共查询到18条相似文献,搜索用时 93 毫秒
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与现有的金刚石膜势光工艺相匹配的高效刻蚀技术,是目前研究的热点,自行研制的稀土化合物浆料对CVD金刚石厚膜进行了刻蚀研究,刻蚀过程在低于金刚石氧化点的温度下和大气环境中完成,其刻蚀结果,用扫描电子显微镜给出。实验表明,该工艺采用廉价的稀土化合物为原料,具有简单、完全、高效的特点。 相似文献
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CVD金刚石膜高效超精密抛光技术 总被引:1,自引:0,他引:1
CVD金刚石膜作为光学透射窗口和新一代计算机芯片的材料,其表面必须得到高质量抛光,但是现存方法难以满足既高效又超精密的加工要求.本文提出机械抛光与化学机械抛光相结合的方法.首先,采用固结金刚石磨料抛光盘和游离金刚石磨料两种机械抛光方法对CVD金刚石膜进行粗加工,然后采用化学机械抛光的方法对CVD金刚石膜进行精加工.结果表明,采用游离磨料抛光时材料去除率远比固结磨料高,表面粗糙度最低达到42.2 nm.化学机械抛光方法在CVD金刚石膜的超精密抛光中表现出较大的优势,CVD金刚石膜的表面粗糙度为4.551 nm. 相似文献
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利用三点弯曲测量CVD金刚石膜的断裂强度的方法 ,研究试样尺寸、抛光及加载方式对金刚石膜的断裂强度的影响。试样尺寸在一定范围内 ,试样大小、抛光与否对金刚石膜的断裂强度的影响不大 ;而 10mm× 2mm的试样对测量金刚石膜断裂强度具有意义。加载方式对金刚石膜的断裂强度影响较大 ,当金刚石膜形核面处于张应力时得到的断裂强度值要高于生长面处于张应力时得到的值 ,棱边加载方式得到断裂强度值处于两者之间 ,更具有代表性。 相似文献
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本文对CVD金刚石厚膜刀具材料的制备技术及后加工工艺,VCD金刚石厚膜刀具材料的研究现状和发展前景进行了简要的综述。 相似文献
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H. B. Chae K. H. Park D. J. Seong J. C. Kim Y. J. Baik 《International Journal of Thermophysics》1996,17(3):695-703
Diamond films 60 and 170 µm in thickness were grown by PACVD (plasma-assisted chemical vapor deposition) under similar conditions. The thermal diffusivity of these freestanding films was measured between 100 and 300 K using AC calorimetry. Radiation heat loss from the surface was estimated by analyzing both the amplitude and the phase shift of a lock-in amplifier signal. Thermal conductivity was calculated using the specific heat data of natural diamond. At room temperature, the thermal conductivity of the 60 and 170 m films is 9 and 16 W-cm–1. K–1 respectively, which is 40–70% that of natural diamond, The temperature dependence of thermal conductivity of the CVD diamond films is similar to that of natural diamond, Phonon scattering processes are considered using the Debye model, The microsize of the grain boundary has a significant effect on the mean free path of phonons at low temperatures. The grain in CVD diamond film is grown as a columnar structure, Thus, the thicker film has the larger mean grain size and the higher thermal conductivity. Scanning electron microscopy (SEM) and Raman spectroscopy were used to study the microstructure of the CVD diamond films. In this experiment, we evaluated the quality of CVD diamond film of the whole sample by measuring the thermal conductivity.Paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994, Boulder, Colorado, U.S.A. 相似文献
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CVD金刚石膜的场发射机制 总被引:1,自引:0,他引:1
利用热灯丝化学气相沉积方法在光滑的钼上沉积了金刚石膜,用扫描电子显微镜和Raman谱对金刚石膜进行了分析。结果表明金刚石膜是由许多金刚石晶粒组成,晶粒间界主要是石墨相,并且在膜内有许多缺陷。金刚石膜的场发射结果表明高浓度CH4形成的金刚石膜场发射阈位电场较低浓度CH4形成的金刚石为低。这意味着杂质(如石墨)和缺陷(悬挂键)极大地影响了膜的场发射性能。根据以上结果,提出了一种CVD金刚石膜的场发射机制即膜内的缺陷增强膜内的电场,石墨增大电子的隧穿系数以增强CVD金刚石膜的场发射。 相似文献
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研究了一种用于抛光等离子体溅射CVD法制备的金刚石自支撑膜的高效安全的抛光工艺.试验探索了转盘转速、金刚石粉颗粒尺寸、磨盘表面形状对金刚石自支撑膜磨抛速率的影响.研究表明:带槽盘对金刚石自支撑膜的粗研磨效果明显,速率较高,平面盘对提高金刚石自支撑膜的表面粗糙度有利;不同颗粒的金刚石粉对应着各自合适的能充分利用其磨削能力的转速,在这个转速下,金刚石自支撑膜的磨抛速率在12μm/h左右.本文通过对新的工艺参数的探索,为金刚石自支撑膜后续加工提供有力的技术支持. 相似文献
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Jessica M. Werrell Soumen Mandal Evan L. H. Thomas Emmanuel B. Brousseau Ryan Lewis Paola Borri 《Science and Technology of Advanced Materials》2013,14(1):654-663
Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films’ various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones. 相似文献
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报道了化学气相沉积金刚石薄膜生长的原位反射率测量,提出了监控金刚石薄膜生长的激光反射多光束干涉的数学模型。通过原位反射率的测量,精确监控了金刚石薄膜的生长厚度,成功地制备了红外增透增,这种方法的测量装置简单、紧凑而且可靠。 相似文献
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本文研究了直流等离子体CVD金刚石膜在常温和液氮温度下的阴极发光光谱,探讨了阴极发光谱中各峰的起因,并分析了光谱随测量温度和沉积条件的变化情况,讨论了造成这种变化的原因。研究表明,金刚石膜中缺陷和杂质以及金刚石膜的晶体结构对它的阴极发光光谱有重要的影响。 相似文献
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Investigation into polishing process of CVD diamond films 总被引:1,自引:0,他引:1
A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed. 相似文献
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器件级同质外延CVD金刚石膜上的具有高击穿电压的铝肖特基二极管 总被引:1,自引:1,他引:0
用微波等离子体化学气相沉积方法合成高品质同质外延金刚石膜,并且用扫描电镜和阴极荧光分析法评价。为了得到高薄膜生长速率,把甲烷浓度设定在4%。薄膜上的生长丘的数量和大小依赖于生长条件。在本工作的样品中,未发现任何非外延晶粒。室温下的阴极荧光分光结果表明这种金刚石薄膜具有与自由励起子相关的谱峰。氢终端的膜表面制作的铝电极显示了P型整流特性。击穿电压高于380V。实验结果表明,阴极荧光分析法观测到的缺陷和电性能密切相关,并且可以在有室温边发射的金刚石表面上制作具有高击穿电压的整流电极。 相似文献