Electric response as a function of applied voltage of Nb-doped Bi4Ti3O12 thin films

We have investigated the electrical properties of sol-gel deposited Nb-doped Bi₄Ti₃O₁₂ (NBIT) ferroelectric thin films. The obtained values of remanent polarization (2P_r) and coercive voltage (V_c) were 7 μC/cm² and 2.5 V of NBIT thin film, respectively. From complex dielectric spectra, we observed the dielectric response consisting of two regions for measuring frequency; the low frequency region may be due to diffusion charge transport caused by impurities, while the dielectric relaxation mechanism of high frequency region seems to be the modified Debye type. A model was proposed to account for the observed phenomena, which fits very well to the dielectric dispersion relation: . The occurrence of an anomaly in n, σ, τ, and ε_S − ε_∞ parameters near V_c indicates a coupling between the charge carriers and ferroelectricity.     

Formation and desorption of SiI2 molecules

The chemical etching of Si(100)−(2×1) in I₂ ambient is considered. The desorption activation energy of SiI₂ molecules is evaluated from experimental data. It is found that the desorption activation energy of SiI₂ molecules is equal to . This corresponds to a value of the mean lifetime of adsorbed molecules on the surface of at temperature .     

Electronic and magnetic properties of triple-layered ruthenate Sr4Ru3O10 single crystals grown by a floating-zone method

We have grown high-quality single crystals of the triple-layered perovskite ruthenate Sr₄Ru₃O₁₀ using a floating-zone (FZ) method and measured their electronic transport and magnetic properties. Our experiments results are consistent with those previously reported for Sr₄Ru₃O₁₀ flux crystals; the magnetic ground state of Sr₄Ru₃O₁₀ is poised between an itinerant metamagnetic and itinerant ferromagnetic state, and its electronic ground state is a Fermi liquid. In addition, we have investigated the effect of disorder on the metallic state of Sr₄Ru₃O₁₀. From resistivity measurements of various Sr₄Ru₃O₁₀ crystals with different levels of disorder, we found that disorder enhances both temperature-independent elastic scattering and also temperature-dependent inelastic scattering. The in-plane metamagnetic transition is also found to be sensitive to disorder. Disorder results in an increase in the metamagnetic transition field and different magnetic behavior above the transition. We discuss the implications of this interesting observation.     

Growth of La0.7Sr0.3MnO3 films on Si(0 0 1) using SrMnO3 template layer

Using RF magnetron sputtering, we have successfully grown (1 1 0) orientated La_0.7Sr_0.3MnO₃ (LSMO) films on Si(0 0 1) wafers using SrMnO₃ (SMO) as a template layer. The X-ray diffraction (XRD) patterns of the SMO/Si heterostructures indicate that SMO grows along the (1 1 0) orientation, the orientation relationship between the SMO thin film and the Si (0 0 1) substrate being given by (0 1 1)_SMO∣∣(0 0 1)_Si and [01]_SMO∣∣[0 1 0]_Si. From the XRD patterns of the LSMO/SMO/Si heterostructures, we find that with an increase of substrate temperature, the required thickness of SMO, which plays an effective role of tuning the preferential orientation of LSMO, will decrease at first and then increase. It is thought that this originates from the fact that the crystallization of SMO is not perfect at low temperatures whereas too high a temperature results in reaction and diffusion at the interface of the two layers.     

Growth and structure characterization of epitaxial Bi2Sr2Co2Oy thermoelectric thin films on LaAlO3 (001)

Epitaxial Bi₂Sr₂Co₂O_y thin films with excellent c-axis and ab-plane alignments have been grown on (001) LaAlO₃ substrates by chemical solution deposition using metal acetates as starting materials. Microstructure studies show that the resulting Bi₂Sr₂Co₂O_y films have a well-ordered layer structure with a flat and clear interface with the substrate. Scanning electron microscopy of the films reveals a step-terrace surface structure without any microcracks and pores. At room temperature, the epitaxial Bi₂Sr₂Co₂O_y films exhibit a resistivity of about 2 mΩ cm and a seebeck coefficient of about 115 μV/K comparable to those of single crystals.     

