, much lower noise and higher speed of performance are anticipated as compared with interband avalanche photodiodes. As an example of the design criteria for confined-state photomultipliers, a GaAs/Al_0.32Ga_0.68As multiquantum well structure is analyzed as to impact ionization rate, gain, dark current, and multiplied dark current. It is found that the highest gain is achieved in an asymmetric quantum well structure in which the second barrier height is half as large as the initial barrier height. The gain is further evaluated for a symmetric quantum well device. The effects of the applied electric field, quantum well doping concentration, and layer widths on device performance are examined     

Impact of additive noise on system performance of a digital X-ray imaging system

The impact of additive noise on the performance of a digital X-ray imaging system was investigated. The X-ray system is uniquely designed for small animal studies with a focal spot of 20 microm and an adjustable source-to-object distance for radiography. The noise power spectrum and the detective quantum efficiency of this system were measured. The additive noise increased rapidly when the exposure time exceeded a certain range, since the charge-coupled devices of the detector had no cooling system. The noise power spectrum for the additive noise and the noise of the entire imaging system were studied and compared at different exposure times. The detective quantum efficiency was also measured at different exposure times. It was observed that for exposure times less than 10 s, the detective quantum efficiency ((DQE)(0)) is approximately 0.26, dropping to 0.13 at 4 lp/mm and to 0.026 at 8 lp/mm. However, when the exposure exceeds a certain limit (10 s in this study), the rapidly increased additive noise caused the system to be no longer quantum noise limited, resulting in a decreased detective quantum efficiency and a degraded system performance. For example, at an exposure of 20 s, the DQE(O) is approximately 0.22, dropping to 0.11 at 3 lp/mm and to 0.022 at 8 lp/mm.     

Hardware implementation of a spatio-temporal average filter for real-time denoising of fluoroscopic images

An electronic system for the real-time denoising of fluoroscopic images is proposed in this paper. Fluoroscopic devices use X-rays to obtain real-time moving images of patients and support many surgical interventions and a variety of diagnostic procedures. In order to avoid risks for the patient, X-ray intensity has to be kept acceptably low during the clinical applications. This implies that fluoroscopic images are corrupted by large quantum noise (Poisson-distributed). Real-time noise reduction can offer a better visual perception to doctors and possible further reductions of the dose.The proposed circuit implements a spatio-temporal filter optimized for the removal of the quantum noise while preserving video edges and the prompt response of the image to the introduction of new features in the field. The filter incorporates information on the dependence of the standard deviation of the noise on the local brightness of the image and performs a conditioned average operation.The proposed circuit is implemented on FPGA (Field Programmable Gate Array) device allowing the real time elaboration of video streams composed by frames with 1024×1024 pixel and uses an external DDR2 (Double Data Rate 2) memory for the storage and the reuse of the fluoroscopic frames needed by the filter.When implemented on StratixIV-GX70 FPGA the circuit is able to process up to 49 fps (frames per second) while using 80% of the logic resources of the FPGA.