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1.
GUO-HUA CHEN JIN LIU XU-QIONG LI HUA-RUI XU MIN-HONG JIANG CHANG-RONG ZHOU 《Bulletin of Materials Science》2011,34(6):1233-1236
Phase purity, microstructure, sinterability and microwave dielectric properties of BaCu(B2O5)-added Li2ZnTi3O8 ceramics and their cofireability with Ag electrode were investigated. A small amount of BaCu (B2O5) can effectively reduce the sintering temperature from 1075°C to 925°C, and it does not induce much degradation of the microwave
dielectric properties. Microwave dielectric properties of ε
r = 23·1, Q × f = 22,732 GHz and τ
f = − 17·6 ppm/°C were obtained for Li2ZnTi3O8 ceramic with 1·5 wt% BaCu(B2O5) sintered at 925°C for 4 h. The Li2ZnTi3O8 +BCB ceramics can be compatible with Ag electrode, which makes it a promising microwave dielectric material for low-temperature
co-fired ceramic technology application. 相似文献
2.
Jing Wang Huifang Xu Jianwei Song Haijiao Zhang Beiling Gao Yudong Huang 《Journal of Materials Science》2011,46(9):2955-2962
Lightweight composite hollow spheres with conductive and magnetic properties were prepared by using Hollow Glass Spheres (HGS)
as substrate. The morphology, composition, conductive, and magnetic properties of the resultant products were characterized
by SEM, EDX, XRD, FTIR spectra, conductivity measurement, and vibrating-sample magnetometry. Polyaniline (PANI) were in situ
polymerized on HGS with increasing ratios of PANI to HGS, resulting in the enhanced conductivity of HGS/PANI composites from
1.3 × 10−2 S/cm to 4.4 × 10−2 S/cm. Lightweight glass/Fe3O4-PANI composite hollow spheres (HGS/Fe3O4-PANI) with conductivity of 5.4 × 10−3 S/cm and magnetization of 9.25 emu/g were prepared by deposition of Fe3O4 nanoparticles onto HGS via electrostatic adsorption first, and then polymerization of aniline onto HGS/Fe3O4. The glass/PANI-Fe3O4 composite hollow spheres (HGS/PANI-Fe3O4) composed of Fe3O4 as the outmost layer and PANI as the inner layer were prepared for comparison. The conductivity and magnetization of HGS/PANI-Fe3O4 were 1.1 × 10−4 S/cm and 2.61 emu/g, respectively. 相似文献
3.
The thermoelectric power and d.c electrical conductivity of x V2O5⋅40CaO⋅(60−x)P2O5 (10 ≤ x ≤ 30) glasses were measured. The Seebeck coefficient (Q) varied from +88 μ V K−1 to −93 μV K−1 as a function of V2O5 mol%. Glasses with 10 and 15 mol% V2O5 exhibited p-type conduction and glasses with 25 and 30 mol% V2O5 exhibited n-type conduction. The majority charge carrier reversal occurred at x = 20 mol% V2O5. The variation of Q was interpreted in terms of the variation in vanadium ion ratio (V5 +/V4 +). d.c electrical conduction in x V2O5⋅40CaO⋅(60−x)P2O5 (10 ≤ x ≤ 30) glasses was studied in the temperature range of 150 to 480 K. All the glass compositions exhibited a cross over from
small polaron hopping (SPH) to variable range hopping (VRH) conduction mechanism. Mott parameter analysis of the low temperature
data gave values for the density of states at Fermi level N (EF) between 1.7 × 1026 and 3.9 × 1026 m−3 eV−1 at 230 K and hopping distance for VRH (RVRH) between 3.8 × 10−9m to 3.4 × 10−9 m. The disorder energy was found to vary between 0.02 and 0.03 eV. N (EF) and RVRH exhibit an interesting composition dependence. 相似文献
4.
