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ZnS:Li_2O 薄膜的电致发光特性 总被引:1,自引:1,他引:0
本文报道了新型较高亮度的 Zn S:L i2 O蓝色薄膜电致发光 ;烧结了新型的蓝色发光材料 Zn S:L i2 O,用电子束蒸发制备出 Si O2 夹层结构的 Zn S:L i2 O蓝色电致发光器件 ;通过吸收光谱、电致发光光谱、激发电压与发光强度的关系等研究了 Zn S:L i2 O薄膜发光特性。认为 Zn S:L i2 O薄膜电致发光可能是由 Zn填隙和氧替硫引起的 ,氧替位能抑制通过硫空位产生的无辐射跃迁使蓝色发光增强 相似文献
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作为多色薄膜电致发光器件的有源层,人们对稀土掺杂碱土硫化物进行了深入的研究.特别是 CaS:Eu 和 SrS:Ce,它们分别是红和蓝色 EL 器件的最佳材料。为了得到多色 TFEL 器件,人们对制备条件等问题,例如衬底温度、沉积速率和硫共蒸发等进行了研究。但器件的电致发光亮度仍不适应于 相似文献
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本文提出了在5kHz频率下发光亮度为150cd/m~2的白色薄膜电致发光(TFEL)器件。研究出了SrS:Pr,K;SrS:Ce,K,EU和又SrS:Ce,K/SrS:Eu三种荧光粉。对这三种荧光粉的电致发光特性进行了比较。用白色电致发光器件和彩色滤光片可获得全色薄膜电致发光器件。 相似文献
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本文介绍了根据加速电子,激发中心在空间上分开,利用低场预热和高场加速的设想,设计并研制的一种新型交流薄膜电致发光器件。 相似文献
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有机薄膜电致发光器件的热效应及器件失效过程研究 总被引:1,自引:0,他引:1
制备器件的同时也在铟锡氧化物 (ITO)和各层有机薄膜上覆盖一层不透气的薄膜 ,然后快速退火 ,发现了导致有机薄膜电致发光器件的热效应及器件失效的可能因素 ,从而提出了一种与有机薄膜电致发光器件制备工艺完全兼容的工艺检测方法———覆盖加热对比法 相似文献
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一、引言信息科学的发展和计算机技术的广泛应用促进了信息显示技术的进步,发光二极管、液晶,等离子体,电致发光等新型显示器件的出现打破了阴极射线管在显示领域里的统治地位。近年来电致发光薄膜器件的研究非常活跃,并获得了可喜的进展,ZnS:Mn交流驱动的薄膜电致发光器件(ACEL 相似文献
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用电子束研制不同介质膜作绝缘层的掺铒硫化锌交流电致发光薄膜器件,用X射线衍射技术测量薄膜表面结构,发现薄膜多晶的沉积有择优取向的趋势。观察不同绝缘层交流电致发光器件的初始稳定过程,讨论绝缘层质量对交流电致发光器件的影响。 相似文献
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在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了影响聚合物掺杂小分子薄膜器件发光性能的因素.实验表明,通过在器件中掺杂,可以控制器件所发光的颜色.研究了PTPD掺杂Rubrene分子薄膜的电致发光光谱和光致发光光谱.由实验可知.在光致发光中存在从PTPD向Rubrene的能量传递和电荷转移,而电致发光则存在从PTPD向Rubrene的能量传递和Rubrene分子对载流子的俘获.即掺杂器件的发射机制为载流子陷阱和Forster能量转换过程的共同作用. 相似文献
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通过计算多层薄膜结构的特征矩阵,应用微波网络的思想导出了金属背景多层薄膜结构反射系数的计算方法,并举例验证了该计算方法的正确性,为金属背景多层薄膜结构电磁散射的近似计算提供了理论基础. 相似文献
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R. Caballero C. A. Kaufmann V. Efimova T. Rissom V. Hoffmann H. W. Schock 《Progress in Photovoltaics: Research and Applications》2013,21(1):30-46
In order to transfer the potential for the high efficiencies seen for Cu(In,Ga)Se2 (CIGSe) thin films from co‐evaporation processes to cheaper large‐scale deposition techniques, a more intricate understanding of the CIGSe growth process for high‐quality material is required. Hence, the growth mechanism for chalcopyrite‐type thin films when varying the Cu content during a multi‐stage deposition process is studied. Break‐off experiments help to understand the intermediate growth stages of the thin‐film formation. The film structure and morphology are studied by X‐ray diffraction and scanning electron microscopy. The different phases at the film surface are identified by Raman spectroscopy. Depth‐resolved compositional analysis is carried out via glow discharge optical emission spectrometry. The experimental results imply an affinity of Na for material phases with a Cu‐poor composition, affirming a possible interaction of sodium with Cu vacancies mainly via In(Ga)Cu antisite defects. An efficiency of 12.7% for vacancy compound‐based devices is obtained. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
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采用能量密度为1.178×109W/cm2的XeCl准分子激光直接辐照高纯度的石墨靶,并同时采用辅助放电,在1×10-5Torr的真空环境中,于温度为80℃的Si(100)的基片上淀积出类金刚石薄膜,Raman光谱显示在1330cm-1处出现较强的散射峰值;对薄膜红外光谱进行测试,其光谱在2900cm-1处有吸收峰,表明所淀积的类金刚石薄膜含有C-H键,其H元素与C元素的比为45%.薄膜的电阻率为1.89×106Ω/cm,通过光吸收测得的该薄膜的能隙为1.55eV. 相似文献
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A reduced high-resistance state (HRS) current assists in obtaining high ON/OFF ratio and is beneficial to operation flexibility. This study proposes that less difference in the atomic radius of alkaline earth oxide-based memory devices is beneficial to reduce the HRS current. Forming-free resistive-switching behavior in the alkaline earth oxide-based memory device using magnesium titanate (MTO), strontium titanate (STO), and barium titanate (BTO) thin films is fabricated by sol-gel method. The dependence of HRS current on the difference in atomic radius was predicted by the Hume–Rothery rule and confirmed experimentally. The hydrolyzed particles, surface roughness, and density of oxygen vacancy were decreased when the difference in atomic radius between the Ti element and alkaline earth metal was less. Compared with the BTO thin film, the MTO thin film has fewer particles, smoother surface, and less density of oxygen vacancy, resulting in lower HRS current. Thus, suitable element selection for the alkaline earth oxide-based memory devices can reduce the HRS current. 相似文献
