在线低压等离子清洗研究

介绍了一种高效环保的在线等离子清洗方法,深入研究了低压下等离子的清洗原理和在线式的清洗机制,提出了介质气体的选配原则,分析了榆测表面自由能和洁净程度的接触角测试方法.通过实验,在氩等离子在线清洗中,用接触角测试仪测定固体表面清洗前后粘附功的变化,发现在氩等离子清洗后固体表面粘附功提高了54.7%,相对于普通的射频等离子...     

等离子清洗技术对芳纶纤维复合材料的研究

在某机型的实际生产中处理芳纶纤维时使用了脱模剂。无法有效的清除残留在芳纶纤维上的脱模剂，导致涂装质量不达标。本文分析了等离子清洗对芳纶纤维表面的影响。对等离子清洗后的芳纶纤维进行达因测试和接触角测试，得出了最佳清洗频率、功率和清洗时间等参数。等离子清洗工艺可以有效的去除芳纶纤维表面残留的脱模剂并提高表面活性，增强涂层与基体之间的附着性能，确保了芳纶纤维表面涂装的可靠性。     

等离子清洗工艺对PBGA组装可靠性的影响

文章主要论述了PBGA组装的等离子清洗评定,包括抗界面剥离。研讨了通过射频和微波能量施加功率的两种不同的等离子体系。通过测量表面接触角获得最佳的等离子清洗工艺参数通过扫描电子显微镜、抗拉及剪切力试验来鉴定等离子清洗结果,试验样品为27 mm×27mm的292个焊球的PBGA。陈述了密封剥离试验、芯片和密封剂拉力试验、焊线拉力试验和C-模式SAM(C-SAM)检查的结果,证明了最佳的等离子清洗工艺会增强PBGA封装的定性等级,并提高工艺效率和生产率。     

定向离子清洗对基片表面性质的影响

为提高高功率激光薄膜的抗激光损伤能力，研究了定向离子清洗对玻璃基片表面性质的影响。用End-Hall型离子源在不同清洗参数下对K9玻璃基片进行了清洗，用光学显微镜验证了基片的二次污染和离子的清洗效果，用静滴接触角仪测量了基片在离子清洗前后对水滴的接触角，用原子力显微镜和轮廓仪分别观测了不同参数的离子清洗前后的基片表面形貌和粗糙度，分析了基片清洗后表面性质如清洁、表面能、接触角、表面粗糙度、表面形貌的变化机理。研究表明定向离子清洗可有效去除二次污染、增加基片表面能、控制基片表面粗糙度和表面形貌，是一种有效改善基片表面性质的处理方法。     

在线等离子清洗设备控制系统设计

作为一种精密干法清洗设备,等离子清洗机可以有效去除IC封装工艺过程中的污染物,改善材料表面性能,增加材料表面能量。与传统独立式的等离子清洗设备相比,在线式等离子清洗设备具有自动化程度高、清洗效率高、设备洁净度高、适应范围广等优点,适用于大规模全自动化生产。     

表面活性剂复配对蓝宝石CMP后清洗效果的影响

为了去除蓝宝石化学机械抛光(CMP)后表面残留的抛光液,采用表面活性剂复配清洗法,选用非离子表面活性剂脂肪醇聚氧乙烯醚9 (AEO9)和阴离子表面活性剂脂肪醇聚氧乙烯醚硫酸钠(AES)按不同质量比复配,并与酸碱清洗法进行了对比。对CMP后的蓝宝石进行超声辅助清洗实验,分析了不同复配比对于蓝宝石晶片清洗后表面接触角、表面形貌以及颗粒去除率的影响。结果表明:表面活性剂复配清洗法的清洗效果优于传统的酸碱清洗法,最优配比的表面活性剂复配清洗法的颗粒去除率较酸碱清洗法提升了31.17%;当表面活性剂复配清洗法中AEO9与AES复配比为1∶1时,清洗后的蓝宝石表面接触角最小,为21.6°,表面形貌最优,颗粒去除率达到99.65%,清洗效果最好。     

小型等离子清洗蛐刻蚀机的应用

综述了等离子体产生的原理,小型等离子清洗蛐刻蚀机的特点,在各加工行业的应用,特别是在科研机构发挥了举足轻重的作用,包括等离子清洗、刻蚀、等离子镀、等离子涂覆、等离子灰化和表面改性等。论述了小型等离子清洗蛐刻蚀机在TEM、SEM、电镜等方面的特殊应用。并讨论了等离子处理对于产品的可靠性和过程效率的提高是目前最理想的技术及其优势。     