J.?S.?Almeida T.?S.?M.?Fernandes A.?J.?M.?Sales M.?A.?S.?Silva G.?F.?M.?P.?Júnior H.?O.?Rodrigues A.?S.?B.?Sombra
In this paper, the structural and dielectric properties of BNO (BiNbO4) was investigated as a function of the external RF frequency and temperature. The BNO Ceramics, prepared by the conventional
mixed oxide method and doped with 3, 5 and 10 wt. % Bi2O3–PbO were sintered at 1,025 °C for 3 h. The X-ray diffraction patterns of the samples sintered, shown the presence of the
triclinic phase (β-BNO). In the measurements obtained at room temperature (25 °C) was observed that the largest values of
dielectric permittivity (ε′
r
) at frequency 100 kHz, were for the samples: BNO5Bi (5 wt. % Bi2O3) and BNO5Pb (5 wt. % PbO) with values ε′
r
~ 59.54 and ε′
r
~ 78.44, respectively. The smaller values of loss tangent (tan δ) were for the samples: BNO5Bi and BNO3Pb (3 wt. % PbO) with
values tan δ ~ 5.71 × 10−4 and tan δ ~ 2.19 × 10−4, respectively at frequency 33.69 MHz. The analysis as a function of temperature of the dielectric properties of the samples,
obtained at frequency 100 kHz, showed that the larger value of the relative dielectric permittivity was about ε′
r
~ 76.4 at temperature 200 °C for BNO5Pb sample, and the value smaller observed of dielectric loss was for BNO3Bi sample at
temperature 80 °C, with about tan δ ~ 5.4 × 10−3. The Temperature Coefficient of Capacitance (TCC) values at 1 MHz frequency, present a change of the signal from BNO (−55.06 ppm/°C)
to the sample doped of Bi: BNO3Bi (+86.74 ppm/°C) and to the sample doped of Pb: BNO3Pb (+208.87 ppm/°C). One can conclude
that starting from the BNO one can increase the doping level of Bi or Pb and find a concentration where one have TCC = 0 ppm/°C,
which is important for temperature stable materials applications like high frequency capacitors. The activation energy (H)
obtained in the process is approximately 0.55 eV for BNO sample and increase with the doping level. These samples will be
studied seeking the development ceramic capacitors for applications in radio frequency devices. 相似文献
5.
R. N. P. Choudhary Dillip K. Pradhan C. M. Tirado G. E. Bonilla R. S. Katiyar 《Journal of Materials Science》2007,42(17):7423-7432
The nanocrystalline fine powders (∼80 nm) of (Ba1−x
La
x
)(Fe2/3W1/3)1−x/4O3, (BLFW) (x = 0.0, 0.05, 0.10 and 0.15) were synthesized with a combined mechanical activation and conventional high-temperature solid-state
reaction methods. Preliminary X-ray structural analysis of pellet samples (prepared from fine powders) showed formation of
a single-phase tetragonal system. Detailed studies of dielectric properties (εr and tan δ) exhibit that these parameters are strongly dependent on frequency, temperature and La composition. The La-substitution
increases the dielectric constant and decreases the tan δ up to 10% substitutions of La at the Ba-site, and then reversed
the variation, and hence this composition is considered as a critical composition. This observation was found valid for structure,
microstructures, dielectric constant, electrical conductivity, J–E characteristics and impedance parameters also. Like in other perovskites (PZT, BZT), La substitution plays an important role
in tailoring the properties of Ba(Fe2/3W1/3)O3 ceramics. 相似文献
6.
