ISO/IEC JTC1/SC24伦敦会议快讯

2009年7月6～10日在英国伦敦召开了ISO／IEC JTC1／SC24全会,来自澳大利亚、中国、日本、韩国、英国和美国等国家的18位代表以及Web3D社团、SEDRIS、SC29、TC211、DIGWG等联络组织的代表参加了会议。本次会议由WG6、WG7、WG8工作组会议、工作组全会和SC24全会组成,我国代表团参加了所有会议。     

2009年ISO/IEC JTC1/SC7软件工程领域全会议题

2009年5月24～29日,ISO／IEC JTC1／SO7（软件工程）2009年全会在印度召开,来自中国、美国、英国、澳大利亚、日本、韩国等26个国家和地区的197名代表参加本次会议。本次会议主要包括SC7全会及下属工作组和特别工作组会议,确定了SC7下一步工作计划、成立的专门工作组和研究组及2010年的全会计划。     

ISO/IEC JTC1/SC28办公设备领域标准快讯

2009年6月2～12日,ISO／IECJTC1／SC28（办公设备）第20次全会及各工作组会议在韩国釜山召开,来自日本、中国、美国、德国、韩国、奥地利、俄罗斯等国家成员体的代表出席了会议。     

ISO/IEC JTC1/SC28办公设备第23届全会议题

2012年6月18～27日,ISO/IECJTC1/SC28(办公设备分技术委员会)AWG、WG2、WG3、WG4、WG5工作组会议及第23次全会在英国伦敦召开,来自中国、日本、美国、英国、韩国、奥地利、俄罗斯、荷兰国家成员体的代表参加会议。由珠海天威飞马打印耗材有限公司张希平为团长的中国代表团一行     

ISO/IECJTC1/SC34文档描述与处理语言全会概要

2011年9月26日至10月1日,ISO/IEC JTC1/SC34(文档描述与处理语言分技术委员会)全会及WG1、WG4、WG5工作组会议在韩国釜山举行,来自巴西、中国、德国、日本、韩国、英国、美国、ECMA国际、OASIS的国家成员体和联络组织参加了本次会议.我国代表参加了WG4和WG5工作组会议及SC34全会.     

ISO／IEC JTC1／SC6与ITU—T SG17联合会议主要议题

2009年2月11～20日在瑞士日内瓦召开了ISO/IECJTC1/SC6与ITU-TSG17联合会议.来自中国、美国、英国、法国、德国、日本、韩国、印度、肯尼亚、新西兰等多个国家的一百多位代表出席了此次会议.中国代表团由工业和信息化部电子工业标准化研究所徐冬梅、张晖,重庆邮电大学王浩组成.     

2012年ISO/IEC JTC1/SC38全会议题

2012年9月24～28日,ISO/IEC JTC1/SC38(分布应用平台与服务分技术委员会)2012年全会及工作组会议在瑞典召开,来自中国、美国、瑞典、法国、德国、日本等成员国家、联络组织以及ITU-T SG13/WP6近80名代表参加了会议。     

IEC／TC111／WG3有害物质检测方法新动向

IEC/TC111/WG3于2009年4月15～16日在德国柏林召开了第8次工作会议.来自中国、德国、美国等国家的30多位代表出席了此次会议.中国电子技术标准化研究所作为SAC/TC297/SC3"全国电工电子产品与系统的环境标准化技术委员会有害物质检测方法分技术委员会"(对口IEC/TV111/WG3)的秘书处单位组织业内技术专家出席了此次会议.     

ISO／IECJTC1／SC36教育技术标准领域最新动态

2009年3月19～26日,ISO/IEC JTC1/SC36国际数字教育技术标准化组织第19次工作会议在新西兰惠灵顿举行,来自美国、德国、中国等国家的60余名代表参加了会议.由全国信息技术标准化技术委员会教育技术分技术委员会组成的中国代表团一行10人出席了会议,中国代表团重点参加了WG3、WG4、WG6工作组及全体会议.     

2012年ISO/IEC JTC1/SC6全会中国提交三项技术报告

2012年2月20～24日,ISO/IEC JTC1/SC6 2012年全会及工作组会议在中国广州召开,来自奥地利、德国、韩国、荷兰、西班牙、瑞士、英国、美国和中国在内的九个国家成员体,以及中国香港、ECMA(欧洲计算机制造商协会)和IEEE-SA组织的代表参加了会议.     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.     

A 1 cm/spl times/1 cm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 1 cm/spl times/1 cm array of 100 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiodes (APD). The average breakdown voltage was 28.7 V with a standard deviation of less than 0.5 V. The distribution of breakdown voltage across the area followed a radial pattern consistent with a slight epitaxial growth nonuniformity. The mean dark current at a gain of 10, or 6.1 A/W, was 10.3 nA, and none of the 100 APDs had a dark current of more than 25 nA. The bandwidth at a gain of 10 was 6.2 GHz, and the maximum gain-bandwidth product was 140 GHz. This technology is ideally suited for next-generation three-dimensional imaging applications.