小型等离子清洗/刻蚀机的应用

综述了等离子体产生的原理、小型等离子清洗/刻蚀机的特点以及在各加工行业的应用,特别是其在科学研究领域的独特功能:等离子清洗、刻蚀、等离子镀、等离子涂覆、等离子灰化和表面改性等;论述了小型等离子清洗/刻蚀机在TEM、SEM、电镜等方面的特殊应用,并讨论了等离子处理的特殊性及其在现代科学研究中的不可替代性。     

批量式等离子清洗机与在线式等离子清洗机的对比

等离子清洗机的主要原理是利用清洗时高能电子碰撞反应气体分子,使之离解或电离,利用产生的多种粒子轰击被清洗表面或与清洗表面发生化学反应,从而有效地清除各种污染物。针对此,主要使用ANSYS有限元分析软件对批量式等离子清洗机与在线式等离子清洗机反应仓的气流和电磁场进行了仿真分析。实验结果表明,在线式等离子清洗机具有清洗效果好,清洗后不会产生有害污染物、效率高、节省劳动力和安全可靠等优点,具有更广泛的市场前景。     

干冰微粒喷射法清洗ITO玻璃的研究

对干冰微粒喷射法和低频超声波法清洗ITO玻璃的效果进行了比较研究.用接触角测量仪、SEM和XPS测量了清洗前后ITO玻璃表面的浸润性、污染颗粒数量和元素成分及含量等洁净度指标.研究表明,与超声波法清洗相比,干冰微粒喷射法清洗可以使ITO玻璃表面的接触角更小,有机碳含量减少40.5%,污染颗粒数量也显著减少,是一种清洗ITO玻璃的有效方法.     

Contact angle evaluation for laser cleaning efficiency

A laser cleaning technique using an excimer laser is introduced to remove the photoresist on a Si wafer surface and its cleaning characteristics have been investigated. To analyse the cleaning efficiency quantitatively, a scanning electronic microscope, energy dispersive spectroscope, surface scanner and contact angle measurement were employed. Among these methods, it was confirmed experimentally that the contact angle measurement could be applicable to analyse the laser cleaning efficiency effectively owing to its speed of measurement and low measurement cost.     

Plasma cleaning of plastic ball grid array package

An investigation of O₂, Ar and Ar/H₂ plasma cleaning was carried out on plastic ball grid array (PBGA) substrates to study its effects on surface cleanliness, wire bondability and molding compound/solder mask adhesion. Optimization of the plasma cleaning process parameters was achieved using the contact angle method and verified by auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and wedge pull tests. It was found that both the wedge bond quality and moisture sensitivity of a 225 I/O PBGA package were improved after plasma cleaning. Furthermore, atomic force microscopy (AFM) characterization and XPS analysis revealed that the solder mask has undergone plasma-induced surface modification. Cross-contamination of Au and F traces on the solder mask that has occurred during plasma cleaning was identified by XPS. This study has demonstrated the benefits and consequences of plasma cleaning for a PBGA package.     

How to evaluate surface free energies of dense and ultra low-κ dielectrics in pattern structures

A method to evaluate the surface free energy in pattern structure, of chemical vapor deposited dense and ultra low-κ (ULK) SiOCH dielectric films, is presented. Therefore dense and ultra low-κ films were treated by different post ash plasma processes. This films were characterized using Auger electron spectroscopy, atomic force microscopy and contact angle measurements. For both material systems a correlation between the amount of surface near carbon and the surface free energy was found, independent on the plasma chemistry used. The range of the surface roughness is very small and does not have a strong impact on the surface free energy. The correlation model can be applied for pattern structures. After measuring the carbon concentration at the side walls by methods like TEM-EELS or other the model provides the polar and dispersive part of the surface free energy. Having the surface free energy, contact angle of different liquids on or in pattern structures can be calculated. Hence, the wetting behavior and the probability of pattern collapse can be predicted, which is essential to select an appropriate chemical for cleaning and other wet chemical based processes.     

