电子工程设计的EDA技术研究分析

近些年来,随着信息技术不断发展,电子技术也随着发展。电子产品更新频率不断加快,实现了电子产品的高集成、大容量和小体积开发。EDA技术的发展,创新了电子工程设计行业,为电子工程设计发展明确了新方向。21世纪将是EDA技术的高速发展期,EDA技术将是对21世纪产生重大影响的十大技术之一。文章主要阐述EDA技术的发展概念、发展过程,明确了EDA技术特点,分析该技术的作用。     

EDA技术在通信电子线路中的应用

EDA技术在我国通信电子线路中具有非常重要的应用。EDA技术不仅促进了通信技术的创新和发展,还改变了我国电子产品设计行业的发展方向。目前,EDA技术已经被广泛应用在通信电子线路中。所以本文先介绍了EDA技术,然后详细阐述了EDA技术在通信电子线路中的具体应用。     

EDA的发展及其应用

信息产业是21世纪的战略性产业,而EDA技术在其中起着举足轻重的作用。EDA技术的高速发展为各国带来了机遇和挑战。本文较详细地阐述了EDA技术的发展、基本设计方法、高层次的设计和应用,介绍了高速PCB和板级系统仿真技术以及EDA技术在我所的应用情况。     

现代EDA技术及其发展展望

信息产业是21世纪的战略性产业,而EDA技术在其中起着举足轻重的作用。在阐述了EDA技术的含义及特点,介绍了EDA技术的主要内容及设计流程,对EDA技术今后的应用和发展进行了预测和展望。     

基于EDA技术的电子设计

数字化是电子设计发展的必然趋势,EDA技术综合了计算机技术、集成电路等在不断向前发展,给电子设计领域带来了一种全新的理念。本文笔者首先简单对EDA技术的概念做了一个介绍,接着详细阐述了EDA技术的几种典型特点,讨论了EDA技术在电子设计中的应用及一般流程,最后从细谨态度出发,根据经验,提出了几点注意事项。     

EDA技术数字电子技术的应用

随着电子技术的不断发展,数字电子试验的发展趋势使得EDA技术引入成为必要,也是数字电子技术实验的重要环节,传统的数字电子技术实验不再满足时代发展的需要。本文通过对EDA技术和数字电子技术的概述,分析了在数字电子实验中EDA技术应用的必要性,并对EDA技术的设计流程进行了详细的介绍。旨在为EDA技术数字电子技术的试验提供参考依据。     

EDA技术在通信电子线路中的应用

人类社会已经进入到了高度发达的信息化社会,信息化社会的发展离不开电子产品的进步。随着电子产品的激烈竞争,只有通过采用ASIC技术,并运用EDA手段,来自行设计、开发和制造电子产品,不断地对那些已经过时的电子产品进行更新,才能够在激烈的市场环境下赢得一席之地。EDA技术是从90年代初的CAD(计算机辅助设计)、CAM(计算机辅助制造)、CAT(计算机辅助测试)和CAE(计算机辅助工程)的概念发展而来的。EDA技术在通信电子线路中的应用也越来越广泛。本文首先对EDA技术的概念进行了介绍,接下来回顾了EDA技术的发展历程,重点分析了EDA技术在通信电子线路中的应用,并得到了相关的结论。     

EDA教学内容探讨与实验装置选型分析

综述了EDA技术发展状况和国内高等院校开展EDA技术教学的需求并介绍了几种EDA软件系统的功能与特性,给出了高校开展EDA技术教学在软件系统选择的建议,并对CPLD／FPGA硬件硬件实验装置提出了功能要求和选型参数。     

数字化电子实验中的EDA分析

知识经济时代,信息与技术成为了社会发展的主要推动力,电子技术的飞速发展使得原本的数字化电子实验教学暴露出许多问题,无法满足实际教学需求,在这种情况下,EDA技术开始被应用到数字化电子实验中,有助于提升实验教学的效果。本文从数字化电子技术和EDA技术的定义出发,对EDA技术的发展情况、设计流程以及实验框架进行了简单分析,并就数字化电子实验中EDA技术的具体应用进行了讨论。     

EDA技术在芯片设计中的发展与应用

EDA（Electronic Design Automatic）技术已成为电子系统设计和电子产品研制开发的有效工具。分析了EDA技术的发展过程、基本设计方法，并阐述了当今EDA工具在芯片设计过程中存在的问题，同时从硅虚拟原型（SVP）及可测试性技术（DFT）二个方面讨论了EDA技术应用的发展趋势。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.