Synthesis of the intermetallic clathrate Na2Ba6Si46 by oxidation of Na2BaSi4 with HCl

A new preparation route to the intermetallic clathrate-I compound Na₂Ba₆Si₄₆ is introduced, which allows one to make large amounts of product with standard laboratory equipment. The precursor Na₂BaSi₄ is oxidized with gaseous HCl at 673 K to Na₂Ba₆Si₄₆, NaCl and BaCl₂. Full-profile refinement of the crystal structure from the X-ray powder diffraction data revealed a composition close to Na₂Ba₆Si₄₆ (Na_1.94(1)Ba_6.06(1)Si₄₆, space group , a=10.281(1) Å). Differential scanning calorimetry showed an exothermic effect at 874 K, indicating that Na₂Ba₆Si₄₆ is metastable. The product was additionally characterized by scanning electron microscopy. The electronic structure of Na₂Ba₆Si₄₆ was investigated by a first-principles, all-electron full-potential method, predicting metallic conductivity. Na₂Ba₆Si₄₆ obtained by oxidation with HCl shows Pauli paramagnetism; no bulk superconductivity was found down to 1.8 K in a magnetic field of 20 Oe.     

Preparation and photocatalytic activity of novel efficient photocatalyst Sr2Bi2O5

A novel visible-light-driven photocatalyst of Sr₂Bi₂O₅ is prepared by solid-state reaction at 780 °C. The optical band gap of Sr₂Bi₂O₅ is determined to be 2.87 eV by UV-Vis diffuse reflectance spectroscopy. Under both UV and visible-light irradiation, the photocatalytic activity for degrading methyl orange (MO) over Sr₂Bi₂O₅ is higher than those over BiVO₄, and SrBi₂O₄. The relationships between the photocatalytic properties of Sr₂Bi₂O₅, SrBi₂O₄, and BiVO₄ and their crystal structures are discussed. Among Sr₂Bi₂O₅, SrBi₂O₄, and BiVO₄, the higher photocatalytic activity of Sr₂Bi₂O₅ is ascribed to its higher level of distortion of the metal-oxygen polyhedra, and the lower packing factor degree.     

Flat epitaxial ferromagnetic CoFe2O4 films on buffered Si(001)

Ferromagnetic films of spinel CoFe₂O₄ have been grown epitaxially on Si(001) using CeO₂/YSZ double buffer layers. The heterostructures were built in a single process by pulsed laser deposition with real-time control by reflection high-energy electron diffraction. YSZ and CeO₂ grow cube-on-cube on Si(001) and CoFe₂O₄ grows with (111) out-of-plane orientation, presenting four in-plane crystal domains. The interface with the buffer layers is smooth and the CoFe₂O₄ surface is atomically flat, with roughness below 0.3 nm. The films are ferromagnetic with saturation magnetization around 300 emu/cm³. The properties signal that CoFe₂O₄ is a good candidate for monolithic devices based on ferromagnetic insulating spinels.     

Preparation and characterization of Sr4Al2O7:Eu, Eu phosphors

A new composition of red strontium aluminate phosphor (Sr₄Al₂O₇:Eu³⁺, Eu²⁺) is synthesized using a solid state reaction method in air and in a reducing atmosphere. The investigation of firing temperature indicates that a single phase of Sr₄Al₂O₇ is formed when the firing temperature is higher than 1300 °C and that a Sr₃Al₂O₆ phase is formed as the main peak below 1300 °C. The effects of firing temperature and doping concentration on luminescent properties are investigated. Sr₄Al₂O₇ phosphors exhibit the typical red luminescent properties of Eu³⁺ and Eu²⁺. A comparison photoluminescence study with Sr₃Al₂O₆ phosphor shows that Sr₄Al₂O₇ has higher emission intensity than Sr₃Al₂O₆ as a result of the higher optimum doping concentration of Sr₄Al₂O₇ phosphor.