Effect of the plasma cleaning process on plastic ball grid array package assembly reliability

Interface delamination is recognized as one of the major failures of microelectronics packaging. It can result from various factors, including stresses from mismatch of adherent materials, hygrothermal stress from the release of vapor pressure of moisture during soldering reflow process, and interface material adhesion strength. The failure mechanisms are associated with cyclic loads, temperature and moisture condition as well as interface adhesion strength degradation. This paper focuses on the evaluation of plasma cleaning on PBGA assembly, including resistance to interface delamination. Two different plasma systems, powered by radio frequency (RF) and microwave (MW) energy, are studied. The optimized plasma cleaning process parameters are obtained by surface contact angle measurements. The plasma cleaning results are also verified by scanning electron microscopy (SEM) as well as physical pull and shear tests. The test vehicles are 27/spl times/27 mm 292-ball PBGAs. The results from encapsulation peel tests, die and encapsulant pull tests, bonding wire pull tests and C-Mode SAM (C-SAM) examination are presented. It is clear that an optimal plasma cleaning process can be achieved with different plasma systems. The experimental results also demonstrate that plasma cleaning has little effect on wire bonding process and die attach pull strength for given substrates and assembly materials. In all the cases, optimal plasma cleaning steps improve PBGA resistance against interface delaminations for cases where plasma cleaning is carried out before encapsulation process. Moreover, different plasma cleaning techniques would affect the assembly productivity, investment and yield. This paper demonstrates that the optimized plasma cleaning process would enhance PBGA package qualification level and improve the process yields and productivity.     

等离子体清洁印制插头表面的研究

印制电路板印制插头是PCB中用于电气连接的插脚,起着电气导通的重要作用。由于正常的金表面应当是光亮金黄,但在生产过程中印制插头表面会发生变色,俗称金面氧化,影响电气导通,严重时会导致电子系统工作的失败。然而传统的清洁方法对印制插头表面的作用效果不明显,因此清洁印制插头表面是困扰PCB工艺过程的难题。本文对印制插头表面变色的原因进行分析,提出一种清洁印制插头表面的新型方法,即等离子清洁法,然后采用正交试验法确定清洁的最佳参数范围,并经实践检验取得良好效果。     

A Study of Plasma-Cleaned Ag-Plated Cu Leadframe Surfaces

In this study, an Ar plasma was employed to remove the antitarnish layer on Ag-plated Cu leadframe surfaces using various process powers and times. Measurements of the contact angle, field-emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight secondary-ion mass spectrometry were employed to characterize both the Ag and Cu surfaces before and after plasma cleaning. The antitarnish layer on the leadframe surfaces was determined to be benzotriazole and/or its derivatives. Low-power and short-duration plasma treatments did not significantly change the Ag and Cu surfaces in terms of their surface morphologies, and such treatments were not able to totally remove the antitarnish layer. In contrast, a high-power and long-duration plasma treatment made the surfaces slightly smoother and was able to remove the antitarnish layer on both Ag and Cu surfaces. However, cross-contaminations were also detected between the Ag and Cu surfaces during the plasma cleaning process. This cross-contamination is due to redeposition of Ag and Cu atoms during the plasma treatment.     

一种对铜抛光后去除苯并三氮唑的新型清洗剂的研究

在化学机械平坦化(CMP)后,铜表面会残留一些颗粒污染(如二氧化硅)和有机物(如苯并三氮唑),这些杂质都会对集成电路造成很大的危害,因此CMP后清洗是必比不可少的过程。尤其是苯并三唑(BTA),它会和铜在其表面生成一层致密的Cu-BTA膜,使铜的表面疏水。这就要求有一种可以有效去除铜表面BTA的清洗剂。本次研究中提出的新型复合清洗剂主要来解决两个问题：一个是BTA的去除问题,另一个是清洗液对铜表面腐蚀的问题。清洗剂的主要成分有两种,一种是FA / OⅡ型碱性螯合剂,它主要用来去除BTA,另一种是FA / O I型表面活性剂,它主要用来解决铜表面的腐蚀问题。通过接触角和电化学的手段来表征BTA的去除情况。表面活性剂的抗腐蚀能力主要通过电化学实验来反映。本文提出的复合清洗剂在不腐蚀铜表面的前提下对于BTA的去除很有优势。关键词： 去除苯并三氮唑;碱性螯合剂;表面活性剂; 腐蚀抑制剂