Huanfu Zhou Xiuli Chen Liang Fang Changzheng Hu Hong Wang 《Journal of Materials Science: Materials in Electronics》2010,21(9):939-942
Ba5Nb4O15 powders were synthesized by molten-salt method in NaCl–KCl flux at a low temperature of 650–900 °C for 2 h, which is lower
than that of the conventional solid-state reaction. This simple process involved mixing of the raw materials and salts in
a certain proportion. Subsequent calcination of the mixtures led to Ba5Nb4O15 powders at 650–900 °C. XRD and SEM techniques were used to characterize the phase and morphology of the fabricated Ba5Nb4O15 powders, respectively. After sintering at 1,300 °C for 2 h, the densified Ba5Nb4O15 ceramics with good microwave dielectric properties of εr = 39.2, Q × f approximated as 27,200 GHz and τ
f
= 72 ppm/°C have been obtained. 相似文献
7.
Jie Su Xiaomei Lu Chao Zhang Junting Zhang Song Peng Xiaobo Wu Kangli Min Fengzhen Huang Jinsong Zhu 《Journal of Materials Science》2011,46(10):3488-3492
Ho3Fe5O12 ceramics were fabricated by the solid-state reaction method. The results revealed an increase of the grain size, dielectric
constant, and dielectric loss, while a decrease of the remnant magnetization and coercive field with increasing sintering
temperature. A dielectric relaxation behavior was observed, which might be associated with the charge carrier hopping between
Fe2+ and Fe3+. A cole–cole fitting to loss peaks revealed a dependence of the activation energy and the broaden factor on the relative density of the
samples. Furthermore, at appropriate frequencies, the 1250 °C-sintered samples showed high dielectric constant, low dispassion,
and good temperature stability around room temperature. 相似文献
8.
xBaTiO3 + (1 − x)Ni0.93Co0.02Cu0.05Fe2O4 (x = 0.5, 0.6, 0.7, 0.8) composites with ferroelectric–ferromagnetic characteristics were synthesized by the ceramic sintering
technique. The presence of constituent phases in the composites was confirmed by X-ray diffraction studies. The average grain
size was calculated by using a scanning electron micrograph. The dielectric characteristics were studied in the 100 kHz to
15 MHz. The dielectric constant changed higher with ferroelectric content increasing; and it was constant in this frequency
range. The relation of dielectric constant with temperature was researched at 1, 10, 100 kHz. The Curie temperature would
be higher with frequency increasing. The hysteresis behavior was studied to understand the magnetic properties such as saturation
magnetization (M
s). The composites were a typical soft magnetic character with low coercive force. Both the ferroelectric and ferromagnetic
phases preserve their basic properties in the bulk composite, thus these composites are good candidates as magnetoelectric
materials. 相似文献
9.
Ashok Kumar R. S. Katiyar Ramesh Nath Premnath Carlos Rinaldi J. F. Scott 《Journal of Materials Science》2009,44(19):5113-5119
Layered nanostructures (LNs) of the commercial ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) and the natural ferroic relaxor Pb(Fe0.66W0.33)O3 (PFW) were fabricated with a periodicity of PZT/PFW/PZT (~5/1/5 nm, thickness ~250 nm) on MgO substrates by pulsed laser
deposition. The dielectric behavior of these LNs were investigated over a wide range of temperatures and frequencies, observing
Debye-type relaxation with marked deviation at elevated temperatures (>400 K). High dielectric constant and very low dielectric
loss were observed below 100 kHz and 400 K, whereas the dielectric constant decreases and loss increases with increase in
frequency, similar to relaxor ferroelectrics. Asymmetric ferroelectric hysteresis loops across UP and DOWN electric field
were observed with high remanent polarization (Pr) of about 33 μC/cm2. High imprint (~5–7 V across 250 nm thin films) were seen in ferroelectric hysteresis that may be due to charge accumulation
at the interface of layers or significant amount of strain (~3.21) across the layers. Room temperature ferromagnetic hysteresis
was observed with remanent magnetization 5.32 emu/cc and a coercive field of ~550 Oe. Temperature and field dependent leakage
current densities showed very low leakage ~10−7–10−5 A/cm2 over 500 kV/cm. We observed imprint in hysteresis that may be due to charge accumulation at the interface of layers or active
role of polar nano regions (PNRs) situated in the PFW regions. 相似文献
10.