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Shye Lin Wu De Ming Chiao Chung Len Lee Tan Fu Lei 《Electron Devices, IEEE Transactions on》1996,43(2):287-294
In this paper, the characteristics of thin textured tunnel oxide prepared by thermal oxidation of thin polysilicon film on Si substrate (TOPS) are studied. Because of the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon film into the Si substrate and the enhanced oxidation rate at the grain boundaries, the oxidation rate of the TOPS sample is close to that of a normal oxide grown on a (111) Si substrate. Also, a textured Si/SiO2 interface is obtained. The textured Si/SiO2 interface results in localized high fields and causes a much higher electron injection rate. The optimum TOPS sample can be obtained by properly oxidizing the stacked α-Si film, independent of the substrate doping level. Also, the optimum TOPS sample exhibits a smaller electron trapping rate and a lower interface state generation rate when compared to the sample from a standard tunnel oxide process. These differences are attributed to a lower bulk electric field and a smaller injection area in the TOPS samples 相似文献
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Cu(In,Ga)Se2 (CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM). The orientation of CIGS thin films is identified by X-ray dif- fraction (XRD) and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two prepara- tion processes, we consider the cause of such differences is that the films deposited by three-stage process at low tem- perature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low tempera- ture results in the CIGS thin films with the (220)/(204) preferred orientation, and the ordered vacancy compound (OVC) layer is formed on the surface of the film. This study has great significance to large-scale industrial production. 相似文献
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A textured tunnel oxide, TOPS, prepared by thermally oxidizing a thin polysilicon film on a Si substrate is reported. Due to the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon into Si substrate and the enhanced oxidation rate at the grain boundaries, a textured Si-SiO2 interface is obtained. The textured interface results in localized high fields and enhances electron injection into TOPS. TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and interface state generation under high-field operation, and a higher asymmetric injection polarity than the normal oxide 相似文献
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Bensaoula A. Malki H.A. Kwari A.M. 《Semiconductor Manufacturing, IEEE Transactions on》1998,11(3):421-431
This paper demonstrates the incorporation of a multilayer neural network in semiconductor thin film deposition processes. As a first step toward neural network-based process control, we present results from neural network pattern classification and beam analysis of reflection high energy electron diffraction RHEED images of GaAs/AlGaAs crystal surfaces during molecular beam epitaxy growth. For beam analysis, we used the neural network to detect and measure the intensity of the RHEED beam spots during the growth process and, through Fourier transformation, determined the thin film deposition rate. The neural network RHEED pattern classification and intensity analysis capability allows, powerful in situ real time monitoring of epitaxial thin film deposition processes. Our results show that a three layer network with sixteen hidden neurons and three output neurons had the highest correct classification rate with a success rate of 100% during testing and training on 13 examples 相似文献