Gang Liu Huixia Wu Haoran Zheng Lihui Tang He Hu Hong Yang Shiping Yang 《Journal of Materials Science》2011,46(18):5959-5968
Bifunctional magnetic-luminescent dansylated Fe3O4@SiO2 (Fe3O4@SiO2-DNS) nanoparticles were fabricated by the nucleophilic substitution of dansyl chloride with primary amines of aminosilane-modified
Fe3O4@SiO2 core–shell nanostructures. The morphology and properties of the resultant Fe3O4@SiO2-DNS nanoparticles were investigated by transmission electron microscopy, FT–IR spectra, UV–vis spectra, photoluminescence
spectra, and vibrating sample magnetometry. The Fe3O4@SiO2-DNS nanocomposites exhibit superparamagnetic behavior at room temperature, and can emit strong green light under the excitation
of UV light. They show very low cytotoxicity against HeLa cells and negligible hemolysis activity. The T
2 relaxivity of Fe3O4@SiO2-DNS in water was determined to be 114.6 Fe mM−1 s−1. Magnetic resonance (MR) imaging analysis coupled with confocal microscopy shows that Fe3O4@SiO2-DNS can be uptaken by the cancer cells effectively. All these positive attributes make Fe3O4@SiO2-DNS a promising candidate for both MR and fluorescent imaging applications. 相似文献
11.
Xiuli Chen Huanfu Zhou Liang Fang Dongjin Chu Changda Li Ruili Guo Hong Wang 《Journal of Materials Science: Materials in Electronics》2011,22(4):371-375
The influences of B2O3 and CuO (BCu, B2O3: CuO = 1:1) additions on the sintering behavior and microwave dielectric properties of LiNb0.6Ti0.5O3 (LNT) ceramics were investigated. LNT ceramics were prepared with conventional solid-state method and sintered at temperatures
about 1,100 °C. The sintering temperature of LNT ceramics with BCu addition could be effectively reduced to 900 °C due to
the liquid phase effects resulting from the additives. The addition of BCu does not induce much degradation in the microwave
dielectric properties. Typically, the excellent microwave dielectric properties of εr = 66, Q × f = 6,210 GHz, and τ
f
= 25 ppm/oC were obtained for the 2 wt% BCu-doped sample sintered at 900 °C. Chemical compatibility of silver electrodes and low-fired
samples has also been investigated. 相似文献
12.
V. T. Kavitha R. Jose S. Ramakrishna P. R. S. Wariar J. Koshy 《Bulletin of Materials Science》2011,34(4):661-665
Nanocrystalline Ba2NdSbO6, a complex cubic perovskite metal oxide, powders were synthesized by a self-sustained combustion method employing citric
acid. The product was characterized by X-ray diffraction, differential thermal analysis, thermogravimetric analysis, Fourier
transform infrared spectroscopy, transmission electron microscopy and scanning electron microscopy. The as-prepared powders
were single phase Ba2NdSbO6 and a mixture of polycrystalline spheroidal particles and single crystalline nanorods. The Ba2NdSbO6 sample sintered at 1500°C for 4 h has high density (∼ 95% of theoretical density). Sintered nanocrystalline Ba2NdSbO6 had a dielectric constant of ∼ 21; and dielectric loss = 8 × 10−3 at 5 MHz. 相似文献
13.
Pure and Zr-substituted CaCu3(Ti1−x
Zr
x
)4O12 (x = 0, 0.01, 0.02, 0.03) ceramics were prepared by the Pechini method. X-ray powder diffraction analysis indicated the formation
of single-phase compound, and all the diffraction peaks were completely indexed by the body-centered cubic perovskite-related
structure. The effects of Zr4+ ion substituting partially Ti4+ ion on the dielectric properties were investigated in frequency range between 100 Hz and 1 GHz. The low frequency (f ≤ 105 Hz) dielectric constant decreases with Zr substitution and the high frequency (f ≥ 107 Hz) dielectric constant is unchanged. Interestingly, a low-frequency relaxation was observed at room temperature through
Zr substitution. The observed dielectric properties in Zr-substituted samples were discussed using the internal barrier layer
capacitor model. A corresponding equivalent circuit was adopted to explain the dielectric dispersion. The characteristic frequency
of low-frequency relaxation rises due to the decrease of the resistivity of grain boundary with Zr substitution, which is
likely responsible for the large low-frequency response at room temperature. 相似文献
14.
Shuang Wang Hao Su Liying Chen Haiyi Yuan 《Journal of Materials Science: Materials in Electronics》2010,21(11):1159-1163
The high dielectric constant X8R dielectric materials could be sintered at 1,240 °C by doping 2.5 mol% Pb(Ti,Sn)O3 additives into the BaTiO3 ceramics, with a dielectric constant greater than 3,400 at 25 °C, dielectric loss lower than 2.0% and temperature coefficient
of capacitance (TCC) less than ±15% from −55 to 150 °C, which satisfied X8R specification. The effects of Pb(Ti,Sn)O3 on the microstructure and dielectric properties of BaTiO3-based ceramics were investigated. Doped with Pb(Ti,Sn)O3 additives, the partial solid solution was formed between Pb(Ti,Sn)O3 and BaTiO3. Due to the high Curie point of Pb(Ti,Sn)O3, the Curie point of the ceramics was markedly shifted to higher temperature about 150 °C, and the temperature coefficient
of capacitance curves was flattened. The increase of the tetragonality (c/a ratio) and the fine microstructure were resulted
in the increase of dielectric constant. With Pb(Ti, Sn)O3 content up to 3 mol%, the depression of Ti4+’s polarization and the decrease of the tetragonality (c/a ratio) were resulted in the decrease of dielectric constant. 相似文献
15.
Ying Wang Lei Ni Xiang Ming Chen 《Journal of Materials Science: Materials in Electronics》2011,22(4):345-350
Ca1−3x/2Nd
x
Cu3Ti4O12 (x = 0, 0.1, 0.2) ceramics were prepared by a solid state reaction process, and single-phased structures were obtained for all
the compositions. The dielectric characteristics of pure and Nd-substituted CaCu3Ti4O12 ceramics were investigated together with the microstructures. The mixed-valent structures of Cu+/Cu2+ and Ti3+/Ti4+ in the present ceramics were confirmed by X-ray photoelectron analysis. The dielectric relaxation in the low temperature
range was examined in detail and the variation of dielectric constant and dielectric loss was attributed to the modification
mixed-valent structures. 相似文献
16.
X. H. Zheng X. M. Chen T. Wang 《Journal of Materials Science: Materials in Electronics》2005,16(9):623-627
The effects of La/Sn co-substitution at A and B sites of Ba4Nd2Ti4Ta6O30 ceramics were investigated. With La/Sn co-substitution, the temperature coefficient was significantly improved to near zero, at the same time, dielectric constant reduced and dielectric loss increased. In particular, remarkable annealing effects on dielectric properties were observed for these modified ceramics. After annealing, dielectric constant considerably increased, and temperature coefficient shifted to more negative. 相似文献
17.
P. S. Sahoo A. Panigrahi S. K. Patri R. N. P. Choudhary 《Journal of Materials Science: Materials in Electronics》2010,21(2):160-167
Polycrystalline sample of Ba5SmTi3V7O30 was prepared by a high-temperature solid-state reaction technique. Structural and microstructural characterizations were
performed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray preliminary structural studies reveal that
the material has orthorhombic structure at room temperature. Detailed electrical (dielectric and impedance) properties of
the material studied by using a complex impedance spectroscopy (CIS) technique in a wide temperature range (33–450 °C) at
different frequencies (102–106 Hz) reveal that the relative dielectric constant of the material increases with rise in temperature and thus bulk has a major
contribution to its dielectric and electrical properties. The bulk resistance of the material decreases with rise in temperature
exhibiting a typical negative temperature coefficient of resistance (NTCR) behavior. The nature of the temperature variation
of conductivity and value of activation energy, suggest that the conduction process is of mixed-type (ionic–polaronic and
space charge). The existence of ferroelectricity in the compound was confirmed from polarization study. 相似文献
18.
Guo-Hua Chen 《Journal of Materials Science》2007,42(17):7239-7244
The effects of replacement of MgO by CaO on the sintering and crystallization behavior of MgO–Al2O3–SiO2 system glass-ceramics were investigated. The results show that with increasing CaO content, the glass transition temperature
firstly increased and then decreased, the melting temperature was lowered and the crystallization temperature of the glass-ceramics
shifted clearly towards higher temperatures. With the replacement of MgO by less than 3 wt.% CaO, the predominant crystalline
phase in the glass-ceramics fired at 900 °C was found to be α-cordierite and the secondary crystalline phase to be μ-cordierite.
When the replacement was increased to 10 wt.%, the predominant crystalline phase was found to be anorthite and the secondary
phase to be α-cordierite. Both thermal expansion coefficient (TCE) and dielectric constant of samples increases with the replacement
of MgO by CaO. The dielectric loss of sample with 5 wt.% CaO fired at 900 °C has the lowest value of 0.08%. Only the sample
containing 5 wt.% and10 wt.% CaO (abbreviated as sample C5 and C10) can be fully sintered before 900 °C. Therefore, a dense
and low dielectric loss glass-ceramic with predominant crystal phase of α-cordierite and some amount of anorthite was achieved
by using fine glass powders (D50 = 3 μm) fired at 875–900 °C. The as-sintered density approaches 98% theoretical density. The flexural strength of sample
C5 firstly increases and then decreases with sintering temperature, which closely corresponds to its relative density. The
TCE of sample C5 increases with increasing temperature. The dielectric property of sample C5 sintered at different temperatures
depends on not only its relative density but also its crystalline phases. The dense and crystallized glass-ceramic C5 exhibits
a low sintering temperature (≤900 °C), a fairly low dielectric constant (5.2–5.3), a low dielectric loss (≤10−3) at 1 MHz, a low TCE (4.0–4.25 × 10−6 K−1), very close to that of Si (∼3.5 × 10−6 K−1), and a higher flexural strength (≥134 MPa), suggesting that it would be a promising material in the electronic packaging
field. 相似文献
19.
Oxides of the type, Ba3-xSrxZnNb2O9 (0 ≤x ≤3), were synthesized by the solid state route. Oxides calcined at 1000°C show single cubic phase for all the compositions.
The cubic lattice parameter (a) decreases with increase in Sr concentration from 4.0938(2) forx = 0 to 4.0067(2) forx = 3. Scanning electron micrographs show maximum grain size for thex = 1 composition (∼ 2 μm) at 1200°C. Disks sintered at 1200°C show dielectric constant variation between 28 and 40 (at 500
kHz) for different values of x with the maximum dielectric constant atx = 1. 相似文献
20.
Dongyun Guo Takashi Goto Chuanbin Wang Qiang Shen Lianmeng Zhang 《Journal of Materials Science: Materials in Electronics》2012,23(4):897-900
BaTi4O9 film was prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition. The microstructure and dielectric properties were investigated. The single-phase
BaTi4O9 film with random orientation was obtained. The surface consisted of round and rectangular grains, and the cross-section was
columnar microstructure. The deposition rate (R
dep) was 135 μm h−1. The dielectric constant (ε
r) and loss (tanδ) were 35 and 0.01, respectively, at 1 MHz. With increasing temperature, ε
r increased and showed a broad peak around 736 K, which indicated there might be a phase transition. 相似文献